CN101234779A - 铜铟硫半导体纳米粒子的制备方法 - Google Patents

铜铟硫半导体纳米粒子的制备方法 Download PDF

Info

Publication number
CN101234779A
CN101234779A CNA200810101428XA CN200810101428A CN101234779A CN 101234779 A CN101234779 A CN 101234779A CN A200810101428X A CNA200810101428X A CN A200810101428XA CN 200810101428 A CN200810101428 A CN 200810101428A CN 101234779 A CN101234779 A CN 101234779A
Authority
CN
China
Prior art keywords
indium
copper
semiconductor nanoparticles
copper indium
nano particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200810101428XA
Other languages
English (en)
Chinese (zh)
Inventor
钟海政
李永舫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bayer Technology and Engineering Shanghai Co Ltd
Original Assignee
Institute of Chemistry CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Chemistry CAS filed Critical Institute of Chemistry CAS
Priority to CNA200810101428XA priority Critical patent/CN101234779A/zh
Publication of CN101234779A publication Critical patent/CN101234779A/zh
Priority to US12/920,665 priority patent/US20110039104A1/en
Priority to CN200980107584XA priority patent/CN102105400A/zh
Priority to KR1020107022221A priority patent/KR20100124802A/ko
Priority to PCT/CN2009/000237 priority patent/WO2009109110A1/zh
Priority to JP2010549003A priority patent/JP2011513181A/ja
Priority to EP09718518.5A priority patent/EP2263977A4/en
Priority to IL207814A priority patent/IL207814A0/en
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C01G15/006—Compounds containing gallium, indium or thallium, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photovoltaic Devices (AREA)
CNA200810101428XA 2008-03-06 2008-03-06 铜铟硫半导体纳米粒子的制备方法 Pending CN101234779A (zh)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CNA200810101428XA CN101234779A (zh) 2008-03-06 2008-03-06 铜铟硫半导体纳米粒子的制备方法
US12/920,665 US20110039104A1 (en) 2008-03-06 2009-03-06 Copper Indium Sulfide Semiconducting Nanoparticles and Process for Preparing the Same
CN200980107584XA CN102105400A (zh) 2008-03-06 2009-03-06 铜铟硫半导体纳米粒子及其制备方法
KR1020107022221A KR20100124802A (ko) 2008-03-06 2009-03-06 구리 인듐 설파이드 나노입자 및 이의 제조 방법
PCT/CN2009/000237 WO2009109110A1 (zh) 2008-03-06 2009-03-06 铜铟硫半导体纳米粒子及其制备方法
JP2010549003A JP2011513181A (ja) 2008-03-06 2009-03-06 銅インジウム硫化物半導体ナノ粒子及びその調製方法
EP09718518.5A EP2263977A4 (en) 2008-03-06 2009-03-06 COPPER AND INDIUM SULFIDE NANOPARTICLES AND PROCESS FOR PREPARING THE SAME
IL207814A IL207814A0 (en) 2008-03-06 2010-08-26 Copper indium sulfide nanoparticles and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA200810101428XA CN101234779A (zh) 2008-03-06 2008-03-06 铜铟硫半导体纳米粒子的制备方法

Publications (1)

Publication Number Publication Date
CN101234779A true CN101234779A (zh) 2008-08-06

Family

ID=39918722

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA200810101428XA Pending CN101234779A (zh) 2008-03-06 2008-03-06 铜铟硫半导体纳米粒子的制备方法
CN200980107584XA Pending CN102105400A (zh) 2008-03-06 2009-03-06 铜铟硫半导体纳米粒子及其制备方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN200980107584XA Pending CN102105400A (zh) 2008-03-06 2009-03-06 铜铟硫半导体纳米粒子及其制备方法

Country Status (7)

