KR20130007649A - 반도체 나노결정을 포함하는 발광 디바이스 - Google Patents
반도체 나노결정을 포함하는 발광 디바이스 Download PDFInfo
- Publication number
- KR20130007649A KR20130007649A KR1020127029292A KR20127029292A KR20130007649A KR 20130007649 A KR20130007649 A KR 20130007649A KR 1020127029292 A KR1020127029292 A KR 1020127029292A KR 20127029292 A KR20127029292 A KR 20127029292A KR 20130007649 A KR20130007649 A KR 20130007649A
- Authority
- KR
- South Korea
- Prior art keywords
- nanocrystals
- layer
- semiconductor
- light emitting
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004054 semiconductor nanocrystal Substances 0.000 title claims abstract description 49
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 20
- 239000011147 inorganic material Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 abstract description 33
- 239000010410 layer Substances 0.000 description 121
- 239000002159 nanocrystal Substances 0.000 description 86
- 239000000463 material Substances 0.000 description 51
- 239000000758 substrate Substances 0.000 description 49
- 150000001875 compounds Chemical class 0.000 description 21
- 238000000151 deposition Methods 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 21
- 239000002904 solvent Substances 0.000 description 20
- 230000012010 growth Effects 0.000 description 18
- 229910044991 metal oxide Inorganic materials 0.000 description 18
- 150000004706 metal oxides Chemical class 0.000 description 18
- 239000002356 single layer Substances 0.000 description 18
- -1 chalcogenide compound Chemical class 0.000 description 16
- 238000009826 distribution Methods 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 230000005525 hole transport Effects 0.000 description 13
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 8
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000007983 Tris buffer Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 description 5
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical class CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 229910052716 thallium Inorganic materials 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical group C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 4
- 229910004613 CdTe Inorganic materials 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 4
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 3
- 150000001786 chalcogen compounds Chemical class 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000001194 electroluminescence spectrum Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000001072 heteroaryl group Chemical group 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- 238000000813 microcontact printing Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 229960005419 nitrogen Drugs 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 3
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 3
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910017680 MgTe Inorganic materials 0.000 description 2
- 229910002665 PbTe Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000304 alkynyl group Chemical group 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical group [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical group [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 125000004076 pyridyl group Chemical group 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052950 sphalerite Inorganic materials 0.000 description 2
- 239000011593 sulfur Chemical group 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 125000006555 (C3-C5) cycloalkyl group Chemical group 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 1
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 1
- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 description 1
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 description 1
- LLTSIOOHJBUDCP-UHFFFAOYSA-N 3,4,5-triphenyl-1,2,4-triazole Chemical compound C1=CC=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=CC=C1 LLTSIOOHJBUDCP-UHFFFAOYSA-N 0.000 description 1
- ADENFOWRGOZGCW-UHFFFAOYSA-N 3,5-bis(4-tert-butylphenyl)-4-phenyl-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C(C)(C)C)C=C1 ADENFOWRGOZGCW-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- YICAEXQYKBMDNH-UHFFFAOYSA-N 3-[bis(3-hydroxypropyl)phosphanyl]propan-1-ol Chemical compound OCCCP(CCCO)CCCO YICAEXQYKBMDNH-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 241000532412 Vitex Species 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- IBQKNIQGYSISEM-UHFFFAOYSA-N [Se]=[PH3] Chemical class [Se]=[PH3] IBQKNIQGYSISEM-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- YJLNSAVOCPBJTN-UHFFFAOYSA-N antimony;thallium Chemical compound [Tl]#[Sb] YJLNSAVOCPBJTN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- RLECCBFNWDXKPK-UHFFFAOYSA-N bis(trimethylsilyl)sulfide Chemical compound C[Si](C)(C)S[Si](C)(C)C RLECCBFNWDXKPK-UHFFFAOYSA-N 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 235000009347 chasteberry Nutrition 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001212 derivatisation Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 1
