TWI621732B - 密封膜之形成方法及密封膜製造裝置 - Google Patents

密封膜之形成方法及密封膜製造裝置 Download PDF

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Publication number
TWI621732B
TWI621732B TW104112307A TW104112307A TWI621732B TW I621732 B TWI621732 B TW I621732B TW 104112307 A TW104112307 A TW 104112307A TW 104112307 A TW104112307 A TW 104112307A TW I621732 B TWI621732 B TW I621732B
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TW
Taiwan
Prior art keywords
sealing film
nitrogen
plasma
forming
silicon nitride
Prior art date
Application number
TW104112307A
Other languages
English (en)
Chinese (zh)
Other versions
TW201602388A (zh
Inventor
Teruyuki Hayashi
Hiraku Ishikawa
Original Assignee
Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201602388A publication Critical patent/TW201602388A/zh
Application granted granted Critical
Publication of TWI621732B publication Critical patent/TWI621732B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
TW104112307A 2014-04-21 2015-04-17 密封膜之形成方法及密封膜製造裝置 TWI621732B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014087267A JP6363385B2 (ja) 2014-04-21 2014-04-21 封止膜の形成方法及び封止膜製造装置

Publications (2)

Publication Number Publication Date
TW201602388A TW201602388A (zh) 2016-01-16
TWI621732B true TWI621732B (zh) 2018-04-21

Family

ID=54603121

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104112307A TWI621732B (zh) 2014-04-21 2015-04-17 密封膜之形成方法及密封膜製造裝置

Country Status (3)

Country Link
JP (1) JP6363385B2 (ja)
KR (2) KR20150126774A (ja)
TW (1) TWI621732B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018052477A2 (en) * 2016-09-15 2018-03-22 Applied Materials, Inc. An integrated method for wafer outgassing reduction
JP6924943B2 (ja) * 2017-05-12 2021-08-25 東京エレクトロン株式会社 成膜方法及び成膜装置
US10312475B2 (en) * 2017-05-15 2019-06-04 Applied Materials, Inc. CVD thin film stress control method for display application
CN115172631A (zh) * 2017-07-25 2022-10-11 应用材料公司 改良的薄膜包封
JP6983332B2 (ja) * 2019-02-25 2021-12-17 株式会社アルバック プラズマｃｖｄ装置、および、プラズマｃｖｄ法
KR20220032608A (ko) * 2019-07-15 2022-03-15 어플라이드 머티어리얼스, 인코포레이티드 평판 디스플레이들을 위한 대면적 고밀도 플라즈마 프로세싱 챔버

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201030176A (en) * 2008-09-30 2010-08-16 Tokyo Electron Ltd Silicon nitride film and process for production thereof, computer-readable storage medium, and plasma cvd device
TW201348502A (zh) * 2012-02-14 2013-12-01 Novellus Systems Inc 用於電漿活化保形膜沉積之前驅物
TW201401372A (zh) * 2012-03-05 2014-01-01 Novellus Systems Inc 具有可調式溼蝕刻率之可流動氧化物膜
TW201402854A (zh) * 2012-03-09 2014-01-16 Air Prod & Chem 用於顯示裝置的阻絕物材料

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JP2933422B2 (ja) * 1991-08-30 1999-08-16 キヤノン株式会社 プラズマ処理装置
JPH0562971A (ja) * 1991-09-02 1993-03-12 Fuji Electric Co Ltd 窒化シリコン膜の形成方法
JP3305826B2 (ja) 1993-08-23 2002-07-24 科学技術振興事業団 二酸化シリコン膜の化学気相堆積方法
EP0661732B1 (en) * 1993-12-28 2004-06-09 Applied Materials, Inc. A method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
JP3295336B2 (ja) * 1996-03-01 2002-06-24 キヤノン株式会社 マイクロ波プラズマ処理装置およびプラズマ処理方法
JP3836553B2 (ja) 1996-12-26 2006-10-25 独立行政法人科学技術振興機構 シリコン系絶縁膜の製造方法
KR100414611B1 (ko) * 1999-03-09 2004-01-07 동경 엘렉트론 주식회사 반도체 장치의 제조 방법
JP2003239071A (ja) * 2002-02-14 2003-08-27 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ成膜方法及び装置
TW200930135A (en) * 2007-08-31 2009-07-01 Tokyo Electron Ltd Organic electronic device, organic electronic device manufacturing method, organic electronic device manufacturing apparatus, substrate processing system, protection film structure and storage medium with control program stored therein
US7763551B2 (en) * 2008-03-31 2010-07-27 Tokyo Electron Limited RLSA CVD deposition control using halogen gas for hydrogen scavenging
JP2011077323A (ja) * 2009-09-30 2011-04-14 Tokyo Electron Ltd 窒化珪素膜の成膜方法および半導体メモリ装置の製造方法
JP5495940B2 (ja) * 2010-05-21 2014-05-21 三菱重工業株式会社 半導体素子の窒化珪素膜、窒化珪素膜の製造方法及び装置
JP5610850B2 (ja) * 2010-05-28 2014-10-22 三菱重工業株式会社 窒化珪素膜の製造方法及び装置
WO2011162151A1 (ja) 2010-06-23 2011-12-29 東京エレクトロン株式会社 封止膜形成方法、封止膜形成装置、有機発光素子
JP5781350B2 (ja) * 2011-03-30 2015-09-24 リンテック株式会社 ガスバリア積層体、その製造方法、電子デバイス用部材及び電子デバイス
JP2014060378A (ja) * 2012-08-23 2014-04-03 Tokyo Electron Ltd シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201030176A (en) * 2008-09-30 2010-08-16 Tokyo Electron Ltd Silicon nitride film and process for production thereof, computer-readable storage medium, and plasma cvd device
TW201348502A (zh) * 2012-02-14 2013-12-01 Novellus Systems Inc 用於電漿活化保形膜沉積之前驅物
TW201401372A (zh) * 2012-03-05 2014-01-01 Novellus Systems Inc 具有可調式溼蝕刻率之可流動氧化物膜
TW201402854A (zh) * 2012-03-09 2014-01-16 Air Prod & Chem 用於顯示裝置的阻絕物材料

Also Published As

Publication number Publication date
JP2015206076A (ja) 2015-11-19
TW201602388A (zh) 2016-01-16
KR101994164B1 (ko) 2019-06-28
KR20150126774A (ko) 2015-11-13
KR20180080704A (ko) 2018-07-12
JP6363385B2 (ja) 2018-07-25

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