KR20140107666A - 반사막 및/또는 투과막, 혹은 전기 배선 및/또는 전극에 사용되는 Ag 합금막, 및 Ag 합금 스퍼터링 타깃 및 Ag 합금 필러 - Google Patents

반사막 및/또는 투과막, 혹은 전기 배선 및/또는 전극에 사용되는 Ag 합금막, 및 Ag 합금 스퍼터링 타깃 및 Ag 합금 필러 Download PDF

Info

Publication number
KR20140107666A
KR20140107666A KR1020147021427A KR20147021427A KR20140107666A KR 20140107666 A KR20140107666 A KR 20140107666A KR 1020147021427 A KR1020147021427 A KR 1020147021427A KR 20147021427 A KR20147021427 A KR 20147021427A KR 20140107666 A KR20140107666 A KR 20140107666A
Authority
KR
South Korea
Prior art keywords
film
alloy
group
element selected
alloy film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020147021427A
Other languages
English (en)
Korean (ko)
Inventor
유키 다우치
요코 시다
히로유키 오쿠노
Original Assignee
가부시키가이샤 고베 세이코쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 고베 세이코쇼 filed Critical 가부시키가이샤 고베 세이코쇼
Publication of KR20140107666A publication Critical patent/KR20140107666A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C22C5/08—Alloys based on silver with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/26—Reflecting filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
KR1020147021427A 2012-02-02 2013-01-22 반사막 및/또는 투과막, 혹은 전기 배선 및/또는 전극에 사용되는 Ag 합금막, 및 Ag 합금 스퍼터링 타깃 및 Ag 합금 필러 Ceased KR20140107666A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2012-021158 2012-02-02
JP2012021158 2012-02-02
JPJP-P-2012-171487 2012-08-01
JP2012171487A JP2013177667A (ja) 2012-02-02 2012-08-01 反射膜および／または透過膜、もしくは電気配線および／または電極に用いられるＡｇ合金膜、並びにＡｇ合金スパッタリングターゲットおよびＡｇ合金フィラー
PCT/JP2013/051152 WO2013115002A1 (ja) 2012-02-02 2013-01-22 反射膜および／または透過膜、もしくは電気配線および／または電極に用いられるＡｇ合金膜、並びにＡｇ合金スパッタリングターゲットおよびＡｇ合金フィラー

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020167023358A Division KR20160106184A (ko) 2012-02-02 2013-01-22 Ag 합금 스퍼터링 타깃

Publications (1)

Publication Number Publication Date
KR20140107666A true KR20140107666A (ko) 2014-09-04

Family

ID=48905044

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020147021427A Ceased KR20140107666A (ko) 2012-02-02 2013-01-22 반사막 및/또는 투과막, 혹은 전기 배선 및/또는 전극에 사용되는 Ag 합금막, 및 Ag 합금 스퍼터링 타깃 및 Ag 합금 필러
KR1020167023358A Ceased KR20160106184A (ko) 2012-02-02 2013-01-22 Ag 합금 스퍼터링 타깃

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020167023358A Ceased KR20160106184A (ko) 2012-02-02 2013-01-22 Ag 합금 스퍼터링 타깃

Country Status (6)

Country Link
US (1) US20140369884A1 (enExample)
JP (1) JP2013177667A (enExample)
KR (2) KR20140107666A (enExample)
CN (1) CN104093865A (enExample)
TW (1) TWI485269B (enExample)
WO (1) WO2013115002A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140122338A (ko) * 2013-04-09 2014-10-20 쓰리엠 이노베이티브 프로퍼티즈 캄파니 터치패널, 그 제조방법 및 터치패널용 Ag-Pd-Nd 합금
JP5850077B2 (ja) * 2014-04-09 2016-02-03 三菱マテリアル株式会社 Ａｇ合金膜及びＡｇ合金膜形成用スパッタリングターゲット
KR20170038894A (ko) 2014-08-07 2017-04-07 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반사 시트 및 그의 제조 방법
JP6172230B2 (ja) * 2014-09-18 2017-08-02 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、Ａｇ合金膜およびＡｇ合金膜の製造方法
JP5975186B1 (ja) 2015-02-27 2016-08-23 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット及びＡｇ合金膜の製造方法
KR20220035992A (ko) * 2016-12-22 2022-03-22 다나카 기킨조쿠 고교 가부시키가이샤 반도체 기판의 이면 전극의 전극 구조 및 그의 제조 방법, 그리고 해당 전극 구조의 제조에 제공되는 스퍼터링 타깃
CN106756836A (zh) * 2017-01-06 2017-05-31 广州市祺虹电子科技有限公司 一种透明电路板用镧系靶材及其制造方法
US11231533B2 (en) * 2018-07-12 2022-01-25 Visera Technologies Company Limited Optical element having dielectric layers formed by ion-assisted deposition and method for fabricating the same
JP7199285B2 (ja) * 2019-03-29 2023-01-05 株式会社ノリタケカンパニーリミテド 銀パラジウム合金粉末およびその利用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003034828A (ja) * 2001-02-15 2003-02-07 Kobe Steel Ltd 電磁波シールド用のＡｇ合金膜、電磁波シールド用Ａｇ合金膜形成体及び電磁波シールド用Ａｇ合金スパッタリングターゲット
JP3855958B2 (ja) 2001-03-16 2006-12-13 石福金属興業株式会社 スパッタリングターゲット材
JP4105956B2 (ja) 2002-08-08 2008-06-25 株式会社神戸製鋼所 光反射膜およびこれを用いた液晶表示素子、ならびに光反射膜用スパッタリングターゲット
JP4009564B2 (ja) * 2003-06-27 2007-11-14 株式会社神戸製鋼所 リフレクター用Ａｇ合金反射膜、及び、このＡｇ合金反射膜を用いたリフレクター、並びに、このＡｇ合金反射膜のＡｇ合金薄膜の形成用のＡｇ合金スパッタリングターゲット
JP4384453B2 (ja) * 2003-07-16 2009-12-16 株式会社神戸製鋼所 Ａｇ系スパッタリングターゲット及びその製造方法
JP4421394B2 (ja) 2003-07-23 2010-02-24 シャープ株式会社 銀合金材料、回路基板、電子装置、及び回路基板の製造方法
JP4188299B2 (ja) * 2003-12-04 2008-11-26 株式会社神戸製鋼所 フラットパネルディスプレイ用Ａｇ基合金配線電極膜及びＡｇ基合金スパッタリングターゲット並びにフラットパネルディスプレイ
WO2005056849A1 (ja) * 2003-12-10 2005-06-23 Tanaka Kikinzoku Kogyo K.K. 反射率維持特性に優れた銀合金
JP4918994B2 (ja) * 2005-05-30 2012-04-18 住友電気工業株式会社 金属被膜の形成方法および金属配線
WO2006132413A1 (ja) * 2005-06-10 2006-12-14 Tanaka Kikinzoku Kogyo K.K. 電極、配線及び電磁波遮蔽用の銀合金
JPWO2006132417A1 (ja) * 2005-06-10 2009-01-08 田中貴金属工業株式会社 反射率・透過率維持特性に優れた銀合金
JPWO2006132412A1 (ja) * 2005-06-10 2009-01-08 田中貴金属工業株式会社 電極、配線及び電磁波遮蔽用の銀合金

