JP2011513181A - 銅インジウム硫化物半導体ナノ粒子及びその調製方法 - Google Patents

銅インジウム硫化物半導体ナノ粒子及びその調製方法 Download PDF

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JP2011513181A
JP2011513181A JP2010549003A JP2010549003A JP2011513181A JP 2011513181 A JP2011513181 A JP 2011513181A JP 2010549003 A JP2010549003 A JP 2010549003A JP 2010549003 A JP2010549003 A JP 2010549003A JP 2011513181 A JP2011513181 A JP 2011513181A
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semiconductor nanoparticles
copper
indium
indium sulfide
copper indium
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JP2011513181A5 (enExample
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海政 鐘
永舫 李
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Bayer AG
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Bayer Technology Services GmbH
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C01G15/006—Compounds containing gallium, indium or thallium, with or without oxygen or hydrogen, and containing two or more other elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photovoltaic Devices (AREA)
JP2010549003A 2008-03-06 2009-03-06 銅インジウム硫化物半導体ナノ粒子及びその調製方法 Pending JP2011513181A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA200810101428XA CN101234779A (zh) 2008-03-06 2008-03-06 铜铟硫半导体纳米粒子的制备方法
PCT/CN2009/000237 WO2009109110A1 (zh) 2008-03-06 2009-03-06 铜铟硫半导体纳米粒子及其制备方法

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JP2011513181A true JP2011513181A (ja) 2011-04-28
JP2011513181A5 JP2011513181A5 (enExample) 2012-04-19

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US (1) US20110039104A1 (enExample)
EP (1) EP2263977A4 (enExample)
JP (1) JP2011513181A (enExample)
KR (1) KR20100124802A (enExample)
CN (2) CN101234779A (enExample)
IL (1) IL207814A0 (enExample)
WO (1) WO2009109110A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013538893A (ja) * 2010-08-26 2013-10-17 コミサリア ア レネルジィ アトミーク エ オ ゼネ ルジイ アルテアナティーフ 液体金属エマルジョン
JP2015053391A (ja) * 2013-09-06 2015-03-19 国立大学法人 宮崎大学 太陽電池用化合物半導体ナノ粒子の作製方法
JP2016521232A (ja) * 2013-03-04 2016-07-21 ナノコ テクノロジーズ リミテッド 薄膜ソーラーセル用の銅−インジウム−ガリウム−カルコゲナイド・ナノ粒子前駆体
KR20220110486A (ko) 2019-12-02 2022-08-08 신에쓰 가가꾸 고교 가부시끼가이샤 양자 도트, 파장 변환 재료, 백라이트 유닛, 화상 표시 장치 및 양자 도트의 제조 방법

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101234779A (zh) * 2008-03-06 2008-08-06 中国科学院化学研究所 铜铟硫半导体纳米粒子的制备方法
CN101870458B (zh) * 2009-04-22 2012-05-09 钟润文 多元金属硫族元素化合物和靶材及涂层材料的制备方法
CN102126708B (zh) * 2010-01-20 2013-03-27 电子科技大学 一种铜铟镓硒硫纳米粉末材料的制备方法
CN101804971A (zh) * 2010-04-19 2010-08-18 西安交通大学 一种铜铟硒纳米晶材料的制备方法
CN102041555A (zh) * 2011-01-14 2011-05-04 南开大学 一种CuInS2纳米晶材料的制备方法
WO2012163976A1 (en) 2011-06-03 2012-12-06 Bayer Intellectual Property Gmbh Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification
WO2012168192A2 (en) 2011-06-07 2012-12-13 Bayer Intellectual Property Gmbh Synthesis of highly fluorescing semiconducting core-shell nanoparticles based on ib, iib, iiia, via elements of the periodic classification.
CN102502788B (zh) * 2011-10-13 2014-12-24 中国科学院过程工程研究所 一种铜铟硫三元半导体纳米颗粒的简单可控的制备方法
CN102517003B (zh) * 2011-11-03 2013-12-11 吉林大学 一种新型近红外水溶性铜铟硫三元量子点的水热制备方法
CN102583263A (zh) * 2012-02-14 2012-07-18 北京理工大学 一种水相合成禁带可调的Cu-In-X三元纳米颗粒的方法
US8231848B1 (en) 2012-04-10 2012-07-31 Sun Harmonics Ltd One-pot synthesis of chalcopyrite-based semi-conductor nanoparticles
CN102709381B (zh) * 2012-05-03 2014-11-26 北京工业大学 一种制备cis薄膜的方法
CN103112885A (zh) * 2012-12-12 2013-05-22 南京工业大学 铜基纳米太阳能电池材料的制备方法
CN103137340B (zh) * 2013-01-23 2016-05-11 中国科学院过程工程研究所 高效低成本染料敏化太阳能电池对电极材料一维铜铟硫-硫化锌异质结纳米晶的制备方法
CN103310992A (zh) * 2013-05-21 2013-09-18 东莞上海大学纳米技术研究院 一种染料敏化太阳能电池的光阳极及其制备方法
CN104016590B (zh) * 2014-04-29 2016-06-15 北京理工大学 一种纳米晶掺杂光学玻璃的制备方法
CN104891555B (zh) * 2015-05-22 2016-06-15 温州大学 一种三维中空CuInS2微球的制备方法
CN105369358A (zh) * 2015-11-04 2016-03-02 北京理工大学 一种对半导体纳米晶材料表面进行配体交换的方法
CN106830055B (zh) * 2017-02-24 2018-08-07 武汉理工大学 一种含纤锌矿孪晶结构的铜铟硫纳米晶及其制备方法
CN108910939B (zh) * 2018-08-06 2020-11-10 桂林电子科技大学 一种超薄CuInS2纳米片及其制备方法和应用
CN112062149A (zh) * 2020-09-16 2020-12-11 泉州师范学院 一种纳米硫化铜的制备方法
CN115197695B (zh) * 2021-04-14 2024-01-19 中国科学院理化技术研究所 一种CuInS2量子点超晶格结构的制备方法
CN114538498B (zh) * 2022-02-23 2022-11-29 西安交通大学 一种硫化铜纳米线的制备方法及应用
CN114933327B (zh) * 2022-06-13 2023-12-01 佛山(华南)新材料研究院 一种制氢材料及其制备方法、应用
CN115340866A (zh) * 2022-08-30 2022-11-15 北华大学 一种CuAlInS量子点及其制备方法
CN116603542A (zh) * 2023-06-30 2023-08-18 合肥工业大学 一种CuInS2-In2S3纳米异质结催化剂及其制备方法和应用

