KR20140040216A - 폴리실리콘 에미터 솔라 셀들에 대한 패턴화된 도핑 - Google Patents

폴리실리콘 에미터 솔라 셀들에 대한 패턴화된 도핑 Download PDF

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Publication number
KR20140040216A
KR20140040216A KR1020147000725A KR20147000725A KR20140040216A KR 20140040216 A KR20140040216 A KR 20140040216A KR 1020147000725 A KR1020147000725 A KR 1020147000725A KR 20147000725 A KR20147000725 A KR 20147000725A KR 20140040216 A KR20140040216 A KR 20140040216A
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KR
South Korea
Prior art keywords
polysilicon layer
regions
conductivity
dopant
implanted regions
Prior art date
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Ceased
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KR1020147000725A
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English (en)
Korean (ko)
Inventor
존 더블유. 그래프
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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Publication of KR20140040216A publication Critical patent/KR20140040216A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
KR1020147000725A 2011-06-15 2012-06-15 폴리실리콘 에미터 솔라 셀들에 대한 패턴화된 도핑 Ceased KR20140040216A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/160,721 2011-06-15
US13/160,721 US8658458B2 (en) 2011-06-15 2011-06-15 Patterned doping for polysilicon emitter solar cells
PCT/US2012/042736 WO2012174421A2 (en) 2011-06-15 2012-06-15 Patterned doping for polysilicon emitter solar cells

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020157002812A Division KR20150023071A (ko) 2011-06-15 2012-06-15 폴리실리콘 에미터 솔라 셀들에 대한 패턴화된 도핑

Publications (1)

Publication Number Publication Date
KR20140040216A true KR20140040216A (ko) 2014-04-02

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020147000725A Ceased KR20140040216A (ko) 2011-06-15 2012-06-15 폴리실리콘 에미터 솔라 셀들에 대한 패턴화된 도핑
KR1020157002812A Withdrawn KR20150023071A (ko) 2011-06-15 2012-06-15 폴리실리콘 에미터 솔라 셀들에 대한 패턴화된 도핑

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020157002812A Withdrawn KR20150023071A (ko) 2011-06-15 2012-06-15 폴리실리콘 에미터 솔라 셀들에 대한 패턴화된 도핑

Country Status (6)

Country Link
US (1) US8658458B2 (enExample)
JP (2) JP2014519723A (enExample)
KR (2) KR20140040216A (enExample)
CN (1) CN103608930A (enExample)
TW (1) TWI474494B (enExample)
WO (1) WO2012174421A2 (enExample)

Cited By (2)

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KR20160063009A (ko) * 2014-11-26 2016-06-03 엘지전자 주식회사 태양 전지
KR20160063010A (ko) * 2014-11-26 2016-06-03 엘지전자 주식회사 태양 전지 및 이의 제조 방법

