CN86100204A - 硅基底上附有热熔粘合剂的集成电路硅小片复合物的制做方法 - Google Patents

硅基底上附有热熔粘合剂的集成电路硅小片复合物的制做方法 Download PDF

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CN86100204A
CN86100204A CN86100204.0A CN86100204A CN86100204A CN 86100204 A CN86100204 A CN 86100204A CN 86100204 A CN86100204 A CN 86100204A CN 86100204 A CN86100204 A CN 86100204A
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加里·查尔斯·戴维斯
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Abstract

本文提供了一种制做在硅基底上附有热熔粘合剂的集成电路硅组合件小片的方法。当一种热熔粘合剂被甩涂到硅基上之后，片状的集成电路组合件硅片被切割，同时，由将集成电路硅小片整体地粘在导体衬底上的方法，可制出集成电路硅组合件阵列。

Description

在本发明以前，集成电路硅小片复合物的制做，一般是通过将一个表面上有许多集成电路的硅片切成小块来实现。片状的小片，一般是采用金刚划片器，激光划片器或金刚锯切割而成。然后，将集成的小片组合件粘在各种各样的导电或非导电衬底上，以做成集成电路阵列。集成电路硅小片组合件在载体上的敷贴，一般是在集成的小片组合件的硅基底上，涂上一种粘合剂，然后将集成小片组合件，放在载体的合适位置上来实现。另一种技术则包括直接将粘合剂涂在载体衬底上，并且把集成电路小片粘合在其上。尽管把粘合剂涂到载体阵列衬底的工艺，已取得了有效的结果，但粘合剂中往往含有一种对载体衬底上的相邻部件有损伤的有机溶剂。还有一种将粘合剂直接涂到集成电路硅组合件的基底上的工艺，它是有效的，只是不经济。
本发明的基础，是将一种热熔粘合剂的有机溶剂溶液，最好聚醚亚胺硅氧烷（将在后面详细说明），在集成小晶片的背面被甩成薄膜形状然后烘干;这样片状集成电路小片可以被切割。用一只金刚划片器或一只金刚锯，可大量制备在相应硅基底上有一层热熔粘合剂的集成电路硅组合件小片。
本发明提供了一种方法，它包括：
（1）把一种有机溶剂溶液的热熔粘合剂，涂到其上部有着大量的集成电路的硅片基底上。
（2）将使用的热熔粘合剂干燥。
（3）切割硅片以制备许多在相应基底上有热熔粘合剂层的集成电路硅小片组合件。
本发明的另一面：是提供一种将集成电路硅复合物粘合剂衬底表面上的方法，这包括：
（1）将衬底的表面与至少是一片的集成电路硅组合件小片接触，这小片是已经热熔粘合剂处理过的。
（2）当集成电路硅复合物小片与衬底表面接触时，经热熔粘合剂加热。
（3）使热熔粘合剂冷却，以达到将集成电路组合件小片粘在载体衬底上的目的。
图1显示了基底上涂了热熔粘合剂的片状集成电路小片的剖视图。图2显示了由切割图1所示片状晶片所得的集成电路组合件小片。图3则是一个带适当电接点的整体粘在载体表面上的集成电路组合件小片阵列。
特别是，图1中的10是一绝缘栅极，11是一个信号电极，12是硅基片，而13是热熔粘合剂层。
在图3中，20是源信号电极，21是控制栅极。
本发明实际所采用的热熔粘合剂，是聚醚亚胺硅氧烷，它已被Berger和Juliano描述（见美国专利4，011，279，这一专利与本发明选定同一委托人，在这里引入做为参考）。用于本发明实施的附加热熔粘合剂，可以是任意热塑性材料，其软化温度范围约为100℃-300℃，150℃-200℃更好。热熔粘合剂涂敷，可通过涂一种热熔热塑性材料的有机溶剂溶液来实现。一种典型的混合物，可以是N甲基吡喀烷酮或者二甘醇二甲醚一类有机溶剂中的聚醚亚胺聚硅氧烷。
在本发明的实施中，片状集成电路晶片的基底经过了热熔粘合剂有机溶剂溶液的处理。热熔粘合剂以每分钟2000-7000转的速度被甩在硅片的背面。然后，将经过处理的片子是在大约为100-120℃下加热30-60分钟，而后再在大约180°-220℃温度下烘烤0.5-1小时。这样，在硅片表面，会产生厚度从0.5微米到25微米的一层热熔粘合剂膜。
这样硅片再经过金刚划片器，激光划片器或金刚锯的切割，就制成了大批集成电路硅组合件小片。
将前述的一个或多个集成电路硅组合件小片装到载体，如非导电衬底像氧化铝或氧化铍或导电衬底像铝或铜上，就可以组合成一个集成电路的阵列。在从100-300℃的温度范围内，对集成组合件基底上的热熔粘合剂，予以局部加热，当冷却后，复合物就被整体的粘接在载体的衬底上了。再加上合适的连接就可以产生一个如图3所示的集成电路硅组合件的阵列。
为使本领域的技术人员，更好地实施本发明，下面给出一些例子，用以阐述发明，所有份数以重量计，但并不受限制。
实施例1
表面上有大量集成电路硅组合件的，直径为3英寸的10密尔厚硅片的背面上，用完全亚胺化的聚醚亚胺硅氧烷来处理。这里，聚醚酰亚胺硅氧烷已通过丙撑链连接到与双酚-A酰亚胺基相连的聚二甲基硅氧烷的嵌段上。这里还应用了在二甘醇二甲醚中的聚醚亚胺硅氧烷溶液。在以每分钟2000转的速度，将涂敷的聚醚亚胺硅氧烷甩30秒钟之后，将硅片在120℃下干燥 1/2 小时，然后，在150℃下干燥2.5小时。于是得到了基底上涂有15微米厚聚醚亚胺的片状集成电路组合件。该片再由自动微型1006A型金刚锯切割，从而产生50块直径为100密尔的小集成电路硅小片组合件。
一个集成电路硅组合件阵列的制做，可通过将几个集成电路硅组合件小片，放置在氧化铝衬底子来实现。该小片要保持与衬底紧密接触，以便使聚醚亚胺硅氧烷升到允许其软化的温度，约200℃，然后，通过冷却，将集成电路小片粘接在载体表面上。于是，通过相应连接各种集成电路的栅极以及源信号电极，就可制成一个可用的集成电路硅组合件阵列。
应当指出，尽管上述实施例只针对着可被用于本发明方法，许多实际施例中的一小部分，本发明方法却是适用于各种热熔粘合剂的。

Claims (3)

1、一种在硅基底上附有热熔粘合剂的集成电路硅小片复合物的制做方法，其特征在于该方法包括：
(1)将一种热熔粘合剂的有机溶剂溶液甩涂到其上表面，有着大量的集成电路的硅片的基底上。
(2)使涂好的热熔粘合剂干燥。
(3)切割硅片以制备出大批在相应基底上有一层热熔粘合剂薄层的集成电路硅小片组合件。
2、根据权利要求1所述的方法，其中所用的热熔粘合剂是聚醚亚胺硅氧烷。
3、根据权利要求1所述的方法，其中将数片集成电路硅小片组合件粘在氧化铝衬底，可制成集成电路硅组合件阵列。
CN86100204.0A 1985-01-17 1986-01-17 基底附热熔粘合剂集成电路硅芯片复合物的制做方法 Expired CN1004843B (zh)

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US06/692,088 US4624724A (en) 1985-01-17 1985-01-17 Method of making integrated circuit silicon die composite having hot melt adhesive on its silicon base

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CN111599743A (zh) * 2020-07-06 2020-08-28 绍兴同芯成集成电路有限公司 复合式胶膜结合通孔玻璃载板结构生产晶圆的方法
CN111599743B (zh) * 2020-07-06 2024-05-28 绍兴同芯成集成电路有限公司 复合式胶膜结合通孔玻璃载板结构生产晶圆的方法

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JPS5844712B2 (ja) * 1981-07-07 1983-10-05 日立化成工業株式会社 接着剤組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111599743A (zh) * 2020-07-06 2020-08-28 绍兴同芯成集成电路有限公司 复合式胶膜结合通孔玻璃载板结构生产晶圆的方法
CN111599743B (zh) * 2020-07-06 2024-05-28 绍兴同芯成集成电路有限公司 复合式胶膜结合通孔玻璃载板结构生产晶圆的方法

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GB2170042B (en) 1988-05-25
DE3600895A1 (de) 1986-07-17
GB2170042A (en) 1986-07-23
KR860006133A (ko) 1986-08-18
FR2576148B1 (fr) 1991-09-06
JPS61201432A (ja) 1986-09-06
GB8521611D0 (en) 1985-10-02
US4624724A (en) 1986-11-25
CN1004843B (zh) 1989-07-19
FR2576148A1 (fr) 1986-07-18
KR930006528B1 (ko) 1993-07-16

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