KR0128711B1 - 반도체레이저 - Google Patents

반도체레이저

Info

Publication number
KR0128711B1
KR0128711B1 KR1019850004333A KR19850004333A KR0128711B1 KR 0128711 B1 KR0128711 B1 KR 0128711B1 KR 1019850004333 A KR1019850004333 A KR 1019850004333A KR 19850004333 A KR19850004333 A KR 19850004333A KR 0128711 B1 KR0128711 B1 KR 0128711B1
Authority
KR
South Korea
Prior art keywords
layer
active layer
light
semiconductor laser
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019850004333A
Other languages
English (en)
Korean (ko)
Inventor
다까요시 마미네
쓰네이찌 오까다
미찌오 지바
Original Assignee
오오가 노리오
쏘니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 쏘니 가부시기가이샤 filed Critical 오오가 노리오
Application granted granted Critical
Publication of KR0128711B1 publication Critical patent/KR0128711B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
KR1019850004333A 1984-07-18 1985-06-19 반도체레이저 Expired - Lifetime KR0128711B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP149239 1984-07-18
JP59149239A JPH0685455B2 (ja) 1984-07-18 1984-07-18 半導体レーザー
JP84-149239 1984-07-18

Publications (1)

Publication Number Publication Date
KR0128711B1 true KR0128711B1 (ko) 1998-04-07

Family

ID=15470921

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019850004333A Expired - Lifetime KR0128711B1 (ko) 1984-07-18 1985-06-19 반도체레이저
KR1019850004333A Granted KR860001502A (ko) 1984-07-18 1985-06-19 반도체레이저

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019850004333A Granted KR860001502A (ko) 1984-07-18 1985-06-19 반도체레이저

Country Status (7)

Country Link
JP (1) JPH0685455B2 (enrdf_load_stackoverflow)
KR (2) KR0128711B1 (enrdf_load_stackoverflow)
CA (1) CA1253945A (enrdf_load_stackoverflow)
DE (1) DE3525703A1 (enrdf_load_stackoverflow)
FR (1) FR2568064A1 (enrdf_load_stackoverflow)
GB (1) GB2163288A (enrdf_load_stackoverflow)
NL (1) NL8502080A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5161167A (en) * 1990-06-21 1992-11-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser producing visible light

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143787A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Semiconductor laser
EP0014588B1 (en) * 1979-02-13 1983-12-14 Fujitsu Limited A semiconductor light emitting device
JPS5640292A (en) * 1979-09-11 1981-04-16 Fujitsu Ltd Semiconductor laser
US4323859A (en) * 1980-02-04 1982-04-06 Northern Telecom Limited Chanelled substrate double heterostructure lasers
US4329189A (en) * 1980-02-04 1982-05-11 Northern Telecom Limited Channelled substrate double heterostructure lasers
JPS5736882A (ja) * 1980-08-15 1982-02-27 Nec Corp Sutoraipugatadaburuheterosetsugoreezasoshi
JPS57170584A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
GB2105099B (en) * 1981-07-02 1985-06-12 Standard Telephones Cables Ltd Injection laser
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same

Also Published As

Publication number Publication date
FR2568064B1 (enrdf_load_stackoverflow) 1994-04-22
GB2163288A (en) 1986-02-19
JPH0685455B2 (ja) 1994-10-26
JPS6127694A (ja) 1986-02-07
NL8502080A (nl) 1986-02-17
CA1253945A (en) 1989-05-09
FR2568064A1 (fr) 1986-01-24
KR860001502A (ko) 1986-02-26
GB8518182D0 (en) 1985-08-21
DE3525703A1 (de) 1986-02-20

Similar Documents

Publication Publication Date Title
GB2080609A (en) Tapered stripe semiconductor laser
JPH10303500A (ja) 高出力半導体レーザダイオード
US4553239A (en) Distributed feedback semiconductor laser
US5751756A (en) Semiconductor laser device for use as a light source of an optical disk or the like
KR0128711B1 (ko) 반도체레이저
US6055255A (en) Semiconductor laser device and method for producing the same
KR100495220B1 (ko) 고차모드 흡수층을 갖는 반도체 레이저 다이오드
RU2035103C1 (ru) Инжекционный лазер
US4961196A (en) Semiconductor laser
KR19990087508A (ko) 반도체 레이저
JPH0587997B2 (enrdf_load_stackoverflow)
KR100265806B1 (ko) 레이저 다이오드와 그 제조방법
JP3440980B2 (ja) 自励発振型半導体レーザ装置の製造方法
JP3008830B2 (ja) 半導体レーザ
JPH09205253A (ja) 半導体レーザ装置および光ピックアップ装置
JP3144821B2 (ja) 半導体レーザ装置
JP2002223038A (ja) 半導体レーザ装置
JPS6251281A (ja) 半導体レ−ザ
JPS6151889A (ja) 半導体レ−ザ−
JPS62108590A (ja) 半導体レ−ザ及びその製造方法
JPH03154391A (ja) 半導体レーザ装置
JPS59189693A (ja) 半導体レ−ザ装置
JPS62165389A (ja) 半導体レ−ザ
JPS58197789A (ja) 半導体レ−ザ
JPS63316495A (ja) 半導体レ−ザ共振器

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19850619

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19900524

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19850619

Comment text: Patent Application

PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19930511

Patent event code: PE09021S01D

PE0601 Decision on rejection of patent

Patent event date: 19930914

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 19930511

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19951229

Patent event code: PE09021S01D

PE0601 Decision on rejection of patent

Patent event date: 19960719

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 19951229

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 19930511

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19971027

PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19971104

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19971104

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20000321

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20011024

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20021023

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20031015

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20041020

Start annual number: 8

End annual number: 8

PC1801 Expiration of term

Termination date: 20060410

Termination category: Expiration of duration