- 150000002240 furans Chemical class 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000005059 halophenyl group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000000592 heterocycloalkyl group Chemical group 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical group [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical group 0.000 description 1
- ORTFAQDWJHRMNX-UHFFFAOYSA-N hydroxidooxidocarbon(.) Chemical group O[C]=O ORTFAQDWJHRMNX-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- QENHCSSJTJWZAL-UHFFFAOYSA-N magnesium sulfide Chemical compound [Mg+2].[S-2] QENHCSSJTJWZAL-UHFFFAOYSA-N 0.000 description 1
- AZUPEYZKABXNLR-UHFFFAOYSA-N magnesium;selenium(2-) Chemical compound [Mg+2].[Se-2] AZUPEYZKABXNLR-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- HFKCBYKPNCPRPB-UHFFFAOYSA-N n,n-diphenyl-4-(5-phenyl-1,3,4-oxadiazol-2-yl)aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1OC(=NN=1)C=1C=CC=CC=1)C1=CC=CC=C1 HFKCBYKPNCPRPB-UHFFFAOYSA-N 0.000 description 1
- NYZSNEVPYZZOFN-UHFFFAOYSA-N n,n-diphenyl-4-[5-[3-[5-[4-(n-phenylanilino)phenyl]-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazol-2-yl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1OC(=NN=1)C=1C=C(C=CC=1)C=1OC(=NN=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 NYZSNEVPYZZOFN-UHFFFAOYSA-N 0.000 description 1
- HWJHZLJIIWOTGZ-UHFFFAOYSA-N n-(hydroxymethyl)acetamide Chemical compound CC(=O)NCO HWJHZLJIIWOTGZ-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000006501 nitrophenyl group Chemical group 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910000487 osmium oxide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- JIWAALDUIFCBLV-UHFFFAOYSA-N oxoosmium Chemical compound [Os]=O JIWAALDUIFCBLV-UHFFFAOYSA-N 0.000 description 1
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910003450 rhodium oxide Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- YQMLDSWXEQOSPP-UHFFFAOYSA-N selanylidenemercury Chemical compound [Hg]=[Se] YQMLDSWXEQOSPP-UHFFFAOYSA-N 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- MFIWAIVSOUGHLI-UHFFFAOYSA-N selenium;tin Chemical compound [Sn]=[Se] MFIWAIVSOUGHLI-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- QXKXDIKCIPXUPL-UHFFFAOYSA-N sulfanylidenemercury Chemical compound [Hg]=S QXKXDIKCIPXUPL-UHFFFAOYSA-N 0.000 description 1
- WSANLGASBHUYGD-UHFFFAOYSA-N sulfidophosphanium Chemical class S=[PH3] WSANLGASBHUYGD-UHFFFAOYSA-N 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- ZTBJFXYWWZPTFM-UHFFFAOYSA-N tellanylidenemagnesium Chemical compound [Te]=[Mg] ZTBJFXYWWZPTFM-UHFFFAOYSA-N 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 229910003438 thallium oxide Inorganic materials 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WYUZTTNXJUJWQQ-UHFFFAOYSA-N tin telluride Chemical compound [Te]=[Sn] WYUZTTNXJUJWQQ-UHFFFAOYSA-N 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- IYMHCKVVJXJPDB-UHFFFAOYSA-N tributyl(selanylidene)-$l^{5}-phosphane Chemical compound CCCCP(=[Se])(CCCC)CCCC IYMHCKVVJXJPDB-UHFFFAOYSA-N 0.000 description 1
- FKIZDWBGWFWWOV-UHFFFAOYSA-N trimethyl(trimethylsilylselanyl)silane Chemical compound C[Si](C)(C)[Se][Si](C)(C)C FKIZDWBGWFWWOV-UHFFFAOYSA-N 0.000 description 1
- ZAKSIRCIOXDVPT-UHFFFAOYSA-N trioctyl(selanylidene)-$l^{5}-phosphane Chemical compound CCCCCCCCP(=[Se])(CCCCCCCC)CCCCCCCC ZAKSIRCIOXDVPT-UHFFFAOYSA-N 0.000 description 1
- PIOZWDBMINZWGJ-UHFFFAOYSA-N trioctyl(sulfanylidene)-$l^{5}-phosphane Chemical compound CCCCCCCCP(=S)(CCCCCCCC)CCCCCCCC PIOZWDBMINZWGJ-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D71/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans or pop bottles; Bales of material
- B65D71/06—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers
- B65D71/12—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank
- B65D71/36—Packaging elements holding or encircling completely or almost completely the bundle of articles, e.g. wrappers the packaging elements, e.g. wrappers being formed by folding a single blank having a tubular shape, e.g. tubular wrappers, with end walls
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D81/00—Containers, packaging elements, or packages, for contents presenting particular transport or storage problems, or adapted to be used for non-packaging purposes after removal of contents
- B65D81/24—Adaptations for preventing deterioration or decay of contents; Applications to the container or packaging material of food preservatives, fungicides, pesticides or animal repellants
- B65D81/26—Adaptations for preventing deterioration or decay of contents; Applications to the container or packaging material of food preservatives, fungicides, pesticides or animal repellants with provision for draining away, or absorbing, or removing by ventilation, fluids, e.g. exuded by contents; Applications of corrosion inhibitors or desiccators