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JPS6191005A (ja) * 1984-10-08 1986-05-09 Ryuichi Yamamoto 金属硫化物溶液とその製造方法
JP2005325016A (ja) * 2004-04-20 2005-11-24 Samsung Electronics Co Ltd 硫黄前駆体としてチオール化合物を用いた硫化金属ナノ結晶の製造方法
JP2006240900A (ja) * 2005-03-01 2006-09-14 Nagoya Institute Of Technology 硫化銅ナノ粒子の合成方法
JP2008056511A (ja) * 2006-08-30 2008-03-13 Nagoya Institute Of Technology 硫化金属ナノ粒子の製造方法及び光電変換素子
JP2008192542A (ja) * 2007-02-07 2008-08-21 Nippon Oil Corp カルコパイライトナノ粒子の製造方法及び光電変換素子

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JP2007169605A (ja) * 2005-11-24 2007-07-05 National Institute Of Advanced Industrial & Technology 蛍光体、及びその製造方法
US20080038558A1 (en) * 2006-04-05 2008-02-14 Evident Technologies, Inc. I-iii-vi semiconductor nanocrystals, i-iii-vi water stable semiconductor nanocrystals, and methods of making same
CN100494068C (zh) * 2007-05-17 2009-06-03 上海交通大学 单分散三元硫化物CuInS2的制备方法
CN101234779A (zh) * 2008-03-06 2008-08-06 中国科学院化学研究所 铜铟硫半导体纳米粒子的制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191005A (ja) * 1984-10-08 1986-05-09 Ryuichi Yamamoto 金属硫化物溶液とその製造方法
JP2005325016A (ja) * 2004-04-20 2005-11-24 Samsung Electronics Co Ltd 硫黄前駆体としてチオール化合物を用いた硫化金属ナノ結晶の製造方法
JP2006240900A (ja) * 2005-03-01 2006-09-14 Nagoya Institute Of Technology 硫化銅ナノ粒子の合成方法
JP2008056511A (ja) * 2006-08-30 2008-03-13 Nagoya Institute Of Technology 硫化金属ナノ粒子の製造方法及び光電変換素子
JP2008192542A (ja) * 2007-02-07 2008-08-21 Nippon Oil Corp カルコパイライトナノ粒子の製造方法及び光電変換素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013538893A (ja) * 2010-08-26 2013-10-17 コミサリア ア レネルジィ アトミーク エ オ ゼネ ルジイ アルテアナティーフ 液体金属エマルジョン
JP2016521232A (ja) * 2013-03-04 2016-07-21 ナノコ テクノロジーズ リミテッド 薄膜ソーラーセル用の銅−インジウム−ガリウム−カルコゲナイド・ナノ粒子前駆体
JP2015053391A (ja) * 2013-09-06 2015-03-19 国立大学法人 宮崎大学 太陽電池用化合物半導体ナノ粒子の作製方法
KR20220110486A (ko) 2019-12-02 2022-08-08 신에쓰 가가꾸 고교 가부시끼가이샤 양자 도트, 파장 변환 재료, 백라이트 유닛, 화상 표시 장치 및 양자 도트의 제조 방법

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Publication number Publication date
IL207814A0 (en) 2010-12-30
EP2263977A4 (en) 2014-01-29
EP2263977A1 (en) 2010-12-22
KR20100124802A (ko) 2010-11-29
WO2009109110A1 (zh) 2009-09-11
CN102105400A (zh) 2011-06-22
US20110039104A1 (en) 2011-02-17
CN101234779A (zh) 2008-08-06

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