KR20180042842A - 감광성 수지 조성물 - Google Patents

감광성 수지 조성물 Download PDF

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Publication number
KR20180042842A
KR20180042842A KR1020187003696A KR20187003696A KR20180042842A KR 20180042842 A KR20180042842 A KR 20180042842A KR 1020187003696 A KR1020187003696 A KR 1020187003696A KR 20187003696 A KR20187003696 A KR 20187003696A KR 20180042842 A KR20180042842 A KR 20180042842A
Authority
KR
South Korea
Prior art keywords
mass
photosensitive resin
resin composition
meth
compound
Prior art date
Application number
KR1020187003696A
Other languages
English (en)
Korean (ko)
Inventor
가즈야 나이토
유리 야마다
준야 고사카
Original Assignee
아사히 가세이 가부시키가이샤
아사히 가세이 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아사히 가세이 가부시키가이샤, 아사히 가세이 가부시키가이샤 filed Critical 아사히 가세이 가부시키가이샤
Priority to KR1020197026060A priority Critical patent/KR102443749B1/ko
Publication of KR20180042842A publication Critical patent/KR20180042842A/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/106—Esters of polycondensation macromers
    • C08F222/1063—Esters of polycondensation macromers of alcohol terminated polyethers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F285/00—Macromolecular compounds obtained by polymerising monomers on to preformed graft polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Polymerisation Methods In General (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020187003696A 2015-09-11 2016-09-07 감광성 수지 조성물 KR20180042842A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020197026060A KR102443749B1 (ko) 2015-09-11 2016-09-07 감광성 수지 조성물

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2015179888 2015-09-11
JPJP-P-2015-179888 2015-09-11
JP2015195984 2015-10-01
JPJP-P-2015-195984 2015-10-01
JP2015199434 2015-10-07
JPJP-P-2015-199434 2015-10-07
JPJP-P-2015-218912 2015-11-06
JP2015218912 2015-11-06
JPJP-P-2015-257519 2015-12-28
JP2015257519 2015-12-28
PCT/JP2016/076342 WO2017043544A1 (ja) 2015-09-11 2016-09-07 感光性樹脂組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020197026060A Division KR102443749B1 (ko) 2015-09-11 2016-09-07 감광성 수지 조성물

Publications (1)

Publication Number Publication Date
KR20180042842A true KR20180042842A (ko) 2018-04-26

Family

ID=58239851

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020227031231A KR102600211B1 (ko) 2015-09-11 2016-09-07 감광성 수지 조성물
KR1020187003696A KR20180042842A (ko) 2015-09-11 2016-09-07 감광성 수지 조성물
KR1020197026060A KR102443749B1 (ko) 2015-09-11 2016-09-07 감광성 수지 조성물

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020227031231A KR102600211B1 (ko) 2015-09-11 2016-09-07 감광성 수지 조성물

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020197026060A KR102443749B1 (ko) 2015-09-11 2016-09-07 감광성 수지 조성물

Country Status (6)

Country Link
JP (3) JP6514346B2 (zh)
KR (3) KR102600211B1 (zh)
CN (2) CN108027559B (zh)
MY (1) MY186932A (zh)
TW (3) TWI684067B (zh)
WO (1) WO2017043544A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6809873B2 (ja) * 2015-12-28 2021-01-06 旭化成株式会社 積層体
JP2019133143A (ja) * 2018-01-30 2019-08-08 旭化成株式会社 感光性樹脂積層体及びレジストパターンの製造方法
CN108205240B (zh) * 2018-02-01 2021-05-07 浙江福斯特新材料研究院有限公司 一种高光敏性和优异掩孔性能的感光性树脂组合物及应用
CN118778362A (zh) * 2018-06-22 2024-10-15 旭化成株式会社 感光性树脂组合物和抗蚀图案的形成方法
CN112534351A (zh) * 2018-08-09 2021-03-19 旭化成株式会社 感光性树脂组合物及抗蚀图案的形成方法
JP2020076945A (ja) * 2018-09-21 2020-05-21 旭化成株式会社 感光性樹脂組成物
JP2022000683A (ja) * 2019-12-13 2022-01-04 旭化成株式会社 感光性樹脂組成物、感光性樹脂組成物を用いた転写フィルム
JPWO2021220980A1 (zh) * 2020-04-28 2021-11-04
JP2020190735A (ja) * 2020-07-14 2020-11-26 旭化成株式会社 感光性樹脂組成物、感光性樹脂積層体、レジストパターン形成方法及び導体パターン製造方法

