KR20160140660A - 반도체 발광 장치 및 광 반도체 실장용 기판 - Google Patents

반도체 발광 장치 및 광 반도체 실장용 기판 Download PDF

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KR20160140660A
KR20160140660A KR1020167026854A KR20167026854A KR20160140660A KR 20160140660 A KR20160140660 A KR 20160140660A KR 1020167026854 A KR1020167026854 A KR 1020167026854A KR 20167026854 A KR20167026854 A KR 20167026854A KR 20160140660 A KR20160140660 A KR 20160140660A
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South Korea
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degrees
diffraction
reflector
peak
degree
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Korean (ko)
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아키 기무라
가츠야 사카요리
게이 아마가이
사토루 간케
도시유키 사카이
도시마사 다카라베
마코토 미조시리
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다이니폰 인사츠 가부시키가이샤
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H01L33/58—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H01L33/02—
    • H01L33/52—
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H10H20/8506—Containers
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H01L2933/0033—
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
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    • H—ELECTRICITY
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    • H10H20/01—Manufacture or treatment
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    • H10H20/01—Manufacture or treatment
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    • H10H20/0364—Manufacture or treatment of packages of interconnections

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
KR1020167026854A 2014-03-31 2015-03-27 반도체 발광 장치 및 광 반도체 실장용 기판 Withdrawn KR20160140660A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2014-074828 2014-03-31
JP2014074828 2014-03-31
JP2015017933A JP5920497B2 (ja) 2014-03-31 2015-01-30 半導体発光装置及び光半導体実装用基板
JPJP-P-2015-017933 2015-01-30
PCT/JP2015/059784 WO2015152097A1 (ja) 2014-03-31 2015-03-27 半導体発光装置及び光半導体実装用基板

Publications (1)

Publication Number Publication Date
KR20160140660A true KR20160140660A (ko) 2016-12-07

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KR1020167026854A Withdrawn KR20160140660A (ko) 2014-03-31 2015-03-27 반도체 발광 장치 및 광 반도체 실장용 기판

Country Status (6)

Country Link
US (1) US10411174B2 (enExample)
JP (1) JP5920497B2 (enExample)
KR (1) KR20160140660A (enExample)
CN (1) CN106133929B (enExample)
TW (1) TW201601353A (enExample)
WO (1) WO2015152097A1 (enExample)

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KR102221601B1 (ko) * 2014-10-17 2021-03-02 엘지이노텍 주식회사 발광 소자 패키지 및 이를 포함하는 발광 모듈
US10164159B2 (en) * 2016-12-20 2018-12-25 Samsung Electronics Co., Ltd. Light-emitting diode package and method of manufacturing the same
JP2020055910A (ja) * 2018-09-28 2020-04-09 日亜化学工業株式会社 樹脂組成物、及び発光装置
WO2020232668A1 (en) * 2019-05-22 2020-11-26 Cree Huizhou Solid State Lighting Company Limited Arrangements for light emitting diode packages
TWI692816B (zh) * 2019-05-22 2020-05-01 友達光電股份有限公司 顯示裝置及其製作方法

Citations (4)

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JPH0560707A (ja) 1991-09-02 1993-03-12 Nippon Steel Corp 石炭の膨張性試験方法
WO2011027562A1 (ja) 2009-09-07 2011-03-10 株式会社クラレ Ｌｅｄ用反射板およびそれを備える発光装置
JP2011195709A (ja) 2010-03-19 2011-10-06 Sumitomo Electric Ind Ltd 白色樹脂成形体及びｌｅｄ用リフレクタ
JP2013166926A (ja) 2012-01-17 2013-08-29 Dainippon Printing Co Ltd 電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、及び成形体の製造方法

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JP2006070252A (ja) * 2004-08-03 2006-03-16 Mitsui Chemicals Inc ポリ４−メチル−１−ペンテン樹脂組成物、フィルムおよび電子部品封止体製造用型枠
JP5060707B2 (ja) 2004-11-10 2012-10-31 日立化成工業株式会社 光反射用熱硬化性樹脂組成物
CN101400492B (zh) * 2006-03-20 2012-07-25 三井化学株式会社 光学膜及其制造方法
JP2008144155A (ja) * 2006-11-14 2008-06-26 Mitsui Chemicals Inc ４−メチル−１−ペンテン系ランダム共重合体およびその製造方法ならびに該共重合体を含む組成物
JP5545246B2 (ja) * 2010-03-30 2014-07-09 信越化学工業株式会社 樹脂組成物及び発光半導体素子用リフレクター、及び発光半導体装置
US8704439B2 (en) * 2010-09-07 2014-04-22 Ube Material Industries, Ltd. Blue-light-emitting phosphor and light-emitting device equipped with the blue-light-emitting phosphor
JP2013077794A (ja) * 2011-09-16 2013-04-25 Sekisui Chem Co Ltd 光半導体装置
JP5970941B2 (ja) * 2012-04-27 2016-08-17 大日本印刷株式会社 光反射積層体及び半導体発光装置
JP2013243294A (ja) * 2012-05-22 2013-12-05 Kaneka Corp 半導体パッケージの製造方法
JP5932494B2 (ja) * 2012-06-01 2016-06-08 日亜化学工業株式会社 発光素子載置用基板及び発光装置
JP2014199285A (ja) * 2013-03-29 2014-10-23 積水化成品工業株式会社 光反射板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0560707A (ja) 1991-09-02 1993-03-12 Nippon Steel Corp 石炭の膨張性試験方法
WO2011027562A1 (ja) 2009-09-07 2011-03-10 株式会社クラレ Ｌｅｄ用反射板およびそれを備える発光装置
JP2011195709A (ja) 2010-03-19 2011-10-06 Sumitomo Electric Ind Ltd 白色樹脂成形体及びｌｅｄ用リフレクタ
JP2013166926A (ja) 2012-01-17 2013-08-29 Dainippon Printing Co Ltd 電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、及び成形体の製造方法

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JP2015201623A (ja) 2015-11-12
CN106133929A (zh) 2016-11-16
US10411174B2 (en) 2019-09-10
CN106133929B (zh) 2018-10-26
TW201601353A (zh) 2016-01-01
WO2015152097A1 (ja) 2015-10-08
US20170207376A1 (en) 2017-07-20
JP5920497B2 (ja) 2016-05-18

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