KR20150103661A - 나노와이어 led 구조 및 이를 제조하는 방법 - Google Patents
나노와이어 led 구조 및 이를 제조하는 방법 Download PDFInfo
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- KR20150103661A KR20150103661A KR1020157013688A KR20157013688A KR20150103661A KR 20150103661 A KR20150103661 A KR 20150103661A KR 1020157013688 A KR1020157013688 A KR 1020157013688A KR 20157013688 A KR20157013688 A KR 20157013688A KR 20150103661 A KR20150103661 A KR 20150103661A
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- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrodes Of Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261719108P | 2012-10-26 | 2012-10-26 | |
| US61/719,108 | 2012-10-26 | ||
| PCT/US2013/066129 WO2014066357A1 (en) | 2012-10-26 | 2013-10-22 | Nanowire led structure and method for manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20150103661A true KR20150103661A (ko) | 2015-09-11 |
Family
ID=50545178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157013688A Ceased KR20150103661A (ko) | 2012-10-26 | 2013-10-22 | 나노와이어 led 구조 및 이를 제조하는 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9076945B2 (enExample) |
| EP (1) | EP2912700A4 (enExample) |
| JP (1) | JP6353845B2 (enExample) |
| KR (1) | KR20150103661A (enExample) |
| TW (1) | TWI601310B (enExample) |
| WO (1) | WO2014066357A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200088934A (ko) * | 2019-01-15 | 2020-07-24 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
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| US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
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| US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
| US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
| US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
| US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
| US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
| US20160005892A1 (en) * | 2014-07-02 | 2016-01-07 | Zena Technologies, Inc. | Vertical pillar structure photovoltaic devices and method for making the same |
| US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
| US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
| US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
| WO2014066379A1 (en) | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
| JP6322197B2 (ja) | 2012-10-26 | 2018-05-09 | グロ アーベーGlo Ab | ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。 |
| WO2014066357A1 (en) | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire led structure and method for manufacturing the same |
| FR3000294B1 (fr) * | 2012-12-21 | 2016-03-04 | Aledia | Support fonctionnel comprenant des nanofils et des nano-empreintes et procede de fabrication dudit support |
| US9972750B2 (en) * | 2013-12-13 | 2018-05-15 | Glo Ab | Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs |
| WO2016022824A1 (en) * | 2014-08-08 | 2016-02-11 | Glo Ab | Pixilated display device based upon nanowire leds and method for making the same |
| KR102223036B1 (ko) | 2014-08-18 | 2021-03-05 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| KR20160027610A (ko) * | 2014-09-01 | 2016-03-10 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| WO2016049507A1 (en) | 2014-09-26 | 2016-03-31 | Glo Ab | Monolithic image chip for near-to-eye display |
| DE102015121554B4 (de) * | 2015-12-10 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| EP3508893B1 (en) * | 2016-08-31 | 2023-01-11 | Riken | Light absorbing body, bolometer, infrared ray absorbing body, solar thermal power generating device, radiant cooling film, and method for manufacturing light absorbing body |
| FR3061608B1 (fr) * | 2016-12-29 | 2019-05-31 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
| JP7007547B2 (ja) * | 2017-04-11 | 2022-01-24 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| US10418499B2 (en) | 2017-06-01 | 2019-09-17 | Glo Ab | Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof |
| KR102345618B1 (ko) * | 2017-09-01 | 2021-12-31 | 삼성전자주식회사 | 발광 다이오드 및 그의 제조 방법 |
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| CN114300604B (zh) * | 2021-12-27 | 2024-02-20 | 中国电子科技集团公司第五十五研究所 | 一种高分辨率Micro-LED微显示器件的高容差铟柱及其制备方法 |
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2013
- 2013-10-22 WO PCT/US2013/066129 patent/WO2014066357A1/en not_active Ceased
- 2013-10-22 US US14/059,629 patent/US9076945B2/en not_active Expired - Fee Related
- 2013-10-22 KR KR1020157013688A patent/KR20150103661A/ko not_active Ceased
- 2013-10-22 EP EP13849416.6A patent/EP2912700A4/en not_active Withdrawn
- 2013-10-22 JP JP2015539711A patent/JP6353845B2/ja active Active
- 2013-10-25 TW TW102138763A patent/TWI601310B/zh not_active IP Right Cessation
-
2015
- 2015-04-24 US US14/695,193 patent/US9231161B2/en not_active Expired - Fee Related
- 2015-12-17 US US14/973,394 patent/US20160211406A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200088934A (ko) * | 2019-01-15 | 2020-07-24 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
| US11984470B2 (en) | 2019-01-15 | 2024-05-14 | Samsung Display Co., Ltd. | Light-emitting diode and display device comprising same |
Also Published As
| Publication number | Publication date |
|---|---|
| US20160211406A1 (en) | 2016-07-21 |
| TWI601310B (zh) | 2017-10-01 |
| EP2912700A4 (en) | 2016-04-06 |
| US9076945B2 (en) | 2015-07-07 |
| TW201424041A (zh) | 2014-06-16 |
| JP6353845B2 (ja) | 2018-07-04 |
| US20150263237A1 (en) | 2015-09-17 |
| WO2014066357A1 (en) | 2014-05-01 |
| US20140117401A1 (en) | 2014-05-01 |
| EP2912700A1 (en) | 2015-09-02 |
| JP2016500925A (ja) | 2016-01-14 |
| US9231161B2 (en) | 2016-01-05 |
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