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US9640676B2 (en) * 2012-06-29 2017-05-02 Sunpower Corporation Methods and structures for improving the structural integrity of solar cells
US9530923B2 (en) * 2012-12-21 2016-12-27 Sunpower Corporation Ion implantation of dopants for forming spatially located diffusion regions of solar cells
CN105190903B (zh) * 2013-03-15 2017-07-14 太阳能公司 太阳能电池降低的接触电阻及延长的寿命
KR101613843B1 (ko) 2013-04-23 2016-04-20 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR102045001B1 (ko) * 2013-06-05 2019-12-02 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101622089B1 (ko) 2013-07-05 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR102082880B1 (ko) * 2013-07-22 2020-02-28 엘지전자 주식회사 태양 전지의 제조 방법
DE102013219565A1 (de) * 2013-09-27 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Solarzelle und Verfahren zum Herstellen einer photovoltaischen Solarzelle
US9401450B2 (en) * 2013-12-09 2016-07-26 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
KR101614190B1 (ko) * 2013-12-24 2016-04-20 엘지전자 주식회사 태양전지 및 이의 제조 방법
KR102140068B1 (ko) * 2014-01-13 2020-07-31 엘지전자 주식회사 태양 전지의 제조 방법
KR101620431B1 (ko) * 2014-01-29 2016-05-12 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US20150280043A1 (en) * 2014-03-27 2015-10-01 David D. Smith Solar cell with trench-free emitter regions
US9337369B2 (en) 2014-03-28 2016-05-10 Sunpower Corporation Solar cells with tunnel dielectrics
US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules
US20150349180A1 (en) * 2014-05-30 2015-12-03 David D. Smith Relative dopant concentration levels in solar cells
KR101613846B1 (ko) 2014-06-10 2016-04-20 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US20150380581A1 (en) * 2014-06-27 2015-12-31 Michael C. Johnson Passivation of light-receiving surfaces of solar cells with crystalline silicon
US9263625B2 (en) * 2014-06-30 2016-02-16 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
KR101661807B1 (ko) * 2014-07-28 2016-09-30 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101622091B1 (ko) * 2014-08-20 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
DE102014218948A1 (de) 2014-09-19 2016-03-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle mit einer amorphen Siliziumschicht und Verfahren zum Herstellen solch einer photovoltaischen Solarzelle
US9559236B2 (en) * 2014-09-24 2017-01-31 Sunpower Corporation Solar cell fabricated by simplified deposition process
DE102015107842B3 (de) 2015-05-19 2016-10-27 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen einer Solarzelle mit oxidierten Zwischenbereichen zwischen Poly-Silizium-Kontakten
KR102373649B1 (ko) * 2015-05-28 2022-03-11 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101751727B1 (ko) * 2015-06-10 2017-07-11 엘지전자 주식회사 태양 전지의 제조 방법
CN106252458B (zh) 2015-06-10 2017-12-12 Lg电子株式会社 制造太阳能电池的方法
US10367115B2 (en) 2016-01-29 2019-07-30 Lg Electronics Inc. Method of manufacturing solar cell
CN107026218B (zh) * 2016-01-29 2019-05-10 Lg电子株式会社 制造太阳能电池的方法
NL2016382B1 (en) * 2016-03-07 2017-09-19 Stichting Energieonderzoek Centrum Nederland Method for manufacturing a solar cell with doped polysilicon surface areas
JP2018046177A (ja) * 2016-09-15 2018-03-22 株式会社アルバック 太陽電池の製造方法
KR102660829B1 (ko) 2016-10-20 2024-04-25 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
DE112017006152T5 (de) * 2016-12-06 2019-08-22 The Australian National University Solarzellenherstellung
FR3071358B1 (fr) * 2017-09-15 2019-09-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une cellule photovoltaique a homojonction
JP2019110185A (ja) * 2017-12-18 2019-07-04 株式会社アルバック 太陽電池の製造方法
US20190348548A1 (en) 2018-05-09 2019-11-14 International Business Machines Corporation Solar cell with reduced surface recombination
CN113140656B (zh) * 2021-04-26 2023-04-04 晶澳（扬州）太阳能科技有限公司 一种太阳能电池和硅薄膜的制备方法
CN114709294B (zh) * 2022-05-31 2022-11-29 浙江晶科能源有限公司 太阳能电池及其制备方法、光伏组件

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JPH04290274A (ja) * 1991-03-19 1992-10-14 Sharp Corp 光電変換装置
JP2001189483A (ja) 1999-10-18 2001-07-10 Sharp Corp バイパス機能付太陽電池セルおよびバイパス機能付き多接合積層型太陽電池セルおよびそれらの製造方法
US7468485B1 (en) 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US7705237B2 (en) 2006-11-27 2010-04-27 Sunpower Corporation Solar cell having silicon nano-particle emitter
US7727866B2 (en) 2008-03-05 2010-06-01 Varian Semiconductor Equipment Associates, Inc. Use of chained implants in solar cells
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US7851698B2 (en) 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
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Publication number Priority date Publication date Assignee Title
KR20160063009A (ko) * 2014-11-26 2016-06-03 엘지전자 주식회사 태양 전지
KR20160063010A (ko) * 2014-11-26 2016-06-03 엘지전자 주식회사 태양 전지 및 이의 제조 방법

Also Published As

Publication number Publication date
US20120322199A1 (en) 2012-12-20
TW201251083A (en) 2012-12-16
CN103608930A (zh) 2014-02-26
WO2012174421A3 (en) 2013-02-07
US8658458B2 (en) 2014-02-25
TWI474494B (zh) 2015-02-21
KR20150023071A (ko) 2015-03-04
JP2015111716A (ja) 2015-06-18
JP2014519723A (ja) 2014-08-14
WO2012174421A2 (en) 2012-12-20

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