JP5510600B2 - リソグラフィック投影装置及び液浸露光方法 - Google Patents
リソグラフィック投影装置及び液浸露光方法 Download PDFInfo
- Publication number
- JP5510600B2 JP5510600B2 JP2013139931A JP2013139931A JP5510600B2 JP 5510600 B2 JP5510600 B2 JP 5510600B2 JP 2013139931 A JP2013139931 A JP 2013139931A JP 2013139931 A JP2013139931 A JP 2013139931A JP 5510600 B2 JP5510600 B2 JP 5510600B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- wafer
- movable member
- optical assembly
- movable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
Description
別の態様によれば、液浸リソグラフィック投影装置は、最終光学素子を有する投影光学アセンブリと、基板を支持する基板テーブルと、露光光線の経路の一部を取り囲む閉じ込め部材と、前記閉じ込め部材と前記基板及び前記基板テーブルの少なくとも一方との間で移動可能な可動部材とを備える。前記基板テーブルに支持された前記基板は前記投影光学アセンブリの前記最終光学素子からの露光光線によって露光され、前記可動部材は、前記閉じ込め部材と前記可動部材との間の第1空間と、前記可動部材と前記基板及び前記基板テーブルの少なくとも一方との間の第2空間のうちの、前記第2空間から液浸液を回収する回収口を有する。
さらに別の態様によれば、基板テーブルによって基板を支持しながら、前記基板を投影光学アセンブリの最終光学素子からの露光光線によって露光する液浸露光方法は、露光光線の経路の一部を取り囲む閉じ込め部材と前記基板及び前記基板テーブルの少なくとも一方との間で可動部材を動かすことと、前記閉じ込め部材と前記可動部材との間の第1空間と、前記可動部材と前記基板及び前記基板テーブルの少なくとも一方との間の第2空間のうちの前記第2空間から、前記可動部材に設けられた回収口を用いて液浸液を除去することとを含む。
Claims (29)
- 液浸リソグラフィック投影装置であって、
最終光学素子を有する投影光学アセンブリと、
基板を支持する基板テーブルと、
露光光線の経路の一部を取り囲む閉じ込め部材と、
前記閉じ込め部材と前記基板及び前記基板テーブルの少なくとも一方との間で移動可能な可動部材とを備え、
前記基板テーブルに支持された前記基板は前記投影光学アセンブリの前記最終光学素子からの露光光線によって露光され、
前記可動部材は、前記閉じ込め部材と前記可動部材との間の第1空間と、前記可動部材と前記基板及び前記基板テーブルの少なくとも一方との間の第2空間のうちの、前記第2空間から液浸液を回収する回収口を有するリソグラフィック投影装置。 - 前記閉じ込め部材は液浸液を閉じ込めて前記基板の上面の面積よりも小さい局所領域を覆う請求項1に記載のリソグラフィック投影装置。
- 前記閉じ込め部材は前記投影光学アセンブリの前記最終光学素子を取り囲む請求項1又は2に記載のリソグラフィック投影装置。
- 前記可動部材の前記閉じ込め部材に面している面は親液性である請求項1から3のいずれか一項に記載のリソグラフィック投影装置。
- 前記可動部材の下面はフッ素材料を含む請求項1から4のいずれか一項に記載のリソグラフィック投影装置。
- 前記可動部材の下面は液浸液に対して撥液性である請求項1から5のいずれか一項に記載のリソグラフィック投影装置。
- 前記可動部材は50μm〜5mmの厚さを有する請求項1から6のいずれか一項に記載のリソグラフィック投影装置。
- 前記可動部材は50μm〜200μmの厚さを有する請求項1から6のいずれか一項に記載のリソグラフィック投影装置。
- 前記閉じ込め部材は、液浸液を回収する液体回収部を有する請求項1から8のいずれか一項に記載のリソグラフィック投影装置。
- 前記閉じ込め部材は多孔部材を有し、前記多孔部材を通して液浸液を回収する請求項1から9のいずれか一項に記載のリソグラフィック投影装置。
- 前記閉じ込め部材は液浸液を供給する請求項1から10のいずれか一項に記載のリソグラフィック投影装置。
- 前記回収口は前記可動部材の下面に設けられている請求項1から11のいずれか一項に記載のリソグラフィック投影装置。
- 前記可動部材は、前記投影光学アセンブリの光軸方向に交差する方向に移動可能な請求項1から12のいずれか一項に記載のリソグラフィック投影装置。
- 前記可動部材は、前記投影光学アセンブリの光軸方向位置及び傾きの少なくとも一方を調整可能である請求項1から13のいずれか一項に記載のリソグラフィック投影装置。
- 前記可動部材は、6自由度に移動可能である請求項1から14のいずれか一項に記載のリソグラフィック投影装置。
- 請求項1から15のいずれか一項に記載の装置を用いて基板を露光することと、
前記露光された基板を現像することとを含む露光方法。 - 基板テーブルによって基板を支持しながら、前記基板を投影光学アセンブリの最終光学素子からの露光光線によって露光する液浸露光方法であって、
露光光線の経路の一部を取り囲む閉じ込め部材と前記基板及び前記基板テーブルの少なくとも一方との間で可動部材を動かすことと、
前記閉じ込め部材と前記可動部材との間の第1空間と、前記可動部材と前記基板及び前記基板テーブルの少なくとも一方との間の第2空間のうちの前記第2空間から、前記可動部材に設けられた回収口を用いて液浸液を除去することとを含む液浸露光方法。 - 前記閉じ込め部材は液浸液を閉じ込めて前記基板の上面の面積よりも小さい局所領域を覆う請求項17に記載の方法。
- 前記閉じ込め部材は前記投影光学アセンブリの前記最終光学素子を取り囲む請求項17又は18に記載の方法。
- 前記可動部材の前記閉じ込め部材に面している面は親液性である請求項17から19のいずれか一項に記載の方法。
- 前記可動部材の底面はフッ素材料を含む請求項17から20のいずれか一項に記載の方法。
- 前記可動部材の底面は液浸液に対して撥液性である請求項17から21のいずれか一項に記載の方法。
- 前記閉じ込め部材は、液浸液を回収する液体回収部を有する請求項17から22のいずれか一項に記載の方法。
- 前記閉じ込め部材は多孔部材を有し、前記多孔部材を通して液浸液を回収する請求項17から23のいずれか一項に記載の方法。
- 前記閉じ込め部材は液浸液を供給する請求項17から24のいずれか一項に記載の方法。
- 前記回収口は前記可動部材の下面に設けられている請求項17から25のいずれか一項に記載の方法。
- 前記可動部材は、前記投影光学アセンブリの光軸方向に交差する方向に移動可能な請求項17から26のいずれか一項に記載の方法。
- 前記可動部材は、前記投影光学アセンブリの光軸方向位置及び傾きの少なくとも一方を調整可能である請求項17から27のいずれか一項に記載の方法。
- 前記可動部材は、6自由度に移動可能である請求項17から28のいずれか一項に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91805707P | 2007-03-15 | 2007-03-15 | |
US60/918,057 | 2007-03-15 | ||
