TWI440985B - 浸沒式微影機之晶圓交換期間維持浸沒流體相鄰於光學組件的裝置和方法 - Google Patents

浸沒式微影機之晶圓交換期間維持浸沒流體相鄰於光學組件的裝置和方法 Download PDF

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Publication number
TWI440985B
TWI440985B TW097109085A TW97109085A TWI440985B TW I440985 B TWI440985 B TW I440985B TW 097109085 A TW097109085 A TW 097109085A TW 97109085 A TW97109085 A TW 97109085A TW I440985 B TWI440985 B TW I440985B
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TW
Taiwan
Prior art keywords
substrate
immersion liquid
wafer
optical
optical component
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TW097109085A
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English (en)
Chinese (zh)
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TW200907586A (en
Inventor
潘家田
許偉峰
蓋斯瓦尼 高瑞夫
庫恩 戴瑞克
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尼康股份有限公司
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Publication of TW200907586A publication Critical patent/TW200907586A/zh
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW097109085A 2007-03-15 2008-03-14 浸沒式微影機之晶圓交換期間維持浸沒流體相鄰於光學組件的裝置和方法 TWI440985B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US91805707P 2007-03-15 2007-03-15
US11/976,898 US8237911B2 (en) 2007-03-15 2007-10-29 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine

Publications (2)

Publication Number Publication Date
TW200907586A TW200907586A (en) 2009-02-16
TWI440985B true TWI440985B (zh) 2014-06-11

Family

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TW097109085A TWI440985B (zh) 2007-03-15 2008-03-14 浸沒式微影機之晶圓交換期間維持浸沒流體相鄰於光學組件的裝置和方法
TW103117596A TWI545407B (zh) 2007-03-15 2008-03-14 浸沒式微影機之晶圓交換期間維持浸沒流體相鄰於光學組件的裝置和方法

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TW103117596A TWI545407B (zh) 2007-03-15 2008-03-14 浸沒式微影機之晶圓交換期間維持浸沒流體相鄰於光學組件的裝置和方法

Country Status (5)

Country Link
US (4) US8237911B2 (enExample)
JP (4) JP5282255B2 (enExample)
KR (4) KR101515649B1 (enExample)
TW (2) TWI440985B (enExample)
WO (1) WO2008115372A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
JP2009076520A (ja) * 2007-09-19 2009-04-09 Canon Inc 露光装置
US8451425B2 (en) * 2007-12-28 2013-05-28 Nikon Corporation Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method
US8610873B2 (en) 2008-03-17 2013-12-17 Nikon Corporation Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate
US8289497B2 (en) 2008-03-18 2012-10-16 Nikon Corporation Apparatus and methods for recovering fluid in immersion lithography
WO2011083724A1 (ja) 2010-01-08 2011-07-14 株式会社ニコン 液浸部材、露光装置、露光方法、及びデバイス製造方法
US9323160B2 (en) 2012-04-10 2016-04-26 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
US9268231B2 (en) 2012-04-10 2016-02-23 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
US9823580B2 (en) 2012-07-20 2017-11-21 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
US9494870B2 (en) 2012-10-12 2016-11-15 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9568828B2 (en) 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9720331B2 (en) 2012-12-27 2017-08-01 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
US9651873B2 (en) 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
CN105229774B (zh) * 2013-10-08 2019-01-11 株式会社尼康 液浸部件、曝光装置及曝光方法、以及器件制造方法
CN104570613B (zh) * 2013-10-25 2018-01-19 上海微电子装备(集团)股份有限公司 浸没头、浸没流场初始化和维持方法及光刻设备
TWI606529B (zh) * 2016-11-02 2017-11-21 Lens housing assembly for wafer inspection equipment
JP6610726B2 (ja) * 2018-07-11 2019-11-27 株式会社ニコン 液浸部材、露光装置及び露光方法、並びにデバイス製造方法