- B65D81/261—Adaptations for preventing deterioration or decay of contents; Applications to the container or packaging material of food preservatives, fungicides, pesticides or animal repellants with provision for draining away, or absorbing, or removing by ventilation, fluids, e.g. exuded by contents; Applications of corrosion inhibitors or desiccators for draining or collecting liquids without absorbing them
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
- B65D2571/00123—Bundling wrappers or trays
- B65D2571/00129—Wrapper locking means
- B65D2571/00135—Wrapper locking means integral with the wrapper
- B65D2571/00141—Wrapper locking means integral with the wrapper glued
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
- B65D2571/00123—Bundling wrappers or trays
- B65D2571/00432—Handles or suspending means
- B65D2571/00438—Holes
- B65D2571/0045—Holes for hands
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
- B65D2571/00123—Bundling wrappers or trays
- B65D2571/00555—Wrapper opening devices
- B65D2571/00561—Lines of weakness
- B65D2571/00574—Lines of weakness whereby contents can still be carried after the line has been torn
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
- B65D2571/00123—Bundling wrappers or trays
- B65D2571/00648—Elements used to form the wrapper
- B65D2571/00654—Blanks
- B65D2571/0066—Blanks formed from one single sheet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D2571/00—Bundles of articles held together by packaging elements for convenience of storage or transport, e.g. portable segregating carrier for plural receptacles such as beer cans, pop bottles; Bales of material
- B65D2571/00123—Bundling wrappers or trays
- B65D2571/00709—Shape of the formed wrapper, i.e. shape of each formed element if the wrapper is made from more than one element
- B65D2571/00722—Shape of the formed wrapper, i.e. shape of each formed element if the wrapper is made from more than one element tubular with end walls, e.g. walls not extending on the whole end surface
- B65D2571/00728—Shape of the formed wrapper, i.e. shape of each formed element if the wrapper is made from more than one element tubular with end walls, e.g. walls not extending on the whole end surface the end walls being closed by gluing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Food Science & Technology (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65309405P | 2005-02-16 | 2005-02-16 | |
| US60/653,094 | 2005-02-16 | ||
| PCT/US2006/005184 WO2006088877A1 (en) | 2005-02-16 | 2006-02-15 | Light emitting device including semiconductor nanocrystals |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077018994A Division KR101257780B1 (ko) | 2005-02-16 | 2006-02-15 | 반도체 나노결정을 포함하는 발광 디바이스 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20130007649A true KR20130007649A (ko) | 2013-01-18 |
Family
ID=36577480
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127029292A Ceased KR20130007649A (ko) | 2005-02-16 | 2006-02-15 | 반도체 나노결정을 포함하는 발광 디바이스 |
| KR1020077018994A Active KR101257780B1 (ko) | 2005-02-16 | 2006-02-15 | 반도체 나노결정을 포함하는 발광 디바이스 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077018994A Active KR101257780B1 (ko) | 2005-02-16 | 2006-02-15 | 반도체 나노결정을 포함하는 발광 디바이스 |
Country Status (9)
| Country | Link |
|---|---|
| US (4) | US8232722B2 (enExample) |
| EP (2) | EP2546192B1 (enExample) |
| JP (2) | JP5528672B2 (enExample) |
| KR (2) | KR20130007649A (enExample) |
| CN (2) | CN107507895B (enExample) |
| MY (1) | MY168191A (enExample) |
| PL (1) | PL2546192T3 (enExample) |
| TW (1) | TWI440206B (enExample) |
| WO (1) | WO2006088877A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190059292A (ko) * | 2016-10-21 | 2019-05-30 | 아후라테크 엘엘씨 | 액체 매질에서 광을 생성하는 시스템 및 방법 |
Families Citing this family (129)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7358159B2 (en) * | 2001-04-04 | 2008-04-15 | Nippon Mining & Metals Co., Ltd. | Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device |
| US8349745B2 (en) * | 2004-03-15 | 2013-01-08 | Sharp Laboratory of America, Inc. | Fabrication of a semiconductor nanoparticle embedded insulating film luminescence device |
| US8007332B2 (en) * | 2004-03-15 | 2011-08-30 | Sharp Laboratories Of America, Inc. | Fabrication of a semiconductor nanoparticle embedded insulating film electroluminescence device |
| US10225906B2 (en) * | 2004-10-22 | 2019-03-05 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
| US20090039764A1 (en) | 2005-03-17 | 2009-02-12 | Cho Kyung Sang | Quantum Dot Light-Emitting Diode Comprising Inorganic Electron Transport Layer |
| US9297092B2 (en) * | 2005-06-05 | 2016-03-29 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
| US8845927B2 (en) * | 2006-06-02 | 2014-09-30 | Qd Vision, Inc. | Functionalized nanoparticles and method |
| US8718437B2 (en) | 2006-03-07 | 2014-05-06 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
| US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
