TWI712135B - 電子封裝件及其製法 - Google Patents

電子封裝件及其製法 Download PDF

Info

Publication number
TWI712135B
TWI712135B TW108133228A TW108133228A TWI712135B TW I712135 B TWI712135 B TW I712135B TW 108133228 A TW108133228 A TW 108133228A TW 108133228 A TW108133228 A TW 108133228A TW I712135 B TWI712135 B TW I712135B
Authority
TW
Taiwan
Prior art keywords
electronic
electronic components
item
patent application
scope
Prior art date
Application number
TW108133228A
Other languages
English (en)
Other versions
TW202114103A (zh
Inventor
黃玉龍
鄭子企
許元鴻
張宏達
陳麒任
Original Assignee
矽品精密工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 矽品精密工業股份有限公司 filed Critical 矽品精密工業股份有限公司
Priority to TW108133228A priority Critical patent/TWI712135B/zh
Priority to CN201910903530.XA priority patent/CN112510022A/zh
Priority to US16/867,937 priority patent/US11881459B2/en
Application granted granted Critical
Publication of TWI712135B publication Critical patent/TWI712135B/zh
Publication of TW202114103A publication Critical patent/TW202114103A/zh
Priority to US18/537,638 priority patent/US20240162169A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385—Assembly of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

一種電子封裝件，係包括複數電子元件、連結各該電子元件之間隔結構以及複數作為外部接點且電性連接該複數電子元件之導電元件，且該間隔結構係具有凹部，以加強該些電子元件於相互連結後的可撓性，避免翹曲之問題。本發明復提供該電子封裝件之製法。

