KR20180031083A - 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법 - Google Patents

액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법 Download PDF

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Publication number
KR20180031083A
KR20180031083A KR1020187007817A KR20187007817A KR20180031083A KR 20180031083 A KR20180031083 A KR 20180031083A KR 1020187007817 A KR1020187007817 A KR 1020187007817A KR 20187007817 A KR20187007817 A KR 20187007817A KR 20180031083 A KR20180031083 A KR 20180031083A
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KR
South Korea
Prior art keywords
substrate
optical assembly
immersion liquid
space
insertion member
Prior art date
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Ceased
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KR1020187007817A
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English (en)
Korean (ko)
Inventor
알렉스 카 팀 푼
레오나드 와이 풍 코
가우라브 케스와니
데렉 쿤
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20180031083A publication Critical patent/KR20180031083A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020187007817A 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법 Ceased KR20180031083A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US91805707P 2007-03-15 2007-03-15
US60/918,057 2007-03-15
US11/976,898 2007-08-29
US11/976,898 US8237911B2 (en) 2007-03-15 2007-10-29 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
PCT/US2008/003224 WO2008115372A1 (en) 2007-03-15 2008-03-12 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020157036015A Division KR20160003326A (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법

Publications (1)

Publication Number Publication Date
KR20180031083A true KR20180031083A (ko) 2018-03-27

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Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020187007817A Ceased KR20180031083A (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법
KR1020147027490A Expired - Fee Related KR101580467B1 (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법
KR1020157036015A Ceased KR20160003326A (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법
KR1020097021477A Expired - Fee Related KR101515649B1 (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020147027490A Expired - Fee Related KR101580467B1 (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법
KR1020157036015A Ceased KR20160003326A (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법
KR1020097021477A Expired - Fee Related KR101515649B1 (ko) 2007-03-15 2008-03-12 액침 리소그래피 머신 내에서 웨이퍼 교환 동안 광학 어셈블리에 인접하게 액침 유체를 유지하기 위한 장치 및 방법

Country Status (5)

Country Link
US (4) US8237911B2 (enExample)
JP (4) JP5282255B2 (enExample)
KR (4) KR20180031083A (enExample)
TW (2) TWI440985B (enExample)
WO (1) WO2008115372A1 (enExample)

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US20140232999A1 (en) 2014-08-21
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US20130141702A1 (en) 2013-06-06
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US9217933B2 (en) 2015-12-22
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US20080225246A1 (en) 2008-09-18
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JP5510600B2 (ja) 2014-06-04
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