| US7989290B2 (en) | 2005-08-04 | 2011-08-02 | Micron Technology, Inc. | Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps |
| KR101304635B1 (ko) * | 2006-01-09 | 2013-09-05 | 삼성전자주식회사 | 무기물 발광 다이오드 및 그의 제조방법 |
| US20100132770A1 (en) * | 2006-02-09 | 2010-06-03 | Beatty Paul H J | Device including semiconductor nanocrystals and a layer including a doped organic material and methods |
| US8835941B2 (en) * | 2006-02-09 | 2014-09-16 | Qd Vision, Inc. | Displays including semiconductor nanocrystals and methods of making same |
| WO2007095173A2 (en) | 2006-02-14 | 2007-08-23 | Massachusetts Institute Of Technology | White light emitting devices |
| US9951438B2 (en) | 2006-03-07 | 2018-04-24 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
| US8849087B2 (en) | 2006-03-07 | 2014-09-30 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
| WO2007143197A2 (en) | 2006-06-02 | 2007-12-13 | Qd Vision, Inc. | Light-emitting devices and displays with improved performance |
| WO2008070028A2 (en) * | 2006-12-01 | 2008-06-12 | Qd Vision, Inc. | Improved composites and devices including nanoparticles |
| US9874674B2 (en) | 2006-03-07 | 2018-01-23 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
| WO2007112088A2 (en) * | 2006-03-24 | 2007-10-04 | Qd Vision, Inc. | Hyperspectral imaging device |
| WO2007117668A2 (en) * | 2006-04-07 | 2007-10-18 | Qd Vision, Inc. | Methods and articles including nanomaterial |
| WO2007120877A2 (en) * | 2006-04-14 | 2007-10-25 | Qd Vision, Inc. | Transfer surface for manufacturing a light emitting device |
| US8941299B2 (en) * | 2006-05-21 | 2015-01-27 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
| US9212056B2 (en) * | 2006-06-02 | 2015-12-15 | Qd Vision, Inc. | Nanoparticle including multi-functional ligand and method |
| WO2008105792A2 (en) * | 2006-06-24 | 2008-09-04 | Qd Vision, Inc. | Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions |
| WO2008108798A2 (en) * | 2006-06-24 | 2008-09-12 | Qd Vision, Inc. | Methods for depositing nanomaterial, methods for fabricating a device, and methods for fabricating an array of devices |
| WO2008111947A1 (en) | 2006-06-24 | 2008-09-18 | Qd Vision, Inc. | Methods and articles including nanomaterial |
| WO2008033388A2 (en) * | 2006-09-12 | 2008-03-20 | Qd Vision, Inc. | A composite including nanoparticles, methods, and products including a composite |
| WO2008085210A2 (en) * | 2006-09-12 | 2008-07-17 | Qd Vision, Inc. | Electroluminescent display useful for displaying a predetermined pattern |
| WO2008063658A2 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
| WO2008063652A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
| WO2008063653A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Semiconductor nanocrystals and compositions and devices including same |
| WO2008133660A2 (en) | 2006-11-21 | 2008-11-06 | Qd Vision, Inc. | Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts |
| US8222061B2 (en) * | 2007-03-30 | 2012-07-17 | The Penn State Research Foundation | Mist fabrication of quantum dot devices |
| US10096789B2 (en) * | 2007-05-23 | 2018-10-09 | University Of Florida Research Foundation, Inc. | Method and apparatus for light absorption and charged carrier transport |
| WO2009014590A2 (en) | 2007-06-25 | 2009-01-29 | Qd Vision, Inc. | Compositions and methods including depositing nanomaterial |
| US10043993B2 (en) * | 2007-06-25 | 2018-08-07 | Massachusetts Institute Of Technology | Electro-optical device |
| EP2165354B1 (en) * | 2007-06-25 | 2018-05-30 | Massachusetts Institute of Technology | Photovoltaic device including semiconductor nanocrystals |
| WO2009002551A1 (en) * | 2007-06-26 | 2008-12-31 | Qd Vision, Inc. | Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots |
| US9136498B2 (en) * | 2007-06-27 | 2015-09-15 | Qd Vision, Inc. | Apparatus and method for modulating photon output of a quantum dot light emitting device |
| WO2009014707A2 (en) | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
| WO2009057317A1 (ja) * | 2007-11-01 | 2009-05-07 | Panasonic Corporation | 発光素子、及び、表示装置 |
| WO2009072288A1 (ja) * | 2007-12-06 | 2009-06-11 | Panasonic Corporation | 発光素子及びそれを用いた表示装置 |
| WO2009084274A1 (ja) * | 2007-12-28 | 2009-07-09 | Sharp Kabushiki Kaisha | 有機エレクトロルミネッセンス素子 |
| US20110079273A1 (en) * | 2008-01-10 | 2011-04-07 | Massachusetts Institute Of Technology | Photovoltaic devices |
| WO2009099425A2 (en) | 2008-02-07 | 2009-08-13 | Qd Vision, Inc. | Flexible devices including semiconductor nanocrystals, arrays, and methods |
| WO2009103124A1 (en) * | 2008-02-22 | 2009-08-27 | The University Of Melbourne | Semiconductor device including nanocrystals and methods of manufacturing the same |
| GB2458443A (en) * | 2008-02-29 | 2009-09-23 | Univ Dublin City | Electroluminescent device |
| EP2283342B1 (en) * | 2008-04-03 | 2018-07-11 | Samsung Research America, Inc. | Method for preparing a light-emitting device including quantum dots |
| US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
| WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
| EP2297762B1 (en) | 2008-05-06 | 2017-03-15 | Samsung Electronics Co., Ltd. | Solid state lighting devices including quantum confined semiconductor nanoparticles |
| US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
| US8507040B2 (en) | 2008-05-08 | 2013-08-13 | Air Products And Chemicals, Inc. | Binary and ternary metal chalcogenide materials and method of making and using same |
| US8765223B2 (en) * | 2008-05-08 | 2014-07-01 | Air Products And Chemicals, Inc. | Binary and ternary metal chalcogenide materials and method of making and using same |
| US8030843B2 (en) * | 2008-07-14 | 2011-10-04 | Wisys Technology Foundation | Quantum dot phosphors for solid-state lighting devices |
| JP2010103500A (ja) * | 2008-09-26 | 2010-05-06 | Toppan Printing Co Ltd | 有機電界発光素子及びその製造方法、画像表示装置、照明装置 |
| KR101652789B1 (ko) * | 2009-02-23 | 2016-09-01 | 삼성전자주식회사 | 다중 양자점층을 가지는 양자점 발광소자 |
| KR101753740B1 (ko) | 2009-04-28 | 2017-07-04 | 삼성전자주식회사 | 광학 재료, 광학 부품 및 방법 |
| EP2465147B1 (en) | 2009-08-14 | 2019-02-27 | Samsung Electronics Co., Ltd. | Lighting devices, an optical component for a lighting device, and methods |
| KR101728575B1 (ko) | 2009-10-07 | 2017-04-19 | 큐디 비젼, 인크. | 양자점을 포함하는 소자 |
| US8120134B2 (en) | 2009-10-15 | 2012-02-21 | Micron Technology, Inc. | High-performance diode device structure and materials used for the same |
| WO2011060180A1 (en) | 2009-11-11 | 2011-05-19 | Qd Vision, Inc. | Device including quantum dots |
| US9011818B2 (en) * | 2009-11-30 | 2015-04-21 | Massachusetts Institute Of Technology | Materials and methods for biological imaging |
| GB201012483D0 (en) * | 2010-07-26 | 2010-09-08 | Seren Photonics Ltd | Light emitting diodes |
| WO2012033493A1 (en) * | 2010-09-09 | 2012-03-15 | Electricite De France | An optoelectronic device comprising nanostructures of hexagonal type crystals |
| WO2012071107A1 (en) * | 2010-11-23 | 2012-05-31 | Qd Vision, Inc. | Device including semiconductor nanocrystals & method |
| WO2012134629A1 (en) | 2011-04-01 | 2012-10-04 | Qd Vision, Inc. | Quantum dots, method, and devices |
| WO2012138410A1 (en) * | 2011-04-02 | 2012-10-11 | Qd Vision, Inc. | Device including quantum dots |
| WO2013019299A2 (en) | 2011-05-11 | 2013-02-07 | Qd Vision, Inc. | Method for processing devices including quantum dots and devices |
| WO2012158252A1 (en) | 2011-05-16 | 2012-11-22 | Qd Vision, Inc. | Device including quantum dots and method for making same |
| WO2012158832A2 (en) | 2011-05-16 | 2012-11-22 | Qd Vision, Inc. | Method for preparing semiconductor nanocrystals |
| WO2013028253A1 (en) | 2011-08-19 | 2013-02-28 | Qd Vision, Inc. | Semiconductor nanocrystals and methods |
| US9330911B2 (en) * | 2011-08-22 | 2016-05-03 | Invenlux Limited | Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride |
| US9202993B2 (en) | 2011-09-21 | 2015-12-01 | Ev Group E. Thallner Gmbh | Method for producing a polychromatizing layer and substrate and also light-emitting diode having a polychromatizing layer |
| WO2013085611A1 (en) | 2011-12-08 | 2013-06-13 | Qd Vision, Inc. | Solution-processed sol-gel films, devices including same, and methods |
| KR20130070892A (ko) * | 2011-12-20 | 2013-06-28 | 한국전자통신연구원 | 광 검출기 소자 |
| WO2013103440A1 (en) | 2012-01-06 | 2013-07-11 | Qd Vision, Inc. | Light emitting device including blue emitting quantum dots and method |
| CN103311442A (zh) * | 2012-03-06 | 2013-09-18 | 海洋王照明科技股份有限公司 | 电致发光器件及其制备方法 |
| CN102610725B (zh) * | 2012-03-29 | 2015-01-07 | 华北电力大学 | 一种半导体量子点发光二极管及其制备方法 |
| US9929325B2 (en) | 2012-06-05 | 2018-03-27 | Samsung Electronics Co., Ltd. | Lighting device including quantum dots |
| CN102820391B (zh) * | 2012-08-27 | 2014-12-03 | 中国科学院半导体研究所 | 硅基上的近红外量子点电致发光的器件及制备方法 |
| US9515283B2 (en) * | 2012-08-29 | 2016-12-06 | Boe Technology Group Co., Ltd. | OLED devices with internal outcoupling |
| KR20140032811A (ko) * | 2012-09-07 | 2014-03-17 | 삼성전자주식회사 | 백라이트 유닛 및 이를 구비한 액정 디스플레이 장치 |
| WO2014088667A2 (en) * | 2012-09-14 | 2014-06-12 | Qd Vision, Inc. | Light emitting device including tandem structure |
| WO2014085469A1 (en) * | 2012-11-27 | 2014-06-05 | Massachusetts Institute Of Technology | Deposition of semiconductor nanocrystals for light emitting devices |
| WO2014093322A1 (en) * | 2012-12-10 | 2014-06-19 | Massachusetts Institute Of Technology | Near-infrared light emitting device using semiconductor nanocrystals |
| US8941111B2 (en) | 2012-12-21 | 2015-01-27 | Invensas Corporation | Non-crystalline inorganic light emitting diode |
| CN103117361A (zh) * | 2013-02-28 | 2013-05-22 | 中国科学院合肥物质科学研究院 | 基于氧化镍阳极界面层的有机半导体薄膜太阳能电池的制备方法 |
| KR102100370B1 (ko) * | 2013-04-26 | 2020-04-14 | 삼성디스플레이 주식회사 | 나노 결정 형성 방법 및 나노 결정의 형성된 박막을 포함한 유기 발광 표시 장치의 제조 방법 |
| US9574135B2 (en) * | 2013-08-22 | 2017-02-21 | Nanoco Technologies Ltd. | Gas phase enhancement of emission color quality in solid state LEDs |
| CN105493295B (zh) * | 2013-08-29 | 2019-03-29 | 佛罗里达大学研究基金会有限公司 | 来自溶液处理的无机半导体的空气稳定红外光探测器 |
