KR20130086109A - 패키징 공정에서 언더필 쏘잉 방법 - Google Patents
패키징 공정에서 언더필 쏘잉 방법 Download PDFInfo
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- KR20130086109A KR20130086109A KR1020120138849A KR20120138849A KR20130086109A KR 20130086109 A KR20130086109 A KR 20130086109A KR 1020120138849 A KR1020120138849 A KR 1020120138849A KR 20120138849 A KR20120138849 A KR 20120138849A KR 20130086109 A KR20130086109 A KR 20130086109A
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- Prior art keywords
- underfill
- polymer
- die
- sawing
- package component
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- 238000000465 moulding Methods 0.000 claims description 9
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- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Abstract
방법은 제3 패키지 컴포넌트의 상부면 상에 제1 및 제2 패키지 컴포넌트를 접합하는 단계와, 폴리머를 분배하는 단계를 포함한다. 폴리머는, 제1 및 제3 패키지 컴포넌트 사이의 공간에 있는 제1 부분, 제2 및 제3 패키지 컴포넌트 사이의 공간에 있는 제2 부분 및 제1 및 제2 패키지 컴포넌트 사이의 간극에 있는 제3 부분을 포함한다. 이어서, 폴리머에 대해 경화 단계가 수행된다. 경화 단계 후에, 폴리머의 제3 부분이 쏘잉되어 제1 및 제2 패키지 컴포넌트 사이에 트렌치를 형성한다.
Description
본 발명은 패키징 공정에서 언더필 쏘잉 방법에 관한 것이다.
집적 회로의 패키징에서, 내부에 복수 개의 인터포저(interposer)를 포함하는 인터포저 웨이퍼 상에 복수 개의 다이가 접합될 수 있다. 다이의 접합 후에, 다이와 인터포저 웨이퍼 사이의 간극 내로 언더필(underfill)이 분배될 수 있다. 이어서, 언더필을 경화시키도록 경화 공정이 수행될 수 있다.
언더필은 경화 후에 수축될 수 있다는 것을 알았다. 그 결과, 경화된 언더필은 다이와 인터포저 웨이퍼 상에 힘을 가하고, 이에 따라 인터포저 웨이퍼에 휨(warpage)이 생기게 할 수 있다. 인터포저 웨이퍼의 휨은 또한 후속 공정들에서 공정 어려움을 초래한다. 예컨대, 후속 공정(예컨대, 몰딩, 연마, 박막 등)에서, 인터포저 웨이퍼는 진공을 통해 척 테이블 상에 고정될 필요가 있다. 그러나, 휨이 있는 인터포저 웨이퍼의 경우에, 인터포저 웨이퍼가 척 테이블 상에 고정될 수가 없다.
본 발명은 종래 기술에서의 문제점을 극복 또는 경감하기 위한 것이다.
실시예들 및 그 이점의 보다 완벽한 이해를 위해, 첨부 도면과 함께 취한 이하의 설명을 참조하기로 한다. 도면에서:
도 1 내지 도 7c는 다양한 예시적인 실시예에 따른 패키지의 제조에서 중간 단계들의 단면도 및 평면도를 포함한다.
도 1 내지 도 7c는 다양한 예시적인 실시예에 따른 패키지의 제조에서 중간 단계들의 단면도 및 평면도를 포함한다.
본 개시의 실시예의 제조 및 이용이 아래에서 상세하게 논의된다. 그러나, 실시예는 광범위한 특정한 상황에서 실현될 수 있는 많은 적용 가능한 본 발명의 개념을 제공한다는 것을 알아야 한다. 논의되는 특정한 실시예는 단순히 설명을 위한 것이고, 본 개시의 범위를 제한하지 않는다.
다양한 실시예들에 따른 집적 회로의 패키징 방법이 제공된다. 예시적인 실시예에 따른 3차원 집적 회로(3DIC; three-dimensional integrated circuit) 패키지를 형성하는 중간 단계들이 설명된다. 실시예들의 변형예가 논의된다. 여러 도면들 및 예시적인 실시예에 걸쳐, 동일한 참조 번호가 동일한 요소를 가리키도록 사용된다.
