FR2568064A1 - Laser a semi-conducteur pour limiter et supprimer un bruit de sauts et reduction du courant de seuil - Google Patents
Laser a semi-conducteur pour limiter et supprimer un bruit de sauts et reduction du courant de seuil Download PDFInfo
- Publication number
- FR2568064A1 FR2568064A1 FR8511015A FR8511015A FR2568064A1 FR 2568064 A1 FR2568064 A1 FR 2568064A1 FR 8511015 A FR8511015 A FR 8511015A FR 8511015 A FR8511015 A FR 8511015A FR 2568064 A1 FR2568064 A1 FR 2568064A1
- Authority
- FR
- France
- Prior art keywords
- layer
- semiconductor laser
- light
- active layer
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 59
- 230000009467 reduction Effects 0.000 title description 3
- 239000010410 layer Substances 0.000 description 95
- 239000011247 coating layer Substances 0.000 description 14
- 230000031700 light absorption Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 6
- 230000002745 absorbent Effects 0.000 description 5
- 239000002250 absorbent Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000035558 fertility Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59149239A JPH0685455B2 (ja) | 1984-07-18 | 1984-07-18 | 半導体レーザー |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2568064A1 true FR2568064A1 (fr) | 1986-01-24 |
| FR2568064B1 FR2568064B1 (enrdf_load_stackoverflow) | 1994-04-22 |
Family
ID=15470921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8511015A Granted FR2568064A1 (fr) | 1984-07-18 | 1985-07-18 | Laser a semi-conducteur pour limiter et supprimer un bruit de sauts et reduction du courant de seuil |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPH0685455B2 (enrdf_load_stackoverflow) |
| KR (2) | KR860001502A (enrdf_load_stackoverflow) |
| CA (1) | CA1253945A (enrdf_load_stackoverflow) |
| DE (1) | DE3525703A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2568064A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2163288A (enrdf_load_stackoverflow) |
| NL (1) | NL8502080A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0462816A3 (en) * | 1990-06-21 | 1992-04-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser producing visible light |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4323859A (en) * | 1980-02-04 | 1982-04-06 | Northern Telecom Limited | Chanelled substrate double heterostructure lasers |
| GB2105099A (en) * | 1981-07-02 | 1983-03-16 | Standard Telephones Cables Ltd | Injection laser |
| DE3410793A1 (de) * | 1983-03-24 | 1984-10-04 | Hitachi, Ltd., Tokio/Tokyo | Halbleiter-laservorrichtung |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143787A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor laser |
| EP0014588B1 (en) * | 1979-02-13 | 1983-12-14 | Fujitsu Limited | A semiconductor light emitting device |
| JPS5640292A (en) * | 1979-09-11 | 1981-04-16 | Fujitsu Ltd | Semiconductor laser |
| US4329189A (en) * | 1980-02-04 | 1982-05-11 | Northern Telecom Limited | Channelled substrate double heterostructure lasers |
| JPS5736882A (ja) * | 1980-08-15 | 1982-02-27 | Nec Corp | Sutoraipugatadaburuheterosetsugoreezasoshi |
| JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
| JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
-
1984
- 1984-07-18 JP JP59149239A patent/JPH0685455B2/ja not_active Expired - Lifetime
-
1985
- 1985-06-19 KR KR1019850004333A patent/KR860001502A/ko active Granted
- 1985-06-19 KR KR1019850004333A patent/KR0128711B1/ko not_active Expired - Lifetime
- 1985-07-17 CA CA000486983A patent/CA1253945A/en not_active Expired
- 1985-07-18 FR FR8511015A patent/FR2568064A1/fr active Granted
- 1985-07-18 DE DE19853525703 patent/DE3525703A1/de not_active Ceased
- 1985-07-18 NL NL8502080A patent/NL8502080A/nl not_active Application Discontinuation
- 1985-07-18 GB GB08518182A patent/GB2163288A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4323859A (en) * | 1980-02-04 | 1982-04-06 | Northern Telecom Limited | Chanelled substrate double heterostructure lasers |
| GB2105099A (en) * | 1981-07-02 | 1983-03-16 | Standard Telephones Cables Ltd | Injection laser |
| DE3410793A1 (de) * | 1983-03-24 | 1984-10-04 | Hitachi, Ltd., Tokio/Tokyo | Halbleiter-laservorrichtung |
Non-Patent Citations (2)
| Title |
|---|
| ELECTRONICS LETTERS, vol. 17, no. 1, 8 janvier 1981, pages 17-19, Londres, GB; H. IMAI et al.: "InGaAsP/InP separated multiclad layer stripe geometry lasers emitting at 1.5 mum" * |
| INTERNATIONAL ELECTRON DEVICES MEETING, Washington, 5-7 décembre 1983, pages 12.2: 292-295, IEEE, New York, US; M. OKAJIMA et al.: "Transverse-mode stabilized GaAlAs laser with an embedded confining layer on optical guide by MOCVD" * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0462816A3 (en) * | 1990-06-21 | 1992-04-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser producing visible light |
| US5161167A (en) * | 1990-06-21 | 1992-11-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser producing visible light |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1253945A (en) | 1989-05-09 |
| KR860001502A (ko) | 1986-02-26 |
| JPS6127694A (ja) | 1986-02-07 |
| KR0128711B1 (ko) | 1998-04-07 |
| GB8518182D0 (en) | 1985-08-21 |
| DE3525703A1 (de) | 1986-02-20 |
| JPH0685455B2 (ja) | 1994-10-26 |
| NL8502080A (nl) | 1986-02-17 |
| FR2568064B1 (enrdf_load_stackoverflow) | 1994-04-22 |
| GB2163288A (en) | 1986-02-19 |
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