JP6264248B2 - 成膜方法およびスパッタリング装置 - Google Patents

成膜方法およびスパッタリング装置 Download PDF

Info

Publication number
JP6264248B2
JP6264248B2 JP2014196266A JP2014196266A JP6264248B2 JP 6264248 B2 JP6264248 B2 JP 6264248B2 JP 2014196266 A JP2014196266 A JP 2014196266A JP 2014196266 A JP2014196266 A JP 2014196266A JP 6264248 B2 JP6264248 B2 JP 6264248B2
Authority
JP
Japan
Prior art keywords
target
frequency power
plasma
antenna
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014196266A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016065299A5 (enExample
JP2016065299A (ja
Inventor
佳孝 瀬戸口
佳孝 瀬戸口
茂明 岸田
茂明 岸田
靖典 安東
靖典 安東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Priority to JP2014196266A priority Critical patent/JP6264248B2/ja
Priority to CN201580051441.7A priority patent/CN106715750B/zh
Priority to PCT/JP2015/061238 priority patent/WO2016047184A1/ja
Priority to KR1020177010896A priority patent/KR20170058428A/ko
Publication of JP2016065299A publication Critical patent/JP2016065299A/ja
Publication of JP2016065299A5 publication Critical patent/JP2016065299A5/ja
Application granted granted Critical
Publication of JP6264248B2 publication Critical patent/JP6264248B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3471Introduction of auxiliary energy into the plasma
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • H01J37/3408Planar magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3444Associated circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
JP2014196266A 2014-09-26 2014-09-26 成膜方法およびスパッタリング装置 Active JP6264248B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014196266A JP6264248B2 (ja) 2014-09-26 2014-09-26 成膜方法およびスパッタリング装置
CN201580051441.7A CN106715750B (zh) 2014-09-26 2015-04-10 成膜方法及溅镀装置
PCT/JP2015/061238 WO2016047184A1 (ja) 2014-09-26 2015-04-10 成膜方法およびスパッタリング装置
KR1020177010896A KR20170058428A (ko) 2014-09-26 2015-04-10 성막 방법 및 스퍼터링 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014196266A JP6264248B2 (ja) 2014-09-26 2014-09-26 成膜方法およびスパッタリング装置

Publications (3)

Publication Number Publication Date
JP2016065299A JP2016065299A (ja) 2016-04-28
JP2016065299A5 JP2016065299A5 (enExample) 2017-02-16
JP6264248B2 true JP6264248B2 (ja) 2018-01-24

Family

ID=55580725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014196266A Active JP6264248B2 (ja) 2014-09-26 2014-09-26 成膜方法およびスパッタリング装置

Country Status (4)

Country Link
JP (1) JP6264248B2 (enExample)
KR (1) KR20170058428A (enExample)
CN (1) CN106715750B (enExample)
WO (1) WO2016047184A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7061257B2 (ja) 2017-03-17 2022-04-28 日新電機株式会社 スパッタリング装置
JP6310601B1 (ja) 2017-06-07 2018-04-11 日新電機株式会社 スパッタリング装置
TWI684283B (zh) * 2017-06-07 2020-02-01 日商日新電機股份有限公司 薄膜電晶體的製造方法
JP6916699B2 (ja) * 2017-09-14 2021-08-11 株式会社Screenホールディングス 成膜方法および成膜装置
CN111542645B (zh) 2017-12-27 2022-07-26 佳能安内华股份有限公司 成膜方法及成膜装置
JP2021088727A (ja) * 2018-03-20 2021-06-10 日新電機株式会社 成膜方法
CN111270209B (zh) * 2018-12-05 2023-12-12 东君新能源有限公司 一种蒸汽溅射装置及控制系统、控制方法
JP2020152968A (ja) * 2019-03-20 2020-09-24 日新電機株式会社 スパッタリング装置
GB2597985B (en) * 2020-08-13 2024-07-31 Dyson Technology Ltd Method of forming a cathode layer, method of forming a battery half cell
JP7740827B2 (ja) * 2021-10-20 2025-09-17 東京エレクトロン株式会社 スパッタ成膜装置及びスパッタ成膜方法
JP2024034664A (ja) * 2022-09-01 2024-03-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193868A (ja) * 1989-12-21 1991-08-23 Toyota Motor Corp 薄膜の形成方法
JP2002069635A (ja) * 2000-09-05 2002-03-08 Ulvac Japan Ltd プラズマ発生装置並びにこの装置を利用した緻密な硬質薄膜の形成装置及び硬質薄膜の形成方法
JP2003183824A (ja) * 2001-12-12 2003-07-03 Matsushita Electric Ind Co Ltd スパッタ方法
JP2005163151A (ja) * 2003-12-04 2005-06-23 Seinan Kogyo Kk 三次元スパッタ成膜装置並びに方法
JP2013206652A (ja) * 2012-03-28 2013-10-07 Nissin Electric Co Ltd アンテナ装置、それを備えるプラズマ処理装置およびスパッタリング装置
KR20140019577A (ko) * 2012-08-06 2014-02-17 삼성디스플레이 주식회사 박막 증착 장치 및 이를 이용한 박막 증착 방법
JP2014057034A (ja) * 2012-08-10 2014-03-27 Dainippon Screen Mfg Co Ltd 酸化アルミニウムの成膜方法
JP6101533B2 (ja) * 2013-03-27 2017-03-22 株式会社Screenホールディングス 酸化アルミニウムの成膜方法

Also Published As

Publication number Publication date
CN106715750A (zh) 2017-05-24
CN106715750B (zh) 2019-02-15
JP2016065299A (ja) 2016-04-28
KR20170058428A (ko) 2017-05-26
WO2016047184A1 (ja) 2016-03-31

Similar Documents

Publication Publication Date Title
JP6264248B2 (ja) 成膜方法およびスパッタリング装置
US11404281B2 (en) Method of etching silicon containing films selectively against each other
US8889534B1 (en) Solid state source introduction of dopants and additives for a plasma doping process
US9449838B2 (en) Semiconductor device manufacturing method
US20200058467A1 (en) Plasma processing apparatus
CN108504996B (zh) 成膜方法和等离子体处理装置
KR100886273B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR20160028370A (ko) 에칭 방법
KR20180051663A (ko) 원자 레벨 레졸루션 및 플라즈마 프로세싱 제어를 위한 방법들
US20150228457A1 (en) Gas supply method and plasma processing apparatus
JP5405504B2 (ja) プラズマ処理装置およびプラズマ処理方法
KR20150061570A (ko) 마이크로파 가열 처리 장치 및 마이크로파 가열 처리 방법
US9343291B2 (en) Method for forming an interfacial layer on a semiconductor using hydrogen plasma
US8071446B2 (en) Manufacturing method of semiconductor device and substrate processing apparatus
US11705309B2 (en) Substrate processing method
JP5332362B2 (ja) プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP7507067B2 (ja) スパッタリング装置
JP2006253312A (ja) プラズマ処理装置
JP5728565B2 (ja) プラズマ処理装置及びこれに用いる遅波板
JP2014075281A (ja) プラズマ処理装置及び温度制御方法
KR101556830B1 (ko) 스퍼터율 향상을 위한 유도 결합형 플라즈마 소스 및 이를 사용하는 스퍼터링 장치
KR20140036876A (ko) 스퍼터링 장치 및 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170116

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170124

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171121

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171204

R150 Certificate of patent or registration of utility model

Ref document number: 6264248

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250