| KR102128276B1 (ko) * | 2014-02-17 | 2020-06-30 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 인듐과 아연과 주석 및 산소로 이루어진 산화물의 에칭용 액체 조성물 및 에칭방법 |
| CN105206757B (zh) * | 2015-11-05 | 2016-09-07 | 京东方科技集团股份有限公司 | 有机发光二极管及其制作方法、显示基板和显示装置 |
| KR102447310B1 (ko) * | 2015-12-28 | 2022-09-26 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치 |
| KR101717623B1 (ko) * | 2016-03-17 | 2017-03-17 | 연세대학교 산학협력단 | 초박막 다성분계 이종접합 소재를 이용한 초고속 led 소자 |
| JP2017182892A (ja) | 2016-03-28 | 2017-10-05 | セイコーエプソン株式会社 | 発光素子、発光装置、及び電子機器 |
| US9956055B2 (en) * | 2016-05-17 | 2018-05-01 | Eli Halpert | Marking device with metallic element for use in X-ray guided surgery |
| JP2018014396A (ja) * | 2016-07-20 | 2018-01-25 | ソニーセミコンダクタソリューションズ株式会社 | 光電変換素子および固体撮像装置 |
| ES2950281T3 (es) * | 2016-09-20 | 2023-10-06 | Inuru Gmbh | Capa barrera electroactiva limitadora de difusión para un componente optoelectrónico |
| CN106450013B (zh) * | 2016-10-11 | 2019-11-26 | Tcl集团股份有限公司 | Qled器件 |
| US10532927B2 (en) * | 2017-01-09 | 2020-01-14 | Alliance For Sustainable Energy, Llc | Graded catalytic-protective layer for an efficient and stable water-splitting photocathode |
| US10593902B2 (en) | 2017-09-29 | 2020-03-17 | University Of Central Florida Research Foundation, Inc. | Quantum dot light emitting devices (QLEDs) and method of manufacture |
| KR20200072486A (ko) * | 2017-10-19 | 2020-06-22 | 엔에스 마테리얼스 아이엔씨. | 발광 소자, 및 조명 장치 |
| US11289667B2 (en) | 2018-02-13 | 2022-03-29 | Sharp Kabushiki Kaisha | Light-emitting device with high electron injection efficiency |
| US11417851B2 (en) | 2018-02-13 | 2022-08-16 | Sharp Kabushiki Kaisha | Light-emitting element, light-emitting device, and device for producing light-emitting element |
| WO2019187064A1 (ja) | 2018-03-30 | 2019-10-03 | シャープ株式会社 | 発光素子、発光デバイス、発光素子の製造装置 |
| US11121339B2 (en) * | 2018-05-11 | 2021-09-14 | Nanosys, Inc. | Quantum dot LED design based on resonant energy transfer |
| US10851298B2 (en) | 2018-08-30 | 2020-12-01 | Samsung Electronics Co., Ltd. | Electronic device including quantum dots |
| US11943947B2 (en) | 2018-09-28 | 2024-03-26 | Sharp Kabushiki Kaisha | Light-emitting device and method of manufacturing light-emitting device |
| CN110970534A (zh) * | 2018-09-29 | 2020-04-07 | Tcl集团股份有限公司 | 一种氧化镍薄膜及其制备方法、量子点发光二极管 |
| US12040429B2 (en) * | 2018-12-10 | 2024-07-16 | Sharp Kabushiki Kaisha | Light-emitting element and light-emitting device |
| US11996501B2 (en) * | 2019-02-20 | 2024-05-28 | Sharp Kabushiki Kaisha | Method for manufacturing light-emitting device |
| WO2020208810A1 (ja) * | 2019-04-12 | 2020-10-15 | シャープ株式会社 | 発光素子、表示装置および発光素子の製造方法 |
| CN110102457A (zh) * | 2019-04-19 | 2019-08-09 | 东北大学秦皇岛分校 | 一种在低温下制备氧化镍纳米晶电致变色薄膜的方法 |
| US12193250B2 (en) | 2019-05-31 | 2025-01-07 | Sharp Kabushiki Kaisha | Light emitting element and display device including an electron transport layer containing at least one of RH and IR |
| WO2020261347A1 (ja) | 2019-06-24 | 2020-12-30 | シャープ株式会社 | 発光素子 |
| US12133401B2 (en) | 2019-08-20 | 2024-10-29 | Sharp Kabushiki Kaisha | Light-emitting element and light-emitting device including a light-emitting layer containing quantum dots |
| US12289944B2 (en) | 2019-09-02 | 2025-04-29 | Sharp Kabushiki Kaisha | Light-emitting element and display device |
| US12284860B2 (en) | 2019-09-19 | 2025-04-22 | Sharp Kabushiki Kaisha | Light-emitting element having a p-type hole transport layer with n-type nanoparticles dispersed therein and a display device thereof |
| US12289936B2 (en) | 2019-09-30 | 2025-04-29 | Sharp Kabushiki Kaisha | Light-emitting element, light-emitting device |
| US12433067B2 (en) | 2020-01-15 | 2025-09-30 | Sharp Kabushiki Kaisha | Light-emitting element and light-emitting device |
| CN113611805B (zh) * | 2020-08-14 | 2022-12-27 | 广东聚华印刷显示技术有限公司 | 发光器件及其制备方法和发光装置 |
| JP7162647B2 (ja) * | 2020-09-15 | 2022-10-28 | Jx金属株式会社 | Cu-W-Oスパッタリングターゲット及び酸化物薄膜 |
| KR20220050282A (ko) | 2020-10-15 | 2022-04-25 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
| CN112103397A (zh) * | 2020-10-16 | 2020-12-18 | 京东方科技集团股份有限公司 | 量子点发光二极管及其制备方法、显示面板和显示装置 |
| CN113140681B (zh) * | 2021-03-03 | 2022-03-18 | 重庆文理学院 | 一种含氧化铁界面层的有机光伏器件及其制备方法 |
| CN113809253A (zh) * | 2021-09-06 | 2021-12-17 | 深圳市华星光电半导体显示技术有限公司 | 有机电致发光器件及其制备方法 |
| WO2024201993A1 (ja) * | 2023-03-31 | 2024-10-03 | シャープディスプレイテクノロジー株式会社 | 発光素子、表示装置、および発光素子の製造方法 |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3216305A (en) | 1964-04-23 | 1965-11-09 | Kaplan Stanley | Hammerable anchor bolt with deformable serrated apertures |
| JP2895868B2 (ja) * | 1989-08-21 | 1999-05-24 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
| US5262357A (en) * | 1991-11-22 | 1993-11-16 | The Regents Of The University Of California | Low temperature thin films formed from nanocrystal precursors |
| US5512131A (en) | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
