KR20100124802A - 구리 인듐 설파이드 나노입자 및 이의 제조 방법 - Google Patents

구리 인듐 설파이드 나노입자 및 이의 제조 방법 Download PDF

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KR20100124802A
KR20100124802A KR1020107022221A KR20107022221A KR20100124802A KR 20100124802 A KR20100124802 A KR 20100124802A KR 1020107022221 A KR1020107022221 A KR 1020107022221A KR 20107022221 A KR20107022221 A KR 20107022221A KR 20100124802 A KR20100124802 A KR 20100124802A
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copper
indium
indium sulfide
copper indium
semiconductor nanoparticles
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English (en)
Korean (ko)
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하이젱 중
용팡 리
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바이엘 테크놀로지 서비시즈 게엠베하
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Publication of KR20100124802A publication Critical patent/KR20100124802A/ko
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C01G15/006—Compounds containing gallium, indium or thallium, with or without oxygen or hydrogen, and containing two or more other elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photovoltaic Devices (AREA)
KR1020107022221A 2008-03-06 2009-03-06 구리 인듐 설파이드 나노입자 및 이의 제조 방법 Withdrawn KR20100124802A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA200810101428XA CN101234779A (zh) 2008-03-06 2008-03-06 铜铟硫半导体纳米粒子的制备方法
CN200810101428.X 2008-03-06

Publications (1)

Publication Number Publication Date
KR20100124802A true KR20100124802A (ko) 2010-11-29

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Country Status (7)

Country Link
US (1) US20110039104A1 (enExample)
EP (1) EP2263977A4 (enExample)
JP (1) JP2011513181A (enExample)
KR (1) KR20100124802A (enExample)
CN (2) CN101234779A (enExample)
IL (1) IL207814A0 (enExample)
WO (1) WO2009109110A1 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN108910939A (zh) * 2018-08-06 2018-11-30 桂林电子科技大学 一种超薄CuInS2纳米片及其制备方法和应用