도 1 내지 도 7c는 몇몇 예시적인 실시예에 따른 집적 회로의 패키징에서 중간 단계들의 단면도이다. 도 1은 패키지 컴포넌트(20)의 단면도를 도시하고 있다. 패키지 컴포넌트(20)는 기판(22)을 포함할 수 있다. 몇몇 실시예에서, 기판(22)은 반도체 기판이고, 이 반도체 기판은 또한 결정 실리콘 기판일 수 있지만, 실리콘 게르마늄, 실리콘 탄소 등과 같은 다른 반도체 재료를 포함할 수 있다. 변형예에서, 기판(22)은 유전체 기판이다. 패키지 컴포넌트(20)는 디바이스 웨이퍼일 수 있고, 디바이스 웨이퍼는 반도체 기판(22)의 표면(22A)에 형성되는 트랜지스터(도시 생략) 등의 액티브 디바이스를 포함한다. 패키지 컴포넌트(20)가 디바이스 웨이퍼일 때에, 레지스터 및/또는 캐패시터 등의 패시브 디바이스(도시 생략)를 또한 포함할 수 있다. 변형예에서, 패키지 컴포넌트(20)는 액티브 디바이스를 내부에 구비하지 않는 인터포저 웨이퍼이다. 이들 변형예에서, 패키지 컴포넌트(20)는 내부에 형성된 패시브 디바이스를 포함할 수 있다. 기판(22)의 상부면(22A)으로부터 기판(22) 내로 연장하도록 관통 기판 비아(24)(TV; Through-Substrate Via)가 형성될 수 있다. TV(24)는 또한 때때로 실리콘 기판에 형성될 때에 관통 실리콘 비아로서 지칭된다. 패키지 컴포넌트(20)는 서로 동일할 수 있는 복수 개의 패키지 컴포넌트(40)를 포함한다. 이웃한 패키지 컴포넌트(40) 사이에 복수 개의 스크라이브 라인(42)이 배치된다. 패키지 컴포넌트(40)는 디바이스 다이(칩으로서도 공지됨), 인터포저 다이 등일 수 있다.
상호 연결 구조(28)가 반도체 기판(22) 위에 형성되고, 집적 회로 디바이스 및/또는 TV(24)에 전기적으로 연결하도록 사용된다. 상호 연결 구조(28)는 복수 개의 유전체층(30)을 포함할 수 있다. 유전체층(30)에는 금속 라인(32)이 형성된다. 위에 있는 금속 라인(32)과 아래에 있는 금속 라인(32) 사이에 비아(34)가 형성되어 이들 금속 라인을 상호 연결시킨다. 금속 라인(32)과 비아(34)는 때때로 재분배층(Redistribution Layer; RDL)(32/34)으로 지칭된다. 몇몇 실시예에서, 유전체층(30)은 실리콘 산화물, 실리콘 질화물, 실리콘 탄화물, 실리콘 산질화물, 그 조합 및/또는 그 다층을 포함한다. 별법으로서, 유전체층(30)은 로우 k 값을 갖는 하나 이상의 로우 k 유전체층을 포함할 수 있다. 유전체층(30)에서 로우 k 유전체 재료의 k 값은 예컨대 약 3.0보다 낮거나, 약 2.5보다 낮을 수 있다.
패키지 컴포넌트(20)의 상부면에는 커넥터(38)가 형성된다. 몇몇 실시예에서, 커넥터(38)는 금속 필라를 포함하고, 솔더 캡이 금속 필라의 상부면 상에 형성되거나 형성되지 않을 수 있다. 변형예에서, 커넥터(38)는 솔더 구역을 포함한다. 또 다른 실시예에서, 커넥터(38)는 구리 포스트, 니켈층, 솔더 캡, 무전해 니켈 금도금(ENIG; Electroless Nickel Immersion Gold), 무전해 니켈 무전해 팔라듐 금도금(ENEPIG; Electroless Nickel Electroless Palladium Immersion Gold) 등을 포함하는 복합 범프일 수 있다.
