KR20150013627A - Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치 - Google Patents

Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치 Download PDF

Info

Publication number
KR20150013627A
KR20150013627A KR1020147033299A KR20147033299A KR20150013627A KR 20150013627 A KR20150013627 A KR 20150013627A KR 1020147033299 A KR1020147033299 A KR 1020147033299A KR 20147033299 A KR20147033299 A KR 20147033299A KR 20150013627 A KR20150013627 A KR 20150013627A
Authority
KR
South Korea
Prior art keywords
chuck
processing chamber
bonding material
protective
electrostatic chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020147033299A
Other languages
English (en)
Korean (ko)
Inventor
싱 린
제니퍼 와이. 선
수만트 반다
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20150013627A publication Critical patent/KR20150013627A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/02Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
    • B32B3/04Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by at least one layer folded at the edge, e.g. over another layer ; characterised by at least one layer enveloping or enclosing a material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/02Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
    • B32B3/08Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/23Sheet including cover or casing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/23Sheet including cover or casing
    • Y10T428/239Complete cover or casing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Engineering (AREA)
KR1020147033299A 2012-04-26 2012-09-21 Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치 Ceased KR20150013627A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261638908P 2012-04-26 2012-04-26
US61/638,908 2012-04-26
PCT/US2012/056617 WO2013162641A1 (en) 2012-04-26 2012-09-21 Methods and apparatus toward preventing esc bonding adhesive erosion

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020177026402A Division KR20170109690A (ko) 2012-04-26 2012-09-21 Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
KR1020197031915A Division KR20190124348A (ko) 2012-04-26 2012-09-21 Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치

Publications (1)

Publication Number Publication Date
KR20150013627A true KR20150013627A (ko) 2015-02-05

Family

ID=49477073

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020147033299A Ceased KR20150013627A (ko) 2012-04-26 2012-09-21 Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
KR1020177026402A Ceased KR20170109690A (ko) 2012-04-26 2012-09-21 Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
KR1020227033028A Active KR102780538B1 (ko) 2012-04-26 2012-09-21 Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
KR1020197031915A Ceased KR20190124348A (ko) 2012-04-26 2012-09-21 Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020177026402A Ceased KR20170109690A (ko) 2012-04-26 2012-09-21 Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
KR1020227033028A Active KR102780538B1 (ko) 2012-04-26 2012-09-21 Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
KR1020197031915A Ceased KR20190124348A (ko) 2012-04-26 2012-09-21 Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치

Country Status (6)

Country Link
US (2) US8982530B2 (enExample)
JP (2) JP6180510B2 (enExample)
KR (4) KR20150013627A (enExample)
CN (2) CN104247003B (enExample)
TW (1) TWI578436B (enExample)
WO (1) WO2013162641A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180042223A (ko) * 2015-08-27 2018-04-25 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
KR20240083131A (ko) * 2013-12-26 2024-06-11 램 리써치 코포레이션 하부 전극 어셈블리용 에지 시일

