JP6264248B2 - 成膜方法およびスパッタリング装置 - Google Patents
成膜方法およびスパッタリング装置 Download PDFInfo
- Publication number
- JP6264248B2 JP6264248B2 JP2014196266A JP2014196266A JP6264248B2 JP 6264248 B2 JP6264248 B2 JP 6264248B2 JP 2014196266 A JP2014196266 A JP 2014196266A JP 2014196266 A JP2014196266 A JP 2014196266A JP 6264248 B2 JP6264248 B2 JP 6264248B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- frequency power
- plasma
- antenna
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004544 sputter deposition Methods 0.000 title claims description 74
- 238000000034 method Methods 0.000 title claims description 49
- 230000015572 biosynthetic process Effects 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 49
- 238000009616 inductively coupled plasma Methods 0.000 claims description 12
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 description 125
- 230000000694 effects Effects 0.000 description 19
- 239000007789 gas Substances 0.000 description 19
- 239000004020 conductor Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000001052 transient effect Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910007541 Zn O Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 235000012489 doughnuts Nutrition 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- WGCXSIWGFOQDEG-UHFFFAOYSA-N [Zn].[Sn].[In] Chemical compound [Zn].[Sn].[In] WGCXSIWGFOQDEG-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Plasma Technology (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014196266A JP6264248B2 (ja) | 2014-09-26 | 2014-09-26 | 成膜方法およびスパッタリング装置 |
| CN201580051441.7A CN106715750B (zh) | 2014-09-26 | 2015-04-10 | 成膜方法及溅镀装置 |
| PCT/JP2015/061238 WO2016047184A1 (ja) | 2014-09-26 | 2015-04-10 | 成膜方法およびスパッタリング装置 |
| KR1020177010896A KR20170058428A (ko) | 2014-09-26 | 2015-04-10 | 성막 방법 및 스퍼터링 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014196266A JP6264248B2 (ja) | 2014-09-26 | 2014-09-26 | 成膜方法およびスパッタリング装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016065299A JP2016065299A (ja) | 2016-04-28 |
| JP2016065299A5 JP2016065299A5 (enExample) | 2017-02-16 |
| JP6264248B2 true JP6264248B2 (ja) | 2018-01-24 |
Family
ID=55580725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014196266A Active JP6264248B2 (ja) | 2014-09-26 | 2014-09-26 | 成膜方法およびスパッタリング装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6264248B2 (enExample) |
| KR (1) | KR20170058428A (enExample) |
| CN (1) | CN106715750B (enExample) |
| WO (1) | WO2016047184A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7061257B2 (ja) | 2017-03-17 | 2022-04-28 | 日新電機株式会社 | スパッタリング装置 |
| JP6310601B1 (ja) | 2017-06-07 | 2018-04-11 | 日新電機株式会社 | スパッタリング装置 |
| TWI684283B (zh) * | 2017-06-07 | 2020-02-01 | 日商日新電機股份有限公司 | 薄膜電晶體的製造方法 |
| JP6916699B2 (ja) * | 2017-09-14 | 2021-08-11 | 株式会社Screenホールディングス | 成膜方法および成膜装置 |
| CN111542645B (zh) | 2017-12-27 | 2022-07-26 | 佳能安内华股份有限公司 | 成膜方法及成膜装置 |
| JP2021088727A (ja) * | 2018-03-20 | 2021-06-10 | 日新電機株式会社 | 成膜方法 |
| CN111270209B (zh) * | 2018-12-05 | 2023-12-12 | 东君新能源有限公司 | 一种蒸汽溅射装置及控制系统、控制方法 |
| JP2020152968A (ja) * | 2019-03-20 | 2020-09-24 | 日新電機株式会社 | スパッタリング装置 |
| GB2597985B (en) * | 2020-08-13 | 2024-07-31 | Dyson Technology Ltd | Method of forming a cathode layer, method of forming a battery half cell |
| JP7740827B2 (ja) * | 2021-10-20 | 2025-09-17 | 東京エレクトロン株式会社 | スパッタ成膜装置及びスパッタ成膜方法 |
| JP2024034664A (ja) * | 2022-09-01 | 2024-03-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03193868A (ja) * | 1989-12-21 | 1991-08-23 | Toyota Motor Corp | 薄膜の形成方法 |
| JP2002069635A (ja) * | 2000-09-05 | 2002-03-08 | Ulvac Japan Ltd | プラズマ発生装置並びにこの装置を利用した緻密な硬質薄膜の形成装置及び硬質薄膜の形成方法 |
| JP2003183824A (ja) * | 2001-12-12 | 2003-07-03 | Matsushita Electric Ind Co Ltd | スパッタ方法 |
| JP2005163151A (ja) * | 2003-12-04 | 2005-06-23 | Seinan Kogyo Kk | 三次元スパッタ成膜装置並びに方法 |
| JP2013206652A (ja) * | 2012-03-28 | 2013-10-07 | Nissin Electric Co Ltd | アンテナ装置、それを備えるプラズマ処理装置およびスパッタリング装置 |
| KR20140019577A (ko) * | 2012-08-06 | 2014-02-17 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 이를 이용한 박막 증착 방법 |
| JP2014057034A (ja) * | 2012-08-10 | 2014-03-27 | Dainippon Screen Mfg Co Ltd | 酸化アルミニウムの成膜方法 |
| JP6101533B2 (ja) * | 2013-03-27 | 2017-03-22 | 株式会社Screenホールディングス | 酸化アルミニウムの成膜方法 |
-
2014
- 2014-09-26 JP JP2014196266A patent/JP6264248B2/ja active Active
-
2015
- 2015-04-10 KR KR1020177010896A patent/KR20170058428A/ko not_active Ceased
- 2015-04-10 CN CN201580051441.7A patent/CN106715750B/zh active Active
- 2015-04-10 WO PCT/JP2015/061238 patent/WO2016047184A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN106715750A (zh) | 2017-05-24 |
| CN106715750B (zh) | 2019-02-15 |
| JP2016065299A (ja) | 2016-04-28 |
| KR20170058428A (ko) | 2017-05-26 |
| WO2016047184A1 (ja) | 2016-03-31 |
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