Also Published As

Publication number Publication date
TWI485269B (zh) 2015-05-21
TW201343936A (zh) 2013-11-01
KR20160106184A (ko) 2016-09-09
JP2013177667A (ja) 2013-09-09
WO2013115002A1 (ja) 2013-08-08
CN104093865A (zh) 2014-10-08
US20140369884A1 (en) 2014-12-18

Similar Documents

Publication Publication Date Title
KR20140107666A (ko) 반사막 및/또는 투과막, 혹은 전기 배선 및/또는 전극에 사용되는 Ag 합금막, 및 Ag 합금 스퍼터링 타깃 및 Ag 합금 필러
CN107735841B (zh) 透明导电体
Kim et al. Highly flexible ZnO/Ag/ZnO conducting electrode for organic photonic devices
TW201743178A (zh) 積層膜、顯示裝置及輸入裝置
KR101764053B1 (ko) 반사 전극용 또는 배선 전극용 Ag 합금막, 반사 전극 또는 배선 전극, 및 Ag 합금 스퍼터링 타겟
US20140342104A1 (en) Ag alloy film for reflective electrodes, and reflective electrode
JPWO2005020655A1 (ja) 電磁波遮蔽積層体およびこれを用いたディスプレイ装置
JP2004277780A (ja) 銀系合金の積層構造並びにそれを用いた電極、配線、反射膜及び反射電極
JP4168689B2 (ja) 薄膜積層体
WO2006132413A1 (ja) 電極、配線及び電磁波遮蔽用の銀合金
WO2006132410A1 (ja) 電極、配線及び電磁波遮蔽用の銀合金
CN102471147A (zh) 带透明导电膜的基板及等离子体显示器面板用基板
JP5920659B2 (ja) Ａｇ合金膜及びその形成方法
WO2006132412A1 (ja) 電極、配線及び電磁波遮蔽用の銀合金
JP2006001271A (ja) Ａｇ系２層膜および透明導電体
KR20250145651A (ko) 산화물 스퍼터링 타깃 및 산화물막
TWI485270B (zh) Ａｇ合金膜形成用濺鍍靶及Ａｇ合金膜、Ａｇ合金反射膜、Ａｇ合金導電膜、Ａｇ合金半透膜
JP4646415B2 (ja) Ａｇ系薄膜
KR20150022704A (ko) 은 합금 재료
JP2001001441A (ja) 透明導電積層体及びその製造方法
KR102252112B1 (ko) 은 계열 금속 합금 조성 기반 투명 전도성 산화물 박막 및 그 제조방법
JP2017043806A (ja) 光吸収薄膜および低反射導電膜
WO2021095550A1 (ja) 積層構造体
JP2007150323A (ja) 電磁波遮蔽積層体およびこれを用いたディスプレイ装置
WO2014030617A1 (ja) フラットパネルディスプレイの半透過電極用Ａｌ合金膜、およびフラットパネルディスプレイ用半透過電極

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
PA0105 International application

Patent event date: 20140730

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20140730

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20151111

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20160525

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20151111

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20160525

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20160107

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20140730

Comment text: Amendment to Specification, etc.

PX0601 Decision of rejection after re-examination

Comment text: Decision to Refuse Application

Patent event code: PX06014S01D

Patent event date: 20160725

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20160627

Comment text: Decision to Refuse Application

Patent event code: PX06011S01I

Patent event date: 20160525

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20160107

Comment text: Notification of reason for refusal

Patent event code: PX06013S01I

Patent event date: 20151111

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20140730

A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20160825