KR20120040756A - 실리콘 웨이퍼에서 금속성 오염을 줄이기 위한 방법 - Google Patents

실리콘 웨이퍼에서 금속성 오염을 줄이기 위한 방법 Download PDF

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Publication number
KR20120040756A
KR20120040756A KR1020127009189A KR20127009189A KR20120040756A KR 20120040756 A KR20120040756 A KR 20120040756A KR 1020127009189 A KR1020127009189 A KR 1020127009189A KR 20127009189 A KR20127009189 A KR 20127009189A KR 20120040756 A KR20120040756 A KR 20120040756A
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South Korea
Prior art keywords
silicon wafer
wafers
silicon
wafer
copper
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Ceased
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KR1020127009189A
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English (en)
Korean (ko)
Inventor
래리 더블유. 시브
브라이언 엘. 길모어
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엠이엠씨 일렉트로닉 머티리얼즈, 인크.
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Publication of KR20120040756A publication Critical patent/KR20120040756A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020127009189A 2004-05-07 2005-04-26 실리콘 웨이퍼에서 금속성 오염을 줄이기 위한 방법 Ceased KR20120040756A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/840,854 2004-05-07
US10/840,854 US7084048B2 (en) 2004-05-07 2004-05-07 Process for metallic contamination reduction in silicon wafers

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020067025661A Division KR101165108B1 (ko) 2004-05-07 2005-04-26 실리콘 웨이퍼에서 금속성 오염을 줄이기 위한 방법

Publications (1)

Publication Number Publication Date
KR20120040756A true KR20120040756A (ko) 2012-04-27

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ID=34967282

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KR1020127009189A Ceased KR20120040756A (ko) 2004-05-07 2005-04-26 실리콘 웨이퍼에서 금속성 오염을 줄이기 위한 방법

Country Status (7)

