TWI786067B - 具有v形密封帶的陶瓷靜電吸盤 - Google Patents
具有v形密封帶的陶瓷靜電吸盤 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000001816 cooling Methods 0.000 claims abstract description 52
- 239000012790 adhesive layer Substances 0.000 claims abstract description 29
- 239000010410 layer Substances 0.000 claims abstract description 23
- 238000007789 sealing Methods 0.000 claims description 92
- 239000000463 material Substances 0.000 claims description 19
- 229920006169 Perfluoroelastomer Polymers 0.000 claims description 7
- 239000000945 filler Substances 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 2
- 239000011800 void material Substances 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 230000003628 erosive effect Effects 0.000 description 6
- -1 perfluoro compound Chemical class 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 239000013529 heat transfer fluid Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013536 elastomeric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- BLTXWCKMNMYXEA-UHFFFAOYSA-N 1,1,2-trifluoro-2-(trifluoromethoxy)ethene Chemical compound FC(F)=C(F)OC(F)(F)F BLTXWCKMNMYXEA-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920006355 Tefzel Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229920006247 high-performance elastomer Polymers 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920006260 polyaryletherketone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
- F16B47/00—Suction cups for attaching purposes; Equivalent means using adhesives
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J15/00—Sealings
- F16J15/02—Sealings between relatively-stationary surfaces
- F16J15/021—Sealings between relatively-stationary surfaces with elastic packing
- F16J15/022—Sealings between relatively-stationary surfaces with elastic packing characterised by structure or material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J15/00—Sealings
- F16J15/02—Sealings between relatively-stationary surfaces
- F16J15/06—Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces
- F16J15/10—Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces with non-metallic packing