US11/976,898 | 2007-08-29 | ||
US11/976,898 US8237911B2 (en) | 2007-03-15 | 2007-10-29 | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013032858A Division JP5327768B2 (ja) | 2007-03-15 | 2013-02-22 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014065131A Division JP5725227B2 (ja) | 2007-03-15 | 2014-03-27 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013225693A JP2013225693A (ja) | 2013-10-31 |
JP5510600B2 true JP5510600B2 (ja) | 2014-06-04 |
Family
ID=39762312
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009553605A Expired - Fee Related JP5282255B2 (ja) | 2007-03-15 | 2008-03-12 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
JP2013032858A Expired - Fee Related JP5327768B2 (ja) | 2007-03-15 | 2013-02-22 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
JP2013139931A Active JP5510600B2 (ja) | 2007-03-15 | 2013-07-03 | リソグラフィック投影装置及び液浸露光方法 |
JP2014065131A Active JP5725227B2 (ja) | 2007-03-15 | 2014-03-27 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009553605A Expired - Fee Related JP5282255B2 (ja) | 2007-03-15 | 2008-03-12 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
JP2013032858A Expired - Fee Related JP5327768B2 (ja) | 2007-03-15 | 2013-02-22 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014065131A Active JP5725227B2 (ja) | 2007-03-15 | 2014-03-27 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
Country Status (5)
Country | Link |
---|---|
US (4) | US8237911B2 (ja) |
JP (4) | JP5282255B2 (ja) |
KR (4) | KR20160003326A (ja) |
TW (2) | TWI545407B (ja) |
WO (1) | WO2008115372A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014168068A (ja) * | 2007-03-15 | 2014-09-11 | Nikon Corp | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009076520A (ja) * | 2007-09-19 | 2009-04-09 | Canon Inc | 露光装置 |
US8451425B2 (en) * | 2007-12-28 | 2013-05-28 | Nikon Corporation | Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method |
US8610873B2 (en) | 2008-03-17 | 2013-12-17 | Nikon Corporation | Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate |
US8289497B2 (en) * | 2008-03-18 | 2012-10-16 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
EP2523210A1 (en) | 2010-01-08 | 2012-11-14 | Nikon Corporation | Liquid-immersion member, exposing device, exposing method, and device manufacturing method |
US9323160B2 (en) | 2012-04-10 | 2016-04-26 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
US9268231B2 (en) | 2012-04-10 | 2016-02-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
US9823580B2 (en) | 2012-07-20 | 2017-11-21 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
US9494870B2 (en) | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
US9568828B2 (en) | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
US9720331B2 (en) | 2012-12-27 | 2017-08-01 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
WO2015052781A1 (ja) * | 2013-10-08 | 2015-04-16 | 株式会社ニコン | 液浸部材、露光装置及び露光方法、並びにデバイス製造方法 |
CN104570613B (zh) * | 2013-10-25 | 2018-01-19 | 上海微电子装备(集团)股份有限公司 | 浸没头、浸没流场初始化和维持方法及光刻设备 |
TWI606529B (zh) * | 2016-11-02 | 2017-11-21 | Lens housing assembly for wafer inspection equipment | |
JP6610726B2 (ja) * | 2018-07-11 | 2019-11-27 | 株式会社ニコン | 液浸部材、露光装置及び露光方法、並びにデバイス製造方法 |
