JP5282255B2 - 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 - Google Patents

液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 Download PDF

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Publication number
JP5282255B2
JP5282255B2 JP2009553605A JP2009553605A JP5282255B2 JP 5282255 B2 JP5282255 B2 JP 5282255B2 JP 2009553605 A JP2009553605 A JP 2009553605A JP 2009553605 A JP2009553605 A JP 2009553605A JP 5282255 B2 JP5282255 B2 JP 5282255B2
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Prior art keywords
optical assembly
insertion member
substrate
immersion liquid
wafer
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Expired - Fee Related
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Japanese (ja)
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JP2010521814A5 (enExample
JP2010521814A (ja
Inventor
カー ティム プーン アレックス
ワイ ファング コー レオナルド
ケスワニ ガウラブ
クーン デレク
大士 田中
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Nikon Corp
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Nikon Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
JP2009553605A 2007-03-15 2008-03-12 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 Expired - Fee Related JP5282255B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US91805707P 2007-03-15 2007-03-15
US60/918,057 2007-03-15
US11/976,898 2007-10-29
US11/976,898 US8237911B2 (en) 2007-03-15 2007-10-29 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
PCT/US2008/003224 WO2008115372A1 (en) 2007-03-15 2008-03-12 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine

Related Child Applications (1)

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JP2013032858A Division JP5327768B2 (ja) 2007-03-15 2013-02-22 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法

Publications (3)

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JP2010521814A JP2010521814A (ja) 2010-06-24
JP2010521814A5 JP2010521814A5 (enExample) 2011-06-16
JP5282255B2 true JP5282255B2 (ja) 2013-09-04

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JP2009553605A Expired - Fee Related JP5282255B2 (ja) 2007-03-15 2008-03-12 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法
JP2013032858A Expired - Fee Related JP5327768B2 (ja) 2007-03-15 2013-02-22 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法
JP2013139931A Active JP5510600B2 (ja) 2007-03-15 2013-07-03 リソグラフィック投影装置及び液浸露光方法
JP2014065131A Active JP5725227B2 (ja) 2007-03-15 2014-03-27 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法

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JP2013032858A Expired - Fee Related JP5327768B2 (ja) 2007-03-15 2013-02-22 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法
JP2013139931A Active JP5510600B2 (ja) 2007-03-15 2013-07-03 リソグラフィック投影装置及び液浸露光方法
JP2014065131A Active JP5725227B2 (ja) 2007-03-15 2014-03-27 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法

Country Status (5)

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US (4) US8237911B2 (enExample)
JP (4) JP5282255B2 (enExample)
KR (4) KR101515649B1 (enExample)
TW (2) TWI440985B (enExample)
WO (1) WO2008115372A1 (enExample)

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JP2014168068A (ja) * 2007-03-15 2014-09-11 Nikon Corp 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法

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