CN102105400A - 铜铟硫半导体纳米粒子及其制备方法 - Google Patents

铜铟硫半导体纳米粒子及其制备方法 Download PDF

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CN102105400A
CN102105400A CN200980107584XA CN200980107584A CN102105400A CN 102105400 A CN102105400 A CN 102105400A CN 200980107584X A CN200980107584X A CN 200980107584XA CN 200980107584 A CN200980107584 A CN 200980107584A CN 102105400 A CN102105400 A CN 102105400A
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indium
copper
nano particles
conductor nano
semi
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钟海政
李永舫
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Bayer Pharma AG
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Mcmanescu Sdn Bhd
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C01G15/006—Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明涉及一种铜铟硫半导体纳米粒子及其制备方法。将铜盐、铟盐和烷基硫醇加入到非极性的有机溶剂中，然后在惰性气氛下，加热搅拌、溶解，直至得到深红色的胶体溶液；将得到的胶体溶液冷却到室温，加入极性溶剂，通过离心沉降得到铜铟硫半导体纳米粒子。对得到的铜铟硫半导体纳米粒子可进一步清洗、真空干燥得到铜铟硫半导体纳米粒子粉末。本发明得到的铜铟硫半导体纳米粒子的粒径大小为2～10nm，发射光谱在600～800nm的近红外区，荧光量子效率接近10％；本发明的制备方法的产率高达90％。

Description

铜铟硫半导体纳米粒子及其制备方法
PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN200980107584XA 2008-03-06 2009-03-06 铜铟硫半导体纳米粒子及其制备方法 Pending CN102105400A (zh)

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CNA200810101428XA CN101234779A (zh) 2008-03-06 2008-03-06 铜铟硫半导体纳米粒子的制备方法
CN200810101428.X 2008-03-06
CN200980107584XA CN102105400A (zh) 2008-03-06 2009-03-06 铜铟硫半导体纳米粒子及其制备方法
PCT/CN2009/000237 WO2009109110A1 (zh) 2008-03-06 2009-03-06 铜铟硫半导体纳米粒子及其制备方法

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US (1) US20110039104A1 (zh)
EP (1) EP2263977A4 (zh)
JP (1) JP2011513181A (zh)
KR (1) KR20100124802A (zh)
CN (2) CN101234779A (zh)
IL (1) IL207814A0 (zh)
WO (1) WO2009109110A1 (zh)

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CN101870458B (zh) * 2009-04-22 2012-05-09 钟润文 多元金属硫族元素化合物和靶材及涂层材料的制备方法
CN102126708B (zh) * 2010-01-20 2013-03-27 电子科技大学 一种铜铟镓硒硫纳米粉末材料的制备方法
CN101804971A (zh) * 2010-04-19 2010-08-18 西安交通大学 一种铜铟硒纳米晶材料的制备方法
FR2964044B1 (fr) * 2010-08-26 2012-09-14 Commissariat Energie Atomique Emulsion de metal liquide
CN102041555A (zh) * 2011-01-14 2011-05-04 南开大学 一种CuInS2纳米晶材料的制备方法
WO2012163976A1 (en) 2011-06-03 2012-12-06 Bayer Intellectual Property Gmbh Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification
WO2012168192A2 (en) 2011-06-07 2012-12-13 Bayer Intellectual Property Gmbh Synthesis of highly fluorescing semiconducting core-shell nanoparticles based on ib, iib, iiia, via elements of the periodic classification.
CN102502788B (zh) * 2011-10-13 2014-12-24 中国科学院过程工程研究所 一种铜铟硫三元半导体纳米颗粒的简单可控的制备方法
CN102517003B (zh) * 2011-11-03 2013-12-11 吉林大学 一种新型近红外水溶性铜铟硫三元量子点的水热制备方法
CN102583263A (zh) * 2012-02-14 2012-07-18 北京理工大学 一种水相合成禁带可调的Cu-In-X三元纳米颗粒的方法
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CN103310992A (zh) * 2013-05-21 2013-09-18 东莞上海大学纳米技术研究院 一种染料敏化太阳能电池的光阳极及其制备方法
JP6281835B2 (ja) * 2013-09-06 2018-02-21 国立大学法人 宮崎大学 太陽電池用化合物半導体ナノ粒子の作製方法
CN104016590B (zh) * 2014-04-29 2016-06-15 北京理工大学 一种纳米晶掺杂光学玻璃的制备方法
CN104891555B (zh) * 2015-05-22 2016-06-15 温州大学 一种三维中空CuInS2微球的制备方法
CN105369358A (zh) * 2015-11-04 2016-03-02 北京理工大学 一种对半导体纳米晶材料表面进行配体交换的方法
CN106830055B (zh) * 2017-02-24 2018-08-07 武汉理工大学 一种含纤锌矿孪晶结构的铜铟硫纳米晶及其制备方法
CN108910939B (zh) * 2018-08-06 2020-11-10 桂林电子科技大学 一种超薄CuInS2纳米片及其制备方法和应用
CN114746363A (zh) 2019-12-02 2022-07-12 信越化学工业株式会社 量子点、波长转换材料、背光单元、图像显示装置及量子点的制造方法
CN112062149A (zh) * 2020-09-16 2020-12-11 泉州师范学院 一种纳米硫化铜的制备方法
CN115197695B (zh) * 2021-04-14 2024-01-19 中国科学院理化技术研究所 一种CuInS2量子点超晶格结构的制备方法
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IL207814A0 (en) 2010-12-30
WO2009109110A1 (zh) 2009-09-11
US20110039104A1 (en) 2011-02-17
KR20100124802A (ko) 2010-11-29
EP2263977A4 (en) 2014-01-29
EP2263977A1 (en) 2010-12-22
CN101234779A (zh) 2008-08-06
JP2011513181A (ja) 2011-04-28

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