| US6180239B1 (en) | 1993-10-04 | 2001-01-30 | President And Fellows Of Harvard College | Microcontact printing on surfaces and derivative articles |
| US5537000A (en) * | 1994-04-29 | 1996-07-16 | The Regents, University Of California | Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices |
| AU6774996A (en) | 1995-08-18 | 1997-03-12 | President And Fellows Of Harvard College | Self-assembled monolayer directed patterning of surfaces |
| US5919587A (en) * | 1996-05-22 | 1999-07-06 | Moltech Corporation | Composite cathodes, electrochemical cells comprising novel composite cathodes, and processes for fabricating same |
| JP4071360B2 (ja) * | 1997-08-29 | 2008-04-02 | 株式会社東芝 | 半導体装置 |
| US6459331B1 (en) * | 1997-09-02 | 2002-10-01 | Kabushiki Kaisha Toshiba | Noise suppression circuit, ASIC, navigation apparatus communication circuit, and communication apparatus having the same |
| US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
| US6251303B1 (en) | 1998-09-18 | 2001-06-26 | Massachusetts Institute Of Technology | Water-soluble fluorescent nanocrystals |
| JP2001043973A (ja) * | 1999-07-29 | 2001-02-16 | Matsushita Electric Ind Co Ltd | 有機発光素子及びその製造方法 |
| JP2000268971A (ja) * | 1999-03-16 | 2000-09-29 | Tdk Corp | 有機el素子 |
| JP2000340366A (ja) * | 1999-05-27 | 2000-12-08 | Tdk Corp | 発光ダイオード |
| US6797412B1 (en) | 2000-04-11 | 2004-09-28 | University Of Connecticut | Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films |
| US20010052752A1 (en) * | 2000-04-25 | 2001-12-20 | Ghosh Amalkumar P. | Thin film encapsulation of organic light emitting diode devices |
| US20020121638A1 (en) * | 2000-06-30 | 2002-09-05 | Vladimir Grushin | Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds |
| EP1307919A4 (en) * | 2000-07-12 | 2009-04-15 | California Inst Of Techn | ELECTRICAL PASSIVATION OF SILIC-SIZED SURFACES USING ORGANIC LAYERS |
| US6576291B2 (en) | 2000-12-08 | 2003-06-10 | Massachusetts Institute Of Technology | Preparation of nanocrystallites |
| US6518117B2 (en) * | 2001-03-29 | 2003-02-11 | Micron Technology, Inc. | Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions |
| EP1388180A2 (en) * | 2001-05-18 | 2004-02-11 | Cambridge University Technical Services Limited | Electroluminescent device |
| US6773949B2 (en) * | 2001-07-31 | 2004-08-10 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods |
| JP2005502176A (ja) * | 2001-09-04 | 2005-01-20 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 量子ドットを有するエレクトロルミネセント装置 |
| US6632694B2 (en) * | 2001-10-17 | 2003-10-14 | Astralux, Inc. | Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters |
| KR20050040835A (ko) * | 2001-10-31 | 2005-05-03 | 이데미쓰 고산 가부시키가이샤 | 가용성 화합물 및 유기 전기발광 소자 |
| JP2003217861A (ja) | 2002-01-22 | 2003-07-31 | Matsushita Electric Ind Co Ltd | 電界発光素子 |
| EP2902464B1 (en) * | 2002-03-29 | 2019-09-18 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
| US7332211B1 (en) | 2002-11-07 | 2008-02-19 | Massachusetts Institute Of Technology | Layered materials including nanoparticles |
| TWI265750B (en) * | 2003-02-27 | 2006-11-01 | Toyota Jidoshokki Kk | Organic electro-luminescence devices |
| JP2004296950A (ja) | 2003-03-27 | 2004-10-21 | Quantum 14:Kk | 発光素子と発光装置並びに情報ディスプレイ装置 |
| JP2004303592A (ja) | 2003-03-31 | 2004-10-28 | Mitsubishi Chemicals Corp | 電界発光素子及び電界発光素子の製造方法 |
| JP2005038634A (ja) | 2003-07-16 | 2005-02-10 | Matsushita Electric Ind Co Ltd | 電流注入型発光素子 |
| US7605534B2 (en) * | 2003-12-02 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element having metal oxide and light-emitting device using the same |
| KR100625999B1 (ko) * | 2004-02-26 | 2006-09-20 | 삼성에스디아이 주식회사 | 도너 시트, 상기 도너 시트의 제조방법, 상기 도너 시트를이용한 박막 트랜지스터의 제조방법, 및 상기 도너 시트를이용한 평판 표시장치의 제조방법 |
| US7253452B2 (en) | 2004-03-08 | 2007-08-07 | Massachusetts Institute Of Technology | Blue light emitting semiconductor nanocrystal materials |
| US20050230673A1 (en) * | 2004-03-25 | 2005-10-20 | Mueller Alexander H | Colloidal quantum dot light emitting diodes |
| KR100632632B1 (ko) * | 2004-05-28 | 2006-10-12 | 삼성전자주식회사 | 나노 결정의 다층 박막 제조 방법 및 이를 이용한유·무기 하이브리드 전기 발광 소자 |
| US10225906B2 (en) | 2004-10-22 | 2019-03-05 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
| US8134175B2 (en) | 2005-01-11 | 2012-03-13 | Massachusetts Institute Of Technology | Nanocrystals including III-V semiconductors |
| US20090039764A1 (en) | 2005-03-17 | 2009-02-12 | Cho Kyung Sang | Quantum Dot Light-Emitting Diode Comprising Inorganic Electron Transport Layer |
| US20070001581A1 (en) | 2005-06-29 | 2007-01-04 | Stasiak James W | Nanostructure based light emitting devices and associated methods |
| US7615800B2 (en) | 2005-09-14 | 2009-11-10 | Eastman Kodak Company | Quantum dot light emitting layer |
| KR101304635B1 (ko) | 2006-01-09 | 2013-09-05 | 삼성전자주식회사 | 무기물 발광 다이오드 및 그의 제조방법 |
| KR100789559B1 (ko) | 2006-12-20 | 2007-12-28 | 삼성전자주식회사 | 절연층을 포함하는 무기 전계발광 소자, 그의 제조방법 및이를 포함하는 전자소자 |
-
2006
- 2006-02-15 US US11/354,185 patent/US8232722B2/en active Active
- 2006-02-15 JP JP2007555341A patent/JP5528672B2/ja active Active
