NL8502080A - Halfgeleiderlaser. - Google Patents
Halfgeleiderlaser. Download PDFInfo
- Publication number
- NL8502080A NL8502080A NL8502080A NL8502080A NL8502080A NL 8502080 A NL8502080 A NL 8502080A NL 8502080 A NL8502080 A NL 8502080A NL 8502080 A NL8502080 A NL 8502080A NL 8502080 A NL8502080 A NL 8502080A
- Authority
- NL
- Netherlands
- Prior art keywords
- light
- semiconductor laser
- layer
- absorbing layer
- active layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 56
- 239000010410 layer Substances 0.000 claims description 94
- 239000011247 coating layer Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 230000000670 limiting effect Effects 0.000 claims description 5
- 230000008901 benefit Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000003321 amplification Effects 0.000 description 5
- 238000005253 cladding Methods 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 230000002787 reinforcement Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59149239A JPH0685455B2 (ja) | 1984-07-18 | 1984-07-18 | 半導体レーザー |
| JP14923984 | 1984-07-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8502080A true NL8502080A (nl) | 1986-02-17 |
Family
ID=15470921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8502080A NL8502080A (nl) | 1984-07-18 | 1985-07-18 | Halfgeleiderlaser. |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPH0685455B2 (enrdf_load_stackoverflow) |
| KR (2) | KR860001502A (enrdf_load_stackoverflow) |
| CA (1) | CA1253945A (enrdf_load_stackoverflow) |
| DE (1) | DE3525703A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2568064A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2163288A (enrdf_load_stackoverflow) |
| NL (1) | NL8502080A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5161167A (en) * | 1990-06-21 | 1992-11-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser producing visible light |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143787A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor laser |
| DE3065856D1 (en) * | 1979-02-13 | 1984-01-19 | Fujitsu Ltd | A semiconductor light emitting device |
| JPS5640292A (en) * | 1979-09-11 | 1981-04-16 | Fujitsu Ltd | Semiconductor laser |
| US4329189A (en) * | 1980-02-04 | 1982-05-11 | Northern Telecom Limited | Channelled substrate double heterostructure lasers |
| US4323859A (en) * | 1980-02-04 | 1982-04-06 | Northern Telecom Limited | Chanelled substrate double heterostructure lasers |
| JPS5736882A (ja) * | 1980-08-15 | 1982-02-27 | Nec Corp | Sutoraipugatadaburuheterosetsugoreezasoshi |
| JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
| GB2105099B (en) * | 1981-07-02 | 1985-06-12 | Standard Telephones Cables Ltd | Injection laser |
| JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
| GB2139422B (en) * | 1983-03-24 | 1987-06-03 | Hitachi Ltd | Semiconductor laser and method of fabricating the same |
-
1984
- 1984-07-18 JP JP59149239A patent/JPH0685455B2/ja not_active Expired - Lifetime
-
1985
- 1985-06-19 KR KR1019850004333A patent/KR860001502A/ko active Granted
- 1985-06-19 KR KR1019850004333A patent/KR0128711B1/ko not_active Expired - Lifetime
- 1985-07-17 CA CA000486983A patent/CA1253945A/en not_active Expired
- 1985-07-18 NL NL8502080A patent/NL8502080A/nl not_active Application Discontinuation
- 1985-07-18 FR FR8511015A patent/FR2568064A1/fr active Granted
- 1985-07-18 DE DE19853525703 patent/DE3525703A1/de not_active Ceased
- 1985-07-18 GB GB08518182A patent/GB2163288A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR2568064A1 (fr) | 1986-01-24 |
| KR0128711B1 (ko) | 1998-04-07 |
| GB2163288A (en) | 1986-02-19 |
| CA1253945A (en) | 1989-05-09 |
| JPH0685455B2 (ja) | 1994-10-26 |
| GB8518182D0 (en) | 1985-08-21 |
| KR860001502A (ko) | 1986-02-26 |
| DE3525703A1 (de) | 1986-02-20 |
| JPS6127694A (ja) | 1986-02-07 |
| FR2568064B1 (enrdf_load_stackoverflow) | 1994-04-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| BV | The patent application has lapsed |