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JP4646759B2 (ja) * 2005-09-20 2011-03-09 旭化成イーマテリアルズ株式会社 パターン形成材料、並びにパターン形成装置及びパターン形成方法
JP2007226158A (ja) * 2006-02-27 2007-09-06 Asahi Kasei Electronics Co Ltd ドライフィルムレジスト
CN101568883B (zh) * 2006-12-27 2012-01-18 日立化成工业株式会社 感光性树脂组合物、感光性元件、抗蚀图案的形成方法以及印刷电路板的制造方法
JP2008197160A (ja) * 2007-02-08 2008-08-28 Hitachi Chem Co Ltd 半導体素子の層間絶縁膜用感光性樹脂組成物、それを用いた層間絶縁膜及び層間絶縁膜の製造方法
CN101779165B (zh) 2007-08-15 2014-09-24 旭化成电子材料株式会社 感光性树脂组合物及其层压体
JP2011233769A (ja) 2010-04-28 2011-11-17 Mec Co Ltd 銅配線パターンの形成方法
CN102331684A (zh) * 2010-07-13 2012-01-25 日立化成工业株式会社 感光性元件、抗蚀图案的形成方法、印刷电路布线板的制造方法及印刷电路布线板
KR101444044B1 (ko) * 2010-12-16 2014-09-23 히타치가세이가부시끼가이샤 감광성 엘리먼트, 레지스트 패턴의 형성 방법 및 프린트 배선판의 제조 방법
KR102019580B1 (ko) * 2010-12-24 2019-09-06 아사히 가세이 이-매터리얼즈 가부시키가이샤 감광성 수지 조성물
JP2012226254A (ja) 2011-04-22 2012-11-15 Asahi Kasei E-Materials Corp ドライフィルムレジストロール
JP6064480B2 (ja) 2011-10-26 2017-01-25 日立化成株式会社 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
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WO2015098870A1 (ja) 2013-12-27 2015-07-02 日立化成株式会社 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP2015152854A (ja) * 2014-02-18 2015-08-24 旭化成イーマテリアルズ株式会社 感光性樹脂組成物、感光性樹脂積層体及びレジストパターン形成方法
KR101922354B1 (ko) 2014-09-24 2018-11-26 아사히 가세이 가부시키가이샤 감광성 수지 조성물, 감광성 수지 적층체, 수지 패턴의 제조 방법, 경화막 및 표시 장치
US20180051183A1 (en) * 2016-08-17 2018-02-22 Xerox Corporation Seven-color ink set for a digital advanced lithographic imaging process

Also Published As

Publication number Publication date
JPWO2017043544A1 (ja) 2018-03-15
TW201843527A (zh) 2018-12-16
JP7340581B2 (ja) 2023-09-07
KR20190105142A (ko) 2019-09-11
JP7026606B2 (ja) 2022-02-28
TWI684067B (zh) 2020-02-01
KR102600211B1 (ko) 2023-11-08
JP2019105841A (ja) 2019-06-27
TW201712433A (zh) 2017-04-01
CN114296315A (zh) 2022-04-08
CN108027559A (zh) 2018-05-11
TWI691793B (zh) 2020-04-21
JP6514346B2 (ja) 2019-05-15
TW201944171A (zh) 2019-11-16
CN108027559B (zh) 2021-10-26
KR102443749B1 (ko) 2022-09-15
WO2017043544A1 (ja) 2017-03-16
KR20220127382A (ko) 2022-09-19
MY186932A (en) 2021-08-26
JP2022027767A (ja) 2022-02-14
TWI709815B (zh) 2020-11-11

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