- F16J15/102—Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces with non-metallic packing characterised by material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J15/00—Sealings
- F16J15/02—Sealings between relatively-stationary surfaces
- F16J15/06—Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces
- F16J15/10—Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces with non-metallic packing
- F16J15/104—Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces with non-metallic packing characterised by structure
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
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Abstract
本案所述之實施提供包括密封帶的基板支撐組件。密封帶保護設置在靜電吸盤(ESC)和基板支撐組件的冷卻板之間的黏著層。在一個實例中,基板支撐組件包括靜電吸盤和冷卻板。接合層將靜電吸盤的底表面固定於冷卻板的頂表面。接合層具有黏著層和密封帶。密封帶圍繞並保護黏著層。密封帶具有環形主體。環形主體具有頂表面,該頂表面藉由內表面與外表面連接至底表面。頂表面和底表面與內表面成角度小於85度。外表面具有形成在其中的凹部。
Description
本案所述的實施一般係關於半導體製造,且更具體地係關於適用於高溫半導體製造的基板支撐組件。
可靠地生產奈米和更小的特徵係對於半導體元件的下一代超大型積體電路(VLSI)和極大型積體電路(ULSI)的關鍵技術挑戰之一。然而,隨著電路技術的限制被推動,VLSI和ULSI互連技術的尺寸縮小已在處理能力上有額外的需求。在基板上可靠地形成閘結構對於VLSI和ULSI的成功是重要的且對持續努力增加電路密度和個別基板的品質和晶粒是重要的。
為了降低製造成本,積體晶片(IC)製造商需要更高的產量以及從每個經處理的矽基板有更好的元件產率和效能。傳統的靜電吸盤(ESC)通常接合基板支撐組件中的冷卻板。可用密封件保護該接合。然而,由於ESC和冷卻板之間的最小表面接觸,密封件僅提供邊緣保護。一旦密封件受損(compromised),由於氟自由基滲透蝕刻掉黏著層,靜電吸盤可能會遇到基板支撐組件內的接合問題。接合材料的損失加速了ESC自冷卻板分層(delamination)。此外,受損的密封件可能導致
接合材料排出到處理體積中,從而導致腔室中的污染。腔室可能需要停機時間來修理或更換基板支撐組件,而影響到成本、產量和效能。
因此,需要改善基板支撐組件。
本案所述之實施提供具有保護接合層的密封帶的基板支撐組件。基板支撐組件包括靜電吸盤、冷卻板及接合層,該靜電吸盤具有工件支撐表面和底表面,該冷卻板具有頂表面,該接合層固定該靜電吸盤的該底表面和該冷卻板的該頂表面。接合層具有黏著層和密封帶,該密封帶圍繞(circumscribing)該黏著層。密封帶在靜電吸盤和冷卻板之間提供密封。密封帶具有環形主體。主體具有內表面、頂表面與底表面、及外表面,該頂表面和該底表面由該內表面連接至該頂表面。頂表面和底表面與內表面成角度小於85度。外表面形成於其中的凹部(indent)。外表面將頂表面連接至底表面。
本案所述之實施提供包括密封帶的基板支撐組件。密封帶保護設置在靜電吸盤(ESC)和基板支撐組件的冷卻板之間的黏著層。密封帶對於暴露在高溫操作的ESC應用尤其有利。高溫是指超過約攝氏150度的溫度,例如超過約攝氏250度的溫度,如約攝氏250度至約攝氏300度的溫度。密封帶設置在結合層的外周,以防止接合材料釋氣或被惡劣腔室環境室攻擊。密封帶經配置具有增加的接觸面積,以用於保持密封的完整性和使用壽命。儘管下面所述基板支撐組件在蝕刻處理腔室中,但是基板支撐組件可用於其他類型的電漿處理腔室中,如物理氣相沉積腔室、化學氣相沉積腔室、離子植入腔室等及需要保護接合層的其他系統中。
圖1是具有基板支撐組件126的示範電漿處理腔室100(所示經配置為蝕刻腔室)的截面示意性側視圖。基板支撐組件126可用於其他類型的處理電漿腔室中,例如電漿處理腔室、退火腔室、物理氣相沉積腔室、化學氣相沉積腔室和離子植入腔室等及其他需要有能力為表面或工件(如基板)控制處理均勻性的系統。在高溫範圍內控制針對基板支撐件的介電性質tan(δ)(即介電損耗)或ρ(即體積電阻率)且有利地使基板支撐件上的基板124能夠有方位角處理均勻性。