Country Link
US (1) US7084048B2 (https=)
EP (2) EP1743364B1 (https=)
JP (2) JP5238251B2 (https=)
KR (1) KR20120040756A (https=)
CN (1) CN100466200C (https=)
TW (1) TWI393168B (https=)
WO (1) WO2005114716A2 (https=)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3502447B2 (ja) 1994-08-12 2004-03-02 東亜グラウト工業株式会社 既設管渠の更生工法及び更生管渠
JP3502448B2 (ja) 1994-08-17 2004-03-02 東亜グラウト工業株式会社 既設管渠の更生工法及び更生管渠
JP2005333090A (ja) * 2004-05-21 2005-12-02 Sumco Corp Ｐ型シリコンウェーハおよびその熱処理方法
JP2006040972A (ja) * 2004-07-22 2006-02-09 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハおよびその製造方法
JP2007194232A (ja) * 2006-01-17 2007-08-02 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの製造方法
US20070295357A1 (en) * 2006-06-27 2007-12-27 Lovejoy Michael L Removing metal using an oxidizing chemistry
US7968148B2 (en) * 2006-09-15 2011-06-28 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with clean surfaces
JP5350623B2 (ja) * 2006-12-28 2013-11-27 グローバルウェーハズ・ジャパン株式会社 シリコンウエハの熱処理方法
US20080171449A1 (en) * 2007-01-15 2008-07-17 Chao-Ching Hsieh Method for cleaning salicide
US7888142B2 (en) * 2007-09-28 2011-02-15 International Business Machines Corporation Copper contamination detection method and system for monitoring copper contamination
US7957917B2 (en) * 2007-09-28 2011-06-07 International Business Machines Corporation Copper contamination detection method and system for monitoring copper contamination
US20090211623A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US8076175B2 (en) * 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
JP5276863B2 (ja) * 2008-03-21 2013-08-28 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハ
JP2009231429A (ja) * 2008-03-21 2009-10-08 Covalent Materials Corp シリコンウェーハの製造方法
JP5134586B2 (ja) * 2009-05-18 2013-01-30 濱田重工株式会社 シリコンウエーハの再生方法
JP5544859B2 (ja) * 2009-12-15 2014-07-09 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
US20110146717A1 (en) * 2009-12-23 2011-06-23 Memc Electronic Materials, Inc. Systems And Methods For Analysis of Water and Substrates Rinsed in Water
CN103493214B (zh) * 2011-01-26 2016-01-20 胜高股份有限公司 太阳能电池用晶片及其制备方法
WO2012102755A1 (en) * 2011-01-28 2012-08-02 Applied Materials, Inc. Carbon addition for low resistivity in situ doped silicon epitaxy
US8796116B2 (en) * 2011-01-31 2014-08-05 Sunedison Semiconductor Limited Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
GB201105953D0 (en) * 2011-04-07 2011-05-18 Metryx Ltd Measurement apparatus and method
DE102011016366B4 (de) * 2011-04-07 2018-09-06 Nasp Iii/V Gmbh III/V-Si-Template, dessen Verwendung und Verfahren zu dessen Herstellung
JP6113152B2 (ja) * 2011-06-03 2017-04-12 エムイーエムシー・シンガポール・プライベイト・リミテッドＭｅｍｃ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ． Ｌｔｄ． シリコンウェハにおいて少数キャリア寿命劣化を抑制する方法
JP6065366B2 (ja) * 2012-01-30 2017-01-25 富士通セミコンダクター株式会社 半導体装置の製造方法
CN102766908B (zh) * 2012-07-25 2016-02-24 苏州阿特斯阳光电力科技有限公司 晶体硅太阳能电池的硼扩散方法
CN104733337B (zh) * 2013-12-23 2017-11-07 有研半导体材料有限公司 一种用于分析硅片体内金属沾污的测试方法
CN103871871A (zh) * 2014-02-21 2014-06-18 上海华力微电子有限公司 一种去除硅片金属杂质的方法
CN105869988B (zh) * 2015-01-20 2019-09-24 无锡华润上华科技有限公司 一种半导体器件的制造方法
CN109872941A (zh) * 2017-12-05 2019-06-11 上海新昇半导体科技有限公司 一种硅片的处理方法
KR102790291B1 (ko) * 2018-03-22 2025-04-04 스미토모 오사카 세멘토 가부시키가이샤 복합 소결체, 정전 척 부재, 정전 척 장치 및 복합 소결체의 제조 방법
DE102020107236B4 (de) * 2019-09-30 2023-05-04 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zum herstellen eines halbleiter-auf-isolator(soi)-substrats
CN112539982B (zh) * 2020-12-03 2023-11-03 西安奕斯伟材料科技股份有限公司 一种硅片样片的制作方法和硅片样片
CN112683988B (zh) 2020-12-28 2023-06-02 上海新昇半导体科技有限公司 一种晶圆中金属杂质的检测方法
CN113506733A (zh) * 2021-06-22 2021-10-15 华虹半导体(无锡)有限公司 降低硅片金属杂质的方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055629B2 (ja) 1983-03-15 1985-12-05 グンゼ株式会社 筒状衣料物品の裏返し装置
JPS6055629A (ja) 1983-09-07 1985-03-30 Fujitsu Ltd ミラ−ウェハの製造方法
JPS63129633A (ja) 1986-11-20 1988-06-02 Fujitsu Ltd 半導体表面処理方法
JPH01244621A (ja) * 1988-03-25 1989-09-29 Shin Etsu Handotai Co Ltd シリコン単結晶基板の表面清浄化方法
DE68925879T2 (de) * 1988-12-21 1996-10-02 At & T Corp Thermisches Oxydierungsverfahren mit verändertem Wachstum für dünne Oxide
DE3939661A1 (de) 1989-11-30 1991-06-13 Wacker Chemitronic Verfahren zur steuerung des einbaues von kupfer in siliciumscheiben beim chemomechanischen polieren
JPH05275436A (ja) * 1992-03-24 1993-10-22 Shin Etsu Handotai Co Ltd シリコンウエーハの熱処理方法
JP3095519B2 (ja) * 1992-04-22 2000-10-03 株式会社東芝 半導体装置の製造方法
US5869405A (en) * 1996-01-03 1999-02-09 Micron Technology, Inc. In situ rapid thermal etch and rapid thermal oxidation
US6482269B1 (en) * 1997-05-29 2002-11-19 Memc Electronic Materials, Inc. Process for the removal of copper and other metallic impurities from silicon
US6100167A (en) * 1997-05-29 2000-08-08 Memc Electronic Materials, Inc. Process for the removal of copper from polished boron doped silicon wafers
JP3211747B2 (ja) * 1997-09-30 2001-09-25 日本電気株式会社 半導体装置の製造方法
DE69906475T2 (de) * 1998-01-09 2004-03-18 Asm America Inc., Phoenix In situ wachstum von oxid und silizium schichten
JP3173655B2 (ja) * 1999-01-18 2001-06-04 日本電気株式会社 半導体装置の製造方法
JP2000294549A (ja) * 1999-02-02 2000-10-20 Nec Corp 半導体装置及びその製造方法
JP3601383B2 (ja) * 1999-11-25 2004-12-15 信越半導体株式会社 エピタキシャル成長用シリコンウエーハ及びエピタキシャルウエーハ並びにその製造方法
US6599815B1 (en) * 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
US20030104680A1 (en) * 2001-11-13 2003-06-05 Memc Electronic Materials, Inc. Process for the removal of copper from polished boron-doped silicon wafers

Also Published As

Publication number Publication date
JP2007536738A (ja) 2007-12-13
EP1743364B1 (en) 2011-12-28
EP1743364A2 (en) 2007-01-17
JP5238251B2 (ja) 2013-07-17
EP2259291B1 (en) 2012-03-14
JP2013058784A (ja) 2013-03-28
CN100466200C (zh) 2009-03-04
EP2259291A3 (en) 2011-02-23
US7084048B2 (en) 2006-08-01
WO2005114716A2 (en) 2005-12-01
CN1981369A (zh) 2007-06-13
EP2259291A2 (en) 2010-12-08
US20050250297A1 (en) 2005-11-10
WO2005114716A3 (en) 2006-02-09
TW200603224A (en) 2006-01-16
TWI393168B (zh) 2013-04-11

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