도 2를 참조하면, 패키지 컴포넌트(44)는 예컨대 플립-칩 접합을 통해 패키지 컴포넌트(40)에 접합된다. 이에 따라, 커넥터(38)는 패키지 컴포넌트(4)에서의 회로를 패키지 컴포넌트(20)에서의 RDL(32/34) 및 TV(24)에 전기적으로 연결시킬 수 있다. 패키지 컴포넌트(44)는 로직 회로, 메모리 회로 등을 포함하는 디바이스 다이일 수 있다. 따라서, 패키지 컴포넌트(44)는 이하에서 다이(44)로서 달리 지칭된다. 대안적으로, 패키지 컴포넌트(44)는 각각의 인터포저, 패키지 기판 등에 접합되는 다이를 포함하는 패키지를 구비할 수 있다. 각 다이(40)에는 2개 이상의 다이(44)가 상부에 접합될 수 있다.
다음에, 도 3에 도시된 바와 같이, 폴리머(52)는 다이(44)와 패키지 컴포넌트(20) 사이의 공간(간극) 내로 분배된다. 폴리머(52)는 언더필(52)일 수 있고, 이에 따라 이후에는 언더필(52)로서 지칭되지만, 또한 에폭시 등의 다른 폴리머를 포함할 수 있다. 언더필(52)은 또한 몰딩 언더필일 수 있다. 언더필(52)은 또한 동일한 패키지 컴포넌트(40)에 접합되는 이웃한 다이(44)들 사이의 간극(도 2에서 45로 마킹됨) 내로 충전된다. 언더필(52)은 상이한 패키지 컴포넌트(40)에 접합되는 이웃한 다이(44)들 사이에 있는 간극(47)으로는 충전되지 않을 수 있다. 별법으로서, 언더필(52)은 간극(47) 내로 충전될 수 있다.
이어서, 언더필(52)은 경화 공정에서 경화된다. 경화 공정 후에, 언더필(52)은 부분적으로 경화되거나 완전히 경화된다. 부분 경화 또는 완전 경화 후에, 언더필(52)은 경화 공정 전보다 더 단단해진다. 부분 경화는 언더필(52)의 완전한 고형화를 초래하지 않을 수 있다. 언더필(52)의 부분 경화 중에, 언더필(52)은 수축(축소)될 수 있고, 부분 경화는 적어도 언더필(52)이 완전히 수축되게 하지 않을 수 있다. 결과적인 언더필(52)은 부분 경화 후에 여전히 겔로서 나타날 수 있다. 몇몇 실시예에서, 경화 공정은 열 경화 공정을 이용하여 수행된다. 이 실시예에서, 부분 경화는 완전 경화 언더필(52)에 요구되는 각각의 온도 및 시간 기간보다 낮은 온도 및/또는 짧은 시간 기간을 이용하여 수행된다. 몇몇의 예시적인 실시예에 따르면, 부분 경화는 약 80℃ 내지 약 120℃의 온도에서 수행될 수 있다. 예시적인 부분 경화 단계의 기간은 약 1시간 내지 3시간일 수 있다. 요망하는 부분 경화 조건이 언더필(52)의 타입에 대해 관련될 수 있다. 더욱이, 자외선(UV) 경화 등의 다른 경화 방법이 언더필(52)의 타입에 따라 사용될 수 있다. 경화 공정이 완전 경화 공정일 때에, 언더필(52)은 완전히 고형화된다.