Country Link
US (1) US20110039104A1 (enExample)
EP (1) EP2263977A4 (enExample)
JP (1) JP2011513181A (enExample)
KR (1) KR20100124802A (enExample)
CN (2) CN101234779A (enExample)
IL (1) IL207814A0 (enExample)
WO (1) WO2009109110A1 (enExample)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009109110A1 (zh) * 2008-03-06 2009-09-11 拜耳技术工程{上海}有限公司 铜铟硫半导体纳米粒子及其制备方法
CN101804971A (zh) * 2010-04-19 2010-08-18 西安交通大学 一种铜铟硒纳米晶材料的制备方法
CN102041555A (zh) * 2011-01-14 2011-05-04 南开大学 一种CuInS2纳米晶材料的制备方法
CN101870458B (zh) * 2009-04-22 2012-05-09 钟润文 多元金属硫族元素化合物和靶材及涂层材料的制备方法
CN102502788A (zh) * 2011-10-13 2012-06-20 中国科学院过程工程研究所 一种铜铟硫三元半导体纳米颗粒的简单可控的制备方法
CN102517003A (zh) * 2011-11-03 2012-06-27 吉林大学 一种新型近红外水溶性铜铟硫三元量子点的水热制备方法
CN102583263A (zh) * 2012-02-14 2012-07-18 北京理工大学 一种水相合成禁带可调的Cu-In-X三元纳米颗粒的方法
US8231848B1 (en) 2012-04-10 2012-07-31 Sun Harmonics Ltd One-pot synthesis of chalcopyrite-based semi-conductor nanoparticles
CN102709381A (zh) * 2012-05-03 2012-10-03 北京工业大学 一种制备cis薄膜的方法
CN102126708B (zh) * 2010-01-20 2013-03-27 电子科技大学 一种铜铟镓硒硫纳米粉末材料的制备方法
CN103112885A (zh) * 2012-12-12 2013-05-22 南京工业大学 铜基纳米太阳能电池材料的制备方法
CN103137340A (zh) * 2013-01-23 2013-06-05 中国科学院过程工程研究所 高效低成本染料敏化太阳能电池对电极材料一维铜铟硫-硫化锌异质结纳米晶的制备方法
CN103310992A (zh) * 2013-05-21 2013-09-18 东莞上海大学纳米技术研究院 一种染料敏化太阳能电池的光阳极及其制备方法
CN104016590A (zh) * 2014-04-29 2014-09-03 北京理工大学 一种纳米晶掺杂光学玻璃的制备方法
CN104891555A (zh) * 2015-05-22 2015-09-09 温州大学 一种三维中空CuInS2微球的制备方法
CN105369358A (zh) * 2015-11-04 2016-03-02 北京理工大学 一种对半导体纳米晶材料表面进行配体交换的方法
CN106830055A (zh) * 2017-02-24 2017-06-13 武汉理工大学 一种含纤锌矿孪晶结构的铜铟硫纳米晶及其制备方法
CN115197695A (zh) * 2021-04-14 2022-10-18 中国科学院理化技术研究所 一种CuInS2量子点超晶格结构的制备方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2964044B1 (fr) * 2010-08-26 2012-09-14 Commissariat Energie Atomique Emulsion de metal liquide
WO2012163976A1 (en) 2011-06-03 2012-12-06 Bayer Intellectual Property Gmbh Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification
WO2012168192A2 (en) 2011-06-07 2012-12-13 Bayer Intellectual Property Gmbh Synthesis of highly fluorescing semiconducting core-shell nanoparticles based on ib, iib, iiia, via elements of the periodic classification.
CN105190836B (zh) 2013-03-04 2021-01-22 纳米技术有限公司 用于薄膜太阳能电池的铜-铟-镓-硫属化物纳米粒子前体
JP6281835B2 (ja) * 2013-09-06 2018-02-21 国立大学法人 宮崎大学 太陽電池用化合物半導体ナノ粒子の作製方法
CN108910939B (zh) * 2018-08-06 2020-11-10 桂林电子科技大学 一种超薄CuInS2纳米片及其制备方法和应用
KR102799365B1 (ko) 2019-12-02 2025-04-22 신에쓰 가가꾸 고교 가부시끼가이샤 양자 도트, 파장 변환 재료, 백라이트 유닛, 화상 표시 장치 및 양자 도트의 제조 방법
CN112062149A (zh) * 2020-09-16 2020-12-11 泉州师范学院 一种纳米硫化铜的制备方法
CN114538498B (zh) * 2022-02-23 2022-11-29 西安交通大学 一种硫化铜纳米线的制备方法及应用
CN114933327B (zh) * 2022-06-13 2023-12-01 佛山(华南)新材料研究院 一种制氢材料及其制备方法、应用
CN115340866A (zh) * 2022-08-30 2022-11-15 北华大学 一种CuAlInS量子点及其制备方法
