TWI601310B - 奈米線發光二極體結構及其製造方法 - Google Patents

奈米線發光二極體結構及其製造方法 Download PDF

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TWI601310B
TWI601310B TW102138763A TW102138763A TWI601310B TW I601310 B TWI601310 B TW I601310B TW 102138763 A TW102138763 A TW 102138763A TW 102138763 A TW102138763 A TW 102138763A TW I601310 B TWI601310 B TW I601310B
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layer
electrode
region
nanowires
nanowire
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TW102138763A
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TW201424041A (zh
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史考特 布萊德 海納
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Glo公司
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Electrodes Of Semiconductors (AREA)
TW102138763A 2012-10-26 2013-10-25 奈米線發光二極體結構及其製造方法 TWI601310B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261719108P 2012-10-26 2012-10-26
US14/059,629 US9076945B2 (en) 2012-10-26 2013-10-22 Nanowire LED structure and method for manufacturing the same

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TW201424041A TW201424041A (zh) 2014-06-16
TWI601310B true TWI601310B (zh) 2017-10-01

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US (3) US9076945B2 (enExample)
EP (1) EP2912700A4 (enExample)
JP (1) JP6353845B2 (enExample)
KR (1) KR20150103661A (enExample)
TW (1) TWI601310B (enExample)
WO (1) WO2014066357A1 (enExample)

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