도 4a 내지 도 4c에 도시된 바와 같이, 트렌치(54)를 형성하도록 언더필(52)에 쏘잉 단계가 수행된다. 쏘잉 단계는 레이저 또는 블레이드(도시 생략)를 이용하여 수행될 수 있다. 몇몇 실시예에서, 트렌치(54)는 동일한 다이(40)에 접합되는 이웃한 다이(44)들 사이에 형성된다. 상이한 다이(40)에 접합되는 이웃한 다이(44)들 사이의 간극(47; 도 3) 내로 언더필(52)이 또한 충전될 때에, 트렌치(54)가 또한 상이한 다이(40)에 접합되는 이웃한 다이(44)들을 결합시키는 언더필 부분을 절단하도록 형성될 수 있다. 몇몇 실시예에서, 트렌치(54)의 측벽(54B) 부분은 패키지 컴포넌트(20)의 상부면(20A)에 대해 실질적으로 수직이고, 이 측벽(54B) 부분은 이하에서 수직 측벽 부분으로서 지칭된다. 몇몇 실시예에서, 상기 수직 측벽 부분은 측벽(54B)의 상부를 포함한다.
몇몇의 예시적인 실시예에서, 트렌치(54)의 깊이(D)는 다이(44)의 상부면으로부터 패키지 컴포넌트(20)의 상부면(20A)까지 측정된 높이의 약 5% 내지 약 100%일 수 있다. 트렌치(54)의 폭(W)은 약 5 ㎛ 내지 약 500 ㎛일 수 있다. 트렌치(54) 바로 아래에 있는 언더필(52) 부분의 두께(T1)는 약 0 ㎛ 내지 약 700 ㎛일 수 있다. 도 4a에 도시된 바와 같이, 트렌치(54)의 바닥(54A)은 다이(44)의 바닥면(44A)과 실질적으로 동일한 높이일 수 있다. 대안적으로, 도 4B에 도시된 바와 같이, 바닥(54A)은 바닥면(44A)보다 높을 수 있다. 또한 도 4c에 도시된 바와 같이, 트렌치(54)의 바닥(54A)은 또한 바닥면(44A)보다 낮을 수 있고, 임의의 높이에서 패키지 컴포넌트(20)의 상부면(20A)보다 높을 수 있다.
다시 도 4를 참조하면, 몇몇 실시예에서, 트렌치(54)의 폭(W)은 이웃한 다이(44)들 사이의 간격(S)보다 작을 수 있다. 쏘잉 단계 후에, 언더필(52)의 일부가 다이(44) 중에 한쪽 또는 양쪽에 남을 수 있고, 트렌치(54)의 일면 또는 반대면에 있을 수 있다. 언더필(52)의 남아 있는 부분의 두께(T2)는 예컨대 약 0 ㎛ 내지 약 500 ㎛일 수 있다. 도 4b는 변형예에 따른 패키지를 도시하고 있는데, 트렌치(54)의 폭(W)은 이웃한 다이(44)들 사이의 간격(S)보다 클 수 있다. 따라서, 다이(44)의 부분이 쏘잉된다. 도 4c는 트렌치(54)의 폭(W)이 실질적으로 간격(S)과 동일한 또 다른 실시예를 도시하고 있다.
언더필(52)이 부분적으로 경화되는 실시예에서, 쏘잉 후에, 언더필(52)을 어닐링하고 경화하도록 열 단계(이하, 열 단계로서 지칭됨)가 수행된다. 열 단계는 유리 천이 온도보다 높은 온도에서 수행될 수 있다. 몇몇의 예시적인 실시예에 따르면, 열 단계의 온도는 약 140℃ 내지 약 170℃이다. 예시적인 열 단계의 기간은 약 1 시간 내지 3 시간일 수 있고, 예컨대 약 1.5 시간 내지 약 2.5 시간일 수 있다. 경화는 언더필(52)이 수축되게 할 수 있다. 언더필(52)이 쏘잉되지 않으면, 이웃한 다이(44)들 사이에 배치된 언더필(52) 부분이 이웃한 다이(44)를 서로를 향해 당겨서, 패키지 컴포넌트(20)의 휨을 유발할 수 있다. 그러나, 실시예에서, 쏘잉 단계가 수행되면, 언더필(52)의 수축은 이웃한 다이(44)들이 서로를 향해 더 이상 당겨지게 하지 않고, 언더필(52)의 경화에 의해 유발된 패키지 컴포넌트(20)의 휨이 적어도 줄어들고, 실질적으로 제거될 수 있다.
