KR20230003301A - 메모리 시스템 및 정보 처리 시스템 - Google Patents

메모리 시스템 및 정보 처리 시스템 Download PDF

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Publication number
KR20230003301A
KR20230003301A KR1020227043138A KR20227043138A KR20230003301A KR 20230003301 A KR20230003301 A KR 20230003301A KR 1020227043138 A KR1020227043138 A KR 1020227043138A KR 20227043138 A KR20227043138 A KR 20227043138A KR 20230003301 A KR20230003301 A KR 20230003301A
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KR
South Korea
Prior art keywords
transistor
metal oxide
memory
layer
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020227043138A
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English (en)
Korean (ko)
Inventor
나오아키 츠츠이
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20230003301A publication Critical patent/KR20230003301A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G06F11/106—Correcting systematically all correctable errors, i.e. scrubbing
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Debugging And Monitoring (AREA)
  • Memory System (AREA)
KR1020227043138A 2015-02-26 2016-02-18 메모리 시스템 및 정보 처리 시스템 Ceased KR20230003301A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015036768 2015-02-26
JPJP-P-2015-036768 2015-02-26
KR1020177026159A KR20170122771A (ko) 2015-02-26 2016-02-18 메모리 시스템 및 정보 처리 시스템
PCT/IB2016/050865 WO2016135591A1 (en) 2015-02-26 2016-02-18 Memory system and information processing system

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177026159A Division KR20170122771A (ko) 2015-02-26 2016-02-18 메모리 시스템 및 정보 처리 시스템

Publications (1)

Publication Number Publication Date
KR20230003301A true KR20230003301A (ko) 2023-01-05

Family

ID=56787957

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020227043138A Ceased KR20230003301A (ko) 2015-02-26 2016-02-18 메모리 시스템 및 정보 처리 시스템
KR1020177026159A Ceased KR20170122771A (ko) 2015-02-26 2016-02-18 메모리 시스템 및 정보 처리 시스템

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177026159A Ceased KR20170122771A (ko) 2015-02-26 2016-02-18 메모리 시스템 및 정보 처리 시스템

Country Status (6)

Country Link
US (1) US9852023B2 (enExample)
JP (1) JP2016164780A (enExample)
KR (2) KR20230003301A (enExample)
DE (1) DE112016000926T5 (enExample)
TW (1) TWI696071B (enExample)
WO (1) WO2016135591A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6901831B2 (ja) 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 メモリシステム、及び情報処理システム
SG10201701689UA (en) * 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
US10223194B2 (en) 2016-11-04 2019-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage device, semiconductor device, electronic device, and server system
CN113424310A (zh) 2019-02-22 2021-09-21 株式会社半导体能源研究所 具有错误检测功能的存储装置、半导体装置以及电子设备
JP7581209B2 (ja) 2019-08-08 2024-11-12 株式会社半導体エネルギー研究所 半導体装置
KR20210022260A (ko) 2019-08-20 2021-03-03 삼성전자주식회사 메모리 컨트롤러의 구동방법, 메모리 컨트롤러 및 스토리지 장치
JP7577671B2 (ja) * 2019-09-20 2024-11-05 株式会社半導体エネルギー研究所 半導体装置
JP2021051399A (ja) * 2019-09-20 2021-04-01 キオクシア株式会社 記憶システムおよび保護方法
DE112020006360T5 (de) 2019-12-27 2022-10-27 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187950A (ja) 2010-02-12 2011-09-22 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP2011221996A (ja) 2010-03-24 2011-11-04 Panasonic Corp 不揮発性メモリコントローラ及び不揮発性記憶装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4073799B2 (ja) * 2003-02-07 2008-04-09 株式会社ルネサステクノロジ メモリシステム
JP2005078378A (ja) * 2003-08-29 2005-03-24 Sony Corp データ記憶装置及び不揮発性メモリに対するデータ書き込み方法
JP4528242B2 (ja) * 2005-10-20 2010-08-18 富士通セミコンダクター株式会社 メモリシステムおよびメモリシステムの動作方法
JP2008287404A (ja) 2007-05-16 2008-11-27 Hitachi Ltd 読み出しによる非アクセスメモリセルのデータ破壊を検出及び回復する装置、及びその方法
JP2009087509A (ja) * 2007-10-03 2009-04-23 Toshiba Corp 半導体記憶装置
US20110271032A1 (en) * 2009-07-30 2011-11-03 Panasonic Corporation Access device and memory controller
US20130254463A1 (en) 2012-03-23 2013-09-26 Kabushiki Kaisha Toshiba Memory system
JP6102632B2 (ja) * 2013-08-14 2017-03-29 ソニー株式会社 記憶制御装置、ホストコンピュータ、情報処理システムおよび記憶制御装置の制御方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187950A (ja) 2010-02-12 2011-09-22 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP2011221996A (ja) 2010-03-24 2011-11-04 Panasonic Corp 不揮発性メモリコントローラ及び不揮発性記憶装置

Also Published As

Publication number Publication date
US9852023B2 (en) 2017-12-26
US20160253236A1 (en) 2016-09-01
TW201643723A (zh) 2016-12-16
DE112016000926T5 (de) 2017-11-09
TWI696071B (zh) 2020-06-11
WO2016135591A1 (en) 2016-09-01
JP2016164780A (ja) 2016-09-08
KR20170122771A (ko) 2017-11-06

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