DE3525703A1 - Halbleiterlaser - Google Patents
HalbleiterlaserInfo
- Publication number
- DE3525703A1 DE3525703A1 DE19853525703 DE3525703A DE3525703A1 DE 3525703 A1 DE3525703 A1 DE 3525703A1 DE 19853525703 DE19853525703 DE 19853525703 DE 3525703 A DE3525703 A DE 3525703A DE 3525703 A1 DE3525703 A1 DE 3525703A1
- Authority
- DE
- Germany
- Prior art keywords
- light
- semiconductor laser
- layer
- active layer
- absorbing layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 64
- 238000005253 cladding Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 8
- 238000005744 Teer Meer reaction Methods 0.000 claims 1
- 230000008859 change Effects 0.000 description 4
- 230000002787 reinforcement Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- ONIKNECPXCLUHT-UHFFFAOYSA-N 2-chlorobenzoyl chloride Chemical compound ClC(=O)C1=CC=CC=C1Cl ONIKNECPXCLUHT-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 210000001015 abdomen Anatomy 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59149239A JPH0685455B2 (ja) | 1984-07-18 | 1984-07-18 | 半導体レーザー |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3525703A1 true DE3525703A1 (de) | 1986-02-20 |
Family
ID=15470921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19853525703 Ceased DE3525703A1 (de) | 1984-07-18 | 1985-07-18 | Halbleiterlaser |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPH0685455B2 (enrdf_load_stackoverflow) |
| KR (2) | KR860001502A (enrdf_load_stackoverflow) |
| CA (1) | CA1253945A (enrdf_load_stackoverflow) |
| DE (1) | DE3525703A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2568064A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2163288A (enrdf_load_stackoverflow) |
| NL (1) | NL8502080A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5161167A (en) * | 1990-06-21 | 1992-11-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser producing visible light |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143787A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor laser |
| EP0025362A2 (en) * | 1979-09-11 | 1981-03-18 | Fujitsu Limited | A semiconductor light emitting device |
| US4329660A (en) * | 1979-02-13 | 1982-05-11 | Fijitsu Limited | Semiconductor light emitting device |
| GB2105099A (en) * | 1981-07-02 | 1983-03-16 | Standard Telephones Cables Ltd | Injection laser |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4323859A (en) * | 1980-02-04 | 1982-04-06 | Northern Telecom Limited | Chanelled substrate double heterostructure lasers |
| US4329189A (en) * | 1980-02-04 | 1982-05-11 | Northern Telecom Limited | Channelled substrate double heterostructure lasers |
| JPS5736882A (ja) * | 1980-08-15 | 1982-02-27 | Nec Corp | Sutoraipugatadaburuheterosetsugoreezasoshi |
| JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
| JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
| GB2139422B (en) * | 1983-03-24 | 1987-06-03 | Hitachi Ltd | Semiconductor laser and method of fabricating the same |
-
1984
- 1984-07-18 JP JP59149239A patent/JPH0685455B2/ja not_active Expired - Lifetime
-
1985
- 1985-06-19 KR KR1019850004333A patent/KR860001502A/ko active Granted
- 1985-06-19 KR KR1019850004333A patent/KR0128711B1/ko not_active Expired - Lifetime
- 1985-07-17 CA CA000486983A patent/CA1253945A/en not_active Expired
- 1985-07-18 FR FR8511015A patent/FR2568064A1/fr active Granted
- 1985-07-18 DE DE19853525703 patent/DE3525703A1/de not_active Ceased
- 1985-07-18 NL NL8502080A patent/NL8502080A/nl not_active Application Discontinuation
- 1985-07-18 GB GB08518182A patent/GB2163288A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143787A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor laser |
| US4329660A (en) * | 1979-02-13 | 1982-05-11 | Fijitsu Limited | Semiconductor light emitting device |
| EP0025362A2 (en) * | 1979-09-11 | 1981-03-18 | Fujitsu Limited | A semiconductor light emitting device |
| GB2105099A (en) * | 1981-07-02 | 1983-03-16 | Standard Telephones Cables Ltd | Injection laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1253945A (en) | 1989-05-09 |
| KR860001502A (ko) | 1986-02-26 |
| JPS6127694A (ja) | 1986-02-07 |
| KR0128711B1 (ko) | 1998-04-07 |
| GB8518182D0 (en) | 1985-08-21 |
| FR2568064A1 (fr) | 1986-01-24 |
| JPH0685455B2 (ja) | 1994-10-26 |
| NL8502080A (nl) | 1986-02-17 |
| FR2568064B1 (enrdf_load_stackoverflow) | 1994-04-22 |
| GB2163288A (en) | 1986-02-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H01S 3/19 |
|
| 8131 | Rejection |