도 4d는 도 4a 내지 도 4c의 구조 부분의 평면도를 도시하고 있는데, 도 4a 내지 도 4c에 도시된 단면도는 도 4d의 평면 횡단선 4-4로부터 얻어진다. 도 4d에 도시된 바와 같이, 트렌치(54)는 언더필(52)의 한 에지와 대향 에지 범위 내에서 연장될 수 있고, 언더필(52)의 풀링력을 감소시키는 이점이 최대화될 수 있다.
다음에, 도 5a 내지 도 5c에 도시된 바와 같이, 폴리머(56)는 예컨대 압축 몰딩을 이용하여 다이(44)와 패키지 컴포넌트(20) 상에 몰딩된다. 도 5a, 도 5b 및 도 5c는 도 4a, 도 4b 및 도 4c에 도시된 구조로부터 각각 얻어진다. 몇몇 실시예에서, 폴리머(56)는 몰딩 화합물, 에폭시, 실리콘 등을 포함한다. 폴리머(56)는 트렌치(54) 내를 충전하는 제1 부분, 상이한 다이(40)에 접합되는 이웃한 다이(44)들 사이의 간격을 충전하는 제2 부분, 및 다이(44) 위의 제3 부분을 포함할 수 있다. 이어서, 폴리머(56)는 경화된다. 몇몇 실시예에서, 폴리머(56)의 경화 후에, 연마 등의 평탄화 단계가 폴리머(56)의 상부면을 동일한 높이로 하도록 수행될 수 있어, 제3 부분이 제거되어 다이(44)의 상부면이 노출된다.
도 6a 내지 도 6c는 패키지 컴포넌트(20)의 이면 구조의 형성을 도시하고 있다. 도 6a, 도 6b 및 도 6c는 도 5a, 도 5b 및 도 5c에 도시된 구조로부터 각각 얻어진다. 이면 구조의 형성에서, 도 5a, 도 5b 또는 도 5c에 도시된 패키지가 먼저 뒤집히고, 반도체 기판(22)이 위쪽을 향한다. 반도체 기판(22)의 이면에 이면 연마가 수행되어 TV(24)가 노출될 때까지 반도체 기판(22)을 얇게 만든다. 유전체층(또는 유전체층들)(60)이 반도체 기판(22)의 이면 상에 형성된다. 커넥터(58)가 또한 패키지 컴포넌트(20)의 이면 상에 형성되어 TV(24)에 전기적으로 연결된다. 몇몇 실시예에서, 커넥터(58)는 솔더 볼이다. 다른 실시예에서, 커넥터(58)는 메탈 패드, 메탈 범프, 솔더 캡 등을 포함할 수 있다. RDL이 패키지 컴포넌트(20)의 이면 및 유전체층(60)에 선택적으로 형성될 수 있는데, 특징부(59)는 RDL을 나타낸다. 커넥터(58)는 반도체 기판, 패키지 기판, 인쇄 회로 기판(PCB) 등일 수 있는 추가의 전기 컴포넌트(도시 생략)에 접합하도록 사용될 수 있다.