電漿處理腔室100包括腔室主體102,腔室主體102具有包圍處理區域110的側壁104、底部106和蓋件108。注入設備112耦接至腔室主體102的側壁104和(或)蓋件108。氣體板114耦接至注入設備112以允許將處理氣體提供到處理區域110中。注入設備112可以是一個或更多個噴嘴或入口端口,或者是噴頭。處理氣體以及任何處理副產物透過在腔室主體102的側壁104或底部106中形成的排氣口128從處理區域110中去除。排氣口128耦接至泵送系統132,泵送系統132包括用於控制處理區域110內的真空位準的節流閥和泵。
處理氣體可被激發(energized)以在處理區域110內形成電漿。處理氣體可被與處理氣體電容耦合或電感耦合的RF功率激發。在圖1所示的實施例中,複數個線圈116設置在電漿處理腔室100的蓋件108上方,且透過匹配電路118耦接至RF功率120。
基板支撐組件126設置在注入設備112下方的處理區域110中。基板支撐組件126包括靜電吸盤174和冷卻板130。冷卻板130由底板176支撐。底板176由處理腔室的側壁104或底部106之一來支撐。基板支撐組件126可另外包括加熱器組件(未圖示)。此外,基板支撐組件126可包括設置在冷卻板130和底板176之間的設施板145和(或)絕緣器板(未圖示)。
冷卻板130可由金屬材料或其他合適的材料形成。例如,冷卻板130可由鋁(Al)形成。冷卻板130可包括形成在其中的冷卻通道190。冷卻通道190可連接到傳熱流體源122。傳熱流體源122提供傳熱流體(如液體、氣體或其組合),傳熱流體循環通過設置在冷卻板130中的一個或更多個冷卻通道190。流過相鄰冷卻通道190的流體可經隔離而能夠對靜電吸盤174和冷卻板130的不同區域之間的傳熱作局部控制,這有助於控制基板124的橫向溫度分佈。在一個實施例中,循環通過冷卻板130的冷卻通道190的傳熱流體將冷卻板130維持在約攝氏90度至約攝氏80度之間或維持在低於攝氏90度的溫度。
靜電吸盤174包括設置在介電體175中的吸附電極186。介電體175具有工件支撐表面137和與工件支撐表面137相對的底表面133。靜電吸盤174的介電體175可由陶瓷材料(如氧化鋁(Al2
O3
)、氮化鋁(AlN)或其他合適材料)製成。或者,絕緣體175可由聚合物(如聚酰亞胺、聚醚醚酮、聚芳醚酮等)製成。
介電體175亦可包括嵌入其中的一個或更多個電阻加熱器188。可提供電阻加熱器188以將基板支撐組件126的溫度升高到適於處理設置在基板支撐組件126的工件支撐表面137上的基板124的溫度。電阻加熱器188透過設施板145耦接至加熱器電源189。加熱器電源189可向電阻加熱器188提供900瓦或更高的功率。控制器(未圖示)可控制加熱器電源189的操作,其通常經設定以將基板124加熱到預定溫度。在一個實施例中,電阻加熱器188包括複數個橫向分開的加熱區域,其中控制器使得電阻加熱器188的至少一個區域相對於位在其他區域的一個或更多個區域中的電阻加熱器188被優先加熱。例如,電阻加熱器188可同心地佈置在複數個分開的加熱區域中。電阻加熱器188可將基板124維持在適於處理的溫度。在使用升高的處理溫度的一些實施例中,電阻加熱器188可將基板124維持在約攝氏180度至約攝氏500度之間的溫度。
靜電吸盤174通常包括嵌入介電體175中的吸附電極186。吸附電極186可經配置為單極或雙極電極,或其他合適的佈置。吸附電極186透過RF濾波器耦接至吸附電源187,吸附電源187提供RF或DC功率以將基板124靜電固定於靜電吸盤174的工件支撐表面137。RF濾波器防止用於在電漿處理腔室100內形成電漿(未圖示)的RF功率免於損壞電氣設備或免於在腔室外出現電氣危險。
靜電吸盤174的工件支撐表面137可包括氣體通道(未圖示),氣體通道用於向基板124與靜電吸盤174的工件支撐表面137之間界定的間隙空間提供背側傳熱氣體。靜電吸盤174亦可包括用於容納升舉銷(未圖示)的升舉銷孔,升舉銷用於將基板124升高到靜電吸盤174的工件支撐表面137上方,以利機器人傳遞進出電漿處理腔室100 。
黏著層150設置在靜電吸盤174和冷卻板130之間。黏著層150可由提供靜電吸盤174和冷卻板130的不同熱膨脹之數個層形成。接合層150包括黏著層(圖3中所示為308)和密封帶140。密封帶140經配置保護黏合材料免受存在於處理區域110的氣體和電漿,黏合材料形成設置在靜電吸盤174和冷卻板130之間的結合層150的黏著層。
圖2A是密封帶140的頂部平面圖。密封帶140具有環形主體201。環形主體201具有中心202,密封帶140繞中心202是實質一致的。環形主體201具有內表面212和外表面210。環形主體201的外表面210具有直徑208,直徑208界定密封帶140的外直徑。在一個實施例中,直徑208可以在約306mm至約310mm之間,如約308mm。 在另一個實施例中,直徑208可在約206mm至約210mm之間,如約208mm。在又另一個實施例中,直徑208可在約456mm至約460mm之間,如約458mm。