Family Cites Families (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS62121417A (ja) * 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
US5469963A (en) 1992-04-08 1995-11-28 Asyst Technologies, Inc. Sealable transportable container having improved liner
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3747958B2 (ja) 1995-04-07 2006-02-22 株式会社ニコン 反射屈折光学系
JP3212199B2 (ja) 1993-10-04 2001-09-25 旭硝子株式会社 平板型陰極線管
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08171054A (ja) 1994-12-16 1996-07-02 Nikon Corp 反射屈折光学系
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH1020195A (ja) 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
AU5067898A (en) 1996-11-28 1998-06-22 Nikon Corporation Aligner and method for exposure
USRE40043E1 (en) 1997-03-10 2008-02-05 Asml Netherlands B.V. Positioning device having two object holders
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US6842221B1 (en) 1999-03-12 2005-01-11 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
JP4365934B2 (ja) 1999-05-10 2009-11-18 キヤノン株式会社 露光装置、半導体製造装置およびデバイス製造方法
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
JPWO2003085708A1 (ja) 2002-04-09 2005-08-18 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
EP2495613B1 (en) * 2002-11-12 2013-07-31 ASML Netherlands B.V. Lithographic apparatus
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101382738B (zh) 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
CN101713932B (zh) 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
JP4232449B2 (ja) * 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
US6992750B2 (en) 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
CN101872135B (zh) 2002-12-10 2013-07-31 株式会社尼康 曝光设备和器件制造法
WO2004055803A1 (en) 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
ES2268450T3 (es) 2002-12-19 2007-03-16 Koninklijke Philips Electronics N.V. Metodo y dispositivo para irradiar puntos en una capa.
DE60314668T2 (de) 2002-12-19 2008-03-06 Koninklijke Philips Electronics N.V. Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
WO2004093159A2 (en) 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
CN103383527B (zh) 2003-04-10 2015-10-28 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
EP1611482B1 (en) 2003-04-10 2015-06-03 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
WO2004090633A2 (en) 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
WO2004092833A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
EP2613195B1 (en) 2003-04-11 2015-12-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
KR20190007532A (ko) 2003-04-11 2019-01-22 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI616932B (zh) 2003-05-23 2018-03-01 Nikon Corp Exposure device and component manufacturing method
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
CN101436003B (zh) 2003-06-19 2011-08-17 株式会社尼康 曝光装置及器件制造方法
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
WO2005006026A2 (en) 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101748923B1 (ko) 2003-09-03 2017-06-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4378136B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP4524601B2 (ja) 2003-10-09 2010-08-18 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
JP4747263B2 (ja) 2003-11-24 2011-08-17 カール・ツァイス・エスエムティー・ゲーエムベーハー オブジェクティブにおける光学素子のための保持装置
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005175176A (ja) 2003-12-11 2005-06-30 Nikon Corp 露光方法及びデバイス製造方法
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
US7385764B2 (en) 2003-12-15 2008-06-10 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
KR101179350B1 (ko) 2004-01-14 2012-09-11 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
CN1910522B (zh) 2004-01-16 2010-05-26 卡尔蔡司Smt股份公司 偏振调制光学元件
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
JP4843503B2 (ja) 2004-01-20 2011-12-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置および投影レンズのための測定装置
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
KR20070039869A (ko) 2004-02-03 2007-04-13 브루스 더블유. 스미스 용액을 사용한 포토리소그래피 방법 및 관련 시스템
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
EP1714192A1 (en) 2004-02-13 2006-10-25 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
WO2005081030A1 (en) 2004-02-18 2005-09-01 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
JP5130609B2 (ja) * 2004-06-10 2013-01-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US7119876B2 (en) 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) * 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4784513B2 (ja) * 2004-12-06 2011-10-05 株式会社ニコン メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
US7403261B2 (en) * 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006237291A (ja) * 2005-02-25 2006-09-07 Canon Inc 露光装置
US7751026B2 (en) 2005-08-25 2010-07-06 Nikon Corporation Apparatus and method for recovering fluid for immersion lithography
US7804577B2 (en) * 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
JP4567651B2 (ja) * 2005-11-16 2010-10-20 エーエスエムエル ネザーランズ ビー.ブイ. 露光装置及びデバイス製造方法
US7760324B2 (en) * 2006-03-20 2010-07-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8068209B2 (en) 2007-03-23 2011-11-29 Nikon Corporation Nozzle to help reduce the escape of immersion liquid from an immersion lithography tool
US8134685B2 (en) * 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US8451425B2 (en) * 2007-12-28 2013-05-28 Nikon Corporation Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method
US8610873B2 (en) * 2008-03-17 2013-12-17 Nikon Corporation Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate

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