CN116603542A (zh) * 2023-06-30 2023-08-18 合肥工业大学 一种CuInS2-In2S3纳米异质结催化剂及其制备方法和应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191005A (ja) * 1984-10-08 1986-05-09 Ryuichi Yamamoto 金属硫化物溶液とその製造方法
KR100621309B1 (ko) * 2004-04-20 2006-09-14 삼성전자주식회사 황 전구체로서 싸이올 화합물을 이용한 황화 금속나노결정의 제조방법
JP4714859B2 (ja) * 2005-03-01 2011-06-29 国立大学法人 名古屋工業大学 硫化銅ナノ粒子の合成方法
JP2007169605A (ja) * 2005-11-24 2007-07-05 National Institute Of Advanced Industrial & Technology 蛍光体、及びその製造方法
US20080038558A1 (en) * 2006-04-05 2008-02-14 Evident Technologies, Inc. I-iii-vi semiconductor nanocrystals, i-iii-vi water stable semiconductor nanocrystals, and methods of making same
JP4829046B2 (ja) * 2006-08-30 2011-11-30 国立大学法人 名古屋工業大学 硫化金属ナノ粒子の製造方法及び光電変換素子
JP5188070B2 (ja) * 2007-02-07 2013-04-24 Ｊｘ日鉱日石エネルギー株式会社 カルコパイライトナノ粒子の製造方法及び光電変換素子
CN100494068C (zh) * 2007-05-17 2009-06-03 上海交通大学 单分散三元硫化物CuInS2的制备方法
CN101234779A (zh) * 2008-03-06 2008-08-06 中国科学院化学研究所 铜铟硫半导体纳米粒子的制备方法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009109110A1 (zh) * 2008-03-06 2009-09-11 拜耳技术工程{上海}有限公司 铜铟硫半导体纳米粒子及其制备方法
CN101870458B (zh) * 2009-04-22 2012-05-09 钟润文 多元金属硫族元素化合物和靶材及涂层材料的制备方法
CN102126708B (zh) * 2010-01-20 2013-03-27 电子科技大学 一种铜铟镓硒硫纳米粉末材料的制备方法
CN101804971A (zh) * 2010-04-19 2010-08-18 西安交通大学 一种铜铟硒纳米晶材料的制备方法
CN102041555A (zh) * 2011-01-14 2011-05-04 南开大学 一种CuInS2纳米晶材料的制备方法
CN102502788A (zh) * 2011-10-13 2012-06-20 中国科学院过程工程研究所 一种铜铟硫三元半导体纳米颗粒的简单可控的制备方法
CN102502788B (zh) * 2011-10-13 2014-12-24 中国科学院过程工程研究所 一种铜铟硫三元半导体纳米颗粒的简单可控的制备方法
CN102517003B (zh) * 2011-11-03 2013-12-11 吉林大学 一种新型近红外水溶性铜铟硫三元量子点的水热制备方法
CN102517003A (zh) * 2011-11-03 2012-06-27 吉林大学 一种新型近红外水溶性铜铟硫三元量子点的水热制备方法
CN102583263A (zh) * 2012-02-14 2012-07-18 北京理工大学 一种水相合成禁带可调的Cu-In-X三元纳米颗粒的方法
US8231848B1 (en) 2012-04-10 2012-07-31 Sun Harmonics Ltd One-pot synthesis of chalcopyrite-based semi-conductor nanoparticles
CN102709381B (zh) * 2012-05-03 2014-11-26 北京工业大学 一种制备cis薄膜的方法
CN102709381A (zh) * 2012-05-03 2012-10-03 北京工业大学 一种制备cis薄膜的方法
CN103112885A (zh) * 2012-12-12 2013-05-22 南京工业大学 铜基纳米太阳能电池材料的制备方法
CN103137340A (zh) * 2013-01-23 2013-06-05 中国科学院过程工程研究所 高效低成本染料敏化太阳能电池对电极材料一维铜铟硫-硫化锌异质结纳米晶的制备方法
CN103310992A (zh) * 2013-05-21 2013-09-18 东莞上海大学纳米技术研究院 一种染料敏化太阳能电池的光阳极及其制备方法
CN104016590A (zh) * 2014-04-29 2014-09-03 北京理工大学 一种纳米晶掺杂光学玻璃的制备方法
CN104891555A (zh) * 2015-05-22 2015-09-09 温州大学 一种三维中空CuInS2微球的制备方法
CN104891555B (zh) * 2015-05-22 2016-06-15 温州大学 一种三维中空CuInS2微球的制备方法
CN105369358A (zh) * 2015-11-04 2016-03-02 北京理工大学 一种对半导体纳米晶材料表面进行配体交换的方法
CN106830055A (zh) * 2017-02-24 2017-06-13 武汉理工大学 一种含纤锌矿孪晶结构的铜铟硫纳米晶及其制备方法
CN115197695A (zh) * 2021-04-14 2022-10-18 中国科学院理化技术研究所 一种CuInS2量子点超晶格结构的制备方法
CN115197695B (zh) * 2021-04-14 2024-01-19 中国科学院理化技术研究所 一种CuInS2量子点超晶格结构的制备方法

