KR20120032024A - 감방사선성 수지 조성물 - Google Patents

감방사선성 수지 조성물 Download PDF

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Publication number
KR20120032024A
KR20120032024A KR1020127003205A KR20127003205A KR20120032024A KR 20120032024 A KR20120032024 A KR 20120032024A KR 1020127003205 A KR1020127003205 A KR 1020127003205A KR 20127003205 A KR20127003205 A KR 20127003205A KR 20120032024 A KR20120032024 A KR 20120032024A
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KR
South Korea
Prior art keywords
group
formula
carbon atoms
pattern
resin composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127003205A
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English (en)
Korean (ko)
Inventor
아츠시 나카무라
즈토무 시모카와
준이치 다카하시
다카요시 아베
도모키 나가이
도모히로 가키자와
Original Assignee
제이에스알 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제이에스알 가부시끼가이샤 filed Critical 제이에스알 가부시끼가이샤
Publication of KR20120032024A publication Critical patent/KR20120032024A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020127003205A 2007-05-23 2008-05-21 감방사선성 수지 조성물 Ceased KR20120032024A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007136669 2007-05-23
JPJP-P-2007-136669 2007-05-23
JP2007246847 2007-09-25
JPJP-P-2007-246847 2007-09-25

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020097025687A Division KR101597366B1 (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물

Publications (1)

Publication Number Publication Date
KR20120032024A true KR20120032024A (ko) 2012-04-04

Family

ID=40031995

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020127003205A Ceased KR20120032024A (ko) 2007-05-23 2008-05-21 감방사선성 수지 조성물
KR1020147015408A Ceased KR20140095541A (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
KR1020097025687A Expired - Fee Related KR101597366B1 (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020147015408A Ceased KR20140095541A (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
KR1020097025687A Expired - Fee Related KR101597366B1 (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물

Country Status (5)