Families Citing this family (140)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
JP5985316B2 (ja) * 2012-09-07 2016-09-06 東京エレクトロン株式会社 プラズマエッチング装置
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
JP6140457B2 (ja) * 2013-01-21 2017-05-31 東京エレクトロン株式会社 接着方法、載置台及び基板処理装置
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
JP6400273B2 (ja) * 2013-03-11 2018-10-03 新光電気工業株式会社 静電チャック装置
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
KR102197189B1 (ko) * 2013-05-28 2020-12-31 주성엔지니어링(주) 기판 지지 장치
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
CN107258012B (zh) * 2015-03-20 2021-04-16 应用材料公司 以高温聚合物接合剂接合至金属基底的陶瓷静电夹盘
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10770270B2 (en) 2016-06-07 2020-09-08 Applied Materials, Inc. High power electrostatic chuck with aperture-reducing plug in a gas hole
JP6606017B2 (ja) * 2016-06-07 2019-11-13 株式会社荏原製作所 基板処理装置
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US20180005867A1 (en) * 2016-07-01 2018-01-04 Lam Research Corporation Esc ceramic sidewall modification for particle and metals performance enhancements
US20180019104A1 (en) * 2016-07-14 2018-01-18 Applied Materials, Inc. Substrate processing chamber component assembly with plasma resistant seal
KR101758347B1 (ko) * 2016-08-01 2017-07-18 주식회사 엘케이엔지니어링 정전 척 및 리페어 방법
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
JP6664298B2 (ja) 2016-09-09 2020-03-13 株式会社バルカー シール材
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10943808B2 (en) 2016-11-25 2021-03-09 Applied Materials, Inc. Ceramic electrostatic chuck having a V-shape seal band
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US11776822B2 (en) * 2018-05-29 2023-10-03 Applied Materials, Inc. Wet cleaning of electrostatic chuck
US11456161B2 (en) * 2018-06-04 2022-09-27 Applied Materials, Inc. Substrate support pedestal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
CN110875230B (zh) * 2018-08-29 2022-06-14 北京华卓精科科技股份有限公司 静电卡盘保护结构、灌胶装置以及灌胶工艺
CN110890305B (zh) * 2018-09-10 2022-06-14 北京华卓精科科技股份有限公司 静电卡盘
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
JP6700362B2 (ja) * 2018-09-28 2020-05-27 日本特殊陶業株式会社 半導体製造用部品
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
JP7203585B2 (ja) * 2018-12-06 2023-01-13 東京エレクトロン株式会社 基板支持器、基板処理装置、基板処理システム、及び基板支持器における接着剤の浸食を検出する方法
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN111863699B (zh) * 2019-04-28 2023-12-22 北京北方华创微电子装备有限公司 承载装置及工艺腔室
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
JP7339062B2 (ja) * 2019-08-09 2023-09-05 東京エレクトロン株式会社 載置台及び基板処理装置
JP7353106B2 (ja) * 2019-09-09 2023-09-29 日本特殊陶業株式会社 保持装置
JP7281374B2 (ja) * 2019-09-09 2023-05-25 日本特殊陶業株式会社 保持装置および保持装置の製造方法
KR102688688B1 (ko) 2019-10-10 2024-07-25 엘지전자 주식회사 영상을 압축 또는 복원하기 위한 방법 및 장치
JP7445420B2 (ja) * 2019-12-23 2024-03-07 日本特殊陶業株式会社 半導体製造装置用部品
JP7308767B2 (ja) 2020-01-08 2023-07-14 東京エレクトロン株式会社 載置台およびプラズマ処理装置
JP7521903B2 (ja) * 2020-02-21 2024-07-24 株式会社巴川コーポレーション 静電チャック装置
KR102817778B1 (ko) 2020-04-29 2025-06-05 어플라이드 머티어리얼스, 인코포레이티드 균일성 개선을 위한 히터 커버 플레이트
JP7509586B2 (ja) * 2020-06-17 2024-07-02 日本特殊陶業株式会社 保持装置
JP7667638B2 (ja) * 2020-07-16 2025-04-23 日本特殊陶業株式会社 保持装置
CN115803868A (zh) * 2020-07-22 2023-03-14 应用材料公司 基板支撑件中的升降销接口
KR102644585B1 (ko) 2020-08-21 2024-03-06 세메스 주식회사 기판 처리 장치 및 이의 제조 방법
JP7577524B2 (ja) * 2020-12-11 2024-11-05 日本特殊陶業株式会社 保持装置
JP7674912B2 (ja) * 2021-05-21 2025-05-12 日本特殊陶業株式会社 保持装置
JP7710891B2 (ja) * 2021-05-21 2025-07-22 日本特殊陶業株式会社 保持装置
JP7425034B2 (ja) * 2021-12-01 2024-01-30 三菱電線工業株式会社 保護リング、それを備えた接着面保護構造、及び接着面保護方法
KR102802671B1 (ko) * 2021-12-01 2025-05-07 주식회사 유진테크 리프트핀 프로텍션 어셈블리 및 기판 처리 장치
US12469733B2 (en) * 2021-12-14 2025-11-11 Applied Materials, Inc. Wafer to baseplate arc prevention using textured dielectric
WO2025004883A1 (ja) * 2023-06-29 2025-01-02 東京エレクトロン株式会社 プラズマ処理装置
US20250075795A1 (en) * 2023-08-28 2025-03-06 Applied Materials, Inc. Seal assembly with a retaining mechanism
WO2025122428A1 (en) * 2023-12-04 2025-06-12 Lam Research Corporation Ceramic top plate with an annular projection to protect a seal ring and a bonding layer of a substrate support from ion erosion

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11191534A (ja) * 1997-12-25 1999-07-13 Kyocera Corp ウエハ支持部材
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
JP2001308165A (ja) * 2000-04-19 2001-11-02 Sumitomo Osaka Cement Co Ltd サセプタ及びその製造方法
JP4515652B2 (ja) * 2001-03-09 2010-08-04 パナソニック株式会社 プラズマ処理装置
JP2003060019A (ja) * 2001-08-13 2003-02-28 Hitachi Ltd ウエハステージ
JP3881908B2 (ja) * 2002-02-26 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4034145B2 (ja) * 2002-08-09 2008-01-16 住友大阪セメント株式会社 サセプタ装置
WO2004084298A1 (ja) * 2003-03-19 2004-09-30 Tokyo Electron Limited 静電チャックを用いた基板保持機構およびその製造方法
JP4397271B2 (ja) * 2003-05-12 2010-01-13 東京エレクトロン株式会社 処理装置
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
JP4458995B2 (ja) * 2004-09-10 2010-04-28 京セラ株式会社 ウェハ支持部材
US7431788B2 (en) * 2005-07-19 2008-10-07 Lam Research Corporation Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system
JP2007110023A (ja) * 2005-10-17 2007-04-26 Shinko Electric Ind Co Ltd 基板保持装置
CN1851896A (zh) * 2005-12-05 2006-10-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种静电卡盘
JP4942471B2 (ja) * 2005-12-22 2012-05-30 京セラ株式会社 サセプタおよびこれを用いたウェハの処理方法
US7651571B2 (en) * 2005-12-22 2010-01-26 Kyocera Corporation Susceptor
US7718029B2 (en) * 2006-08-01 2010-05-18 Applied Materials, Inc. Self-passivating plasma resistant material for joining chamber components
JP5016510B2 (ja) * 2007-02-09 2012-09-05 日本碍子株式会社 半導体支持装置
JP4951536B2 (ja) * 2007-03-27 2012-06-13 東京エレクトロン株式会社 基板載置台及び基板処理装置
US7667944B2 (en) * 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
KR101553423B1 (ko) * 2007-12-19 2015-09-15 램 리써치 코포레이션 반도체 진공 프로세싱 장치용 필름 점착제
JP5049891B2 (ja) * 2008-06-13 2012-10-17 新光電気工業株式会社 基板温調固定装置
US9543181B2 (en) * 2008-07-30 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Replaceable electrostatic chuck sidewall shield
US8652260B2 (en) * 2008-08-08 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for holding semiconductor wafers
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US8313664B2 (en) * 2008-11-21 2012-11-20 Applied Materials, Inc. Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber
JP3154629U (ja) * 2009-08-04 2009-10-22 日本碍子株式会社 静電チャック
KR20110055837A (ko) * 2009-11-20 2011-05-26 삼성전자주식회사 정전 척
JP5423632B2 (ja) * 2010-01-29 2014-02-19 住友大阪セメント株式会社 静電チャック装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240083131A (ko) * 2013-12-26 2024-06-11 램 리써치 코포레이션 하부 전극 어셈블리용 에지 시일
KR20180042223A (ko) * 2015-08-27 2018-04-25 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치