密封帶140可由軟彈性體材料形成,例如具有約60至約80之間蕭氏D硬度的軟彈性體材料,如約72。密封帶140可另外具有約10Mpa至約15Mpa之間的拉伸強度,如約11.1Mpa。形成密封帶140的彈性體材料可在斷裂之前伸長至其原始尺寸的約160%。密封帶140可由高效能彈性體形成,如四氟乙烯/丙烯、全氟彈性體(如Fluoritz-TR®
或Perlast G67P®
)或其他合適的材料。在一個實施例中,密封帶140由Fluoritz-TR®
形成。密封帶140的材料沒有填料(void of fillers)且為耐氟及耐氧化學物質,以用於增強對破裂和電漿自由基的抵抗力。沒有填充材料防止傳統填充密封件在填料材料邊界處發生過早的破裂形成,在填料材料邊界處基體彈性體被蝕刻(etched)掉。不存在填充材料的情況下,材料侵蝕率(erosion rate)可能會增加,但是較大的接觸和沒有裂縫有利地改善了密封帶140的使用壽命。
圖2B是沿圖2A中的剖面線B-B截取的密封件140之截面圖。密封帶140具有頂表面254和底表面252。頂表面254和底表面252由內表面212連接。假想法線253可設置在與內表面212成90°的位置。角度220可形成於假想法線253和底表面252之間。頂表面254可與假想法線253類似地成角度,就像底表面252一樣。所成角度220可以是約10度至大約30度之間,如約20度。因此,頂表面254及底表面252可具有與內表面212所成角度221為約100°至約120°之間,如大於約110°。頂表面254和底表面252可具有沿內表面212和外表面210之間的法線量測的長度262。長度262可在約1.55mm至約1.25mm之間,如約1.40mm。
外表面210可具有在頂表面254至底表面252之間延伸的高度264。高度264可以是介於約2.075mm至約2.125mm之間,如約2.100mm。外表面210可具有形成在其中的凹部230。 凹部230可產生用於密封帶140的V形剖面。凹部230可具有約0.30mm至約0.50mm之間的深度232,如約0.40mm。凹部230允許密封帶140易於壓縮以便於安裝,且使頂表面254和底表面252以實質平行的方向定向,使得當在靜電吸盤174和冷卻板130之間產生密封時、當設置在基板支撐組件217中時,增強與靜電吸盤174和冷卻板130的接觸面積。 在一個實施例中,密封帶140對使凹部230和內表面212分叉的一假想線為對稱。
現在將參照圖3論述在基板支撐組件127中使用密封帶140。圖3是基板支撐組件126的局部截面示意性側視圖,其詳細描述了設置在靜電吸盤174和冷卻板130之間的密封件140的一個實施例。 設置在靜電吸盤174和冷卻板130之間的黏著層150可由不同材料形成。電插座360可提供與嵌入於介電體175的電阻加熱器188和吸附電極186的連接。電阻加熱器188可將靜電吸盤174的底部133加熱到高於250℃的溫度。接合層150可延伸至靜電吸盤174或冷卻板130的約一外直徑352。接合層150是彈性的,以解決靜電吸盤174和冷卻板130之間的熱膨脹,以實質防止破裂,及降低靜電吸盤174自冷卻板130分層的可能性。
接合層150包括至少一個黏著層308。黏著層308可由全氟化合物、聚矽氧、多孔石墨、丙烯酸類化合物、全氟甲基乙烯基醚、烷氧基乙烯基醚、CIRLEX®、TEFZEL®、KAPTON®、VESPEL®、KERIMID®、聚乙烯或其他合適的材料形成。黏著層308可具有約1mm至約5mm的厚度302,如約1.75mm。黏著層308可具有約0.1W/mK至約1W/mK之間的熱導率,如約0.17W/mK。
槽口342在黏著層308的外周350和靜電吸盤174的外直徑352之間形成。密封帶140的直徑208小於靜電吸盤174的外直徑352。此外,密封帶140的直徑208小於冷卻板130的外直徑。密封帶140繞黏著層308的外周350設置(即圍繞(circumscribe)黏著層308的外周350)。槽口342可調整尺寸以允許密封帶140密封地接合靜電吸盤174和冷卻板130。儘管密封帶140可以可選地在靜電吸盤174和冷卻板130之間形成真空緊密密封,但是密封件的主要功能是保護黏著層308所暴露的外周350免於受到處理區域110內的環境影響。
在一個實施例中,密封帶140防止處理氣體暴露於基板支撐組件126的黏合材料(黏著層308)。亦即,密封帶140保護基板支撐組件126的內部免於暴露在電漿環境。密封帶140防止來自黏著層308所揮發的氣體受電漿環境污染。密封帶140保護黏著層308和基板支撐組件127的其他內部結構免受電漿環境的影響。
