JP5282255B2 - 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 - Google Patents

液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 Download PDF

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Publication number
JP5282255B2
JP5282255B2 JP2009553605A JP2009553605A JP5282255B2 JP 5282255 B2 JP5282255 B2 JP 5282255B2 JP 2009553605 A JP2009553605 A JP 2009553605A JP 2009553605 A JP2009553605 A JP 2009553605A JP 5282255 B2 JP5282255 B2 JP 5282255B2
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Prior art keywords
optical assembly
insertion member
substrate
immersion liquid
wafer
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Expired - Fee Related
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JP2009553605A
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Japanese (ja)
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JP2010521814A (ja
JP2010521814A5 (enExample
Inventor
カー ティム プーン アレックス
ワイ ファング コー レオナルド
ケスワニ ガウラブ
クーン デレク
大士 田中
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Nikon Corp
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Nikon Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2009553605A 2007-03-15 2008-03-12 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 Expired - Fee Related JP5282255B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US91805707P 2007-03-15 2007-03-15
US60/918,057 2007-03-15
US11/976,898 2007-10-29
US11/976,898 US8237911B2 (en) 2007-03-15 2007-10-29 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
PCT/US2008/003224 WO2008115372A1 (en) 2007-03-15 2008-03-12 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013032858A Division JP5327768B2 (ja) 2007-03-15 2013-02-22 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法

Publications (3)

Publication Number Publication Date
JP2010521814A JP2010521814A (ja) 2010-06-24
JP2010521814A5 JP2010521814A5 (enExample) 2011-06-16
JP5282255B2 true JP5282255B2 (ja) 2013-09-04

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JP2009553605A Expired - Fee Related JP5282255B2 (ja) 2007-03-15 2008-03-12 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法
JP2013032858A Expired - Fee Related JP5327768B2 (ja) 2007-03-15 2013-02-22 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法
JP2013139931A Active JP5510600B2 (ja) 2007-03-15 2013-07-03 リソグラフィック投影装置及び液浸露光方法
JP2014065131A Active JP5725227B2 (ja) 2007-03-15 2014-03-27 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法

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JP2013032858A Expired - Fee Related JP5327768B2 (ja) 2007-03-15 2013-02-22 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法
JP2013139931A Active JP5510600B2 (ja) 2007-03-15 2013-07-03 リソグラフィック投影装置及び液浸露光方法
JP2014065131A Active JP5725227B2 (ja) 2007-03-15 2014-03-27 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法

Country Status (5)

Country Link
US (4) US8237911B2 (enExample)
JP (4) JP5282255B2 (enExample)
KR (4) KR101515649B1 (enExample)
TW (2) TWI440985B (enExample)
WO (1) WO2008115372A1 (enExample)

Cited By (1)

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JP2014168068A (ja) * 2007-03-15 2014-09-11 Nikon Corp 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法

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