- 2006-02-15 EP EP12187692.4A patent/EP2546192B1/en active Active
- 2006-02-15 KR KR1020127029292A patent/KR20130007649A/ko not_active Ceased
- 2006-02-15 EP EP06735037.1A patent/EP1864341B1/en active Active
- 2006-02-15 PL PL12187692T patent/PL2546192T3/pl unknown
- 2006-02-15 WO PCT/US2006/005184 patent/WO2006088877A1/en not_active Ceased
- 2006-02-15 TW TW095105073A patent/TWI440206B/zh active
- 2006-02-15 MY MYPI20060650A patent/MY168191A/en unknown
- 2006-02-15 CN CN201710772330.6A patent/CN107507895B/zh active Active
- 2006-02-15 CN CNA2006800125477A patent/CN101213681A/zh active Pending
- 2006-02-15 KR KR1020077018994A patent/KR101257780B1/ko active Active
-
2011
- 2011-09-20 JP JP2011204274A patent/JP5806895B2/ja active Active
-
2012
- 2012-06-01 US US13/486,467 patent/US20120238047A1/en not_active Abandoned
- 2012-06-01 US US13/486,478 patent/US9550614B2/en active Active
-
2017
- 2017-01-18 US US15/409,388 patent/US10014438B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190059292A (ko) * | 2016-10-21 | 2019-05-30 | 아후라테크 엘엘씨 | 액체 매질에서 광을 생성하는 시스템 및 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20070103068A1 (en) | 2007-05-10 |
| MY168191A (en) | 2018-10-15 |
| CN101213681A (zh) | 2008-07-02 |
| JP5806895B2 (ja) | 2015-11-10 |
| US10014438B2 (en) | 2018-07-03 |
| US20170125635A1 (en) | 2017-05-04 |
| EP2546192B1 (en) | 2019-12-18 |
| US20120292595A1 (en) | 2012-11-22 |
| CN107507895B (zh) | 2020-12-01 |
| WO2006088877A1 (en) | 2006-08-24 |
| US20120238047A1 (en) | 2012-09-20 |
| US8232722B2 (en) | 2012-07-31 |
| EP2546192A3 (en) | 2014-08-27 |
| EP1864341B1 (en) | 2019-11-13 |
| JP5528672B2 (ja) | 2014-06-25 |
| JP2008530802A (ja) | 2008-08-07 |
| EP2546192A2 (en) | 2013-01-16 |
| US9550614B2 (en) | 2017-01-24 |
| PL2546192T3 (pl) | 2020-05-18 |
| CN107507895A (zh) | 2017-12-22 |
| KR20070107708A (ko) | 2007-11-07 |
| JP2012023388A (ja) | 2012-02-02 |
| TWI440206B (zh) | 2014-06-01 |
| TW200727514A (en) | 2007-07-16 |
| KR101257780B1 (ko) | 2013-04-24 |
| EP1864341A1 (en) | 2007-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101257780B1 (ko) | 반도체 나노결정을 포함하는 발광 디바이스 | |
| US9224895B2 (en) | Photovoltaic device including semiconductor nanocrystals | |
| EP1989725B1 (en) | White light emitting devices | |
| KR101369205B1 (ko) | 반도체 나노결정을 포함하는 발광 디바이스 | |
| US9505978B2 (en) | Blue light emitting semiconductor nanocrystals and devices | |
| US20110079273A1 (en) | Photovoltaic devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A107 | Divisional application of patent | ||
| PA0104 | Divisional application for international application |
Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20121108 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20121207 Comment text: Request for Examination of Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20130529 Patent event code: PE09021S01D |
|
| E90F | Notification of reason for final refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Final Notice of Reason for Refusal Patent event date: 20140326 Patent event code: PE09021S02D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20141226 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20140326 Comment text: Final Notice of Reason for Refusal Patent event code: PE06011S02I Patent event date: 20130529 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
|
| J201 | Request for trial against refusal decision | ||
| PJ0201 | Trial against decision of rejection |
Patent event date: 20150327 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20141226 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Appeal identifier: 2015101001717 Request date: 20150327 |
|
| B901 | Examination by re-examination before a trial | ||
| PB0901 | Examination by re-examination before a trial | ||
| E801 | Decision on dismissal of amendment | ||
| PE0801 | Dismissal of amendment |
Patent event code: PE08012E01D Comment text: Decision on Dismissal of Amendment Patent event date: 20150526 Patent event code: PE08011R01I Comment text: Amendment to Specification, etc. Patent event date: 20150327 Patent event code: PE08011R01I Comment text: Amendment to Specification, etc. Patent event date: 20140814 Patent event code: PE08011R01I Comment text: Amendment to Specification, etc. Patent event date: 20131115 Patent event code: PE08011R01I Comment text: Amendment to Specification, etc. Patent event date: 20130315 |
|
| B601 | Maintenance of original decision after re-examination before a trial | ||
| PB0601 | Maintenance of original decision after re-examination before a trial | ||
| J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20150327 Effective date: 20160412 |
|
| PJ1301 | Trial decision |
Patent event code: PJ13011S01D Patent event date: 20160412 Comment text: Trial Decision on Objection to Decision on Refusal Appeal kind category: Appeal against decision to decline refusal Request date: 20150327 Decision date: 20160412 Appeal identifier: 2015101001717 |