Description

電子封裝件及其製法
本發明係有關一種半導體裝置，尤指一種可提升可靠度之電子封裝件及其製法。
隨著科技的演進，電子產品需求趨勢朝向異質整合邁進，為此，多晶片封裝結構(MCM/MCP)逐漸興起。
如第1圖所示之多晶片封裝結構1，係將複數半導體晶片11藉由複數銲錫凸塊13結合至一封裝基板10上，再形成包覆該複數半導體晶片11之封裝材料14。俾藉由將多顆半導體晶片封裝成一顆半導體晶片的特性，使其具有較多的I/O數，且可以大幅增加處理器的運算能力，減少訊號傳遞的延遲時間，以應用於高密度線路/高傳輸速度/高疊層數/大尺寸設計之高階產品。
然而，產品功能的多元化使封裝結構更加複雜，而複雜的結構在更小的體積內實現，這就導致結構變得更加脆弱，當封裝結構發生翹曲或者其它形變時，更加容易發生失效。此外，因其多晶片集結於一基板 的結構特色，隨著市場規格需求日新月變，其整體封裝結構尺寸也隨之愈做愈大，使得因翹曲所導致的脫層、球裂及晶片崩裂等問題日益嚴重。
因此，如何克服上述習知技術的問題，實已成目前亟欲解決的課題。
鑑於上述習知技術之種種缺失，本發明提供一種電子封裝件，係包括：複數電子元件；間隔結構，係形成於兩相鄰之該複數電子元件之間，以令該間隔結構連結相鄰之該電子元件，且該間隔結構形成有凹部；以及複數導電元件，係作為外部接點且電性連接該複數電子元件。
本發明復提供一種電子封裝件之製法，係包括：提供複數電子元件；形成間隔結構於兩相鄰之該複數電子元件之間，以令該間隔結構連結相鄰之電子元件；形成凹部於該間隔結構上；以及配置複數導電元件，以令該複數導電元件電性連接該複數電子元件，供作為外部接點。
前述之電子封裝件及其製法中，復包括配置具有相對兩側之承載結構，以令該承載結構之相對兩側之其中一者承載及電性連接該複數電子元件，且該複數導電元件係設置於該承載結構之相對兩側之另一者上。例如，該承載結構係為單一載板形式或多載板形式。進一步，該複數電子元件與該承載結構之間係形成有填充材，且該填充材復構成該間隔結構。
前述之電子封裝件及其製法中，復包括以封裝層包覆該複數電子元件，且該封裝層復構成該間隔結構。
前述之電子封裝件及其製法中，該電子元件係具有相對之作用面與非作用面及鄰接該作用面與非作用面之側面，以令該間隔結構連結該複數電子元件之側面。
前述之電子封裝件及其製法中，該間隔結構係包含複數材質。
前述之電子封裝件及其製法中，該凹部之壁面頂端處係呈斜面。進一步，該斜面係延伸至該電子元件。
前述之電子封裝件及其製法中，復包括結合至該複數電子元件上之散熱件，且該散熱件係遮蓋該凹部。進一步，該散熱件係藉由結合層結合至該複數電子元件上。例如，該結合層填入該凹部中但未填滿該凹部。
由上可知，本發明之電子封裝件及其製法，主要藉由將多個電子元件之相鄰兩者之間的間隔結構形成凹部，以加強該些電子元件於相互連結後的可撓性，故相較於習知技術，本發明能補償後續封裝製程中的熱變化及避免翹曲之問題。
1‧‧‧多晶片封裝結構
10‧‧‧封裝基板
11‧‧‧半導體晶片
13‧‧‧銲錫凸塊
14‧‧‧封裝材料
2,4,5‧‧‧電子封裝件
2a‧‧‧多晶片封裝體
20,40‧‧‧承載結構
200‧‧‧導電體
201,202‧‧‧載板
203‧‧‧底膠
21‧‧‧電子元件
21a‧‧‧作用面
21b‧‧‧非作用面
21c‧‧‧側面
210‧‧‧導電凸塊
22‧‧‧封裝層
22a‧‧‧第一表面
22b‧‧‧第二表面
23‧‧‧填充材
230‧‧‧凹槽
24‧‧‧導電元件
25‧‧‧結合層
26,56‧‧‧散熱件
