JP2016164780A - メモリシステム、および情報処理システム - Google Patents

メモリシステム、および情報処理システム Download PDF

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Publication number
JP2016164780A
JP2016164780A JP2016035144A JP2016035144A JP2016164780A JP 2016164780 A JP2016164780 A JP 2016164780A JP 2016035144 A JP2016035144 A JP 2016035144A JP 2016035144 A JP2016035144 A JP 2016035144A JP 2016164780 A JP2016164780 A JP 2016164780A
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JP
Japan
Prior art keywords
transistor
memory
metal oxide
layer
oxide layer
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JP2016035144A
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English (en)
Japanese (ja)
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JP2016164780A5 (enExample
Inventor
直昭 筒井
Naoaki Tsutsui
直昭 筒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JP2016164780A publication Critical patent/JP2016164780A/ja
Publication of JP2016164780A5 publication Critical patent/JP2016164780A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G06F11/106—Correcting systematically all correctable errors, i.e. scrubbing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Memory System (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Debugging And Monitoring (AREA)
JP2016035144A 2015-02-26 2016-02-26 メモリシステム、および情報処理システム Withdrawn JP2016164780A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015036768 2015-02-26
JP2015036768 2015-02-26

Publications (2)

Publication Number Publication Date
JP2016164780A true JP2016164780A (ja) 2016-09-08
JP2016164780A5 JP2016164780A5 (enExample) 2019-03-28

Family

ID=56787957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016035144A Withdrawn JP2016164780A (ja) 2015-02-26 2016-02-26 メモリシステム、および情報処理システム

Country Status (6)

Country Link
US (1) US9852023B2 (enExample)
JP (1) JP2016164780A (enExample)
KR (2) KR20170122771A (enExample)
DE (1) DE112016000926T5 (enExample)
TW (1) TWI696071B (enExample)
WO (1) WO2016135591A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020170069A1 (enExample) * 2019-02-22 2020-08-27

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6901831B2 (ja) 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 メモリシステム、及び情報処理システム
SG10201701689UA (en) * 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
US10223194B2 (en) 2016-11-04 2019-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage device, semiconductor device, electronic device, and server system
US11908947B2 (en) 2019-08-08 2024-02-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20210022260A (ko) 2019-08-20 2021-03-03 삼성전자주식회사 메모리 컨트롤러의 구동방법, 메모리 컨트롤러 및 스토리지 장치
DE112020004469T5 (de) * 2019-09-20 2022-08-04 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
JP2021051399A (ja) * 2019-09-20 2021-04-01 キオクシア株式会社 記憶システムおよび保護方法
CN114902414A (zh) 2019-12-27 2022-08-12 株式会社半导体能源研究所 半导体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070091678A1 (en) * 2005-10-20 2007-04-26 Fujitsu Limited Memory system and operating method of same
JP2011187950A (ja) * 2010-02-12 2011-09-22 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP2015036905A (ja) * 2013-08-14 2015-02-23 ソニー株式会社 記憶制御装置、ホストコンピュータ、情報処理システムおよび記憶制御装置の制御方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4073799B2 (ja) * 2003-02-07 2008-04-09 株式会社ルネサステクノロジ メモリシステム
JP2005078378A (ja) * 2003-08-29 2005-03-24 Sony Corp データ記憶装置及び不揮発性メモリに対するデータ書き込み方法
JP2008287404A (ja) * 2007-05-16 2008-11-27 Hitachi Ltd 読み出しによる非アクセスメモリセルのデータ破壊を検出及び回復する装置、及びその方法
JP2009087509A (ja) * 2007-10-03 2009-04-23 Toshiba Corp 半導体記憶装置
US20110271032A1 (en) * 2009-07-30 2011-11-03 Panasonic Corporation Access device and memory controller
JP5612514B2 (ja) 2010-03-24 2014-10-22 パナソニック株式会社 不揮発性メモリコントローラ及び不揮発性記憶装置
US20130254463A1 (en) 2012-03-23 2013-09-26 Kabushiki Kaisha Toshiba Memory system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070091678A1 (en) * 2005-10-20 2007-04-26 Fujitsu Limited Memory system and operating method of same
JP2007115013A (ja) * 2005-10-20 2007-05-10 Fujitsu Ltd メモリシステムおよびメモリシステムの動作方法
JP2011187950A (ja) * 2010-02-12 2011-09-22 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP2015036905A (ja) * 2013-08-14 2015-02-23 ソニー株式会社 記憶制御装置、ホストコンピュータ、情報処理システムおよび記憶制御装置の制御方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020170069A1 (enExample) * 2019-02-22 2020-08-27
WO2020170069A1 (ja) * 2019-02-22 2020-08-27 株式会社半導体エネルギー研究所 エラー検出機能を有する記憶装置、半導体装置、および、電子機器
JP7535032B2 (ja) 2019-02-22 2024-08-15 株式会社半導体エネルギー研究所 エラー検出機能を有する記憶装置、半導体装置、および、電子機器
US12225705B2 (en) 2019-02-22 2025-02-11 Semiconductor Energy Laboratory Co., Ltd. Memory device having error detection function, semiconductor device, and electronic device

Also Published As

Publication number Publication date
TWI696071B (zh) 2020-06-11
KR20230003301A (ko) 2023-01-05
US20160253236A1 (en) 2016-09-01
WO2016135591A1 (en) 2016-09-01
DE112016000926T5 (de) 2017-11-09
KR20170122771A (ko) 2017-11-06
TW201643723A (zh) 2016-12-16
US9852023B2 (en) 2017-12-26

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