JP6353845B2 - ナノワイヤｌｅｄ構造の製造方法 - Google Patents

ナノワイヤｌｅｄ構造の製造方法 Download PDF

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JP6353845B2
JP6353845B2 JP2015539711A JP2015539711A JP6353845B2 JP 6353845 B2 JP6353845 B2 JP 6353845B2 JP 2015539711 A JP2015539711 A JP 2015539711A JP 2015539711 A JP2015539711 A JP 2015539711A JP 6353845 B2 JP6353845 B2 JP 6353845B2
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nanowire
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shell
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JP2016500925A5 (enExample
JP2016500925A (ja
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スコット ブラッド ハーナー，
スコット ブラッド ハーナー，
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
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    • H10H20/80—Constructional details
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    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
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    • H10H20/80—Constructional details
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    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
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    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
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    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
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    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
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    • H10H20/80—Constructional details
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    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
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    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
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    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/205—Nanosized electrodes, e.g. nanowire electrodes
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/01—Manufacture or treatment
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    • H10H20/01—Manufacture or treatment
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3462—Nanowires
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    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0554—Manufacture or treatment of conductive parts of the interconnections of nanotubes or nanowires
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  • Led Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2015539711A 2012-10-26 2013-10-22 ナノワイヤｌｅｄ構造の製造方法 Active JP6353845B2 (ja)

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Application Number Priority Date Filing Date Title
US201261719108P 2012-10-26 2012-10-26
US61/719,108 2012-10-26
PCT/US2013/066129 WO2014066357A1 (en) 2012-10-26 2013-10-22 Nanowire led structure and method for manufacturing the same

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JP2016500925A JP2016500925A (ja) 2016-01-14
JP2016500925A5 JP2016500925A5 (enExample) 2016-12-01
JP6353845B2 true JP6353845B2 (ja) 2018-07-04

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US (3) US9076945B2 (enExample)
EP (1) EP2912700A4 (enExample)
JP (1) JP6353845B2 (enExample)
KR (1) KR20150103661A (enExample)
TW (1) TWI601310B (enExample)
WO (1) WO2014066357A1 (enExample)

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US9231161B2 (en) 2016-01-05
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