260‧‧‧散熱體
261‧‧‧支撐腳
27‧‧‧黏著層
28,38a,38b,38c,58‧‧‧凹部
281‧‧‧第一開口
282‧‧‧第二開口
29,39b,39c,59‧‧‧間隔結構
a‧‧‧氣室
d1,d2‧‧‧寬度
L‧‧‧距離
P,P’‧‧‧斜面
S‧‧‧間隙
第1圖係為習知多晶片封裝結構之剖面示意圖。
第2A至2E圖係為本發明之電子封裝件之製法之剖視示意圖。
第2C’圖係為第2C圖之另一實施態樣之示意圖。
第2E’圖係為第2E圖之局部剖面放大圖。
第3A至3C圖係為本發明之電子封裝件之間隔結構之不同態樣之局部剖面放大圖。
第4及5圖係為本發明之電子封裝件之不同實施例之剖視示意圖。
以下藉由特定的具體實施例說明本發明之實施方式，熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知，本說明書所附圖式所繪示之結構、比例、大小等，均僅用以配合說明書所揭示之內容，以供熟悉此技藝之人士之瞭解與閱讀，並非用以限定本發明可實施之限定條件，故不具技術上之實質意義，任何結構之修飾、比例關係之改變或大小之調整，在不影響本發明所能產生之功效及所能達成之目的下，均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時，本說明書中所引用之如「上」、「下」、「第一」、「第二」及「一」等之用語，亦僅為便於敘述之明瞭，而非用以限定本發明可實施之範圍，其相對關係之改變或調整，在無實質變更技術內容下，當亦視為本發明可實施之範疇。
第2A至2E圖係為本發明之電子封裝件2之製法之剖面示意圖。
如第2A圖所示，提供一多晶片封裝體2a，其包括一承載結構20、複數電子元件21及一封裝層22。
所述之承載結構20可為透過複數導電體200(可由底膠203包覆)相互電性堆疊之多載板201,202之形式，或為單一載板形式(如第4圖所示之承載結構40係為封裝基板)，本實施例係以多載板形式進行說明，該載板例如為具有核心層與線路結構之封裝基板、無核心層(coreless)形式線路結構之封裝基板、具導電矽穿孔(Through-silicon via，簡稱TSV)之矽中介板(Through Silicon interposer，簡稱TSI)或其它板型，其包含至少一絕緣層及至少一結合該絕緣層之線路層，如至少一扇出(fan out)型重佈線路層(redistribution layer，簡稱RDL)。應可理解地，該承載結構20亦可為其它承載晶片之板材，如導線架(lead frame)、晶圓(wafer)、或其它具有金屬佈線(routing)之板體等，並不限於上述。
於本實施例中，該承載結構20之載板製程方式繁多，例如，可採用晶圓製程製作線路層，透過化學氣相沉積(Chemical vapor deposition，簡稱CVD)形成氮化矽或氧化矽以作為絕緣層；或者，可採用一般非晶圓製程方式形成線路層，即採用成本較低之高分子介電材作為絕緣層，如聚醯亞胺(Polyimide，簡稱PI)、聚對二唑苯(Polybenzoxazole，簡稱PBO)、預浸材(Prepreg，簡稱PP)、封裝膠體(molding compound)、感光型介電層或其它材質等以塗佈方式形成之。
再者，該承載結構20可於後續製程中在其下側形成複數導電元件24(如第2E圖所示)，供作為外部接點，以接置一如電路板之電子裝置(圖略)。具體地，該導電元件24可為如銅柱之金屬柱、包覆有絕緣塊之金屬凸塊、銲球(solder ball)、具有核心銅球(Cu core ball)之銲球或其它導電構造等。
