KR20100101640A - 반도체 공정 부품의 처리 방법 및 이에 의해 형성되는 부품 - Google Patents

반도체 공정 부품의 처리 방법 및 이에 의해 형성되는 부품 Download PDF

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Publication number
KR20100101640A
KR20100101640A KR1020107015114A KR20107015114A KR20100101640A KR 20100101640 A KR20100101640 A KR 20100101640A KR 1020107015114 A KR1020107015114 A KR 1020107015114A KR 20107015114 A KR20107015114 A KR 20107015114A KR 20100101640 A KR20100101640 A KR 20100101640A
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South Korea
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impurity level
component
sic
bulk
cvd
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KR1020107015114A
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Korean (ko)
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예쉬완 나렌다
리차드 에프. 버클리
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생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드
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Publication of KR20100101640A publication Critical patent/KR20100101640A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
KR1020107015114A 2007-12-20 2008-12-15 반도체 공정 부품의 처리 방법 및 이에 의해 형성되는 부품 Ceased KR20100101640A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1561207P 2007-12-20 2007-12-20
US61/015,612 2007-12-20

Publications (1)

Publication Number Publication Date
KR20100101640A true KR20100101640A (ko) 2010-09-17

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KR1020107015114A Ceased KR20100101640A (ko) 2007-12-20 2008-12-15 반도체 공정 부품의 처리 방법 및 이에 의해 형성되는 부품

Country Status (6)

Country Link
US (1) US8058174B2 (enExample)
JP (2) JP5480153B2 (enExample)
KR (1) KR20100101640A (enExample)
CN (1) CN101884099B (enExample)
TW (1) TWI421965B (enExample)
WO (1) WO2009085703A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210020355A (ko) * 2019-08-14 2021-02-24 에스케이실트론 주식회사 웨이퍼용 서셉터의 제작 방법

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JP5803934B2 (ja) * 2011-07-20 2015-11-04 住友電気工業株式会社 炭化珪素基板、半導体装置およびこれらの製造方法
USD714369S1 (en) 2011-11-23 2014-09-30 Coorstek, Inc. Wafer paddle
JP5803786B2 (ja) * 2012-04-02 2015-11-04 住友電気工業株式会社 炭化珪素基板、半導体装置およびこれらの製造方法
CN103319180B (zh) * 2013-07-01 2014-06-18 潍坊华美精细技术陶瓷有限公司 反应烧结碳化硅悬臂桨的制作方法
JPWO2016038664A1 (ja) * 2014-09-08 2017-04-27 三菱電機株式会社 半導体アニール装置
EP3159325B1 (en) 2015-10-22 2020-07-08 Rolls-Royce High Temperature Composites Inc Reducing impurities in ceramic matrix composites
JP6128262B2 (ja) * 2016-05-20 2017-05-17 住友電気工業株式会社 炭化珪素基板、半導体装置およびこれらの製造方法
JP7582924B2 (ja) * 2021-09-21 2024-11-13 クアーズテック合同会社 サセプタの製造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210020355A (ko) * 2019-08-14 2021-02-24 에스케이실트론 주식회사 웨이퍼용 서셉터의 제작 방법

Also Published As

Publication number Publication date
TW200943460A (en) 2009-10-16
WO2009085703A3 (en) 2009-10-22
US8058174B2 (en) 2011-11-15
US20090159897A1 (en) 2009-06-25
JP2013118376A (ja) 2013-06-13
WO2009085703A2 (en) 2009-07-09
TWI421965B (zh) 2014-01-01
CN101884099A (zh) 2010-11-10
JP5480153B2 (ja) 2014-04-23
JP2011505701A (ja) 2011-02-24
CN101884099B (zh) 2012-07-25

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