CA1253945A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- CA1253945A CA1253945A CA000486983A CA486983A CA1253945A CA 1253945 A CA1253945 A CA 1253945A CA 000486983 A CA000486983 A CA 000486983A CA 486983 A CA486983 A CA 486983A CA 1253945 A CA1253945 A CA 1253945A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- semiconductor laser
- active layer
- light
- light absorbing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000005253 cladding Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000000694 effects Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000000543 intermediate Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP149239/84 | 1984-07-18 | ||
| JP59149239A JPH0685455B2 (ja) | 1984-07-18 | 1984-07-18 | 半導体レーザー |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1253945A true CA1253945A (en) | 1989-05-09 |
Family
ID=15470921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000486983A Expired CA1253945A (en) | 1984-07-18 | 1985-07-17 | Semiconductor laser |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPH0685455B2 (enrdf_load_stackoverflow) |
| KR (2) | KR860001502A (enrdf_load_stackoverflow) |
| CA (1) | CA1253945A (enrdf_load_stackoverflow) |
| DE (1) | DE3525703A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2568064A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2163288A (enrdf_load_stackoverflow) |
| NL (1) | NL8502080A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5161167A (en) * | 1990-06-21 | 1992-11-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser producing visible light |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143787A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor laser |
| EP0014588B1 (en) * | 1979-02-13 | 1983-12-14 | Fujitsu Limited | A semiconductor light emitting device |
| JPS5640292A (en) * | 1979-09-11 | 1981-04-16 | Fujitsu Ltd | Semiconductor laser |
| US4323859A (en) * | 1980-02-04 | 1982-04-06 | Northern Telecom Limited | Chanelled substrate double heterostructure lasers |
| US4329189A (en) * | 1980-02-04 | 1982-05-11 | Northern Telecom Limited | Channelled substrate double heterostructure lasers |
| JPS5736882A (ja) * | 1980-08-15 | 1982-02-27 | Nec Corp | Sutoraipugatadaburuheterosetsugoreezasoshi |
| JPS57170584A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor laser device |
| GB2105099B (en) * | 1981-07-02 | 1985-06-12 | Standard Telephones Cables Ltd | Injection laser |
| JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
| GB2139422B (en) * | 1983-03-24 | 1987-06-03 | Hitachi Ltd | Semiconductor laser and method of fabricating the same |
-
1984
- 1984-07-18 JP JP59149239A patent/JPH0685455B2/ja not_active Expired - Lifetime
-
1985
- 1985-06-19 KR KR1019850004333A patent/KR860001502A/ko active Granted
- 1985-06-19 KR KR1019850004333A patent/KR0128711B1/ko not_active Expired - Lifetime
- 1985-07-17 CA CA000486983A patent/CA1253945A/en not_active Expired
- 1985-07-18 FR FR8511015A patent/FR2568064A1/fr active Granted
- 1985-07-18 DE DE19853525703 patent/DE3525703A1/de not_active Ceased
- 1985-07-18 NL NL8502080A patent/NL8502080A/nl not_active Application Discontinuation
- 1985-07-18 GB GB08518182A patent/GB2163288A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR860001502A (ko) | 1986-02-26 |
| JPS6127694A (ja) | 1986-02-07 |
| KR0128711B1 (ko) | 1998-04-07 |
| GB8518182D0 (en) | 1985-08-21 |
| DE3525703A1 (de) | 1986-02-20 |
| FR2568064A1 (fr) | 1986-01-24 |
| JPH0685455B2 (ja) | 1994-10-26 |
| NL8502080A (nl) | 1986-02-17 |
| FR2568064B1 (enrdf_load_stackoverflow) | 1994-04-22 |
| GB2163288A (en) | 1986-02-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |