JP5282255B2 - 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 - Google Patents
液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 Download PDFInfo
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- JP5282255B2 JP5282255B2 JP2009553605A JP2009553605A JP5282255B2 JP 5282255 B2 JP5282255 B2 JP 5282255B2 JP 2009553605 A JP2009553605 A JP 2009553605A JP 2009553605 A JP2009553605 A JP 2009553605A JP 5282255 B2 JP5282255 B2 JP 5282255B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (24)
- 光学アセンブリと、
前記光学アセンブリと、前記光学アセンブリに対して移動する物体との間の空間に液浸液体を供給する液浸部材と、
前記液浸液体と接触可能な第一面を具備し、前記光学アセンブリと前記物体との間に供給された前記液浸液体に対して挿入される挿入部材と、を備え、
前記液浸液体中に挿入された前記挿入部材は、前記光学アセンブリと前記第一面との間で前記液浸液体を維持するリソグラフィック投影装置。 - 前記挿入部材を、前記光学アセンブリと前記物体との間の前記空間に対して挿入し、又は前記挿入部材を当該空間から外へ移動する制御系を備え、
前記制御系は、前記光学アセンブリと前記物体との間に前記液浸液体が維持されているときは、前記挿入部材を前記物体及び前記光学アセンブリと分離して離れた位置に退避させる請求項1に記載の装置。 - 前記物体は、基板、前記基板を載置する基板テーブル、又は前記基板及び前記基板テーブルの両方を含み、
前記基板又は前記基板テーブルが前記光学アセンブリ下の位置から離れる際に、前記基板又は前記基板テーブルと前記光学アセンブリとの間に前記挿入部材が挿入されて前記第一面と前記光学アセンブリとの間に前記液浸液体が維持される請求項1又は2に記載のリソグラフィック投影装置。 - 前記挿入部材のうち前記光学アセンブリと対向する面には、前記液浸液体に対する親液処理又は撥液処理がなされている請求項1〜3のいずれか一項に記載のリソグラフィック投影装置。
- 前記挿入部材のうち前記物体と対向する面には、前記液浸液体に対する撥液処理がなされている請求項1〜4のいずれか一項に記載のリソグラフィック投影装置。
- 前記液浸部材によって維持される前記液浸液体は、前記基板の露光中に、前記基板表面の局所的な領域を覆う請求項1〜5のいずれか一項に記載のリソグラフィック投影装置。
- 前記制御系を含む環境システムを備え、
前記環境システムは、前記基板が前記光学アセンブリから離れて移動するときに、前記挿入部材と、前記物体との間に存在する液浸液体を除去する除去部材をさらに備える請求項1〜6のいずれか一項に記載のリソグラフィック投影装置。 - 前記基板テーブルを含む第1ステージアセンブリと、
前記基板と異なる第2基板を支持する第2基板テーブルを含む第2ステージアセンブリと、
前記第1ステージアセンブリ及び前記第2ステージアセンブリの移動を制御して、前記第1ステージアセンブリ及び前記第2ステージアセンブリを、交互に、前記光学アセンブリ下に位置付けする制御系と、をさらに備える請求項3に記載のリソグラフィック投影装置。 - 前記第1ステージアセンブリ又は前記第2ステージアセンブリのうちの一方に支持される前記基板テーブルが前記光学アセンブリの下に位置する第1状態から、他方に支持される前記基板テーブルが前記光学アセンブリの下に位置する第2状態に移行する間、前記挿入部材を用いて、前記液浸液体を前記光学アセンブリの下に維持する請求項8に記載のリソグラフィック投影装置。
- 前記液浸部材に形成された回収口より前記物体と前記挿入部材との間に存在する液浸液体を回収する請求項1〜9のいずれか一項に記載のリソグラフィック投影装置。
- 前記基板テーブルに形成された回収口より前記物体と前記挿入部材との間に存在する液浸液体を回収する請求項3、8及び9のいずれか一項に記載のリソグラフィック投影装置。
- 前記挿入部材に形成された回収口より前記物体と前記挿入部材との間に存在する液浸液体を回収する請求項1〜11のいずれか一項に記載のリソグラフィック投影装置。
- 前記物体が前記光学アセンブリ下から離れる前に、前記物体と前記挿入部材との間に存在する液浸液体を除去する請求項1〜12のいずれか一項に記載のリソグラフィック投影装置。
- 光学アセンブリと前記光学アセンブリと対向する物体との間の空間に液浸液体を供給すること、
第一面を具備する挿入部材を前記光学アセンブリと前記物体との間の空間内に挿入して前記光学アセンブリと前記挿入部材の前記第一面との間で前記液浸液体を維持すること、
前記光学アセンブリ及び前記液浸液体を介して基板を露光すること、を含むデバイス製造方法。 - 前記物体と前記挿入部材との間に存在する液浸液体を除去することをさらに含む請求項14に記載のデバイス製造方法。
- 前記物体と前記挿入部材との間に存在する前記液浸液体を除去した後に、前記基板を新たな第2基板と交換することを含む請求項15に記載のデバイス製造方法。
- 前記物体は、前記基板及び前記基板を載置する基板テーブルを含む請求項15又は16に記載のデバイス製造方法。
- 前記挿入部材のうち前記光学アセンブリと対向する面には、前記液浸液体に対する親液処理又は撥液処理がなされている請求項14〜17のいずれか一項に記載のデバイス製造方法。
- 前記液浸液体を供給する液浸部材に形成された回収口より前記物体と前記挿入部材との間に存在する液浸液体を除去する請求項14〜18のいずれか一項に記載のデバイス製造方法。
- 前記基板テーブルに形成された回収口より前記物体と前記挿入部材との間に存在する液浸液体を除去する請求項17に記載のデバイス製造方法。
- 前記挿入部材に形成された回収口より前記物体と前記挿入部材との間に存在する液浸液体を除去する請求項14〜20のいずれか一項に記載のデバイス製造方法。
- 前記挿入部材のうち前記物体と対向する面には、前記液浸液体に対する撥液処理がなされている請求項14〜21のいずれか一項に記載のデバイス製造方法。
- 前記光学アセンブリと前記物体との間に前記液浸液体が維持されているときは、前記挿入部材を前記物体及び前記光学アセンブリと分離して離れた位置に退避させる請求項14〜22のいずれか一項に記載のデバイス製造方法。
- 前記基板又は前記基板テーブルが前記光学アセンブリ下の位置から離れる際に、前記基板又は前記基板テーブルと前記光学アセンブリとの間に前記挿入部材が挿入されて前記第一面と前記光学アセンブリとの間に前記液浸液体が維持される請求項17に記載のデバイス製造方法。
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US91805707P | 2007-03-15 | 2007-03-15 | |
US60/918,057 | 2007-03-15 | ||
US11/976,898 US8237911B2 (en) | 2007-03-15 | 2007-10-29 | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US11/976,898 | 2007-10-29 | ||
PCT/US2008/003224 WO2008115372A1 (en) | 2007-03-15 | 2008-03-12 | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
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JP2013032858A Division JP5327768B2 (ja) | 2007-03-15 | 2013-02-22 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
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JP2010521814A JP2010521814A (ja) | 2010-06-24 |