所述之複數電子元件21係相互分離地配置於該承載結構20上側。
該電子元件21係為主動元件、被動元件或其組合者，其中，該主動元件係例如半導體晶片，而該被動元件係例如電阻、電容及電感。於本實施例中，該電子元件21係為半導體晶片，其具有相對之作用面21a與非作用面21b及鄰接該作用面21a與非作用面21b之側面21c，並使該作用面21a之電極墊藉由複數如銲錫材料、金屬柱(pillar)或其它等之導電凸塊210以覆晶方式設於該承載結構20上並電性連接該線路層，且以填充材23包覆該些導電凸塊210；或者，該電子元件21可藉由複數銲線(圖未示)以打線方式電性連接該承載結構20之線路層；亦或，該電子元件21可直接接觸該承載結構20之線路層。因此，可於該承載結構20上接置所需類型及數量之電子元件，以提升其電性功能，且有關電子元件21電性連接承載結構20之方式繁多，並不限於上述。
再者，該填充材23係形成於該承載結構20與該些電子元件21之間，以令該填充材23包覆該些導電凸塊210。於本實施例中，該填充材23係例如為底膠，其復形成於該些電子元件21之相鄰兩者之間的間隙S中。具體地，該填充材23因毛細作用而延伸至該電子元件21之側面21c上。
又，形成至少一凹槽230於該間隙S中之填充材23上。例如，以切割、雷射或蝕刻等方式移除部分填充材23以形成該凹槽230，且該凹槽230之寬度由槽口往其槽底可一致或不一致。具體地，該凹槽230可呈錐狀或漏斗狀，但並無特別限制。
所述之封裝層22係形成於該承載結構20上及該凹槽230中，以包覆該些電子元件21與該填充材23。
於本實施例中，該封裝層22係具有相對之第一表面22a與第二表面22b，並以該第一表面22a結合該承載結構20，且該電子元件21之非作用面21b齊平該封裝層22之第二表面22b，以令該些電子元件21外露於該封裝層22之第二表面22b。
再者，形成該封裝層22之材質係為絕緣材，如聚醯亞胺(PI)、環氧樹脂(epoxy)之封裝膠體，其可用模壓(molding)、壓合(lamination)或塗佈(coating)之方式形成之，以填滿該凹槽230，使該複數電子元件21之至少相鄰兩者之間形成有一間隔結構29，該間隔結構29係包含複數材質，如該封裝層22之材質及該填充材23等絕緣材。
另請參閱第3B及3C圖，於其它實施例中，間隔結構39b,39c可為單一材質所構成，如第3B圖所示之填充材23或如第3C圖所示之封裝層22之材質。應可理解地，該間隔結構亦可依需求佈設金屬材以作為該電子元件21之屏蔽層。
另外，該間隔結構29連結於相鄰該電子元件21之間，使該些電子元件21相互連結。
如第2B圖所示，形成至少一第一開口281於該間隔結構29上。
於本實施例中，藉由切割、雷射或蝕刻等方式進行半切作業，移除部分封裝層22及填充材23之材質以形成該第一開口281，且於該半切作業後，多個電子元件21的側面21c仍保有間隔結構29。
再者，該第一開口281之壁面係呈斜面P，且該斜面P延伸至該電子元件21之非作用面21b與該側面21c之鄰接邊角處，以形成倒角。或者，如第3C圖所示之凹部38c，該第一開口381之斜面P’未延伸至該電子元件21，以令該電子元件21之非作用面21b與該側面21c之鄰接邊角處仍呈尖銳角度，如直角。
如第2C圖所示，接續第2B圖所示，自該第一開口281處形成至少一第二開口282於該間隔結構29中之封裝層22上，使該第一與第二開口281,282作為凹部28。