Also Published As

Publication number Publication date
CN104247003B (zh) 2018-06-15
CN104247003A (zh) 2014-12-24
JP2017208562A (ja) 2017-11-24
JP6180510B2 (ja) 2017-08-16
US20130286530A1 (en) 2013-10-31
KR102780538B1 (ko) 2025-03-11
US20150183187A1 (en) 2015-07-02
KR20170109690A (ko) 2017-09-29
KR20220146554A (ko) 2022-11-01
JP2015515760A (ja) 2015-05-28
CN107527854A (zh) 2017-12-29
TW201344837A (zh) 2013-11-01
US8982530B2 (en) 2015-03-17
TWI578436B (zh) 2017-04-11
WO2013162641A1 (en) 2013-10-31
KR20190124348A (ko) 2019-11-04

Similar Documents

Publication Publication Date Title
KR102780538B1 (ko) Esc 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
JP6728196B2 (ja) 高温ポリマー接合によって金属ベースに接合されたセラミックス静電チャック
CN110556316B (zh) 基板支撑基座
TWI786067B (zh) 具有v形密封帶的陶瓷靜電吸盤
TWI755817B (zh) 用於高溫製程之基板支撐組件
KR101826987B1 (ko) 기판 처리 장치의 기판 탑재대
US11894255B2 (en) Sheath and temperature control of process kit
KR20180054892A (ko) 감소된 배면 플라즈마 점화를 갖는 샤워헤드
US20150059974A1 (en) Method of processing a substrate support assembly
TWI765892B (zh) 具有增強邊緣密封的用於高功率之工件載體
CN114303226B (zh) 用于处理腔室的高传导性下部屏蔽件
WO2025071902A1 (en) Metal bonded esc with outer ceramic vacuum isolation ring for cryogenic service

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20141126

Patent event code: PA01051R01D

Comment text: International Patent Application

AMND Amendment
PG1501 Laying open of application
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20170919

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20170919

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20171219

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20180628

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20171219

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20180628

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20180219

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20150102

Comment text: Amendment to Specification, etc.

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20181031

Patent event code: PE09021S02D

PX0601 Decision of rejection after re-examination

Comment text: Decision to Refuse Application

Patent event code: PX06014S01D

Patent event date: 20190828

Comment text: Final Notice of Reason for Refusal

Patent event code: PX06013S02I

Patent event date: 20181031

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20180927

Comment text: Decision to Refuse Application

Patent event code: PX06011S01I

Patent event date: 20180628

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20180219

Comment text: Notification of reason for refusal

Patent event code: PX06013S01I

Patent event date: 20171219

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20150102

A107 Divisional application of patent
J201 Request for trial against refusal decision
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20191028

PJ0201 Trial against decision of rejection

Patent event date: 20191028

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20190828

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Patent event date: 20180628

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20200917

Appeal identifier: 2019101003563

Request date: 20191028

J301 Trial decision

Free format text: TRIAL NUMBER: 2019101003563; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20191028

Effective date: 20200917

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20200917

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20191028

Decision date: 20200917

Appeal identifier: 2019101003563

J121 Written withdrawal of request for trial
PC1202 Submission of document of withdrawal before decision of registration

Comment text: [Withdrawal of Procedure relating to Patent, etc.] Withdrawal (Abandonment)

Patent event code: PC12021R01D

Patent event date: 20200924

PJ1201 Withdrawal of trial

Patent event code: PJ12011R01D

Patent event date: 20200924

Comment text: Written Withdrawal of Request for Trial

Appeal identifier: 2019101003563

Request date: 20191028

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20200917

WITB Written withdrawal of application