TW201601353A - 半導體發光裝置及光半導體安裝用基板 - Google Patents

半導體發光裝置及光半導體安裝用基板 Download PDF

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Publication number
TW201601353A
TW201601353A TW104110278A TW104110278A TW201601353A TW 201601353 A TW201601353 A TW 201601353A TW 104110278 A TW104110278 A TW 104110278A TW 104110278 A TW104110278 A TW 104110278A TW 201601353 A TW201601353 A TW 201601353A
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Taiwan
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degree
degrees
diffraction
reflection sheet
emitting device
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TW104110278A
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English (en)
Chinese (zh)
Inventor
木村安希
坂寄勝哉
天下井惠維
管家了
坂井俊之
財部俊正
溝尻誠
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大日本印刷股份有限公司
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Publication of TW201601353A publication Critical patent/TW201601353A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H10W72/0198—
    • H10W72/073—
    • H10W72/075—
    • H10W72/884—
    • H10W90/736—
    • H10W90/756—

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  • Led Device Packages (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW104110278A 2014-03-31 2015-03-30 半導體發光裝置及光半導體安裝用基板 TW201601353A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014074828 2014-03-31
JP2015017933A JP5920497B2 (ja) 2014-03-31 2015-01-30 半導体発光装置及び光半導体実装用基板

Publications (1)

Publication Number Publication Date
TW201601353A true TW201601353A (zh) 2016-01-01

Family

ID=54240420

Family Applications (1)

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TW104110278A TW201601353A (zh) 2014-03-31 2015-03-30 半導體發光裝置及光半導體安裝用基板

Country Status (6)

Country Link
US (1) US10411174B2 (enExample)
JP (1) JP5920497B2 (enExample)
KR (1) KR20160140660A (enExample)
CN (1) CN106133929B (enExample)
TW (1) TW201601353A (enExample)
WO (1) WO2015152097A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102221601B1 (ko) * 2014-10-17 2021-03-02 엘지이노텍 주식회사 발광 소자 패키지 및 이를 포함하는 발광 모듈
US10164159B2 (en) * 2016-12-20 2018-12-25 Samsung Electronics Co., Ltd. Light-emitting diode package and method of manufacturing the same
JP2020055910A (ja) * 2018-09-28 2020-04-09 日亜化学工業株式会社 樹脂組成物、及び発光装置
TWI692816B (zh) * 2019-05-22 2020-05-01 友達光電股份有限公司 顯示裝置及其製作方法
US12183720B2 (en) * 2019-05-22 2024-12-31 Creeled, Inc. Arrangements for light emitting diode packages

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0560707A (ja) 1991-09-02 1993-03-12 Nippon Steel Corp 石炭の膨張性試験方法
JP2006070252A (ja) * 2004-08-03 2006-03-16 Mitsui Chemicals Inc ポリ４−メチル−１−ペンテン樹脂組成物、フィルムおよび電子部品封止体製造用型枠
JP5060707B2 (ja) 2004-11-10 2012-10-31 日立化成工業株式会社 光反射用熱硬化性樹脂組成物
CN101400492B (zh) * 2006-03-20 2012-07-25 三井化学株式会社 光学膜及其制造方法
JP2008144155A (ja) * 2006-11-14 2008-06-26 Mitsui Chemicals Inc ４−メチル−１−ペンテン系ランダム共重合体およびその製造方法ならびに該共重合体を含む組成物
CN102482492B (zh) 2009-09-07 2015-09-30 可乐丽股份有限公司 Led用反射板以及具备其的发光装置
JP5416629B2 (ja) 2010-03-19 2014-02-12 住友電気工業株式会社 白色樹脂成形体及びｌｅｄ用リフレクタ
JP5545246B2 (ja) * 2010-03-30 2014-07-09 信越化学工業株式会社 樹脂組成物及び発光半導体素子用リフレクター、及び発光半導体装置
KR101789856B1 (ko) * 2010-09-07 2017-10-25 우베 고산 가부시키가이샤 청색 발광 형광체 및 그 청색 발광 형광체를 사용한 발광 장치
JP2013077794A (ja) 2011-09-16 2013-04-25 Sekisui Chem Co Ltd 光半導体装置
TWI634145B (zh) * 2012-01-17 2018-09-01 大日本印刷股份有限公司 電子線硬化性樹脂組成物、反射體用樹脂框架、反射體、半導體發光裝置及成形體之製造方法
JP5970941B2 (ja) * 2012-04-27 2016-08-17 大日本印刷株式会社 光反射積層体及び半導体発光装置
JP2013243294A (ja) 2012-05-22 2013-12-05 Kaneka Corp 半導体パッケージの製造方法
JP5932494B2 (ja) 2012-06-01 2016-06-08 日亜化学工業株式会社 発光素子載置用基板及び発光装置
JP2014199285A (ja) * 2013-03-29 2014-10-23 積水化成品工業株式会社 光反射板

Also Published As

Publication number Publication date
US10411174B2 (en) 2019-09-10
WO2015152097A1 (ja) 2015-10-08
JP2015201623A (ja) 2015-11-12
CN106133929B (zh) 2018-10-26
JP5920497B2 (ja) 2016-05-18
KR20160140660A (ko) 2016-12-07
US20170207376A1 (en) 2017-07-20
CN106133929A (zh) 2016-11-16

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