KR20150126774A - 밀봉막의 형성 방법 및 밀봉막 제조 장치 - Google Patents

밀봉막의 형성 방법 및 밀봉막 제조 장치 Download PDF

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Publication number
KR20150126774A
KR20150126774A KR1020150055112A KR20150055112A KR20150126774A KR 20150126774 A KR20150126774 A KR 20150126774A KR 1020150055112 A KR1020150055112 A KR 1020150055112A KR 20150055112 A KR20150055112 A KR 20150055112A KR 20150126774 A KR20150126774 A KR 20150126774A
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South Korea
Prior art keywords
sealing film
plasma
nitrogen
gas
silicon nitride
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KR1020150055112A
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English (en)
Korean (ko)
Inventor
데루유키 하야시
히라쿠 이시카와
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20150126774A publication Critical patent/KR20150126774A/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H01L51/5237—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H01L2251/56—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020150055112A 2014-04-21 2015-04-20 밀봉막의 형성 방법 및 밀봉막 제조 장치 KR20150126774A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014087267A JP6363385B2 (ja) 2014-04-21 2014-04-21 封止膜の形成方法及び封止膜製造装置
JPJP-P-2014-087267 2014-04-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020180074876A Division KR101994164B1 (ko) 2014-04-21 2018-06-28 밀봉막의 형성 방법

Publications (1)

Publication Number Publication Date
KR20150126774A true KR20150126774A (ko) 2015-11-13

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KR1020150055112A KR20150126774A (ko) 2014-04-21 2015-04-20 밀봉막의 형성 방법 및 밀봉막 제조 장치
KR1020180074876A KR101994164B1 (ko) 2014-04-21 2018-06-28 밀봉막의 형성 방법

Family Applications After (1)

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KR1020180074876A KR101994164B1 (ko) 2014-04-21 2018-06-28 밀봉막의 형성 방법

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Country Link
JP (1) JP6363385B2 (ja)
KR (2) KR20150126774A (ja)
TW (1) TWI621732B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018052477A2 (en) * 2016-09-15 2018-03-22 Applied Materials, Inc. An integrated method for wafer outgassing reduction
JP6924943B2 (ja) * 2017-05-12 2021-08-25 東京エレクトロン株式会社 成膜方法及び成膜装置
US10312475B2 (en) 2017-05-15 2019-06-04 Applied Materials, Inc. CVD thin film stress control method for display application
KR102333217B1 (ko) * 2017-07-25 2021-12-01 어플라이드 머티어리얼스, 인코포레이티드 개선된 박막 캡슐화
WO2020175152A1 (ja) * 2019-02-25 2020-09-03 株式会社アルバック プラズマｃｖｄ装置、および、プラズマｃｖｄ法
JP7346698B2 (ja) * 2019-07-15 2023-09-19 アプライド マテリアルズ インコーポレイテッド フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
JP2933422B2 (ja) * 1991-08-30 1999-08-16 キヤノン株式会社 プラズマ処理装置
JPH0562971A (ja) * 1991-09-02 1993-03-12 Fuji Electric Co Ltd 窒化シリコン膜の形成方法
JP3305826B2 (ja) 1993-08-23 2002-07-24 科学技術振興事業団 二酸化シリコン膜の化学気相堆積方法
EP0661732B1 (en) * 1993-12-28 2004-06-09 Applied Materials, Inc. A method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
JP3295336B2 (ja) * 1996-03-01 2002-06-24 キヤノン株式会社 マイクロ波プラズマ処理装置およびプラズマ処理方法
JP3836553B2 (ja) 1996-12-26 2006-10-25 独立行政法人科学技術振興機構 シリコン系絶縁膜の製造方法
KR100414611B1 (ko) * 1999-03-09 2004-01-07 동경 엘렉트론 주식회사 반도체 장치의 제조 방법
JP2003239071A (ja) * 2002-02-14 2003-08-27 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ成膜方法及び装置
TW200930135A (en) * 2007-08-31 2009-07-01 Tokyo Electron Ltd Organic electronic device, organic electronic device manufacturing method, organic electronic device manufacturing apparatus, substrate processing system, protection film structure and storage medium with control program stored therein
US7763551B2 (en) * 2008-03-31 2010-07-27 Tokyo Electron Limited RLSA CVD deposition control using halogen gas for hydrogen scavenging
JPWO2010038885A1 (ja) * 2008-09-30 2012-03-01 東京エレクトロン株式会社 窒化珪素膜およびその形成方法、コンピュータ読み取り可能な記憶媒体並びにプラズマｃｖｄ装置
JP2011077323A (ja) * 2009-09-30 2011-04-14 Tokyo Electron Ltd 窒化珪素膜の成膜方法および半導体メモリ装置の製造方法
JP5495940B2 (ja) * 2010-05-21 2014-05-21 三菱重工業株式会社 半導体素子の窒化珪素膜、窒化珪素膜の製造方法及び装置
JP5610850B2 (ja) * 2010-05-28 2014-10-22 三菱重工業株式会社 窒化珪素膜の製造方法及び装置
CN102948255B (zh) 2010-06-23 2015-05-13 东京毅力科创株式会社 密封膜形成方法和密封膜形成装置
JP5781350B2 (ja) * 2011-03-30 2015-09-24 リンテック株式会社 ガスバリア積層体、その製造方法、電子デバイス用部材及び電子デバイス
US8728955B2 (en) * 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
US8846536B2 (en) * 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
EP2823082B1 (en) * 2012-03-09 2024-05-15 Versum Materials US, LLC Barrier materials for display devices
JP2014060378A (ja) * 2012-08-23 2014-04-03 Tokyo Electron Ltd シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置

Also Published As

Publication number Publication date
KR20180080704A (ko) 2018-07-12
KR101994164B1 (ko) 2019-06-28
TW201602388A (zh) 2016-01-16
JP6363385B2 (ja) 2018-07-25
TWI621732B (zh) 2018-04-21
JP2015206076A (ja) 2015-11-19

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