CN104733337B - 一种用于分析硅片体内金属沾污的测试方法 - Google Patents
一种用于分析硅片体内金属沾污的测试方法 Download PDFInfo
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- CN104733337B CN104733337B CN201310718358.3A CN201310718358A CN104733337B CN 104733337 B CN104733337 B CN 104733337B CN 201310718358 A CN201310718358 A CN 201310718358A CN 104733337 B CN104733337 B CN 104733337B
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Na | Mg | Al | K | Ca | Cr | Fe | Ni | Cu | Zn | |
样品1 | 3.5E+08 | 1.0E+09 | 1.0E+09 | 1.0E+08 | 4.0E+07 | 9.2E+07 | 3.8E+08 | 4.5E+09 | 8.9E+08 | 1.6E+09 |
样品2 | 3.7E+08 | 2.6E+09 | 1.2E+09 | 1.7E+08 | 1.7E+09 | 7.8E+07 | 3.4E+08 | 1.7E+09 | 1.9E+09 | 1.6E+09 |
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CN104733337B true CN104733337B (zh) | 2017-11-07 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106932322A (zh) * | 2015-12-31 | 2017-07-07 | 立邦涂料(中国)有限公司 | 一种内墙测试耐沾污性能的方法与装置 |
CN106990127A (zh) * | 2017-04-01 | 2017-07-28 | 沈阳大学 | 一种标定高温氧化反应中钢基体原始界面的方法 |
CN109935528A (zh) * | 2017-12-15 | 2019-06-25 | 有研半导体材料有限公司 | 一种硅片表面处理方法 |
CN112485090A (zh) * | 2020-12-03 | 2021-03-12 | 西安奕斯伟硅片技术有限公司 | 一种硅片含铜量的测试方法 |
CN112713103B (zh) * | 2021-03-29 | 2021-06-25 | 西安奕斯伟硅片技术有限公司 | 硅片中金属含量的测量方法 |
CN117191932A (zh) * | 2023-11-06 | 2023-12-08 | 山东有研艾斯半导体材料有限公司 | 一种硅片表面金属回收率的测试方法及系统 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US6174740B1 (en) * | 1995-09-18 | 2001-01-16 | Shin-Etsu Handotai, Co., Ltd. | Method for analyzing impurities within silicon wafer |
CN1941290A (zh) * | 2005-09-29 | 2007-04-04 | 硅电子股份公司 | 未抛光半导体晶片和用于制造未抛光半导体晶片的方法 |
CN1981369A (zh) * | 2004-05-07 | 2007-06-13 | Memc电子材料有限公司 | 减少硅晶片中的金属杂质的方法 |
CN1988948A (zh) * | 2004-07-20 | 2007-06-27 | 安格斯公司 | 从超高纯度气体中除去金属污染物 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US6174740B1 (en) * | 1995-09-18 | 2001-01-16 | Shin-Etsu Handotai, Co., Ltd. | Method for analyzing impurities within silicon wafer |
CN1981369A (zh) * | 2004-05-07 | 2007-06-13 | Memc电子材料有限公司 | 减少硅晶片中的金属杂质的方法 |
CN1988948A (zh) * | 2004-07-20 | 2007-06-27 | 安格斯公司 | 从超高纯度气体中除去金属污染物 |
CN1941290A (zh) * | 2005-09-29 | 2007-04-04 | 硅电子股份公司 | 未抛光半导体晶片和用于制造未抛光半导体晶片的方法 |
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