JPS5749292A - Laser diode - Google Patents

Laser diode

Info

Publication number
JPS5749292A
JPS5749292A JP12571080A JP12571080A JPS5749292A JP S5749292 A JPS5749292 A JP S5749292A JP 12571080 A JP12571080 A JP 12571080A JP 12571080 A JP12571080 A JP 12571080A JP S5749292 A JPS5749292 A JP S5749292A
Authority
JP
Japan
Prior art keywords
bottoms
laser beam
carrier density
grooves
shaped grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12571080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6257119B2 (enrdf_load_stackoverflow
Inventor
Saburo Takamiya
Shigeki Horiuchi
Kaname Otaki
Kenichi Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12571080A priority Critical patent/JPS5749292A/ja
Publication of JPS5749292A publication Critical patent/JPS5749292A/ja
Publication of JPS6257119B2 publication Critical patent/JPS6257119B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure

Landscapes

  • Semiconductor Lasers (AREA)
JP12571080A 1980-09-08 1980-09-08 Laser diode Granted JPS5749292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12571080A JPS5749292A (en) 1980-09-08 1980-09-08 Laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12571080A JPS5749292A (en) 1980-09-08 1980-09-08 Laser diode

Publications (2)

Publication Number Publication Date
JPS5749292A true JPS5749292A (en) 1982-03-23
JPS6257119B2 JPS6257119B2 (enrdf_load_stackoverflow) 1987-11-30

Family

ID=14916818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12571080A Granted JPS5749292A (en) 1980-09-08 1980-09-08 Laser diode

Country Status (1)

Country Link
JP (1) JPS5749292A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249383A (ja) * 1984-05-24 1985-12-10 Sharp Corp 半導体レ−ザ素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320786A (en) * 1976-08-10 1978-02-25 Nec Corp Injection type semiconductor laser element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320786A (en) * 1976-08-10 1978-02-25 Nec Corp Injection type semiconductor laser element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249383A (ja) * 1984-05-24 1985-12-10 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
JPS6257119B2 (enrdf_load_stackoverflow) 1987-11-30

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