密封帶140可以是V形的。密封帶140的形狀提供用於密封的接觸表面310,接觸表面310實質大於傳統的O形環密封件。另外,V形提供更簡易的密封帶140安裝。例如,相較於安裝傳統O形環所需的力,安裝具有V形的密封帶140所需的力減少了約40%。例如,在0℃下,密封帶140的安裝力約為0.63N / mm,而傳統的O形環的安裝力約為1.00N/mm。相較於傳統O形環的接觸面積,具有V形的密封帶140的接觸表面310實質較大(寬度)。例如,密封帶140的接觸表面310比傳統O形環的接觸面積約大30%。隨著溫度從攝氏0度升高到攝氏50度,密封帶140的接觸表面310從約0.62mm增加到約0.74mm。
在安裝之後,密封帶140上的壓縮負載隨密封帶140的溫度變化。在操作中,密封帶140可壓縮多達20%。在較高溫度下,即使在一定侵蝕之後,密封帶140所增加的壓縮也改善了密封能力。密封帶140的侵蝕曲線可表示密封帶140的使用壽命。800 RF小時和1700 RF小時的侵蝕曲線顯示出低耐磨性(wear),其需要更換密封帶140。壓縮負載不是線性的,因為密封帶140的熱膨脹使得密封帶140的擠壓增加,導致壓縮負載增加。同時,密封帶140的材料被加熱軟化而導致壓縮負載降低。例如,在攝氏0度下,密封帶140上的壓縮負載為約0.23N/mm;在攝氏25度下,密封帶140上的壓縮負載增加至約0.26N/mm;及在攝氏50度下,密封帶140上的壓縮負載降低至約0.15N/mm。
在金屬桶(metallic drum)上測試密封帶140對初始破裂的抗力。密封帶140在金屬桶上拉伸28%。密封帶140暴露於具有以重量比為196:4流動的O2與CF4之電漿。相較於由Fluoritz-T20、透明全氟彈性體(FFKM)B或D、白FFKM F、K或L(white FFKM F,K or L)、及POR形成的密封帶140,由Fluoritz-TR形成的密封帶140展現了增加了100%至破裂為止的使用壽命。此外,由於侵蝕引起的重量損失小於除了Fluoritz-T20之外的所有上述材料。有利的是,壓縮負載和密封帶140的材料顯著減少了可能使密封受損的破裂。例如,在320RF小時及600RF小時之後,由Fluoritz-TR形成的密封帶140沒有可見的侵蝕或破裂跡象。
有利地,具有V形的密封帶140實質防止密封件受處理腔室中嚴酷的自由基化學物質而破裂或分解,如氟自由基穿透和蝕刻掉保護接合層的密封件。具有V形的密封帶140實質最小化ESC和冷卻板之間接合的分解,同時實質防止自接合層釋氣的揮發物進入處理環境。因此,具有V形的密封帶140防止腔室中的污染且減少了腔室停機時間,這可能影響製程產量和操作成本。
雖然前面所述係針對本發明的實施,但在不背離本發明基本範圍及以下專利申請範圍所界定之範圍下,可設計本發明的其他與進一步的實施。
100‧‧‧電漿處理腔室102‧‧‧腔室主體104‧‧‧側壁108‧‧‧蓋件110‧‧‧處理腔室112‧‧‧注入設備114‧‧‧氣體板116‧‧‧線圈118‧‧‧匹配電路120‧‧‧RF電源122‧‧‧流體源124‧‧‧基板126‧‧‧基板支撐組件127‧‧‧基板支撐組件128‧‧‧排氣口130‧‧‧冷卻板132‧‧‧泵送系統133‧‧‧底表面137‧‧‧工件支撐表面140‧‧‧密封帶145‧‧‧設施板150‧‧‧接合層174‧‧‧靜電吸盤175‧‧‧介電體176‧‧‧底板186‧‧‧吸附電極187‧‧‧吸附電源188‧‧‧電阻加熱器189‧‧‧加熱器電源190‧‧‧冷卻通道201‧‧‧環形主體202‧‧‧中心208‧‧‧直徑210‧‧‧外表面212‧‧‧內表面220‧‧‧角度230‧‧‧凹部232‧‧‧深度252‧‧‧底表面253‧‧‧假想線254‧‧‧頂表面262‧‧‧長度264‧‧‧高度302‧‧‧厚度308‧‧‧黏著層310‧‧‧接觸表面342‧‧‧槽口350‧‧‧外周352‧‧‧外直徑360‧‧‧電插座
本發明較特定的說明已簡要概述於前,可藉由參考本案實施而具有本發明的較為特定的說明,部份實施繪示於所附圖式中,以便可以詳盡瞭解本發明的上述特徵。然而,值得注意的是,所附圖式只繪示了本發明的典型實施,而由於本發明可允許其他等效的實施,因此所附圖式並不會視為本發明範圍之限制。
圖1是具有基板支撐組件的一個實施例之處理腔室的截面示意性側視圖。
圖2A是用於基板支撐組件的密封件的俯視圖。
圖2B是沿圖2A中的剖面線B-B截取的密封件之截面圖。
圖3是基板支撐組件的局部截面示意性側視圖,其詳細描述了設置在靜電吸盤和冷卻板之間的密封件的一個實施例。
為便於理解,在可能的情況下,使用相同的數字編號代表圖示中相同的元件。可以預期的是在一個實施中所揭露的元件可以有利地用於其他實施中而無需贅述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
122‧‧‧流體源
130‧‧‧冷卻板
133‧‧‧底表面
137‧‧‧工件支撐表面
140‧‧‧密封帶
150‧‧‧接合層
174‧‧‧靜電吸盤
175‧‧‧介電體
186‧‧‧吸附電極
187‧‧‧吸附電源
188‧‧‧電阻加熱器
189‧‧‧加熱器電源
190‧‧‧冷卻通道
310‧‧‧接觸表面
342‧‧‧槽口
350‧‧‧外周
352‧‧‧外直徑