JP2010521814A5 JP2010521814A5 (ja) | 2011-06-16 |
JP5282255B2 true JP5282255B2 (ja) | 2013-09-04 |
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JP2009553605A Expired - Fee Related JP5282255B2 (ja) | 2007-03-15 | 2008-03-12 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
JP2013032858A Expired - Fee Related JP5327768B2 (ja) | 2007-03-15 | 2013-02-22 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
JP2013139931A Active JP5510600B2 (ja) | 2007-03-15 | 2013-07-03 | リソグラフィック投影装置及び液浸露光方法 |
JP2014065131A Active JP5725227B2 (ja) | 2007-03-15 | 2014-03-27 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
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JP2013139931A Active JP5510600B2 (ja) | 2007-03-15 | 2013-07-03 | リソグラフィック投影装置及び液浸露光方法 |
JP2014065131A Active JP5725227B2 (ja) | 2007-03-15 | 2014-03-27 | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
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US (4) | US8237911B2 (ja) |
JP (4) | JP5282255B2 (ja) |
KR (4) | KR20160003326A (ja) |
TW (2) | TWI545407B (ja) |
WO (1) | WO2008115372A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014168068A (ja) * | 2007-03-15 | 2014-09-11 | Nikon Corp | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009076520A (ja) * | 2007-09-19 | 2009-04-09 | Canon Inc | 露光装置 |
US8451425B2 (en) * | 2007-12-28 | 2013-05-28 | Nikon Corporation | Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method |
US8610873B2 (en) | 2008-03-17 | 2013-12-17 | Nikon Corporation | Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate |
US8289497B2 (en) | 2008-03-18 | 2012-10-16 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
KR20120113238A (ko) | 2010-01-08 | 2012-10-12 | 가부시키가이샤 니콘 | 액침 부재, 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
US9323160B2 (en) | 2012-04-10 | 2016-04-26 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
US9268231B2 (en) | 2012-04-10 | 2016-02-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
US9823580B2 (en) | 2012-07-20 | 2017-11-21 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
US9568828B2 (en) | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
US9494870B2 (en) | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
US9720331B2 (en) | 2012-12-27 | 2017-08-01 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
CN105229774B (zh) * | 2013-10-08 | 2019-01-11 | 株式会社尼康 | 液浸部件、曝光装置及曝光方法、以及器件制造方法 |
CN104570613B (zh) * | 2013-10-25 | 2018-01-19 | 上海微电子装备(集团)股份有限公司 | 浸没头、浸没流场初始化和维持方法及光刻设备 |
TWI606529B (zh) * | 2016-11-02 | 2017-11-21 | Lens housing assembly for wafer inspection equipment | |
JP6610726B2 (ja) * | 2018-07-11 | 2019-11-27 | 株式会社ニコン | 液浸部材、露光装置及び露光方法、並びにデバイス製造方法 |
Family Cites Families (147)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS62121417A (ja) * | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
US5469963A (en) * | 1992-04-08 | 1995-11-28 | Asyst Technologies, Inc. | Sealable transportable container having improved liner |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP3747958B2 (ja) * | 1995-04-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
JP3212199B2 (ja) * | 1993-10-04 | 2001-09-25 | 旭硝子株式会社 | 平板型陰極線管 |
US5528118A (en) * | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5874820A (en) * | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US5623853A (en) * | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JPH08171054A (ja) * | 1994-12-16 | 1996-07-02 | Nikon Corp | 反射屈折光学系 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH1020195A (ja) * | 1996-06-28 | 1998-01-23 | Nikon Corp | 反射屈折光学系 |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
SG102627A1 (en) * | 1996-11-28 | 2004-03-26 | Nikon Corp | Lithographic device |