於本實施例中，藉由切割、雷射或蝕刻等方式進行半切作業，移除部分封裝層22之材質以形成該第二開口282，且該第二開口282未貫穿該間隔結構29之封裝層22。
再者，如第2C及3C圖所示，該凹部28,38c之製程係包含多次半切作業(分別形成有第一與第二開口)，且第二次半切作業係切出平直側壁槽，以形成該第二開口282。或者，如第3A及3B圖所示，可藉由單一次半切作業形成該凹部38a,38b。
又，藉由該第一開口281,381之寬度d1大於該第二開口282之寬度d2之設計及第一開口281,381的斜面設計，以於製程中可將該第一開口281作為對位基準，而利於形成該第二開口282。
另外，如第2C’圖所示，於進行該凹部28之製程前，該承載結構20可先配置一中介板型載板202，待完成該凹部28之製程後，再將該中介板型載板202透過複數導電體200(可由底膠203包覆)電性堆疊於一封裝 基板型載板201上，以令相互電性堆疊之多載板201,202構成該承載結構20，如第2C圖所示。
如第2D圖所示，形成一結合層25於該電子元件21之非作用面21b及該封裝層22之第二表面22b上，並外露出該凹部28。
於本實施例中，該結合層25係為液態散熱膠材，以作為導熱介面材(Thermal Interface Material，簡稱TIM)。
如第2E及2E’圖所示，藉由該結合層25設置一散熱件26於該複數電子元件21之非作用面21b上，再熱固該結合層25。之後，形成複數導電元件24於該承載結構20下側，且該導電元件24電性連接該承載結構20。
於本實施例中，該散熱件26係具有一散熱體260與複數設於該散熱體260下側之支撐腳261，該散熱體260係為散熱片型式，並以下側接觸該結合層25，且該支撐腳261係藉由黏著層27結合於該承載結構20上。
再者，藉由該第一開口281,381之斜面P,P’以擴大相鄰該電子元件21上之結合層25之間的距離L，使該結合層25於該散熱體260壓合後分別佈設於各該電子元件21上而不會結合成一大面積片體(若該結合層25形成一大面積片體容易影響該電子封裝件2之結構撓性)。應可理解地，單一次半切製程製作該凹部38a,38b，需透過調控該結合層25之用量，以避免該結合層25連結成一大面積片體。
又，如第3A及3B圖所示，若該結合層25受該散熱件26擠壓後會半填入該凹部38a,38b中，該結合層25可作為該電子元件21因受熱變形、位移狀況的擋止層，使相鄰的電子元件21不會直接碰觸。
另外，有關本發明之電子封裝件2之種類繁多，並不限於上述。例如，第5圖所示之晶圓級晶片尺寸封裝(Wafer Level Chip Scale Packaging)形式之電子封裝件5，其中，嵌埋於封裝層22中之複數電子元件21之作用面21a上形成該複數導電元件24，其凸出該封裝層22之第一表面22a，供作為外部接點，以接置一如電路板之電子裝置(圖略)，其間隔結構59係為單一材質構成，凹部58係為單次半切製成，且散熱件56係為散熱片形式。
因此，本發明之製法係藉由將多個電子元件21之相鄰兩者之間的間隔結構29,39b,39c,59切割出凹部28,38a,38b,38c,58，以加強該些電子元件21於相互連結後的可撓性，故能補償後續封裝製程中的熱變化及避免翹曲(warpage)之問題。
再者，藉由該凹部28,38c之斜面P之設計，不僅能作為後續半切該第二開口282的位置導正作用，且可使後續製作之結合層25於相鄰兩者相互之間的距離L增長，以避免該結合層25完全覆蓋該凹部28,38c。