Claims (20)
- 一種基板支撐組件,包括:一靜電吸盤,該靜電吸盤具有一工件支撐表面和一底表面;一冷卻板,該冷卻板具有一頂表面;及一接合層,該接合層固定該靜電吸盤的該底表面和該冷卻板的該頂表面,其中該接合層包含:一黏著層;及一密封帶,該密封帶圍繞(circumscribing)該黏著層並接觸該靜電吸盤和該冷卻板,該密封帶具有一環形主體,該環形主體包含:一內表面;一頂表面和一底表面,該頂表面和該底表面的每一個從該內表面以距該內表面超過110°的一角度延伸,其中該頂表面的一長度的約40%至約60%經配置以與該靜電吸盤的該底表面鄰接;及一外表面,該外表面具有形成在其中的一凹部(indent),該外表面將該頂表面連接到該底表面。
- 如請求項1所述之基板支撐組件,其中該密封帶的該環形主體進一步包括:具有一V形的一剖面。
- 如請求項1所述之基板支撐組件,其中該密封帶進一步包括:約306mm至約310mm之間的一直徑。
- 如請求項3所述之基板支撐組件,其中該環形主體在斷裂之前可伸長至約160%。
- 如請求項1所述之基板支撐組件,其中該環形主體具有約60至80之間的一蕭氏D硬度。
- 如請求項1所述之基板支撐組件,其中該環形主體具有約10Mpa至約15Mpa的一拉伸強度。
- 如請求項1所述之基板支撐組件,其中該環形主體由四氟乙烯/丙烯或一全氟彈性體形成。
- 如請求項7所述之基板支撐組件,其中該密封帶的一材料沒有填料(void of fillers)且為耐氟及耐氧化學物質。
- 如請求項1所述之基板支撐組件,其中在攝氏0度下該密封帶上的一壓縮負載為約0.23N/mm,在攝氏25度下該密封帶上的該壓縮負載為約0.26N/mm,及在攝氏50度下該密封帶上的該壓縮負載為約0.15N/mm。
- 如請求項1所述之基板支撐組件,進一步包括:一槽口(notch),該槽口在該黏著層的一外周與 該靜電吸盤的一外直徑之間形成,其中該密封帶設置在該槽口中。
- 如請求項1所述之基板支撐組件,其中該密封帶的一直徑小於該靜電吸盤的一外直徑。
- 如請求項11所述之基板支撐組件,其中該密封帶的該直徑小於該冷卻板的該外直徑。
- 如請求項1所述之基板支撐組件,其中該凹部的一深度介於約0.30mm至約0.50mm之間。
- 如請求項1所述之基板支撐組件,其中該密封帶透過使該凹部和該內表面分叉的一假想線(imaginary line)為對稱。
- 一種基板支撐組件,包括:一靜電吸盤,該靜電吸盤具有一工件支撐表面、一吸盤直徑和一底表面;一冷卻板,該冷卻板具有一頂表面和一冷卻板直徑;及一接合層,該接合層固定該靜電吸盤的該底表面和該冷卻板的該頂表面,其中該接合層包含:一黏著層;及一密封帶,該密封帶圍繞該黏著層並接觸該靜電吸盤和該冷卻板,該密封帶具有一環形主體,該環形主體具有一外直徑,該外直徑小於該吸盤直徑或 該冷卻板直徑,且該外直徑介於約306mm至約310mm之間,由一沒有填料的全氟彈性體形成的該環形主體具有約60至80之間的一蕭氏D硬度及約10Mpa至約15Mpa的一拉伸強度,該環形主體包含:一內表面;一頂表面和一底表面,該頂表面和該底表面的每一個從該內表面以距該內表面超過110°的一角度延伸,其中該頂表面的一長度的約40%至約60%經配置以與該靜電吸盤的該底表面鄰接;及一外表面,該外表面具有形成在其中的一凹部,該外表面將該頂表面連接到該底表面,其中該凹部在該密封帶中形成具有一V形的一剖面。
- 如請求項15所述之基板支撐組件,其中該密封帶的該環形主體進一步包括:具有一V形的一剖面。
- 如請求項15所述之基板支撐組件,其中在攝氏0度下該密封帶上的一壓縮負載為約0.23N/mm,在攝氏25度下該密封帶上的該壓縮負載為約0.26N/mm,及在攝氏50度下該密封帶上的該壓縮負載為約0.15N/mm。
- 如請求項15所述之基板支撐組件,進一步 包括:一槽口,該槽口在該黏著層的一外周與該靜電吸盤的該外直徑之間形成,其中該密封帶設置在該槽口中。
- 如請求項15所述之基板支撐組件,其中該凹部的一深度介於約0.30mm至約0.50mm之間。
- 如請求項15所述之基板支撐組件,其中該密封帶透過使該凹部和該內表面分叉的一假想線為對稱。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US15/361,365 US10943808B2 (en) | 2016-11-25 | 2016-11-25 | Ceramic electrostatic chuck having a V-shape seal band |
US15/361,365 | 2016-11-25 |
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TW201834108A TW201834108A (zh) | 2018-09-16 |
TWI786067B true TWI786067B (zh) | 2022-12-11 |