USRE40043E1 (en) * | 1997-03-10 | 2008-02-05 | Asml Netherlands B.V. | Positioning device having two object holders |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
KR20020006670A (ko) * | 1999-03-12 | 2002-01-24 | 시마무라 테루오 | 노광장치 및 노광방법, 그리고 디바이스 제조방법 |
JP4365934B2 (ja) * | 1999-05-10 | 2009-11-18 | キヤノン株式会社 | 露光装置、半導体製造装置およびデバイス製造方法 |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
JPWO2003085708A1 (ja) * | 2002-04-09 | 2005-08-18 | 株式会社ニコン | 露光方法及び露光装置、並びにデバイス製造方法 |
WO2004019128A2 (en) | 2002-08-23 | 2004-03-04 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
CN101349876B (zh) * | 2002-11-12 | 2010-12-01 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2495613B1 (en) * | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
TWI251127B (en) * | 2002-11-12 | 2006-03-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG2010050110A (en) * | 2002-11-12 | 2014-06-27 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
JP4232449B2 (ja) * | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
US6992750B2 (en) * | 2002-12-10 | 2006-01-31 | Canon Kabushiki Kaisha | Exposure apparatus and method |
KR20110086130A (ko) | 2002-12-10 | 2011-07-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP4184346B2 (ja) | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
AU2003283717A1 (en) | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
EP1579435B1 (en) | 2002-12-19 | 2007-06-27 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
JP4488004B2 (ja) * | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
KR101745223B1 (ko) * | 2003-04-10 | 2017-06-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
EP3352010A1 (en) | 2003-04-10 | 2018-07-25 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
EP2950148B1 (en) | 2003-04-10 | 2016-09-21 | Nikon Corporation | Environmental system including vaccum scavenge for an immersion lithography apparatus |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
KR101498405B1 (ko) | 2003-04-11 | 2015-03-04 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
CN101825847B (zh) | 2003-04-11 | 2013-10-16 | 株式会社尼康 | 用于沉浸式光刻光学系统的清洗方法 |
EP1614000B1 (en) | 2003-04-17 | 2012-01-18 | Nikon Corporation | Immersion lithographic apparatus |
JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
TWI616932B (zh) | 2003-05-23 | 2018-03-01 | Nikon Corp | Exposure device and component manufacturing method |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
KR101830565B1 (ko) * | 2003-06-19 | 2018-02-20 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
KR20060027832A (ko) | 2003-07-01 | 2006-03-28 | 가부시키가이샤 니콘 | 광학 엘리먼트로서 동위원소적으로 특정된 유체를 사용하는방법 |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7061578B2 (en) * | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US7070915B2 (en) * | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
KR101590686B1 (ko) * | 2003-09-03 | 2016-02-01 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
JP4524601B2 (ja) | 2003-10-09 | 2010-08-18 | 株式会社ニコン | 露光装置及び露光方法、デバイス製造方法 |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US20070105050A1 (en) | 2003-11-05 | 2007-05-10 | Dsm Ip Assets B.V. | Method and apparatus for producing microchips |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
US8854602B2 (en) | 2003-11-24 | 2014-10-07 | Asml Netherlands B.V. | Holding device for an optical element in an objective |
US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) * | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
JP2005175176A (ja) | 2003-12-11 | 2005-06-30 | Nikon Corp | 露光方法及びデバイス製造方法 |
EP1700163A1 (en) | 2003-12-15 | 2006-09-13 | Carl Zeiss SMT AG | Objective as a microlithography projection objective with at least one liquid lens |