Family Cites Families (147)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS62121417A (ja) * | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
US5469963A (en) * | 1992-04-08 | 1995-11-28 | Asyst Technologies, Inc. | Sealable transportable container having improved liner |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP3747958B2 (ja) * | 1995-04-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
JP3212199B2 (ja) * | 1993-10-04 | 2001-09-25 | 旭硝子株式会社 | 平板型陰極線管 |
US5528118A (en) * | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5874820A (en) * | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US5623853A (en) * | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JPH08171054A (ja) * | 1994-12-16 | 1996-07-02 | Nikon Corp | 反射屈折光学系 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH1020195A (ja) * | 1996-06-28 | 1998-01-23 | Nikon Corp | 反射屈折光学系 |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
SG102627A1 (en) * | 1996-11-28 | 2004-03-26 | Nikon Corp | Lithographic device |
DE69829614T2 (de) * | 1997-03-10 | 2006-03-09 | Asml Netherlands B.V. | Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern |
AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
KR20020006670A (ko) * | 1999-03-12 | 2002-01-24 | 시마무라 테루오 | 노광장치 및 노광방법, 그리고 디바이스 제조방법 |
JP4365934B2 (ja) * | 1999-05-10 | 2009-11-18 | キヤノン株式会社 | 露光装置、半導体製造装置およびデバイス製造方法 |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
JPWO2003085708A1 (ja) * | 2002-04-09 | 2005-08-18 | 株式会社ニコン | 露光方法及び露光装置、並びにデバイス製造方法 |
TWI242691B (en) | 2002-08-23 | 2005-11-01 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100568101C (zh) * | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
KR100585476B1 (ko) * | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
CN101349876B (zh) * | 2002-11-12 | 2010-12-01 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1420298B1 (en) * | 2002-11-12 | 2013-02-20 | ASML Netherlands B.V. | Lithographic apparatus |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
WO2004053955A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
JP4232449B2 (ja) * | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
DE60326384D1 (de) | 2002-12-13 | 2009-04-09 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
WO2004057590A1 (en) | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US7514699B2 (en) | 2002-12-19 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
TWI247339B (en) * | 2003-02-21 | 2006-01-11 | Asml Holding Nv | Lithographic printing with polarized light |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
KR20110104084A (ko) * | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
EP2950148B1 (en) | 2003-04-10 | 2016-09-21 | Nikon Corporation | Environmental system including vaccum scavenge for an immersion lithography apparatus |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
KR101129213B1 (ko) | 2003-04-10 | 2012-03-27 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 액체를 수집하는 런-오프 경로 |
KR101431938B1 (ko) * | 2003-04-10 | 2014-08-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
SG139736A1 (en) * | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
SG2013077797A (en) | 2003-04-11 | 2017-02-27 | Nippon Kogaku Kk | Cleanup method for optics in immersion lithography |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
