CN104093865A - 用于反射膜和/或透射膜、或者用于电气布线和/或电极的Ag合金膜、以及Ag合金溅射靶及Ag合金填料 - Google Patents

用于反射膜和/或透射膜、或者用于电气布线和/或电极的Ag合金膜、以及Ag合金溅射靶及Ag合金填料 Download PDF

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Publication number
CN104093865A
CN104093865A CN201380007803.3A CN201380007803A CN104093865A CN 104093865 A CN104093865 A CN 104093865A CN 201380007803 A CN201380007803 A CN 201380007803A CN 104093865 A CN104093865 A CN 104093865A
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CN
China
Prior art keywords
film
alloy
group
atomic
element selected
Prior art date
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Pending
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CN201380007803.3A
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English (en)
Chinese (zh)
Inventor
田内裕基
志田阳子
奥野博行
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Kobe Steel Ltd
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Kobe Steel Ltd
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Filing date
Publication date
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Publication of CN104093865A publication Critical patent/CN104093865A/zh
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C22C5/08—Alloys based on silver with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/26—Reflecting filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Powder Metallurgy (AREA)
  • Conductive Materials (AREA)
CN201380007803.3A 2012-02-02 2013-01-22 用于反射膜和/或透射膜、或者用于电气布线和/或电极的Ag合金膜、以及Ag合金溅射靶及Ag合金填料 Pending CN104093865A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2012021158 2012-02-02
JP2012-021158 2012-02-02
JP2012171487A JP2013177667A (ja) 2012-02-02 2012-08-01 反射膜および／または透過膜、もしくは電気配線および／または電極に用いられるＡｇ合金膜、並びにＡｇ合金スパッタリングターゲットおよびＡｇ合金フィラー
JP2012-171487 2012-08-01
PCT/JP2013/051152 WO2013115002A1 (ja) 2012-02-02 2013-01-22 反射膜および／または透過膜、もしくは電気配線および／または電極に用いられるＡｇ合金膜、並びにＡｇ合金スパッタリングターゲットおよびＡｇ合金フィラー

Publications (1)

Publication Number Publication Date
CN104093865A true CN104093865A (zh) 2014-10-08

Family

ID=48905044

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380007803.3A Pending CN104093865A (zh) 2012-02-02 2013-01-22 用于反射膜和/或透射膜、或者用于电气布线和/或电极的Ag合金膜、以及Ag合金溅射靶及Ag合金填料

Country Status (6)

Country Link
US (1) US20140369884A1 (enExample)
JP (1) JP2013177667A (enExample)
KR (2) KR20140107666A (enExample)
CN (1) CN104093865A (enExample)
TW (1) TWI485269B (enExample)
WO (1) WO2013115002A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106414793A (zh) * 2015-02-27 2017-02-15 三菱综合材料株式会社 Ag合金溅射靶及Ag合金膜的制造方法
CN106756836A (zh) * 2017-01-06 2017-05-31 广州市祺虹电子科技有限公司 一种透明电路板用镧系靶材及其制造方法
CN110100305A (zh) * 2016-12-22 2019-08-06 田中贵金属工业株式会社 半导体衬底的背面电极的电极结构及其制造方法、以及供于该电极结构的制造的溅射靶

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140122338A (ko) * 2013-04-09 2014-10-20 쓰리엠 이노베이티브 프로퍼티즈 캄파니 터치패널, 그 제조방법 및 터치패널용 Ag-Pd-Nd 합금
JP5850077B2 (ja) * 2014-04-09 2016-02-03 三菱マテリアル株式会社 Ａｇ合金膜及びＡｇ合金膜形成用スパッタリングターゲット
WO2016022628A1 (en) * 2014-08-07 2016-02-11 3M Innovative Properties Company Reflection sheet and method of manufacturing the same
JP6172230B2 (ja) * 2014-09-18 2017-08-02 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、Ａｇ合金膜およびＡｇ合金膜の製造方法
US11231533B2 (en) * 2018-07-12 2022-01-25 Visera Technologies Company Limited Optical element having dielectric layers formed by ion-assisted deposition and method for fabricating the same
JP7199285B2 (ja) * 2019-03-29 2023-01-05 株式会社ノリタケカンパニーリミテド 銀パラジウム合金粉末およびその利用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003034828A (ja) * 2001-02-15 2003-02-07 Kobe Steel Ltd 電磁波シールド用のＡｇ合金膜、電磁波シールド用Ａｇ合金膜形成体及び電磁波シールド用Ａｇ合金スパッタリングターゲット
WO2005056849A1 (ja) * 2003-12-10 2005-06-23 Tanaka Kikinzoku Kogyo K.K. 反射率維持特性に優れた銀合金
CN1823179A (zh) * 2003-07-16 2006-08-23 株式会社神户制钢所 Ag系溅射靶及其制造方法
WO2006132412A1 (ja) * 2005-06-10 2006-12-14 Tanaka Kikinzoku Kogyo K.K. 電極、配線及び電磁波遮蔽用の銀合金
EP1889933A1 (en) * 2005-06-10 2008-02-20 Tanaka Kikinzoku Kogyo Kabushiki Kaisha Silver alloy excellent in reflectance/transmittance maintaining characteristics

