JPS6257119B2 - - Google Patents
Info
- Publication number
- JPS6257119B2 JPS6257119B2 JP55125710A JP12571080A JPS6257119B2 JP S6257119 B2 JPS6257119 B2 JP S6257119B2 JP 55125710 A JP55125710 A JP 55125710A JP 12571080 A JP12571080 A JP 12571080A JP S6257119 B2 JPS6257119 B2 JP S6257119B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- laser diode
- carrier density
- layer
- density distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12571080A JPS5749292A (en) | 1980-09-08 | 1980-09-08 | Laser diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12571080A JPS5749292A (en) | 1980-09-08 | 1980-09-08 | Laser diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5749292A JPS5749292A (en) | 1982-03-23 |
JPS6257119B2 true JPS6257119B2 (enrdf_load_stackoverflow) | 1987-11-30 |
Family
ID=14916818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12571080A Granted JPS5749292A (en) | 1980-09-08 | 1980-09-08 | Laser diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5749292A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60249383A (ja) * | 1984-05-24 | 1985-12-10 | Sharp Corp | 半導体レ−ザ素子 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS597237B2 (ja) * | 1976-08-10 | 1984-02-17 | 日本電気株式会社 | 注入型半導体レ−ザ素子 |
-
1980
- 1980-09-08 JP JP12571080A patent/JPS5749292A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5749292A (en) | 1982-03-23 |
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