KR860001502A - 반도체레이저 - Google Patents

반도체레이저 Download PDF

Info

Publication number
KR860001502A
KR860001502A KR1019850004333A KR850004333A KR860001502A KR 860001502 A KR860001502 A KR 860001502A KR 1019850004333 A KR1019850004333 A KR 1019850004333A KR 850004333 A KR850004333 A KR 850004333A KR 860001502 A KR860001502 A KR 860001502A
Authority
KR
South Korea
Prior art keywords
layer
semiconductor laser
active layer
current
absorbing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019850004333A
Other languages
English (en)
Korean (ko)
Inventor
다까요시 마미네 (외 2)
Original Assignee
오오가 노리오
쏘니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 쏘니 가부시기가이샤 filed Critical 오오가 노리오
Publication of KR860001502A publication Critical patent/KR860001502A/ko
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
KR1019850004333A 1984-07-18 1985-06-19 반도체레이저 Granted KR860001502A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59149239A JPH0685455B2 (ja) 1984-07-18 1984-07-18 半導体レーザー
JP84-149239 1984-07-18

Publications (1)

Publication Number Publication Date
KR860001502A true KR860001502A (ko) 1986-02-26

Family

ID=15470921

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019850004333A Granted KR860001502A (ko) 1984-07-18 1985-06-19 반도체레이저
KR1019850004333A Expired - Lifetime KR0128711B1 (ko) 1984-07-18 1985-06-19 반도체레이저

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019850004333A Expired - Lifetime KR0128711B1 (ko) 1984-07-18 1985-06-19 반도체레이저

Country Status (7)

Country Link
JP (1) JPH0685455B2 (enrdf_load_stackoverflow)
KR (2) KR860001502A (enrdf_load_stackoverflow)
CA (1) CA1253945A (enrdf_load_stackoverflow)
DE (1) DE3525703A1 (enrdf_load_stackoverflow)
FR (1) FR2568064A1 (enrdf_load_stackoverflow)
GB (1) GB2163288A (enrdf_load_stackoverflow)
NL (1) NL8502080A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5161167A (en) * 1990-06-21 1992-11-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser producing visible light

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143787A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor laser
EP0014588B1 (en) * 1979-02-13 1983-12-14 Fujitsu Limited A semiconductor light emitting device
JPS5640292A (en) * 1979-09-11 1981-04-16 Fujitsu Ltd Semiconductor laser
US4323859A (en) * 1980-02-04 1982-04-06 Northern Telecom Limited Chanelled substrate double heterostructure lasers
US4329189A (en) * 1980-02-04 1982-05-11 Northern Telecom Limited Channelled substrate double heterostructure lasers
JPS5736882A (ja) * 1980-08-15 1982-02-27 Nec Corp Sutoraipugatadaburuheterosetsugoreezasoshi
JPS57170584A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
GB2105099B (en) * 1981-07-02 1985-06-12 Standard Telephones Cables Ltd Injection laser
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same

Also Published As

Publication number Publication date
NL8502080A (nl) 1986-02-17
CA1253945A (en) 1989-05-09
GB2163288A (en) 1986-02-19
FR2568064A1 (fr) 1986-01-24
JPH0685455B2 (ja) 1994-10-26
DE3525703A1 (de) 1986-02-20
GB8518182D0 (en) 1985-08-21
JPS6127694A (ja) 1986-02-07
KR0128711B1 (ko) 1998-04-07
FR2568064B1 (enrdf_load_stackoverflow) 1994-04-22

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