Also Published As

Publication number Publication date
IL207814A0 (en) 2010-12-30
EP2263977A4 (en) 2014-01-29
EP2263977A1 (en) 2010-12-22
KR20100124802A (ko) 2010-11-29
WO2009109110A1 (zh) 2009-09-11
CN102105400A (zh) 2011-06-22
US20110039104A1 (en) 2011-02-17
JP2011513181A (ja) 2011-04-28

Similar Documents

Publication Publication Date Title
CN101234779A (zh) 铜铟硫半导体纳米粒子的制备方法
JP5188070B2 (ja) カルコパイライトナノ粒子の製造方法及び光電変換素子
JP6760984B2 (ja) セレン化１３族ナノ粒子
Gardner et al. Rapid synthesis and size control of CuInS2 semi-conductor nanoparticles using microwave irradiation
JP4829046B2 (ja) 硫化金属ナノ粒子の製造方法及び光電変換素子
US9466743B2 (en) Copper-indium-gallium-chalcogenide nanoparticle precursors for thin-film solar cells
CN100494068C (zh) 单分散三元硫化物CuInS2的制备方法
JP6113284B2 (ja) 金属ナノ粒子を含む光吸収層製造用インク組成物及びそれを用いた薄膜の製造方法
CN102502788B (zh) 一种铜铟硫三元半导体纳米颗粒的简单可控的制备方法
WO2012167398A1 (zh) 一种制备核壳纳米粒子及其溶液的方法
KR20140146695A (ko) 에멀젼을 이용한 탄소 양자점 제조 방법
Ayyaswamy et al. Structural, optical and photovoltaic properties of co-doped CdTe QDs for quantum dots sensitized solar cells
CN103184045A (zh) Ii型核壳结构半导体纳米晶的制备方法
Pidluzhna et al. InP/ZnS quantum dots synthesis and photovoltaic application
Yousefi et al. Facile microwave approach for synthesis of copper–indium sulfide nanoparticles and study of their behavior in solar cell
Zhou et al. Controllable synthesis of CdS quantum dots and their photovoltaic application on quantum-dot-sensitized ZnO nanorods
Liu et al. Cubic CsPbI3 nanoarchitectonics with high and stable photoluminescence toward white light-emitting diodes
CN100554163C (zh) 单分散三元硫属化物AgInS2的制备方法
Yan et al. Solvothermal synthesis of CuInS2 powders and CuInS2 thin films for solar cell application
Sabet et al. CuInS2/CuS nanocomposite: synthesis via simple microwave approach and investigation its behavior in solar cell
CN106986370A (zh) 一种立方形铜硫属纳米晶的制备方法
JP6338660B2 (ja) 太陽電池光吸収層製造用凝集相前駆体及びその製造方法
CN115197695B (zh) 一种CuInS2量子点超晶格结构的制备方法
CN101531393B (zh) 一种硫化锌半导体纳米粒子的制备方法
CN114906872A (zh) 一种稳定分散的全无机CsPbBr3钙钛矿纳米棒的制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: BAYER AG TECHNOLOGY ENGINNERING ( SHANGHAI ) CO.,

Free format text: FORMER OWNER: CHEMISTRY INSTITUTE, CHINESE ACADEMY OF SCIENCES

Effective date: 20090508

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20090508

Address after: F3 block, Shanghai chemical industry zone, Cao Jing, Shanghai, China: 201507

Applicant after: Bayer Technology and Engineering (Shanghai) Company Limited

Address before: Postal code 2, North 1 Street, Haidian District, Beijing, Zhongguancun: 100080

Applicant before: Institute of Chemistry, Chinese Academy of Sciences

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20080806