又，藉由該結合層25未完全覆蓋該凹部28,38c，以維持該些電子元件21於相互連結後的較佳可撓性。再者，即使該結合層25相連結成一大面積片體而完全覆蓋該凹部38a,38b，因該間隔結構29,39b中仍存在氣室a，故該些電子元件21於相互連結後仍具有符合需求的可撓性。
另外，於形成該凹部28,38a,38b,38c後，藉由保留於該電子元件21之側面21c的間隔結構29,39b,39c，以避免該電子元件21與承載結構20之間的填充材23發生脫層之問題。
本發明復提供一種電子封裝件2,4,5係包括：複數電子元件21、至少一連結該些電子元件21之間隔結構29,39b,39c,59以及複數作為外部接點且電性連接該複數電子元件21之導電元件24。
所述之間隔結構29,39b,39c,59係形成於該複數電子元件21之至少相鄰兩者之間，以令該間隔結構29,39b,39c,59連結於相鄰該電子元件21之間，其中，該間隔結構29,39b,39c,59係具有凹部28,38a,38b,38c,58。
於一實施例中，所述之電子封裝件2,4復包括一承載及電性連接該複數電子元件21之承載結構20,40，其具有相對兩側，以令該複數電子元件21設於該承載結構20,40之相對兩側之其中一者，且該複數導電元件24係設於該承載結構20之相對兩側之另一者上，以令該複數導電元件24藉由該承載結構20,40電性連接該複數電子元件21。例如，該承載結構20係為多載板形式，該承載結構40係為單一載板形式。進一步，該複數電子元件21與該承載結構20,40之間係形成有填充材23，且該填充材23復構成該間隔結構29,39b。
於一實施例中，所述之電子封裝件2,4,5復包括一包覆該複數電子元件21之封裝層22，且該封裝層22復構成該間隔結構29,39c,59。
於一實施例中，該電子元件21係具有相對之作用面21a與非作用面21b及鄰接該作用面21a與非作用面21b之側面21c，以令該間隔結構29,39b,39c,59連結該複數電子元件21之側面21c。
於一實施例中，該間隔結構29係包含複數材質。
於一實施例中，該凹部28,38a之壁面係呈斜面P,P’。進一步，該斜面P係延伸至該電子元件21。
於一實施例中，所述之電子封裝件2,4,5復包括一結合至該複數電子元件21上之散熱件26,56，其遮蓋該凹部28,38a,38b,38c,58。進一步，該散熱件26,56係藉由結合層25結合至該複數電子元件21上。例如，該結合層25填入該凹部28,38a,38b,38c,58中但未填滿該凹部28,38a,38b,38c,58。
於一實施例中，所述之電子封裝件5之導電元件24係直接電性連接該複數電子元件21。
綜上所述，本發明之電子封裝件及其製法，主要藉由該間隔結構之凹部之設計，以加強該些電子元件於相互連結後的可撓性，故能補償後續封裝製程中的熱變化及避免翹曲之問題，以提升該電子封裝件之可靠度。
上述實施例係用以例示性說明本發明之原理及其功效，而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下，對上述實施例進行修改。因此本發明之權利保護範圍，應如後述之申請專利範圍所列。
2‧‧‧電子封裝件
20‧‧‧承載結構
21‧‧‧電子元件
21b‧‧‧非作用面
22‧‧‧封裝層
22a‧‧‧第一表面
22b‧‧‧第二表面
23‧‧‧填充材
24‧‧‧導電元件
25‧‧‧結合層
26‧‧‧散熱件
260‧‧‧散熱體
261‧‧‧支撐腳
27‧‧‧黏著層
28‧‧‧凹部
29‧‧‧間隔結構
L‧‧‧距離