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Family Applications (2)
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TW106135236A TWI786067B (zh) | 2016-11-25 | 2017-10-16 | 具有v形密封帶的陶瓷靜電吸盤 |
TW111143123A TW202310235A (zh) | 2016-11-25 | 2017-10-16 | 用於半導體處理腔室的v形密封帶 |
Family Applications After (1)
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TW111143123A TW202310235A (zh) | 2016-11-25 | 2017-10-16 | 用於半導體處理腔室的v形密封帶 |
Country Status (6)
Country | Link |
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US (2) | US10943808B2 (zh) |
JP (2) | JP7225093B2 (zh) |
KR (2) | KR102630741B1 (zh) |
CN (2) | CN117267243A (zh) |
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WO (1) | WO2018097888A1 (zh) |
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2017
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- 2017-09-26 KR KR1020197018196A patent/KR102471167B1/ko active IP Right Grant
- 2017-09-26 CN CN201780065037.4A patent/CN109844928B/zh active Active
- 2017-09-26 WO PCT/US2017/053470 patent/WO2018097888A1/en active Application Filing
- 2017-09-26 JP JP2019524432A patent/JP7225093B2/ja active Active
- 2017-10-16 TW TW106135236A patent/TWI786067B/zh active
- 2017-10-16 TW TW111143123A patent/TW202310235A/zh unknown
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2021
- 2021-02-24 US US17/184,454 patent/US20210183680A1/en not_active Abandoned
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2022
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Also Published As
Publication number | Publication date |
---|---|
JP7225093B2 (ja) | 2023-02-20 |
TW202310235A (zh) | 2023-03-01 |
KR20220162854A (ko) | 2022-12-08 |
KR20190078656A (ko) | 2019-07-04 |
KR102630741B1 (ko) | 2024-01-29 |
US20210183680A1 (en) | 2021-06-17 |
JP2023030013A (ja) | 2023-03-07 |
CN109844928A (zh) | 2019-06-04 |
TW201834108A (zh) | 2018-09-16 |
US10943808B2 (en) | 2021-03-09 |
CN109844928B (zh) | 2023-10-10 |
CN117267243A (zh) | 2023-12-22 |
JP2019537262A (ja) | 2019-12-19 |
WO2018097888A1 (en) | 2018-05-31 |
US20180151402A1 (en) | 2018-05-31 |
KR102471167B1 (ko) | 2022-11-24 |
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