도 6a 내지 도 6c는 또한 패키지(64)를 형성하기 위한 다이 쏘잉 단계를 도시하고 있는데, 라인(66)은 절단 라인을 나타낸다. 도 6a, 도 6b 및 도 6c에서 구조로부터 얻어진 결과적인 패키지(64)가 도 7a, 도 7b 및 도 7c에 각각 도시되어 있다. 도 7a에서와 같이 결과적인 패키지(64)에서, 언더필(52)은 이웃한 다이(44)들 사이에 있는 상부면(52A)을 포함한다. 언더필(52)의 측벽(52B)은 폴리머(56) 아래에 있는 언더필(52) 부분의 상부면 및 상부면(52A)과 함께 단차부를 형성한다. 상부면(52A)과 측벽(52B)은 또한 평활한 천이부 대신에 가파른 천이부를 형성한다. 더욱이, 폴리머(56)와 언더필(52) 사이의 계면(52B)은 실질적으로 수직일 수 있다. 계면(52B)의 일부(상부 등)는 다이(40)의 상부면(20A)에 대해 실질적으로 수직일 수 있다. 계면(52B)은 폴리머(56)와 언더필(52)이 상이한 공정 단계들에서 형성된다는 점 및 폴리머(56)와 언더필(52)이 상이한 폴리머를 포함할 수 있다는 점에서 보인다. 도 7b에서, 폴리머(56)는 다이(44)의 쏘잉으로 인해 다이(44)의 일부 내로 연장된다. 도 7c에서, 폴리머(56)의 부분(56')은 이웃한 다이(44)들 간의 간격(S)과 실질적으로 동일한 폭(W)을 가질 수 있다.
실시예에 따르면, 언더필에 부분 경화 또는 완전 경화를 수행하고, 언더필을 쏘잉한 다음에, 언더필에 열 어닐링을 수행함으로써, 언더필 아래에 있는 웨이퍼의 휨이 상당히 감소된다. 제1 및 제2 샘플 웨이퍼로서 제1 및 제2 샘플 패키지를 각각 형성하도록 실험이 이루어졌다. 제1 및 제2 샘플 패키지를 형성하는 공정은, 제1 샘플 패키지를 형성할 때에 각각의 언더필에 대해 부분 경화와 쏘잉이 수행되지 않는다는 점을 제외하고 서로 유사하다. 제1 샘플 웨이퍼의 결과적인 휨은 약 800 ㎛이다. 비교로서, 부분 경화와 쏘잉 단계가 제2 샘플 패키지의 형성 중에 각각의 언더필에서 수행되었다. 제2 샘플 웨이퍼의 휨이 약 350 ㎛로 감소되었다. 이는 언더필의 부분 경화와 쏘잉이 웨이퍼들의 휨에서 상당한 감소를 유발할 수 있다는 것을 나타낸다.
실시예들에 따르면, 방법은 제1 및 제2 패키지 컴포넌트를 제3 패키지 컴포넌트의 상부면 상에 접합하고, 폴리머를 분배하는 것을 포함한다. 폴리머는 제1 및 제3 패키지 컴포넌트 사이의 공간에 있는 제1 부분과, 제2 및 제3 패키지 컴포넌트 사이의 공간에 있는 제2 부분과, 제1 및 제2 패키지 컴포넌트 사이의 간극에 있는 제3 부분을 포함한다. 이어서, 부분 경화가 폴리머에 대해 수행된다. 경화 후에, 폴리머의 제3 부분은 제1 및 제2 패키지 컴포넌트 사이에 트렌치를 형성하도록 쏘잉된다.
다른 실시예에 따르면, 방법은 제1 다이와 제2 다이를 웨이퍼의 복수 개의 다이들 각각의 상부면 상에 접합하고, 언더필을 제1 및 제2 다이와 웨이퍼 사이의 공간에 분배하는 것을 포함한다. 경화 단계는 언더필을 경화하도록 수행된다. 경화 단계 후에, 간극 내의 언더필 부분은 쏘잉되어 트렌치를 형성한다. 쏘잉 단계 후에, 열 단계가 수행되어 언더필을 어닐링한다.
