KR860006133A - 집적회로 실리콘 다이 복합체 제조 방법 - Google Patents

집적회로 실리콘 다이 복합체 제조 방법

Info

Publication number
KR860006133A
KR860006133A KR1019850005982A KR850005982A KR860006133A KR 860006133 A KR860006133 A KR 860006133A KR 1019850005982 A KR1019850005982 A KR 1019850005982A KR 850005982 A KR850005982 A KR 850005982A KR 860006133 A KR860006133 A KR 860006133A
Authority
KR
South Korea
Prior art keywords
integrated circuit
silicon die
composite manufacturing
circuit silicon
die composite
Prior art date
Application number
KR1019850005982A
Other languages
English (en)
Other versions
KR930006528B1 (ko
Inventor
챨스 데이비스 개리
Original Assignee
마이크로시 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마이크로시 인코포레이티드 filed Critical 마이크로시 인코포레이티드
Publication of KR860006133A publication Critical patent/KR860006133A/ko
Application granted granted Critical
Publication of KR930006528B1 publication Critical patent/KR930006528B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1062—Prior to assembly
    • Y10T156/1075—Prior to assembly of plural laminae from single stock and assembling to each other or to additional lamina
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1062—Prior to assembly
    • Y10T156/1075—Prior to assembly of plural laminae from single stock and assembling to each other or to additional lamina
    • Y10T156/1077—Applying plural cut laminae to single face of additional lamina

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
KR1019850005982A 1985-01-17 1985-08-20 집적회로 실리콘 다이 복합체 제조 방법 KR930006528B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/692,088 US4624724A (en) 1985-01-17 1985-01-17 Method of making integrated circuit silicon die composite having hot melt adhesive on its silicon base
US692088 1985-01-17

Publications (2)

Publication Number Publication Date
KR860006133A true KR860006133A (ko) 1986-08-18
KR930006528B1 KR930006528B1 (ko) 1993-07-16

Family

ID=24779210

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850005982A KR930006528B1 (ko) 1985-01-17 1985-08-20 집적회로 실리콘 다이 복합체 제조 방법

Country Status (7)

Country Link
US (1) US4624724A (ko)
JP (1) JPS61201432A (ko)
KR (1) KR930006528B1 (ko)
CN (1) CN1004843B (ko)
DE (1) DE3600895A1 (ko)
FR (1) FR2576148B1 (ko)
GB (1) GB2170042B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296074A (en) * 1987-03-30 1994-03-22 E. I. Du Pont De Nemours And Company Method for bonding small electronic components
DE3739333C2 (de) * 1987-11-20 1995-04-20 Telefunken Microelectron Verfahren zur Herstellung von Klebeverbindungen für Elektronik- und Mikroelektronikanwendungen
US5300812A (en) * 1992-12-09 1994-04-05 General Electric Company Plasticized polyetherimide adhesive composition and usage
DE4413529C2 (de) * 1994-04-15 1996-07-25 Tele Filter Tft Gmbh Verfahren zur Herstellung elektronischer Oberflächenwellenbauelemente sowie ein nach dem Verfahren hergestelltes elektronisches Bauelement
JPH1135893A (ja) 1997-05-22 1999-02-09 Toray Dow Corning Silicone Co Ltd シート状ホットメルト接着剤、および半導体装置
CN111599743A (zh) * 2020-07-06 2020-08-28 绍兴同芯成集成电路有限公司 复合式胶膜结合通孔玻璃载板结构生产晶圆的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600246A (en) * 1968-05-17 1971-08-17 Rca Corp Method of making laminated semiconductor devices
GB1285708A (en) * 1968-10-28 1972-08-16 Lucas Industries Ltd Semi-conductor devices
US3600240A (en) * 1968-12-12 1971-08-17 Ibm Epitaxial growth from solution with amphoteric dopant
US3706409A (en) * 1970-02-26 1972-12-19 Gen Electric Semiconductor lead attachment system including a semiconductor pellet orientation plate
US4021279A (en) * 1972-04-20 1977-05-03 Stichting Reactor Centrum Nederland Method of forming groove pattern
DE2436600A1 (de) * 1974-07-30 1976-02-19 Semikron Gleichrichterbau Verfahren zur erzielung einer oberflaechenstabilisierenden schutzschicht bei halbleiterbauelementen
US4011279A (en) * 1975-09-23 1977-03-08 General Electric Company Process for making polyimide-polydiorganosiloxane block polymers
DE2653366A1 (de) * 1976-11-24 1978-06-01 Siemens Ag Verfahren zum teilautomatisierten verbinden von halbleiterchips mit einem traeger
US4347302A (en) * 1980-06-06 1982-08-31 Alexander Gotman Process for applying a thin coating in liquid form and subsequently drying it
US4385083A (en) * 1980-08-25 1983-05-24 Applied Magnetics Corporation Apparatus and method for forming a thin film of coating material on a substrate having a vacuum applied to the edge thereof
EP0051165A1 (en) * 1980-11-03 1982-05-12 BURROUGHS CORPORATION (a Michigan corporation) Repairable IC package with thermoplastic chip attach
JPS5827721A (ja) * 1981-08-10 1983-02-18 Hitachi Chem Co Ltd ポリアミド酸シリコン型中間体及びポリイミドシリコン共重合体樹脂の製造法
JPS5844712B2 (ja) * 1981-07-07 1983-10-05 日立化成工業株式会社 接着剤組成物

Also Published As

Publication number Publication date
CN1004843B (zh) 1989-07-19
GB2170042B (en) 1988-05-25
DE3600895A1 (de) 1986-07-17
FR2576148B1 (fr) 1991-09-06
KR930006528B1 (ko) 1993-07-16
GB8521611D0 (en) 1985-10-02
JPS61201432A (ja) 1986-09-06
CN86100204A (zh) 1986-08-13
GB2170042A (en) 1986-07-23
FR2576148A1 (fr) 1986-07-18
US4624724A (en) 1986-11-25

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