KR101200654B1 (ko) | 2003-12-15 | 2012-11-12 | 칼 짜이스 에스엠티 게엠베하 | 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈 |
US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
CN102169226B (zh) * | 2004-01-14 | 2014-04-23 | 卡尔蔡司Smt有限责任公司 | 反射折射投影物镜 |
CN101799587B (zh) | 2004-01-16 | 2012-05-30 | 卡尔蔡司Smt有限责任公司 | 光学系统、投影系统及微结构半导体部件的制造方法 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
JP4843503B2 (ja) | 2004-01-20 | 2011-12-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
WO2005074606A2 (en) | 2004-02-03 | 2005-08-18 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
EP1716454A1 (en) | 2004-02-09 | 2006-11-02 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101115111B1 (ko) | 2004-02-13 | 2012-04-16 | 칼 짜이스 에스엠티 게엠베하 | 마이크로 리소그래프 투영 노광 장치 투영 대물 렌즈 |
JP2007523383A (ja) | 2004-02-18 | 2007-08-16 | コーニング インコーポレイテッド | 深紫外光による大開口数結像のための反射屈折結像光学系 |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7227619B2 (en) * | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
JP5130609B2 (ja) * | 2004-06-10 | 2013-01-30 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
US7119876B2 (en) * | 2004-10-18 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7583357B2 (en) * | 2004-11-12 | 2009-09-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101339887B1 (ko) * | 2004-12-06 | 2013-12-10 | 가부시키가이샤 니콘 | 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및디바이스 제조 방법 |
US7403261B2 (en) * | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) * | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006237291A (ja) * | 2005-02-25 | 2006-09-07 | Canon Inc | 露光装置 |
US7751026B2 (en) * | 2005-08-25 | 2010-07-06 | Nikon Corporation | Apparatus and method for recovering fluid for immersion lithography |
US7804577B2 (en) * | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
JP4567651B2 (ja) * | 2005-11-16 | 2010-10-20 | エーエスエムエル ネザーランズ ビー.ブイ. | 露光装置及びデバイス製造方法 |
US7760324B2 (en) * | 2006-03-20 | 2010-07-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8237911B2 (en) * | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US8068209B2 (en) | 2007-03-23 | 2011-11-29 | Nikon Corporation | Nozzle to help reduce the escape of immersion liquid from an immersion lithography tool |
US8134685B2 (en) * | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US8451425B2 (en) * | 2007-12-28 | 2013-05-28 | Nikon Corporation | Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method |
US8610873B2 (en) * | 2008-03-17 | 2013-12-17 | Nikon Corporation | Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate |
-
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014168068A (ja) * | 2007-03-15 | 2014-09-11 | Nikon Corp | 液浸リソグラフィマシンにおける基板交換の間に、液浸流体を光学アセンブリに隣接して保持する装置および方法 |
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JP2014168068A (ja) | 2014-09-11 |
US20080225246A1 (en) | 2008-09-18 |
US20130141702A1 (en) | 2013-06-06 |
KR20140124867A (ko) | 2014-10-27 |
KR20100015585A (ko) | 2010-02-12 |
JP2013123079A (ja) | 2013-06-20 |
TWI440985B (zh) | 2014-06-11 |
JP2013225693A (ja) | 2013-10-31 |
TWI545407B (zh) | 2016-08-11 |
US8400610B2 (en) | 2013-03-19 |
JP5725227B2 (ja) | 2015-05-27 |
WO2008115372A8 (en) | 2010-05-06 |
KR20180031083A (ko) | 2018-03-27 |
KR101580467B1 (ko) | 2015-12-28 |
US20140232999A1 (en) | 2014-08-21 |
WO2008115372A1 (en) | 2008-09-25 |
KR101515649B1 (ko) | 2015-04-27 |
JP5327768B2 (ja) | 2013-10-30 |
US8237911B2 (en) | 2012-08-07 |
TW201437769A (zh) | 2014-10-01 |
KR20160003326A (ko) | 2016-01-08 |
TW200907586A (en) | 2009-02-16 |
US8743343B2 (en) | 2014-06-03 |
JP5510600B2 (ja) | 2014-06-04 |
JP2010521814A (ja) | 2010-06-24 |
US20120262687A1 (en) | 2012-10-18 |
US9217933B2 (en) | 2015-12-22 |
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