Country Link
US (3) US8211624B2 (enExample)
JP (3) JPWO2008143301A1 (enExample)
KR (3) KR20120032024A (enExample)
TW (2) TW200905399A (enExample)
WO (1) WO2008143301A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5018307B2 (ja) * 2006-09-26 2012-09-05 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
TWI452444B (zh) 2008-07-14 2014-09-11 Jsr Corp 光阻圖型不溶化樹脂組成物及使用其之光阻圖型形成方法
JP5251985B2 (ja) * 2008-09-19 2013-07-31 Ｊｓｒ株式会社 レジストパターンコーティング剤及びレジストパターン形成方法
JP2010271686A (ja) * 2009-04-24 2010-12-02 Jsr Corp 感放射線性樹脂組成物
WO2010147079A1 (ja) 2009-06-16 2010-12-23 Jsr株式会社 感放射線性樹脂組成物
CN101963754B (zh) * 2009-06-26 2012-12-19 罗门哈斯电子材料有限公司 形成电子器件的方法
EP2287667B1 (en) * 2009-06-26 2013-03-27 Rohm and Haas Electronic Materials, L.L.C. Self-aligned spacer multiple patterning methods
TW201125020A (en) * 2009-10-21 2011-07-16 Sumitomo Chemical Co Process for producing photoresist pattern
EP2336824A1 (en) * 2009-11-19 2011-06-22 Rohm and Haas Electronic Materials, L.L.C. Methods of forming electronic devices
WO2011125686A1 (ja) * 2010-03-31 2011-10-13 Jsr株式会社 感放射線性樹脂組成物及び重合体
JP4982582B2 (ja) * 2010-03-31 2012-07-25 株式会社東芝 マスクの製造方法
EP2615630B1 (en) * 2010-09-08 2019-11-20 Mitsubishi Gas Chemical Company, Inc. Use of treatment liquid for inhibiting pattern collapse in microstructures, and microstructure manufacturing method using said treatment liquid
US20130213894A1 (en) * 2012-02-17 2013-08-22 Jsr Corporation Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate
JP5914241B2 (ja) * 2012-08-07 2016-05-11 株式会社ダイセル 高分子化合物の製造方法、高分子化合物、及びフォトレジスト用樹脂組成物
CN102832168A (zh) * 2012-09-11 2012-12-19 上海华力微电子有限公司 一种沟槽优先铜互连制作方法
CN103197513A (zh) * 2013-03-15 2013-07-10 上海华力微电子有限公司 防止光刻胶在湿法刻蚀中产生缺陷的工艺方法
US9360758B2 (en) * 2013-12-06 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device process filter and method
JP6531397B2 (ja) * 2014-03-07 2019-06-19 Jsr株式会社 パターン形成方法及びこれに用いられる組成物
CN104698745B (zh) * 2015-02-11 2019-04-12 广州中国科学院先进技术研究所 一种尺寸可控制的纳米块制作方法
JP2016148777A (ja) * 2015-02-12 2016-08-18 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 下層膜形成用組成物、およびそれを用いた下層膜の形成方法
US11150554B2 (en) * 2015-10-16 2021-10-19 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
TWI696891B (zh) * 2015-12-09 2020-06-21 日商住友化學股份有限公司 光阻組成物及光阻圖案之製造方法
US10691023B2 (en) 2017-08-24 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for performing lithography process with post treatment
JP7257142B2 (ja) * 2018-12-27 2023-04-13 東京応化工業株式会社 化学増幅型感光性組成物、感光性ドライフィルム、パターン化されたレジスト膜の製造方法、鋳型付き基板の製造方法及びめっき造形物の製造方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2919004B2 (ja) 1990-07-12 1999-07-12 沖電気工業株式会社 パターン形成方法
JP3050965B2 (ja) * 1991-09-27 2000-06-12 沖電気工業株式会社 レジストパタンの形成方法
JP2937248B2 (ja) 1992-02-18 1999-08-23 日本電信電話株式会社 ポジ型レジスト材料
JP3317582B2 (ja) 1994-06-01 2002-08-26 菱電セミコンダクタシステムエンジニアリング株式会社 微細パターンの形成方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3950584B2 (ja) * 1999-06-29 2007-08-01 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物
JP4475372B2 (ja) * 2000-03-22 2010-06-09 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
EP1136885B1 (en) * 2000-03-22 2007-05-09 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and patterning method
EP1179750B1 (en) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
US6664022B1 (en) * 2000-08-25 2003-12-16 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
JP4288445B2 (ja) * 2000-10-23 2009-07-01 信越化学工業株式会社 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法
JP2003020335A (ja) * 2001-05-01 2003-01-24 Jsr Corp ポリシロキサンおよび感放射線性樹脂組成物
JP4190168B2 (ja) * 2001-07-06 2008-12-03 富士フイルム株式会社 ポジ型感光性組成物
