KR20140098002A - 산화물 반도체층의 처리 방법 - Google Patents

산화물 반도체층의 처리 방법 Download PDF

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Publication number
KR20140098002A
KR20140098002A KR1020140010374A KR20140010374A KR20140098002A KR 20140098002 A KR20140098002 A KR 20140098002A KR 1020140010374 A KR1020140010374 A KR 1020140010374A KR 20140010374 A KR20140010374 A KR 20140010374A KR 20140098002 A KR20140098002 A KR 20140098002A
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South Korea
Prior art keywords
semiconductor layer
oxide semiconductor
layer
oxide
oxygen
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KR1020140010374A
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Korean (ko)
Inventor
？페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20140098002A publication Critical patent/KR20140098002A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020140010374A 2013-01-30 2014-01-28 산화물 반도체층의 처리 방법 Ceased KR20140098002A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013016245 2013-01-30
JPJP-P-2013-016245 2013-01-30
JP2013128584 2013-06-19
JPJP-P-2013-128584 2013-06-19

Publications (1)

Publication Number Publication Date
KR20140098002A true KR20140098002A (ko) 2014-08-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140010374A Ceased KR20140098002A (ko) 2013-01-30 2014-01-28 산화물 반도체층의 처리 방법

Country Status (4)

Country Link
US (2) US9105658B2 (enExample)
JP (1) JP2015026808A (enExample)
KR (1) KR20140098002A (enExample)
TW (1) TWI593025B (enExample)

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JP2016214512A (ja) * 2015-05-19 2016-12-22 株式会社東芝 センサ
US10892327B2 (en) 2015-09-14 2021-01-12 University College Cork Semi-metal rectifying junction
JP6850096B2 (ja) * 2015-09-24 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法及び電子機器の作製方法
JP6176583B1 (ja) * 2015-11-12 2017-08-09 パナソニックＩｐマネジメント株式会社 光検出装置
KR20240132126A (ko) 2016-01-18 2024-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물막, 반도체 장치, 및 표시 장치
US10205008B2 (en) * 2016-08-03 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
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JP2021004788A (ja) * 2019-06-26 2021-01-14 株式会社デンソー センサ装置

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