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CN101234779A (zh) * 2008-03-06 2008-08-06 中国科学院化学研究所 铜铟硫半导体纳米粒子的制备方法
CN101870458B (zh) * 2009-04-22 2012-05-09 钟润文 多元金属硫族元素化合物和靶材及涂层材料的制备方法
CN102126708B (zh) * 2010-01-20 2013-03-27 电子科技大学 一种铜铟镓硒硫纳米粉末材料的制备方法
CN101804971A (zh) * 2010-04-19 2010-08-18 西安交通大学 一种铜铟硒纳米晶材料的制备方法
FR2964044B1 (fr) * 2010-08-26 2012-09-14 Commissariat Energie Atomique Emulsion de metal liquide
CN102041555A (zh) * 2011-01-14 2011-05-04 南开大学 一种CuInS2纳米晶材料的制备方法
WO2012163976A1 (en) 2011-06-03 2012-12-06 Bayer Intellectual Property Gmbh Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification
WO2012168192A2 (en) 2011-06-07 2012-12-13 Bayer Intellectual Property Gmbh Synthesis of highly fluorescing semiconducting core-shell nanoparticles based on ib, iib, iiia, via elements of the periodic classification.
CN102502788B (zh) * 2011-10-13 2014-12-24 中国科学院过程工程研究所 一种铜铟硫三元半导体纳米颗粒的简单可控的制备方法
CN102517003B (zh) * 2011-11-03 2013-12-11 吉林大学 一种新型近红外水溶性铜铟硫三元量子点的水热制备方法
CN102583263A (zh) * 2012-02-14 2012-07-18 北京理工大学 一种水相合成禁带可调的Cu-In-X三元纳米颗粒的方法
US8231848B1 (en) 2012-04-10 2012-07-31 Sun Harmonics Ltd One-pot synthesis of chalcopyrite-based semi-conductor nanoparticles
CN102709381B (zh) * 2012-05-03 2014-11-26 北京工业大学 一种制备cis薄膜的方法
CN103112885A (zh) * 2012-12-12 2013-05-22 南京工业大学 铜基纳米太阳能电池材料的制备方法
CN103137340B (zh) * 2013-01-23 2016-05-11 中国科学院过程工程研究所 高效低成本染料敏化太阳能电池对电极材料一维铜铟硫-硫化锌异质结纳米晶的制备方法
CN105190836B (zh) 2013-03-04 2021-01-22 纳米技术有限公司 用于薄膜太阳能电池的铜-铟-镓-硫属化物纳米粒子前体
CN103310992A (zh) * 2013-05-21 2013-09-18 东莞上海大学纳米技术研究院 一种染料敏化太阳能电池的光阳极及其制备方法
JP6281835B2 (ja) * 2013-09-06 2018-02-21 国立大学法人 宮崎大学 太陽電池用化合物半導体ナノ粒子の作製方法
CN104016590B (zh) * 2014-04-29 2016-06-15 北京理工大学 一种纳米晶掺杂光学玻璃的制备方法
CN104891555B (zh) * 2015-05-22 2016-06-15 温州大学 一种三维中空CuInS2微球的制备方法
CN105369358A (zh) * 2015-11-04 2016-03-02 北京理工大学 一种对半导体纳米晶材料表面进行配体交换的方法
CN106830055B (zh) * 2017-02-24 2018-08-07 武汉理工大学 一种含纤锌矿孪晶结构的铜铟硫纳米晶及其制备方法
KR102799365B1 (ko) 2019-12-02 2025-04-22 신에쓰 가가꾸 고교 가부시끼가이샤 양자 도트, 파장 변환 재료, 백라이트 유닛, 화상 표시 장치 및 양자 도트의 제조 방법
CN112062149A (zh) * 2020-09-16 2020-12-11 泉州师范学院 一种纳米硫化铜的制备方法
CN115197695B (zh) * 2021-04-14 2024-01-19 中国科学院理化技术研究所 一种CuInS2量子点超晶格结构的制备方法
CN114538498B (zh) * 2022-02-23 2022-11-29 西安交通大学 一种硫化铜纳米线的制备方法及应用
CN114933327B (zh) * 2022-06-13 2023-12-01 佛山(华南)新材料研究院 一种制氢材料及其制备方法、应用
CN115340866A (zh) * 2022-08-30 2022-11-15 北华大学 一种CuAlInS量子点及其制备方法
CN116603542A (zh) * 2023-06-30 2023-08-18 合肥工业大学 一种CuInS2-In2S3纳米异质结催化剂及其制备方法和应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191005A (ja) * 1984-10-08 1986-05-09 Ryuichi Yamamoto 金属硫化物溶液とその製造方法
KR100621309B1 (ko) * 2004-04-20 2006-09-14 삼성전자주식회사 황 전구체로서 싸이올 화합물을 이용한 황화 금속나노결정의 제조방법
JP4714859B2 (ja) * 2005-03-01 2011-06-29 国立大学法人 名古屋工業大学 硫化銅ナノ粒子の合成方法
JP2007169605A (ja) * 2005-11-24 2007-07-05 National Institute Of Advanced Industrial & Technology 蛍光体、及びその製造方法
US20080038558A1 (en) * 2006-04-05 2008-02-14 Evident Technologies, Inc. I-iii-vi semiconductor nanocrystals, i-iii-vi water stable semiconductor nanocrystals, and methods of making same
JP4829046B2 (ja) * 2006-08-30 2011-11-30 国立大学法人 名古屋工業大学 硫化金属ナノ粒子の製造方法及び光電変換素子
JP5188070B2 (ja) * 2007-02-07 2013-04-24 Ｊｘ日鉱日石エネルギー株式会社 カルコパイライトナノ粒子の製造方法及び光電変換素子
CN100494068C (zh) * 2007-05-17 2009-06-03 上海交通大学 单分散三元硫化物CuInS2的制备方法
CN101234779A (zh) * 2008-03-06 2008-08-06 中国科学院化学研究所 铜铟硫半导体纳米粒子的制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108910939A (zh) * 2018-08-06 2018-11-30 桂林电子科技大学 一种超薄CuInS2纳米片及其制备方法和应用
CN108910939B (zh) * 2018-08-06 2020-11-10 桂林电子科技大学 一种超薄CuInS2纳米片及其制备方法和应用

Also Published As

Publication number Publication date
IL207814A0 (en) 2010-12-30
EP2263977A4 (en) 2014-01-29
EP2263977A1 (en) 2010-12-22
WO2009109110A1 (zh) 2009-09-11
CN102105400A (zh) 2011-06-22
US20110039104A1 (en) 2011-02-17
CN101234779A (zh) 2008-08-06
JP2011513181A (ja) 2011-04-28

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