US7192681B2 (en) * 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP2003156848A (ja) * 2001-11-22 2003-05-30 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP4000469B2 (ja) * 2002-03-22 2007-10-31 信越化学工業株式会社 化学増幅レジスト材料用の光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法
TW200403523A (en) * 2002-03-22 2004-03-01 Shinetsu Chemical Co Photoacid generators, chemically amplified resist compositions, and patterning process
KR100955006B1 (ko) * 2002-04-26 2010-04-27 후지필름 가부시키가이샤 포지티브 레지스트 조성물
US7214467B2 (en) * 2002-06-07 2007-05-08 Fujifilm Corporation Photosensitive resin composition
JP3760952B2 (ja) * 2003-01-22 2006-03-29 Ｊｓｒ株式会社 スルホニウム塩化合物、感放射線性酸発生剤およびポジ型感放射線性樹脂組成物
US7279265B2 (en) * 2003-03-27 2007-10-09 Fujifilm Corporation Positive resist composition and pattern formation method using the same
JP4533639B2 (ja) * 2003-07-22 2010-09-01 富士フイルム株式会社 感刺激性組成物、化合物及び該感刺激性組成物を用いたパターン形成方法
JP4092572B2 (ja) * 2003-08-07 2008-05-28 信越化学工業株式会社 レジスト用重合体、レジスト材料及びパターン形成方法
JP4398783B2 (ja) * 2003-09-03 2010-01-13 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4365236B2 (ja) * 2004-02-20 2009-11-18 富士フイルム株式会社 液浸露光用レジスト組成物及びそれを用いたパターン形成方法
JP2005234451A (ja) * 2004-02-23 2005-09-02 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4485241B2 (ja) * 2004-04-09 2010-06-16 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物およびそれを用いたパターン形成方法
JP4722417B2 (ja) * 2004-06-18 2011-07-13 東京応化工業株式会社 化合物、高分子化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4200936B2 (ja) * 2004-04-28 2008-12-24 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
JP4687651B2 (ja) * 2004-05-26 2011-05-25 Ｊｓｒ株式会社 微細パターン形成用樹脂組成物および微細パターン形成方法
JP4511383B2 (ja) * 2005-02-23 2010-07-28 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI392969B (zh) * 2005-03-22 2013-04-11 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
JP4952012B2 (ja) 2005-03-29 2012-06-13 Ｊｓｒ株式会社 微細パターン形成用樹脂組成物および微細パターン形成方法
JP2007041231A (ja) * 2005-08-02 2007-02-15 Jsr Corp ポジ型感放射線性樹脂組成物
JP4830442B2 (ja) * 2005-10-19 2011-12-07 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
TWI477909B (zh) * 2006-01-24 2015-03-21 Fujifilm Corp 正型感光性組成物及使用它之圖案形成方法
JP5138916B2 (ja) * 2006-09-28 2013-02-06 東京応化工業株式会社 パターン形成方法
KR100876783B1 (ko) * 2007-01-05 2009-01-09 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
WO2008105293A1 (ja) * 2007-02-26 2008-09-04 Jsr Corporation 微細パターン形成用樹脂組成物及び微細パターン形成方法
JPWO2008114644A1 (ja) * 2007-03-16 2010-07-01 Jsr株式会社 レジストパターン形成方法及びそれに用いるレジストパターン不溶化樹脂組成物
JP2008268742A (ja) * 2007-04-24 2008-11-06 Fujifilm Corp パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法
JP4973876B2 (ja) * 2007-08-22 2012-07-11 信越化学工業株式会社 パターン形成方法及びこれに用いるパターン表面コート材
TWI505046B (zh) * 2008-01-24 2015-10-21 Jsr Corp 光阻圖型之形成方法及微細化光阻圖型之樹脂組成物
JP2009271259A (ja) * 2008-05-02 2009-11-19 Fujifilm Corp レジストパターン用表面処理剤および該表面処理剤を用いたレジストパターン形成方法
JP5208573B2 (ja) * 2008-05-06 2013-06-12 サンアプロ株式会社 スルホニウム塩、光酸発生剤、光硬化性組成物及びこの硬化体
JP5071688B2 (ja) * 2009-02-18 2012-11-14 信越化学工業株式会社 パターン形成方法及びレジスト変性用組成物
JP5556765B2 (ja) * 2011-08-05 2014-07-23 信越化学工業株式会社 ＡｒＦ液浸露光用化学増幅ポジ型レジスト材料及びパターン形成方法
JP5678864B2 (ja) * 2011-10-26 2015-03-04 信越化学工業株式会社 ＡｒＦ液浸露光用化学増幅ポジ型レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
US20140363773A1 (en) 2014-12-11
KR20140095541A (ko) 2014-08-01
JPWO2008143301A1 (ja) 2010-08-12
JP2012108529A (ja) 2012-06-07
US8211624B2 (en) 2012-07-03
WO2008143301A1 (ja) 2008-11-27
US20100190104A1 (en) 2010-07-29
KR20100017727A (ko) 2010-02-16
KR101597366B1 (ko) 2016-02-24
JP2015062072A (ja) 2015-04-02
TWI476518B (zh) 2015-03-11
TW200905399A (en) 2009-02-01
US20120156621A1 (en) 2012-06-21
TW201300943A (zh) 2013-01-01

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