EP1614000B1 (en) | 2003-04-17 | 2012-01-18 | Nikon Corporation | Immersion lithographic apparatus |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
TWI503865B (zh) | 2003-05-23 | 2015-10-11 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
KR101265450B1 (ko) * | 2003-06-19 | 2013-05-16 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7061578B2 (en) * | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
CN101430508B (zh) | 2003-09-03 | 2011-08-10 | 株式会社尼康 | 为浸没光刻提供流体的装置和方法 |
JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
JP4524601B2 (ja) | 2003-10-09 | 2010-08-18 | 株式会社ニコン | 露光装置及び露光方法、デバイス製造方法 |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
WO2005050324A2 (en) | 2003-11-05 | 2005-06-02 | Dsm Ip Assets B.V. | A method and apparatus for producing microchips |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005054953A2 (en) | 2003-11-24 | 2005-06-16 | Carl-Zeiss Smt Ag | Holding device for an optical element in an objective |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
JP2005175176A (ja) | 2003-12-11 | 2005-06-30 | Nikon Corp | 露光方法及びデバイス製造方法 |
US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
EP1697798A2 (en) | 2003-12-15 | 2006-09-06 | Carl Zeiss SMT AG | Projection objective having a high aperture and a planar end surface |
WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
KR101407204B1 (ko) * | 2004-01-14 | 2014-06-13 | 칼 짜이스 에스엠티 게엠베하 | 투영 대물렌즈 |
KR101165862B1 (ko) | 2004-01-16 | 2012-07-17 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
EP1706793B1 (en) | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Exposure apparatus and measuring device for a projection lens |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
US8852850B2 (en) | 2004-02-03 | 2014-10-07 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007522508A (ja) | 2004-02-13 | 2007-08-09 | カール・ツアイス・エスエムテイ・アーゲー | マイクロリソグラフィック投影露光装置のための投影対物レンズ |
CN1922528A (zh) | 2004-02-18 | 2007-02-28 | 康宁股份有限公司 | 用于具有深紫外光的高数值孔径成象的反折射成象系统 |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) * | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP5130609B2 (ja) * | 2004-06-10 | 2013-01-30 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
US7119876B2 (en) * | 2004-10-18 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7583357B2 (en) * | 2004-11-12 | 2009-09-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2006062065A1 (ja) * | 2004-12-06 | 2006-06-15 | Nikon Corporation | メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法 |
US7403261B2 (en) * | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) * | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006237291A (ja) * | 2005-02-25 | 2006-09-07 | Canon Inc | 露光装置 |
US7751026B2 (en) * | 2005-08-25 | 2010-07-06 | Nikon Corporation | Apparatus and method for recovering fluid for immersion lithography |
JP4567651B2 (ja) * | 2005-11-16 | 2010-10-20 | エーエスエムエル ネザーランズ ビー.ブイ. | 露光装置及びデバイス製造方法 |
US7804577B2 (en) * | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7760324B2 (en) * | 2006-03-20 | 2010-07-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8237911B2 (en) * | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US8068209B2 (en) | 2007-03-23 | 2011-11-29 | Nikon Corporation | Nozzle to help reduce the escape of immersion liquid from an immersion lithography tool |