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JP3855958B2 (ja) 2001-03-16 2006-12-13 石福金属興業株式会社 スパッタリングターゲット材
JP4105956B2 (ja) 2002-08-08 2008-06-25 株式会社神戸製鋼所 光反射膜およびこれを用いた液晶表示素子、ならびに光反射膜用スパッタリングターゲット
JP4009564B2 (ja) * 2003-06-27 2007-11-14 株式会社神戸製鋼所 リフレクター用Ａｇ合金反射膜、及び、このＡｇ合金反射膜を用いたリフレクター、並びに、このＡｇ合金反射膜のＡｇ合金薄膜の形成用のＡｇ合金スパッタリングターゲット
JP4421394B2 (ja) 2003-07-23 2010-02-24 シャープ株式会社 銀合金材料、回路基板、電子装置、及び回路基板の製造方法
JP4188299B2 (ja) 2003-12-04 2008-11-26 株式会社神戸製鋼所 フラットパネルディスプレイ用Ａｇ基合金配線電極膜及びＡｇ基合金スパッタリングターゲット並びにフラットパネルディスプレイ
JP4918994B2 (ja) * 2005-05-30 2012-04-18 住友電気工業株式会社 金属被膜の形成方法および金属配線
WO2006132413A1 (ja) * 2005-06-10 2006-12-14 Tanaka Kikinzoku Kogyo K.K. 電極、配線及び電磁波遮蔽用の銀合金

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003034828A (ja) * 2001-02-15 2003-02-07 Kobe Steel Ltd 電磁波シールド用のＡｇ合金膜、電磁波シールド用Ａｇ合金膜形成体及び電磁波シールド用Ａｇ合金スパッタリングターゲット
CN1823179A (zh) * 2003-07-16 2006-08-23 株式会社神户制钢所 Ag系溅射靶及其制造方法
WO2005056849A1 (ja) * 2003-12-10 2005-06-23 Tanaka Kikinzoku Kogyo K.K. 反射率維持特性に優れた銀合金
WO2006132412A1 (ja) * 2005-06-10 2006-12-14 Tanaka Kikinzoku Kogyo K.K. 電極、配線及び電磁波遮蔽用の銀合金
EP1889933A1 (en) * 2005-06-10 2008-02-20 Tanaka Kikinzoku Kogyo Kabushiki Kaisha Silver alloy excellent in reflectance/transmittance maintaining characteristics

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106414793A (zh) * 2015-02-27 2017-02-15 三菱综合材料株式会社 Ag合金溅射靶及Ag合金膜的制造方法
CN106414793B (zh) * 2015-02-27 2018-05-18 三菱综合材料株式会社 Ag合金溅射靶及Ag合金膜的制造方法
US10577687B2 (en) 2015-02-27 2020-03-03 Mitsubishi Materials Corporation Ag alloy sputtering target and Ag alloy film manufacturing method
CN110100305A (zh) * 2016-12-22 2019-08-06 田中贵金属工业株式会社 半导体衬底的背面电极的电极结构及其制造方法、以及供于该电极结构的制造的溅射靶
CN106756836A (zh) * 2017-01-06 2017-05-31 广州市祺虹电子科技有限公司 一种透明电路板用镧系靶材及其制造方法

Also Published As

Publication number Publication date
WO2013115002A1 (ja) 2013-08-08
KR20160106184A (ko) 2016-09-09
JP2013177667A (ja) 2013-09-09
TW201343936A (zh) 2013-11-01
KR20140107666A (ko) 2014-09-04
US20140369884A1 (en) 2014-12-18
TWI485269B (zh) 2015-05-21

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Effective date of abandoning: 20171003