JP2008056511A - 硫化金属ナノ粒子の製造方法及び光電変換素子 - Google Patents
硫化金属ナノ粒子の製造方法及び光電変換素子 Download PDFInfo
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【解決手段】本発明の硫化金属ナノ粒子の製造方法は、前駆体金属錯体と硫黄を含むチオール化合物溶液とを混合する。
【選択図】図2
Description
S+2RSH→(RSH)2S→H2S+RSSR
2…対向電極基板
3…硫化金属ナノ粒子を含浸した半導体層
4…電解質層
5…シール材
Claims (7)
- 前駆体金属錯体と、硫黄を含むチオール化合物溶液とを混合することを特徴とする硫化金属ナノ粒子の製造方法。
- 請求項1記載の前駆体金属錯体は、金属塩とアミン化合物とから調製される硫化金属ナノ粒子の製造方法。
- 請求項1記載のチオール化合物は、炭素数3〜20のアルキル基、
炭素数6〜14のアリール基、
炭素数7〜20のアラルキル基、
又は窒素、硫黄及び酸素から選ばれる1種以上を含む複素環基
から選ばれる官能基を有する硫化金属ナノ粒子の製造方法。 - 前記硫化金属ナノ粒子は、CdS、ZnS、HgS、PbS、SnSX(Xは1〜2)、GeS、GaS、InS、In2S3、TlSx(Xは1〜2)、TiS2、MnSX(Xは1〜2)、FeSX(Xは1〜2)、Fe2S3、NiS、CuXS(Xは1〜2)、MoS2、PdS、Ag2S、PtS2、AuS、Au2S及びAu2S3より選ばれる1種以上の物質である請求項1乃至3のいずれか1項記載の硫化金属ナノ粒子の製造方法。
- 前記硫化金属ナノ粒子は、球状、コイン状、フィルム状、紐状及び星状から選ばれる1種又はこれらの混合物である請求項1乃至4のいずれか1項記載の硫化金属ナノ粒子の製造方法。
- 請求項1乃至5記載の硫化金属ナノ粒子を用いたことを特徴とする光電変換素子。
- 請求項1乃至5記載の硫化金属ナノ粒子を酸化チタンナノ粒子上に吸着した電極を用いたことを特徴とする光電変換素子。
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