KR840000082A - 반도체 기억장치와 그 제조법 - Google Patents

반도체 기억장치와 그 제조법 Download PDF

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Publication number
KR840000082A
KR840000082A KR1019820002028A KR820002028A KR840000082A KR 840000082 A KR840000082 A KR 840000082A KR 1019820002028 A KR1019820002028 A KR 1019820002028A KR 820002028 A KR820002028 A KR 820002028A KR 840000082 A KR840000082 A KR 840000082A
Authority
KR
South Korea
Prior art keywords
capacitor
film
semiconductor substrate
reference level
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019820002028A
Other languages
English (en)
Korean (ko)
Inventor
마사미찌 이시하라 (외 2)
Original Assignee
미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미다 가쓰시게
Publication of KR840000082A publication Critical patent/KR840000082A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H10D64/01346—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1019820002028A 1981-05-13 1982-05-10 반도체 기억장치와 그 제조법 Withdrawn KR840000082A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP81-70732 1981-05-13
JP56070732A JPS57186354A (en) 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof

Publications (1)

Publication Number Publication Date
KR840000082A true KR840000082A (ko) 1984-01-30

Family

ID=13439994

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019820002028A Withdrawn KR840000082A (ko) 1981-05-13 1982-05-10 반도체 기억장치와 그 제조법

Country Status (6)

Country Link
JP (1) JPS57186354A (enExample)
KR (1) KR840000082A (enExample)
DE (1) DE3217896A1 (enExample)
FR (1) FR2506058A1 (enExample)
GB (1) GB2098397A (enExample)
IT (1) IT1152129B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519461A1 (fr) * 1982-01-06 1983-07-08 Hitachi Ltd Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif
JPS58181319A (ja) * 1982-04-19 1983-10-24 Hitachi Ltd タイミング発生回路
JPH0612619B2 (ja) * 1982-09-22 1994-02-16 株式会社日立製作所 半導体メモリ装置
JPS59172761A (ja) * 1983-03-23 1984-09-29 Hitachi Ltd 半導体装置
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
JPS60206163A (ja) * 1984-03-30 1985-10-17 Toshiba Corp 半導体記憶装置
JPS6421788A (en) * 1987-07-16 1989-01-25 Nec Corp Semiconductor memory device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130908A1 (de) * 1970-06-22 1971-12-30 Cogar Corp Speicherzelle mit Metalloxidhalbleiter-Einrichtungen mit verschiedenen Steilheiten
DE2646245A1 (de) * 1975-10-28 1977-05-05 Motorola Inc Speicherschaltung
DE2633558C2 (de) * 1976-07-26 1978-08-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Speicherbaustein
JPS53112686A (en) * 1977-03-14 1978-10-02 Oki Electric Ind Co Ltd Manufacture for semiconductor device
JPS5559759A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
FR2506058B1 (enExample) 1985-04-12
IT1152129B (it) 1986-12-31
JPS57186354A (en) 1982-11-16
GB2098397A (en) 1982-11-17
FR2506058A1 (fr) 1982-11-19
IT8221211A0 (it) 1982-05-12
DE3217896A1 (de) 1983-05-26

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Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000