Claims (22)

  1. 一種電子封裝件，係包括：複數電子元件；間隔結構，係形成於任兩相鄰之該複數電子元件之間，且令該間隔結構連結該任兩相鄰之電子元件，該間隔結構形成有凹部；結合層，係形成於該複數電子元件上以完全覆蓋該凹部並填入該凹部中但未填滿該凹部，使該凹部中具有氣室；以及複數導電元件，係作為外部接點且電性連接該複數電子元件。
  2. 如申請專利範圍第1項所述之電子封裝件，復包括承載及電性連接該複數電子元件之承載結構，其具有相對兩側，以令該複數電子元件設於該承載結構之相對兩側之其中一者，且該複數導電元件係設於該承載結構之相對兩側之另一者上。
  3. 如申請專利範圍第2項所述之電子封裝件，其中，該承載結構係為單一載板形式或多載板形式。
  4. 如申請專利範圍第2項所述之電子封裝件，其中，該複數電子元件與該承載結構之間係形成有填充材，且該填充材復構成該間隔結構。
  5. 如申請專利範圍第1項所述之電子封裝件，復包括包覆該複數電子元件之封裝層，且該封裝層復構成該間隔結構。
  6. 如申請專利範圍第1項所述之電子封裝件，其中，該電子元件係具有相對之作用面與非作用面及鄰接該作用面與非作用面之側面，以令該間隔結構連結該複數電子元件之側面。
  7. 如申請專利範圍第1項所述之電子封裝件，其中，該間隔結構係包含複數材質。
  8. 如申請專利範圍第1項所述之電子封裝件，其中，該凹部之壁面頂端處係呈斜面。
  9. 如申請專利範圍第8項所述之電子封裝件，其中，該斜面係延伸至相鄰之該電子元件。
  10. 如申請專利範圍第1項所述之電子封裝件，復包括結合至該複數電子元件上之散熱件，其遮蓋該凹部。
  11. 如申請專利範圍第10項所述之電子封裝件，其中，該散熱件係藉由該結合層結合至該複數電子元件上。
  12. 一種電子封裝件之製法，係包括：提供複數電子元件；形成間隔結構於任兩相鄰之該複數電子元件之間，以令該間隔結構連結該任兩相鄰之電子元件；形成凹部於該間隔結構上；形成結合層於該複數電子元件上，以令該結合層完全覆蓋該凹部並填入該凹部中但未填滿該凹部，使該凹部中具有氣室；以及配置複數導電元件，以令該複數導電元件電性連接該複數電子元件，供作為外部接點。
  13. 如申請專利範圍第12項所述之電子封裝件之製法，復包括配置具有相對兩側之承載結構，以令該承載結構之相對兩側之其中一者承 載及電性連接該複數電子元件，且該複數導電元件係設置於該承載結構之相對兩側之另一者上。
  14. 如申請專利範圍第13項所述之電子封裝件之製法，其中，該承載結構係為單一載板形式或多載板形式。
  15. 如申請專利範圍第13項所述之電子封裝件之製法，其中，該複數電子元件與該承載結構之間係形成有填充材，且該填充材復構成該間隔結構。
  16. 如申請專利範圍第12項所述之電子封裝件之製法，復包括以封裝層包覆該複數電子元件，且該封裝層復構成該間隔結構。
  17. 如申請專利範圍第12項所述之電子封裝件之製法，其中，該電子元件係具有相對之作用面與非作用面及鄰接該作用面與非作用面之側面，以令該間隔結構連結該複數電子元件之側面。
  18. 如申請專利範圍第12項所述之電子封裝件之製法，其中，該間隔結構係包含複數材質。
  19. 如申請專利範圍第12項所述之電子封裝件之製法，其中，該凹部之壁面頂端處係呈斜面。
  20. 如申請專利範圍第19項所述之電子封裝件之製法，其中，該斜面係延伸至相鄰之該電子元件。
  21. 如申請專利範圍第12項所述之電子封裝件之製法，復包括結合散熱件至該複數電子元件上，且該散熱件係遮蓋該凹部。
  22. 如申請專利範圍第21項所述之電子封裝件之製法，其中，該散熱件係藉由該結合層結合至該複數電子元件上。
TW108133228A 2019-09-16 2019-09-16 電子封裝件及其製法 TWI712135B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW108133228A TWI712135B (zh) 2019-09-16 2019-09-16 電子封裝件及其製法
CN201910903530.XA CN112510022A (zh) 2019-09-16 2019-09-24 电子封装件及其制法
US16/867,937 US11881459B2 (en) 2019-09-16 2020-05-06 Electronic package and fabrication method thereof
US18/537,638 US20240162169A1 (en) 2019-09-16 2023-12-12 Electronic package and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW108133228A TWI712135B (zh) 2019-09-16 2019-09-16 電子封裝件及其製法

