JPS57186354A - Semiconductor memory storage and manufacture thereof - Google Patents

Semiconductor memory storage and manufacture thereof

Info

Publication number
JPS57186354A
JPS57186354A JP56070732A JP7073281A JPS57186354A JP S57186354 A JPS57186354 A JP S57186354A JP 56070732 A JP56070732 A JP 56070732A JP 7073281 A JP7073281 A JP 7073281A JP S57186354 A JPS57186354 A JP S57186354A
Authority
JP
Japan
Prior art keywords
capacity
substrate
oxide film
section
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56070732A
Other languages
English (en)
Japanese (ja)
Inventor
Masamichi Ishihara
Masanori Hiroki
Takeshi Kajimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56070732A priority Critical patent/JPS57186354A/ja
Priority to GB8212113A priority patent/GB2098397A/en
Priority to FR8207966A priority patent/FR2506058A1/fr
Priority to KR1019820002028A priority patent/KR840000082A/ko
Priority to DE19823217896 priority patent/DE3217896A1/de
Priority to IT21211/82A priority patent/IT1152129B/it
Publication of JPS57186354A publication Critical patent/JPS57186354A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H10D64/01346—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP56070732A 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof Pending JPS57186354A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP56070732A JPS57186354A (en) 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof
GB8212113A GB2098397A (en) 1981-05-13 1982-04-27 Semiconductor memory device
FR8207966A FR2506058A1 (fr) 1981-05-13 1982-05-07 Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif
KR1019820002028A KR840000082A (ko) 1981-05-13 1982-05-10 반도체 기억장치와 그 제조법
DE19823217896 DE3217896A1 (de) 1981-05-13 1982-05-12 Halbleiterspeichervorrichtung und verfahren zu ihrer herstellung
IT21211/82A IT1152129B (it) 1981-05-13 1982-05-12 Dispositivo di memoria a semiconduttori e procedimento per la sua fabbricazione

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56070732A JPS57186354A (en) 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57186354A true JPS57186354A (en) 1982-11-16

Family

ID=13439994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56070732A Pending JPS57186354A (en) 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof

Country Status (6)

Country Link
JP (1) JPS57186354A (enExample)
KR (1) KR840000082A (enExample)
DE (1) DE3217896A1 (enExample)
FR (1) FR2506058A1 (enExample)
GB (1) GB2098397A (enExample)
IT (1) IT1152129B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519461A1 (fr) * 1982-01-06 1983-07-08 Hitachi Ltd Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif
JPS58181319A (ja) * 1982-04-19 1983-10-24 Hitachi Ltd タイミング発生回路
JPH0612619B2 (ja) * 1982-09-22 1994-02-16 株式会社日立製作所 半導体メモリ装置
JPS59172761A (ja) * 1983-03-23 1984-09-29 Hitachi Ltd 半導体装置
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
JPS60206163A (ja) * 1984-03-30 1985-10-17 Toshiba Corp 半導体記憶装置
JPS6421788A (en) * 1987-07-16 1989-01-25 Nec Corp Semiconductor memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5255341A (en) * 1975-10-28 1977-05-06 Motorola Inc Memory circuit
JPS53112686A (en) * 1977-03-14 1978-10-02 Oki Electric Ind Co Ltd Manufacture for semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130908A1 (de) * 1970-06-22 1971-12-30 Cogar Corp Speicherzelle mit Metalloxidhalbleiter-Einrichtungen mit verschiedenen Steilheiten
DE2633558C2 (de) * 1976-07-26 1978-08-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Speicherbaustein
JPS5559759A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5255341A (en) * 1975-10-28 1977-05-06 Motorola Inc Memory circuit
JPS53112686A (en) * 1977-03-14 1978-10-02 Oki Electric Ind Co Ltd Manufacture for semiconductor device

Also Published As

Publication number Publication date
FR2506058B1 (enExample) 1985-04-12
KR840000082A (ko) 1984-01-30
IT1152129B (it) 1986-12-31
GB2098397A (en) 1982-11-17
FR2506058A1 (fr) 1982-11-19
IT8221211A0 (it) 1982-05-12
DE3217896A1 (de) 1983-05-26

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