KR20210144729A - GaN 기판 웨이퍼 및 GaN 기판 웨이퍼의 제조 방법 - Google Patents

GaN 기판 웨이퍼 및 GaN 기판 웨이퍼의 제조 방법 Download PDF

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KR20210144729A
KR20210144729A KR1020217031332A KR20217031332A KR20210144729A KR 20210144729 A KR20210144729 A KR 20210144729A KR 1020217031332 A KR1020217031332 A KR 1020217031332A KR 20217031332 A KR20217031332 A KR 20217031332A KR 20210144729 A KR20210144729 A KR 20210144729A
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gan
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wafer
substrate wafer
gan substrate
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겐지 이소
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미쯔비시 케미컬 주식회사
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020217031332A 2019-03-29 2020-03-25 GaN 기판 웨이퍼 및 GaN 기판 웨이퍼의 제조 방법 Ceased KR20210144729A (ko)

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Application Number Priority Date Filing Date Title
JP2019066016 2019-03-29
JPJP-P-2019-066016 2019-03-29
JPJP-P-2019-095873 2019-05-22
JP2019095873 2019-05-22
JP2019109206 2019-06-12
JPJP-P-2019-109206 2019-06-12
PCT/JP2020/013298 WO2020203541A1 (ja) 2019-03-29 2020-03-25 ＧａＮ基板ウエハおよびＧａＮ基板ウエハの製造方法

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US (1) US20220010455A1 (https=)
EP (1) EP3951025A4 (https=)
JP (1) JP7775708B2 (https=)
KR (1) KR20210144729A (https=)
CN (1) CN113692459B (https=)
TW (1) TWI849096B (https=)
WO (1) WO2020203541A1 (https=)

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KR20250006240A (ko) * 2022-04-27 2025-01-10 미쯔비시 케미컬 주식회사 n형 GaN 기판 및 n형 GaN 결정
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JP2007070154A (ja) 2005-09-06 2007-03-22 Hitachi Cable Ltd Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法
JP2007251178A (ja) 2006-03-17 2007-09-27 Samsung Electro Mech Co Ltd 窒化物半導体単結晶基板、その製造方法、及び、これを用いた垂直構造窒化物発光素子の製造方法

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CN113692459A (zh) 2021-11-23
US20220010455A1 (en) 2022-01-13
TW202104685A (zh) 2021-02-01
CN113692459B (zh) 2024-07-09
JP7775708B2 (ja) 2025-11-26
TWI849096B (zh) 2024-07-21
WO2020203541A1 (ja) 2020-10-08
JPWO2020203541A1 (https=) 2020-10-08
EP3951025A1 (en) 2022-02-09
EP3951025A4 (en) 2022-06-01

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