또 다른 실시예에 따르면, 장치는 제1 패키지 컴포넌트와, 제2 패키지 컴포넌트 및 제1 패키지 컴포넌트의 상부면에 접합되는 제3 패키지 컴포넌트를 포함한다. 제1 폴리머 영역은 제1 패키지 컴포넌트의 제1 측벽과 접촉하는 제1 부분을 포함하고, 제1 부분은 제2 패키지 컴포넌트와 제3 패키지 컴포넌트 사이의 간극 내에 있다. 제2 폴리머 영역은 간극 내에 배치되고, 제2 폴리머는 제1 폴리머의 제1 부분의 측벽과 접촉하여 가시 계면을 형성한다. 가시 계면은 제1 패키지 컴포넌트의 상부면에 대해 실질적으로 수직인 부분을 포함한다.
본원 발명의 실시예들 및 그들이 가지는 이점에 대해서 상세하게 설명하였지만, 첨부된 특허청구범위에 의해서 규정되는 본 발명의 실시예의 사상 및 범위에서 벗어남이 없이 여러 가지 변화, 대체 및 변경이 이루어질 수 있다는 것을 알아야 한다. 또한, 본 발명의 범위는 본원 명세서에 기재된 공정, 장치, 제조 및 물질의 조성, 수단, 방법 및 단계들의 특정 실시예로 제한되지 않는다. 당업자가 본 개시로부터 명확하게 인식할 수 있는 바와 같이, 본원 명세서에 기재된 대응 실시예들과 실질적으로 동일한 결과를 달성할 수 있거나 실질적으로 동일한 기능을 수행하는 것으로서, 현재에 존재하는 또는 추후에 개발될, 공정, 장치, 제조, 물질의 조성, 수단, 방법, 또는 단계들이 본 개시에 따라서 이용될 수 있다. 따라서, 첨부된 특허청구범위가 그러한 공정, 장치, 제조, 물질의 조성, 수단, 방법 및 단계들을 포함하는 것으로 의도된다. 또한, 각 청구항들은 독립된 실시예를 구성하며, 여러 청구항들 및 실시예들의 조합도 본원 발명의 범위에 포함된다 할 것이다.
20, 40, 44: 패키지 컴포넌트 22: 기판
22A: 상부면 24: TV
28: 상호 연결 구조 30: 유전체층
34: 비아
22A: 상부면 24: TV
28: 상호 연결 구조 30: 유전체층
34: 비아
Claims (10)
- 제3 패키지 컴포넌트의 상부면 상에 제1 및 제2 패키지 컴포넌트를 접합하는 단계;
제1 폴리머를 분배하는 단계로서, 상기 제1 폴리머는,
상기 제1 및 제3 패키지 컴포넌트 사이의 공간에 있는 제1 부분;
상기 제2 및 제3 패키지 컴포넌트 사이의 공간에 있는 제2 부분; 및
상기 제1 및 제2 패키지 컴포넌트 사이의 간극에 있는 제3 부분
을 포함하는 것인 단계;
상기 제1 폴리머에 경화를 수행하는 단계; 및
상기 경화 후에, 상기 제1 및 제2 패키지 컴포넌트 사이에 트렌치를 형성하도록 제1 폴리머의 제3 부분을 쏘잉하는 단계를 포함하고, 상기 쏘잉 단계가 동시에 수행되는 것인 방법. - 제1항에 있어서, 상기 경화는 부분 경화이고, 상기 방법은 상기 제1 폴리머의 제3 부분을 쏘잉하는 단계 후에, 제1 폴리머를 완전 경화시키도록 열 단계를 수행하는 것을 더 포함하는 것인 방법.
- 제1항에 있어서, 상기 경화 단계 후에, 제1 폴리머는 완전 경화되는 것인 방법.
- 제1항에 있어서, 상기 쏘잉 단계 후에, 상기 제1, 제2 및 제3 패키지 컴포넌트를 제2 폴리머로 몰딩하는 단계를 더 포함하고, 상기 제2 폴리머는 트렌치 내로 충전되는 것인 방법.
