KR20170058428A - 성막 방법 및 스퍼터링 장치 - Google Patents

성막 방법 및 스퍼터링 장치 Download PDF

Info

Publication number
KR20170058428A
KR20170058428A KR1020177010896A KR20177010896A KR20170058428A KR 20170058428 A KR20170058428 A KR 20170058428A KR 1020177010896 A KR1020177010896 A KR 1020177010896A KR 20177010896 A KR20177010896 A KR 20177010896A KR 20170058428 A KR20170058428 A KR 20170058428A
Authority
KR
South Korea
Prior art keywords
target
plasma
antenna
bias voltage
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020177010896A
Other languages
English (en)
Korean (ko)
Inventor
요시타카 세토구치
시게아키 키시다
야스노리 안도
Original Assignee
닛신덴키 가부시키 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛신덴키 가부시키 가이샤 filed Critical 닛신덴키 가부시키 가이샤
Publication of KR20170058428A publication Critical patent/KR20170058428A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
KR1020177010896A 2014-09-26 2015-04-10 성막 방법 및 스퍼터링 장치 Ceased KR20170058428A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014196266A JP6264248B2 (ja) 2014-09-26 2014-09-26 成膜方法およびスパッタリング装置
JPJP-P-2014-196266 2014-09-26
PCT/JP2015/061238 WO2016047184A1 (ja) 2014-09-26 2015-04-10 成膜方法およびスパッタリング装置

Publications (1)

Publication Number Publication Date
KR20170058428A true KR20170058428A (ko) 2017-05-26

Family

ID=55580725

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177010896A Ceased KR20170058428A (ko) 2014-09-26 2015-04-10 성막 방법 및 스퍼터링 장치

Country Status (4)

Country Link
JP (1) JP6264248B2 (enExample)
KR (1) KR20170058428A (enExample)
CN (1) CN106715750B (enExample)
WO (1) WO2016047184A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7061257B2 (ja) 2017-03-17 2022-04-28 日新電機株式会社 スパッタリング装置
JP6310601B1 (ja) 2017-06-07 2018-04-11 日新電機株式会社 スパッタリング装置
TWI684283B (zh) * 2017-06-07 2020-02-01 日商日新電機股份有限公司 薄膜電晶體的製造方法
JP6916699B2 (ja) * 2017-09-14 2021-08-11 株式会社Ｓｃｒｅｅｎホールディングス 成膜方法および成膜装置
CN111542645B (zh) 2017-12-27 2022-07-26 佳能安内华股份有限公司 成膜方法及成膜装置
JP2021088727A (ja) * 2018-03-20 2021-06-10 日新電機株式会社 成膜方法
CN111270209B (zh) * 2018-12-05 2023-12-12 东君新能源有限公司 一种蒸汽溅射装置及控制系统、控制方法
JP2020152968A (ja) * 2019-03-20 2020-09-24 日新電機株式会社 スパッタリング装置
GB2597985B (en) * 2020-08-13 2024-07-31 Dyson Technology Ltd Method of forming a cathode layer, method of forming a battery half cell
JP7740827B2 (ja) * 2021-10-20 2025-09-17 東京エレクトロン株式会社 スパッタ成膜装置及びスパッタ成膜方法
JP2024034664A (ja) * 2022-09-01 2024-03-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193868A (ja) * 1989-12-21 1991-08-23 Toyota Motor Corp 薄膜の形成方法
JP2002069635A (ja) * 2000-09-05 2002-03-08 Ulvac Japan Ltd プラズマ発生装置並びにこの装置を利用した緻密な硬質薄膜の形成装置及び硬質薄膜の形成方法
JP2003183824A (ja) * 2001-12-12 2003-07-03 Matsushita Electric Ind Co Ltd スパッタ方法
JP2005163151A (ja) * 2003-12-04 2005-06-23 Seinan Kogyo Kk 三次元スパッタ成膜装置並びに方法
JP2013206652A (ja) * 2012-03-28 2013-10-07 Nissin Electric Co Ltd アンテナ装置、それを備えるプラズマ処理装置およびスパッタリング装置
KR20140019577A (ko) * 2012-08-06 2014-02-17 삼성디스플레이 주식회사 박막 증착 장치 및 이를 이용한 박막 증착 방법
JP2014057034A (ja) * 2012-08-10 2014-03-27 Dainippon Screen Mfg Co Ltd 酸化アルミニウムの成膜方法
JP6101533B2 (ja) * 2013-03-27 2017-03-22 株式会社Ｓｃｒｅｅｎホールディングス 酸化アルミニウムの成膜方法

Also Published As

Publication number Publication date
JP6264248B2 (ja) 2018-01-24
CN106715750A (zh) 2017-05-24
CN106715750B (zh) 2019-02-15
JP2016065299A (ja) 2016-04-28
WO2016047184A1 (ja) 2016-03-31

Similar Documents

Publication Publication Date Title
KR20170058428A (ko) 성막 방법 및 스퍼터링 장치
US20250118566A1 (en) Plasma processing method and plasma processing device
US9034198B2 (en) Plasma etching method
KR100886272B1 (ko) 플라즈마 처리 장치
TWI505354B (zh) Dry etching apparatus and dry etching method
US9564297B2 (en) Electron beam plasma source with remote radical source
KR100886273B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR101267459B1 (ko) 플라즈마 이온주입 장치 및 방법
KR20160028370A (ko) 에칭 방법
EP2911187A1 (en) Etching method
JP3706027B2 (ja) プラズマ処理方法
US20130256272A1 (en) Low electron temperature microwave surface-wave plasma (swp) processing method and apparatus
JPH10289887A (ja) イオン化スパッタリング装置
KR20170024922A (ko) 플라즈마 발생 장치
KR101853167B1 (ko) 플라즈마 에칭 방법 및 플라즈마 에칭 장치
KR20150082196A (ko) 플라즈마 처리 방법
KR102438638B1 (ko) 플라즈마 에칭 방법
KR20220058433A (ko) 에칭 방법 및 플라즈마 처리 장치
US20140273538A1 (en) Non-ambipolar electric pressure plasma uniformity control
US8480912B2 (en) Plasma processing apparatus and plasma processing method
KR20070040747A (ko) 선전리를 갖는 펄스 모드에서 마그네트론 양극 미분쇄에의한 증착
JP2000068227A (ja) 表面処理方法および装置
US7777178B2 (en) Plasma generating apparatus and method using neutral beam
Felmetsger et al. Design, operation mode, and stress control capability of S-Gun magnetron for ac reactive sputtering
KR20220009335A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

Patent event date: 20170421

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20170421

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20181105

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20190411

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20181105

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20190610

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20190411

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Appeal identifier: 2019101001922

Request date: 20190610

J301 Trial decision

Free format text: TRIAL NUMBER: 2019101001922; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20190610

Effective date: 20200427

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20200427

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20190610

Decision date: 20200427

Appeal identifier: 2019101001922