US8134685B2 (en) * | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US8451425B2 (en) * | 2007-12-28 | 2013-05-28 | Nikon Corporation | Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method |
US8610873B2 (en) * | 2008-03-17 | 2013-12-17 | Nikon Corporation | Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate |
-
2007
- 2007-10-29 US US11/976,898 patent/US8237911B2/en not_active Expired - Fee Related
-
2008
- 2008-03-12 JP JP2009553605A patent/JP5282255B2/ja not_active Expired - Fee Related
- 2008-03-12 KR KR1020157036015A patent/KR20160003326A/ko active Search and Examination
- 2008-03-12 KR KR1020147027490A patent/KR101580467B1/ko active IP Right Grant
- 2008-03-12 WO PCT/US2008/003224 patent/WO2008115372A1/en active Application Filing
- 2008-03-12 KR KR1020187007817A patent/KR20180031083A/ko not_active Application Discontinuation
- 2008-03-12 KR KR1020097021477A patent/KR101515649B1/ko active IP Right Grant
- 2008-03-14 TW TW103117596A patent/TWI545407B/zh not_active IP Right Cessation
- 2008-03-14 TW TW097109085A patent/TWI440985B/zh not_active IP Right Cessation
-
2012
- 2012-06-25 US US13/532,195 patent/US8400610B2/en not_active Expired - Fee Related
-
2013
- 2013-01-30 US US13/754,111 patent/US8743343B2/en not_active Expired - Fee Related
- 2013-02-22 JP JP2013032858A patent/JP5327768B2/ja not_active Expired - Fee Related
- 2013-07-03 JP JP2013139931A patent/JP5510600B2/ja active Active
-
2014
- 2014-03-27 JP JP2014065131A patent/JP5725227B2/ja active Active
- 2014-04-25 US US14/262,058 patent/US9217933B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014168068A (ja) * | 2007-03-15 | 2014-09-11 | Nikon Corp | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2014168068A (ja) | 2014-09-11 |
JP5327768B2 (ja) | 2013-10-30 |
US20140232999A1 (en) | 2014-08-21 |
JP2013123079A (ja) | 2013-06-20 |
JP2010521814A (ja) | 2010-06-24 |
TW201437769A (zh) | 2014-10-01 |
WO2008115372A1 (en) | 2008-09-25 |
US9217933B2 (en) | 2015-12-22 |
TWI545407B (zh) | 2016-08-11 |
US20120262687A1 (en) | 2012-10-18 |
KR20140124867A (ko) | 2014-10-27 |
KR101515649B1 (ko) | 2015-04-27 |
KR20100015585A (ko) | 2010-02-12 |
JP5725227B2 (ja) | 2015-05-27 |
KR20180031083A (ko) | 2018-03-27 |
US20080225246A1 (en) | 2008-09-18 |
TW200907586A (en) | 2009-02-16 |
TWI440985B (zh) | 2014-06-11 |
JP2013225693A (ja) | 2013-10-31 |
JP5282255B2 (ja) | 2013-09-04 |
US8237911B2 (en) | 2012-08-07 |
WO2008115372A8 (en) | 2010-05-06 |
US8400610B2 (en) | 2013-03-19 |
KR20160003326A (ko) | 2016-01-08 |
US20130141702A1 (en) | 2013-06-06 |
US8743343B2 (en) | 2014-06-03 |
KR101580467B1 (ko) | 2015-12-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5725227B2 (ja) | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 | |
JP6090486B2 (ja) | 液浸リソグラフィ装置、デバイス製造方法 | |
US20080225248A1 (en) | Apparatus, systems and methods for removing liquid from workpiece during workpiece processing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130802 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130802 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140214 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140225 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140310 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5510600 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |