TWI849096B - GaN基板晶圓及GaN基板晶圓的製造方法 - Google Patents

GaN基板晶圓及GaN基板晶圓的製造方法 Download PDF

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TWI849096B
TWI849096B TW109110411A TW109110411A TWI849096B TW I849096 B TWI849096 B TW I849096B TW 109110411 A TW109110411 A TW 109110411A TW 109110411 A TW109110411 A TW 109110411A TW I849096 B TWI849096 B TW I849096B
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TW202104685A (zh
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磯憲司
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日商三菱化學股份有限公司
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    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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    • H10P14/2925—Surface structures
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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TW109110411A 2019-03-29 2020-03-27 GaN基板晶圓及GaN基板晶圓的製造方法 TWI849096B (zh)

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JP2019066016 2019-03-29
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JP2019-095873 2019-05-22
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JP2019109206 2019-06-12
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EP (1) EP3951025A4 (https=)
JP (1) JP7775708B2 (https=)
KR (1) KR20210144729A (https=)
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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
KR20250006240A (ko) * 2022-04-27 2025-01-10 미쯔비시 케미컬 주식회사 n형 GaN 기판 및 n형 GaN 결정
CN120380207A (zh) * 2022-12-21 2025-07-25 三菱化学株式会社 GaN衬底

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200949026A (en) * 2008-01-16 2009-12-01 Sumitomo Electric Industries Method for growing group iii nitride crystal
JP2015214441A (ja) * 2014-05-09 2015-12-03 古河機械金属株式会社 自立基板の製造方法および自立基板
US20160020284A1 (en) * 2014-07-21 2016-01-21 Soraa, Inc. Reusable nitride wafer, method of making, and use thereof
TW201900951A (zh) * 2017-03-17 2019-01-01 日商古河機械金屬股份有限公司 Iii族氮化物半導體基板
JP2019004047A (ja) * 2017-06-15 2019-01-10 株式会社サイオクス 窒化物半導体積層物、半導体装置、窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349338A (ja) * 1998-09-30 2000-12-15 Nec Corp ＧａＮ結晶膜、ＩＩＩ族元素窒化物半導体ウェーハ及びその製造方法
JP4442093B2 (ja) * 2002-12-24 2010-03-31 日亜化学工業株式会社 窒化物半導体積層用基板の製造方法
CN100453712C (zh) * 2003-08-28 2009-01-21 日立电线株式会社 Ⅲ-ⅴ族氮化物系半导体衬底及其制造方法
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
JP4518209B1 (ja) * 2009-09-07 2010-08-04 住友電気工業株式会社 Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
JP4529846B2 (ja) * 2005-09-06 2010-08-25 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法
KR100714629B1 (ko) 2006-03-17 2007-05-07 삼성전기주식회사 질화물 반도체 단결정 기판, 그 제조방법 및 이를 이용한수직구조 질화물 발광소자 제조방법
JP4714192B2 (ja) * 2007-07-27 2011-06-29 住友電気工業株式会社 窒化ガリウム結晶の成長方法、窒化ガリウム結晶基板、エピウエハの製造方法およびエピウエハ
US7727874B2 (en) * 2007-09-14 2010-06-01 Kyma Technologies, Inc. Non-polar and semi-polar GaN substrates, devices, and methods for making them
KR20110049843A (ko) * 2008-08-01 2011-05-12 일루미텍스, 인크. 광자 터널링 발광 다이오드 및 방법
JP5381581B2 (ja) * 2009-09-30 2014-01-08 住友電気工業株式会社 窒化ガリウム基板
JP2013155085A (ja) 2012-01-30 2013-08-15 Jx Nippon Mining & Metals Corp 窒化ガリウム系化合物半導体層の製造方法、発光デバイスの製造方法
KR20140029024A (ko) * 2012-08-31 2014-03-10 에스케이하이닉스 주식회사 매립 게이트형 무접합 반도체 소자와 그 반도체 소자를 갖는 모듈 및 시스템 그리고 그 반도체 소자의 제조 방법
JP2014072397A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
US8669168B1 (en) * 2013-01-09 2014-03-11 The United States Of America, As Represented By The Secretary Of The Navy Method for reducing the concentration of oxygen, carbon, and silicon impurities on nitrogen-polar surfaces of gallium nitride
EP2955253A4 (en) * 2013-02-08 2016-11-23 Namiki Precision Jewel Co Ltd GAN SUBSTRATE AND METHOD FOR PRODUCING THE GAN SUBSTRATE
JP2017024927A (ja) * 2015-07-17 2017-02-02 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板の製造方法
JP6548509B2 (ja) * 2015-08-10 2019-07-24 株式会社サイオクス １３族窒化物単結晶の製造方法、および１３族窒化物単結晶の製造装置
WO2018039236A1 (en) * 2016-08-22 2018-03-01 The Regents Of The University Of California Semiconductor heterostructure with reduced unintentional calcium impurity incorporation
US10461216B2 (en) * 2016-09-23 2019-10-29 Wright State University Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures
US10177247B2 (en) * 2017-01-20 2019-01-08 Qorvo Us, Inc. Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces
US10283358B2 (en) * 2017-05-18 2019-05-07 Hrl Laboratories, Llc Lateral GaN PN junction diode enabled by sidewall regrowth
JP6356315B1 (ja) * 2017-05-29 2018-07-11 株式会社サイオクス 窒化物結晶基板、半導体積層物、半導体積層物の製造方法および半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200949026A (en) * 2008-01-16 2009-12-01 Sumitomo Electric Industries Method for growing group iii nitride crystal
JP2015214441A (ja) * 2014-05-09 2015-12-03 古河機械金属株式会社 自立基板の製造方法および自立基板
US20160020284A1 (en) * 2014-07-21 2016-01-21 Soraa, Inc. Reusable nitride wafer, method of making, and use thereof
TW201900951A (zh) * 2017-03-17 2019-01-01 日商古河機械金屬股份有限公司 Iii族氮化物半導體基板
JP2019004047A (ja) * 2017-06-15 2019-01-10 株式会社サイオクス 窒化物半導体積層物、半導体装置、窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法

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US20220010455A1 (en) 2022-01-13
TW202104685A (zh) 2021-02-01
CN113692459B (zh) 2024-07-09
JP7775708B2 (ja) 2025-11-26
WO2020203541A1 (ja) 2020-10-08
JPWO2020203541A1 (https=) 2020-10-08
EP3951025A1 (en) 2022-02-09
KR20210144729A (ko) 2021-11-30
EP3951025A4 (en) 2022-06-01

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