Publications (2)

Publication Number Publication Date
TWI712135B true TWI712135B (zh) 2020-12-01
TW202114103A TW202114103A (zh) 2021-04-01

Family

ID=74669844

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108133228A TWI712135B (zh) 2019-09-16 2019-09-16 電子封裝件及其製法

Country Status (3)

Country Link
US (2) US11881459B2 (zh)
CN (1) CN112510022A (zh)
TW (1) TWI712135B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI753686B (zh) * 2020-12-04 2022-01-21 矽品精密工業股份有限公司 電子封裝件及其製法
TWI769800B (zh) * 2021-02-26 2022-07-01 台灣積體電路製造股份有限公司 用於半導體元件的封裝結構

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220029987A (ko) * 2020-09-02 2022-03-10 에스케이하이닉스 주식회사 3차원 구조의 반도체 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200910471A (en) * 2007-08-17 2009-03-01 Chipmos Technologies Inc A dice rearrangement package method
TW201633489A (zh) * 2015-03-06 2016-09-16 矽品精密工業股份有限公司 電子封裝件及其製法
TW201639085A (zh) * 2015-04-24 2016-11-01 矽品精密工業股份有限公司 電子封裝件之製法及電子封裝結構
TW201917865A (zh) * 2017-10-26 2019-05-01 台灣積體電路製造股份有限公司 高速傳輸互連訊號之半導體結構及其製造方法
TW201926588A (zh) * 2017-12-08 2019-07-01 矽品精密工業股份有限公司 電子封裝件及其製法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794273B2 (en) * 2002-05-24 2004-09-21 Fujitsu Limited Semiconductor device and manufacturing method thereof
KR100703090B1 (ko) * 2005-08-30 2007-04-06 삼성전기주식회사 후면 접지형 플립칩 반도체 패키지
JPWO2008105535A1 (ja) * 2007-03-01 2010-06-03 日本電気株式会社 半導体装置及びその製造方法
US20110221053A1 (en) * 2010-03-11 2011-09-15 Qualcomm Incorporated Pre-processing to reduce wafer level warpage
US8643148B2 (en) * 2011-11-30 2014-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Chip-on-Wafer structures and methods for forming the same
US9620430B2 (en) * 2012-01-23 2017-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Sawing underfill in packaging processes
US9607951B2 (en) * 2013-08-05 2017-03-28 Mediatek Singapore Pte. Ltd. Chip package
US9633869B2 (en) * 2013-08-16 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Packages with interposers and methods for forming the same
US9184139B2 (en) * 2013-12-17 2015-11-10 Stats Chippac, Ltd. Semiconductor device and method of reducing warpage using a silicon to encapsulant ratio
US9406650B2 (en) * 2014-01-31 2016-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of packaging semiconductor devices and packaged semiconductor devices
US20150287697A1 (en) * 2014-04-02 2015-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Device and Method
TWI595613B (zh) * 2014-11-18 2017-08-11 矽品精密工業股份有限公司 半導體封裝件及其製法
US9446941B2 (en) * 2014-12-12 2016-09-20 Apple Inc. Method of lower profile MEMS package with stress isolations
TW201640590A (zh) * 2015-05-04 2016-11-16 矽品精密工業股份有限公司 電子封裝件及其製法
US11688634B2 (en) * 2019-07-30 2023-06-27 Intel Corporation Trenches in wafer level packages for improvements in warpage reliability and thermals
TWI710094B (zh) * 2019-09-10 2020-11-11 矽品精密工業股份有限公司 電子封裝件及其製法
KR20220072458A (ko) * 2020-11-25 2022-06-02 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
TWI734651B (zh) * 2020-11-27 2021-07-21 矽品精密工業股份有限公司 電子封裝件及其製法
TWI753686B (zh) * 2020-12-04 2022-01-21 矽品精密工業股份有限公司 電子封裝件及其製法
KR20220135452A (ko) * 2021-03-30 2022-10-07 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200910471A (en) * 2007-08-17 2009-03-01 Chipmos Technologies Inc A dice rearrangement package method
TW201633489A (zh) * 2015-03-06 2016-09-16 矽品精密工業股份有限公司 電子封裝件及其製法
TW201639085A (zh) * 2015-04-24 2016-11-01 矽品精密工業股份有限公司 電子封裝件之製法及電子封裝結構
TW201917865A (zh) * 2017-10-26 2019-05-01 台灣積體電路製造股份有限公司 高速傳輸互連訊號之半導體結構及其製造方法
TW201926588A (zh) * 2017-12-08 2019-07-01 矽品精密工業股份有限公司 電子封裝件及其製法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI753686B (zh) * 2020-12-04 2022-01-21 矽品精密工業股份有限公司 電子封裝件及其製法
TWI769800B (zh) * 2021-02-26 2022-07-01 台灣積體電路製造股份有限公司 用於半導體元件的封裝結構
US11557559B2 (en) 2021-02-26 2023-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure

Also Published As

Publication number Publication date
US20240162169A1 (en) 2024-05-16
US11881459B2 (en) 2024-01-23
TW202114103A (zh) 2021-04-01
US20210082837A1 (en) 2021-03-18
CN112510022A (zh) 2021-03-16

Similar Documents

Publication Publication Date Title
TWI645527B (zh) 電子封裝件及其製法
TW201714275A (zh) 半導體封裝結構及其形成方法
US9875949B2 (en) Electronic package having circuit structure with plurality of metal layers, and fabrication method thereof
TWI712135B (zh) 電子封裝件及其製法
TW201436161A (zh) 半導體封裝件及其製法
US11382214B2 (en) Electronic package, assemble substrate, and method for fabricating the assemble substrate
US11610850B2 (en) Electronic package and fabrication method thereof
CN112563215A (zh) 电子封装件及其制法
CN108987355B (zh) 电子封装件及其制法
TWI734401B (zh) 電子封裝件
TWI733142B (zh) 電子封裝件
TWI706523B (zh) 電子封裝件
TW202139375A (zh) 電子封裝件
TWI714269B (zh) 電子封裝件及其製法
TW202209507A (zh) 電子封裝件及其製法
CN113594105A (zh) 电子封装件及其制法
US11201142B2 (en) Semiconductor package, package on package structure and method of froming package on package structure
TWI839645B (zh) 電子封裝件及其製法
TW202029448A (zh) 電子封裝件及其封裝基板與製法
TWI796694B (zh) 電子封裝件及其製法
US20230111192A1 (en) Electronic package and manufacturing method thereof
US20240162101A1 (en) Electronic package and manufacturing method thereof
TW201810589A (zh) 電子封裝件之製法
TWI480988B (zh) 封裝基板板片結構、封裝基板、半導體封裝件及其製法
TW202046468A (zh) 電子封裝件及其製法