- 웨이퍼의 복수 개의 다이 각각의 상부면 상에 제1 다이 및 제2 다이를 접합하는 단계;
상기 제1 및 제2 다이와 웨이퍼 사이의 공간에 언더필을 분배하는 단계로서, 상기 언더필은 제1 및 제2 다이 사이의 간극 내에 배치되는 부분을 포함하는 것인 단계;
상기 언더필을 경화시키도록 경화 단계를 수행하는 단계;
상기 경화 단계 후에, 트렌치를 형성하도록 언더필의 부분을 쏘잉하는 단계; 및
상기 쏘잉 단계 후에, 언더필을 어닐링하도록 열 단계를 수행하는 단계를 포함하는 것인 방법. - 제5항에 있어서, 상기 제1 다이, 제2 다이 및 웨이퍼 위에 몰딩 컴파운드를 몰딩하는 단계로서, 상기 몰딩 컴파운드는 트렌치 내로 충전되는 것인 단계; 및
상기 웨이퍼와 제1 및 제2 다이를 복수 개의 패키지로 쏘잉하는 단계
를 더 포함하고, 복수 개의 패키지 각각은 각자의 제1 다이 및 각자의 제2 다이를 포함하는 것인 방법. - 제6항에 있어서, 상기 몰딩 컴파운드를 몰딩하는 단계 후에 그리고 상기 웨이퍼를 쏘잉하는 단계 전에, 복수 개의 커넥터를 웨이퍼의 이면 상에 형성하는 단계를 더 포함하는 것인 방법.
- 제1 패키지 컴포넌트;
상기 제1 패키지 컴포넌트의 상부면 상에 접합되는 제2 패키지 컴포넌트 및 제3 패키지 컴포넌트;
상기 제1 패키지 컴포넌트의 제1 측벽과 접촉하는 제1 부분을 포함하는 제1 폴리머 영역으로서, 상기 제1 부분은 제2 패키지 컴포넌트와 제3 패키지 컴포넌트 사이의 간극 내에 있는 것인 제1 폴리머 영역; 및
상기 간극 내에 배치되는 제2 폴리머 영역을 포함하고, 상기 제2 폴리머는 제1 가시 계면을 형성하도록 제1 폴리머의 제1 부분의 측벽과 접촉하며, 상기 제1 가시 계면은 제1 패키지 컴포넌트의 상부면에 대해 수직인 부분을 포함하는 것인 디바이스. - 제8항에 있어서, 상기 제1 폴리머 영역은 간극 내의 제2 부분을 더 포함하고, 상기 제2 폴리머 영역은 제1 폴리머 영역의 제1 부분과 제2 부분 사이에 배치되며, 상기 제2 폴리머 영역은 제2 가시 계면을 형성하도록 제1 폴리머 영역의 제2 부분의 측벽과 접촉하고, 상기 제2 가시 계면은 제1 패키지 컴포넌트의 상부면에 대해 수직인 부분을 포함하는 것인 디바이스.
- 제8항에 있어서, 상기 제1 폴리머 영역과 제2 폴리머 영역은 상이한 폴리머를 포함하는 것인 디바이스.
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- 2012-07-12 TW TW101125106A patent/TWI464859B/zh active
- 2012-12-03 KR KR1020120138849A patent/KR101500038B1/ko active IP Right Grant
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2017
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2020
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Also Published As
Publication number | Publication date |
---|---|
CN103219293A (zh) | 2013-07-24 |
TWI464859B (zh) | 2014-12-11 |
KR101500038B1 (ko) | 2015-03-06 |
US20170213809A1 (en) | 2017-07-27 |
US20130187258A1 (en) | 2013-07-25 |
US20210125964A1 (en) | 2021-04-29 |
CN103219293B (zh) | 2015-06-24 |
US11637086B2 (en) | 2023-04-25 |
US9620430B2 (en) | 2017-04-11 |
US20210057383A1 (en) | 2021-02-25 |
TW201332083A (zh) | 2013-08-01 |
US10840215B2 (en) | 2020-11-17 |
US11631654B2 (en) | 2023-04-18 |
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