CN106715750B - 成膜方法及溅镀装置 - Google Patents

成膜方法及溅镀装置 Download PDF

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Publication number
CN106715750B
CN106715750B CN201580051441.7A CN201580051441A CN106715750B CN 106715750 B CN106715750 B CN 106715750B CN 201580051441 A CN201580051441 A CN 201580051441A CN 106715750 B CN106715750 B CN 106715750B
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China
Prior art keywords
target
plasma
antenna
frequency power
bias voltage
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CN201580051441.7A
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English (en)
Chinese (zh)
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CN106715750A (zh
Inventor
瀬戸口佳孝
岸田茂明
安东靖典
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Nissin Electric Co Ltd
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Nissin Electric Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN201580051441.7A 2014-09-26 2015-04-10 成膜方法及溅镀装置 Active CN106715750B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014196266A JP6264248B2 (ja) 2014-09-26 2014-09-26 成膜方法およびスパッタリング装置
JP2014-196266 2014-09-26
PCT/JP2015/061238 WO2016047184A1 (ja) 2014-09-26 2015-04-10 成膜方法およびスパッタリング装置

Publications (2)

Publication Number Publication Date
CN106715750A CN106715750A (zh) 2017-05-24
CN106715750B true CN106715750B (zh) 2019-02-15

Family

ID=55580725

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580051441.7A Active CN106715750B (zh) 2014-09-26 2015-04-10 成膜方法及溅镀装置

Country Status (4)

Country Link
JP (1) JP6264248B2 (enExample)
KR (1) KR20170058428A (enExample)
CN (1) CN106715750B (enExample)
WO (1) WO2016047184A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7061257B2 (ja) 2017-03-17 2022-04-28 日新電機株式会社 スパッタリング装置
JP6310601B1 (ja) 2017-06-07 2018-04-11 日新電機株式会社 スパッタリング装置
TWI684283B (zh) * 2017-06-07 2020-02-01 日商日新電機股份有限公司 薄膜電晶體的製造方法
JP6916699B2 (ja) * 2017-09-14 2021-08-11 株式会社Ｓｃｒｅｅｎホールディングス 成膜方法および成膜装置
JP6487611B1 (ja) 2017-12-27 2019-03-20 キヤノンアネルバ株式会社 成膜方法および成膜装置
JP2021088727A (ja) * 2018-03-20 2021-06-10 日新電機株式会社 成膜方法
CN111270209B (zh) * 2018-12-05 2023-12-12 东君新能源有限公司 一种蒸汽溅射装置及控制系统、控制方法
JP2020152968A (ja) * 2019-03-20 2020-09-24 日新電機株式会社 スパッタリング装置
GB2597985B (en) * 2020-08-13 2024-07-31 Dyson Technology Ltd Method of forming a cathode layer, method of forming a battery half cell
JP7740827B2 (ja) * 2021-10-20 2025-09-17 東京エレクトロン株式会社 スパッタ成膜装置及びスパッタ成膜方法
JP2024034664A (ja) * 2022-09-01 2024-03-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002069635A (ja) * 2000-09-05 2002-03-08 Ulvac Japan Ltd プラズマ発生装置並びにこの装置を利用した緻密な硬質薄膜の形成装置及び硬質薄膜の形成方法
JP2005163151A (ja) * 2003-12-04 2005-06-23 Seinan Kogyo Kk 三次元スパッタ成膜装置並びに方法
JP2013206652A (ja) * 2012-03-28 2013-10-07 Nissin Electric Co Ltd アンテナ装置、それを備えるプラズマ処理装置およびスパッタリング装置
CN103572242A (zh) * 2012-08-06 2014-02-12 三星显示有限公司 薄膜沉积设备和利用其沉积薄膜的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03193868A (ja) * 1989-12-21 1991-08-23 Toyota Motor Corp 薄膜の形成方法
JP2003183824A (ja) * 2001-12-12 2003-07-03 Matsushita Electric Ind Co Ltd スパッタ方法
JP2014057034A (ja) * 2012-08-10 2014-03-27 Dainippon Screen Mfg Co Ltd 酸化アルミニウムの成膜方法
JP6101533B2 (ja) * 2013-03-27 2017-03-22 株式会社Ｓｃｒｅｅｎホールディングス 酸化アルミニウムの成膜方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002069635A (ja) * 2000-09-05 2002-03-08 Ulvac Japan Ltd プラズマ発生装置並びにこの装置を利用した緻密な硬質薄膜の形成装置及び硬質薄膜の形成方法
JP2005163151A (ja) * 2003-12-04 2005-06-23 Seinan Kogyo Kk 三次元スパッタ成膜装置並びに方法
JP2013206652A (ja) * 2012-03-28 2013-10-07 Nissin Electric Co Ltd アンテナ装置、それを備えるプラズマ処理装置およびスパッタリング装置
CN103572242A (zh) * 2012-08-06 2014-02-12 三星显示有限公司 薄膜沉积设备和利用其沉积薄膜的方法

Also Published As

Publication number Publication date
KR20170058428A (ko) 2017-05-26
WO2016047184A1 (ja) 2016-03-31
JP6264248B2 (ja) 2018-01-24
CN106715750A (zh) 2017-05-24
JP2016065299A (ja) 2016-04-28

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